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Switching Dynamics Analysis by Various Models of Hf0.5Zr0.5O2 Ferroelectric Thin Films

Hf0.5Zr0.5O2 강유전체 박막의 다양한 분극 스위칭 모델에 의한 동역학 분석

  • Ahn, Seung-Eon (Department of Nano-Optical Engineering, Korea Polytechnic University)
  • 안승언 (한국산업기술대학교 나노-광공학과)
  • Received : 2020.01.03
  • Accepted : 2020.02.07
  • Published : 2020.02.27

Abstract

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO2) have led to the expectation that HfO2 could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO2 thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO2-based MFM capacitors by applying various ferroelectric switching characteristics models.

Keywords

References

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