Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Growth of Aluminum Nitride Thin Films by Atomic Layer Deposition and Their Applications: A Review

원자층 증착법을 이용한 AlN 박막의 성장 및 응용 동향

  • Yun, Hee Ju (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Kim, Hogyoung (Department of Visual Optics, Seoul National University of Science and Technology) ;
  • Choi, Byung Joon (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
  • 윤희주 (서울과학기술대학교 신소재공학과) ;
  • 김호경 (서울과학기술대학교 안경광학과) ;
  • 최병준 (서울과학기술대학교 신소재공학과)
  • Received : 2019.08.28
  • Accepted : 2019.09.06
  • Published : 2019.09.27
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Abstract

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

Keywords

References

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