Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication

p-GaN/AlGaN/GaN E-mode FET 제작을 위한 선택적 GaN 식각 공정 개발

  • Jang, Won-Ho (School of Electronic and Electrical Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
  • Received : 2019.12.17
  • Accepted : 2020.01.15
  • Published : 2020.02.29
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Abstract

In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.

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References

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