Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of 1,200 V Reverse Conducting-IGBT

1,200 V Reverse Conducting IGBT의 전기적 특성 분석

  • Kim, Se Young (Department of Energy IT Engineering, Far East University) ;
  • Ahn, Byoungsub (Department of Energy IT Engineering, Far East University) ;
  • Kang, Ey Goo (Department of Energy IT Engineering, Far East University)
  • 김세영 (극동대학교 에너지IT공학과) ;
  • 안병섭 (극동대학교 에너지IT공학과) ;
  • 강이구 (극동대학교 에너지IT공학과)
  • Received : 2020.02.12
  • Accepted : 2020.03.10
  • Published : 2020.05.01
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Abstract

This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, Vth, Vce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

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References

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