Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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The Fabrication of the Cu(In,Ga)Se2 Absorber Layer Using Binary Precursor Films Deposited by Chemical Vapor Deposition

화학기상증착된 이원계 화합물 프리커서를 이용한 Cu(In,Ga)Se2 흡수층의 제조

  • Lee, Gyeong A (Department of Chemical engineering, Yeungnam University) ;
  • Kim, A Hyun (Department of Chemical engineering, Yeungnam University) ;
  • Cho, Sung Wook (Department of Chemical engineering, Yeungnam University) ;
  • Lee, Kang-Yong (Department of Chemical engineering, Yeungnam University) ;
  • Jeon, Chan-Wook (Department of Chemical engineering, Yeungnam University)
  • 이경아 (화학공학과, 영남대학교) ;
  • 김아현 (화학공학과, 영남대학교) ;
  • 조성욱 (화학공학과, 영남대학교) ;
  • 이강용 (화학공학과, 영남대학교) ;
  • 전찬욱 (화학공학과, 영남대학교)
  • Received : 2021.11.03
  • Accepted : 2021.12.12
  • Published : 2021.12.31
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Abstract

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se2 (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe2 and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of JSC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of VOC, JSC, and FF could be greatly improved.

Keywords

References

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