Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of MHEMT Devices Having T-Shaped Gate Structure for W-Band MMIC

W-Band MMIC를 위한 T-형태 게이트 구조를 갖는 MHMET 소자 특성

  • Lee, Jong-Min (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Min, Byoung-Gue (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Chang, Sung-Jae (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Chang, Woo-Jin (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Yoon, Hyung Sup (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Jung, Hyun-Wook (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Kim, Seong-Il (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Kang, Dong Min (RF/Power Components Research Group, Electronics and Telecommunications research Institute) ;
  • Kim, Wansik (LIG Nex1 Co., Ltd) ;
  • Jung, Jooyong (LIG Nex1 Co., Ltd) ;
  • Kim, Jongpil (LIG Nex1 Co., Ltd) ;
  • Seo, Mihui (Agency for Defense Development) ;
  • Kim, Sosu (Agency for Defense Development)
  • 이종민 (한국전자통신연구원 RF/전력부품연구실) ;
  • 민병규 (한국전자통신연구원 RF/전력부품연구실) ;
  • 장성재 (한국전자통신연구원 RF/전력부품연구실) ;
  • 장우진 (한국전자통신연구원 RF/전력부품연구실) ;
  • 윤형섭 (한국전자통신연구원 RF/전력부품연구실) ;
  • 정현욱 (한국전자통신연구원 RF/전력부품연구실) ;
  • 김성일 (한국전자통신연구원 RF/전력부품연구실) ;
  • 강동민 (한국전자통신연구원 RF/전력부품연구실) ;
  • 김완식 (LIG 넥스원(주)) ;
  • 정주용 (LIG 넥스원(주)) ;
  • 김종필 (LIG 넥스원(주)) ;
  • 서미희 (국방과학연구소) ;
  • 김소수 (국방과학연구소)
  • Received : 2019.11.11
  • Accepted : 2019.12.18
  • Published : 2020.03.01
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Abstract

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

Keywords

References

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