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3-dimensional Nano Structures for Semiconductor Light Source

반도체 광원 적용을 위한 3차원 나노 구조 개발

  • Kim, Je Won (Department of Information and Communication Engineering, Namseoul University)
  • 김제원 (남서울대학교 정보통신공학과)
  • Received : 2020.01.14
  • Accepted : 2020.02.20
  • Published : 2020.02.28

Abstract

In micro-sized light emitting diodes, which are increasingly attentions as the light sources of displays and semiconductor lighting, increasing the amount of light and improving the luminous efficiency are very important and various development directions and methods have been proposed. In this study, the design of 3-dimensional nano structures through nano frame formation and the application of a nano pattern and a reactive etching method were proposed. And it will also be discussed that nano pillar arrays with nano cavities having improved verticality can be applied to semiconductor light sources through the development of nano frame structures.

반도체 조명과 아울러 디스플레이의 주요한 광원으로서 주목받고 있는 마이크로 크기의 발광다이오드에서 광학적 특성 및 효율의 향상을 위해 다양한 개발 방향과 연구 방법이 제시되어져 왔다. 하지만 이러한 개발 방향과 방법은 2차원 구조를 기반으로 하고 있으며, 이에 따라 연구와 개발이 진행되어왔다. 본 연구에서는 기존의 평면구조와는 구별되는 나노 프레임 구조를 통한 입체적인 나노 구조의 설계와 아울러 미세 패턴과 반응성 에칭 방법이 적용된 반도체 공정 적용을 제시하고자 한다. 또한, 나노 프레임 구조의 구현을 위해 적용된 공정 개발을 통해 수직성이 향상된 나노 캐비티와 이를 통한 나노 기둥의 제시를 통해 나노 구조의 반도체 광원으로의 적용 가능성을 제시하고자 한다.

Keywords

References

  1. B. Shin, S. Chiou, Y. Hsieh, C. Sun, T. Yang, S. Chen & T. Chung. (2015). Study of Temperature Distributions in pc-WLEDs with Different Phosphor Packages. Opt. Express, 23(26), 33861-33869. DOI : 10.1364/OE.23.033861
  2. B. Fan, H. Wu, Y. Xian & G. Wang. (2007). Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light- Emitting Diodes. IEEE Photonics Technol. Lett., 19, 1121-1123. DOI : 10.1109/LPT.2007.901098
  3. W. Chien, C. Sun & I. Moreno. (2007). Precise Optical Model of Multi-Chip White LEDs. Opt. Express, 15(12), 7572-7577. DOI : 10.1364/OE.15.007572
  4. Y. Tian. (2014). Development of Phosphors with High Thermal Stability and Efficiency for Phosphor-Converted LEDs. J. Solid State Light, 1, 11. DOI : 10.1186/s40539-014-0011-8
  5. T. Yang, C. Chen, C. Chen, Y. Chang & C. Sun. (2014). Essential Factor for Determining Optical Output of Phosphor-Converted LEDs. IEEE Photonics J, 6(2), 8200209. DOI : 10.1109/JPHOT.2014.2308630
  6. C. Sun, C. Chen, C, Chen, C. Chiu, Y Peng, Y. Wang, T. Yang, T. Chung & C. Chung. (2012). High Uniformity in Angular Correlated-Color-Temperature Distribution of White LEDs from 2800K to 6500K. Opt. Express, 20(6), 6622-6630. DOI : 10.1364/OE.20.006622
  7. L. Yin, L. Yang, W. Yang, Y. Cuo, K. Ma, S. Li & J. Zhang. (2010). Thermal Design and Analysis of Multi- Chip LED Module with Ceramic Substrate. Solid-State Electronics, 54, 1520-1524. DOI : 10.1016/j.sse.2010.06.028
  8. S. Kim, J. Oh, J. Kang, D. Kim, J. Won, J. W. Kim & H. Cho. (2014). Two-Step Growth of High Quality GaN using V/III Ratio Variation in the Initial Growth Stage. J. Cryst. Growth, 262, 7-13. DOI : 10.1016/j.jcrysgro.2003.10.009
  9. J. W. Kim, C. S. Son. I. H. Choi, Y. K. Park, Y. T. Kim, O. Ambacher & M. Stutzmann. (2000). Structural Properties of AlxGa1-xN Grown on Sapphire by Molecular Beam Epitaxy. J. Cryst. Crowth, 208, 37-41. DOI : 10.1016/S0022-0248(99)00483-2
  10. B. H. Kong, D. C. Kim, H. K. Cho, K. H. Lee, J. W. Kim & B. J. Kim. (2007). Blue and Green Emission using In(Ga)N/GaN Quantum Wells with InN Well Layers Grown by Metalorganic Chemical Vapor Deposition. J. Cryst. Growth, 299, 282-287. DOI : 10.1016/j.jcrysgro.2006.11.211
  11. J. W. Kim & K. H. Lee. (2005). Green and Blue Light Emitting InN/GaN Quantum Wells with Nanosize Structures Grown by Metalorganic Chemical Vapor Deposition. J. Semi. Tech. Sci., 5(2), 127-130.
  12. Z. G. Ju, W. Liu, Z. Zhang, S. W. Tan, Y. Ji, Z. Kyaw, X. L. Zhang, S. P. Lu, Y. P. Zhang, B. B. Zhu, N. Hasanov, X. W. Sun & H. V. Demir. (2014). Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/ AlGaN Quantum Well Structured Electron Blocking Layer. ACS Photonics, 1, 377-381. DOI : 10.1021/ph500001e
  13. J. W. Kim, K. H. Lee & S. Hong. (2007). Structural and Optical Characteristics of InN/GaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition. Thin Solid Films, 515, 4405-4407. DOI : 10.1016/j.tsf.2006.07.180
  14. T. Matsuoka, N. Yoshimoto, T. Sasaki & A. Katsui. (1992). Wide-Gap Semiconductor InGaN and InGaAIN Grown by MOVPE. J. Electron. Mater., 21(2), 157-163. DOI : 10.1007/BF02655831
  15. M. Tchernycheva, V. Neplokh, H. Zhang, P. Lavenus, L. Rigutti, F. Bayle, F. H. Julien, A. Babichev, G. Jacopin, L. Largeau, R. Ciechonski, G. Vescovi & O. Kryliouk. (2015). Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping. Nanoscale, 7, 11692-11701. DOI : 10.1039/c5nr00623f
  16. K. Kim, J. Lee, M. Kim & Y. Min. (2019). Characteristics of Excimer Laser-Annealed Polycrystalline Silicon on Polymer layers. J. of Convergence for Information Technology, 9, 75-81. DOI : 10.22156/CS4SMB.2019.9.3.075