마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제26권3호
  • /
  • Pages.15-22
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  • 2019
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
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차세대 전력반도체 소자 및 패키지 접합 기술

Recent Overview on Power Semiconductor Devices and Package Module Technology

  • 김경호 (서울과학기술대학교 나노IT디자인융합대학원) ;
  • 좌성훈 (서울과학기술대학교 나노IT디자인융합대학원)
  • Kim, Kyoung-Ho (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology) ;
  • Choa, Sung-Hoon (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • 투고 : 2019.08.24
  • 심사 : 2019.09.27
  • 발행 : 2019.09.30
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초록

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

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참고문헌

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