Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of SiO2 Based Asymmetric Multilayer Thin Films for High Performance Flexible Transparent Electrodes

고성능 유연 투명전극용 SiO2 기반 비대칭 다층 박막의 특성

  • Jeong, Ji-Won (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Kong, Heon (Department of Advanced Chemicals and Engineering, Chonnam National University) ;
  • Lee, Hyun-Yong (School of Chemical Engineering, Chonnam National University)
  • 정지원 (전남대학교 신화학소재공학과) ;
  • 공헌 (전남대학교 신화학소재공학과) ;
  • 이현용 (전남대학교 화학공학부)
  • Received : 2019.09.02
  • Accepted : 2019.10.04
  • Published : 2020.01.01
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Abstract

Oxide (SiO2)/Metal(Ag)/Oxide(SiO2, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO2 (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10-3 Ω-1.

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