The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
권호 표지
DOI QR코드

DOI QR Code

Structure and Optical Properties of ZnS:Nd Thin filmsss Produced by RF Sputtering and Rapid Thermal Annealing Process

RF 스퍼터링 및 급속열처리 공정으로 제작한 ZnS:Nd 박막의 구조 및 광학적 특성

  • Received : 2021.01.23
  • Accepted : 2021.04.17
  • Published : 2021.04.30
Download PDF
⟨ Previous Next ⟩

Abstract

For the production of neodymium-doped zinc sulfide thin films in various amounts, zinc sulfide and neodymium were simultaneously deposited using an RF magnetron sputtering equipment to form a thin films, and rapid thermal annealing was performed at 400℃ for 30 minutes as a post-treatment process. The structure, shape, and optical properties of ZnS thin films having various neodymium doping contents (0.35at.%, 1.31at.%, 1.82at.% and 1.90at.%) were studied. The X-ray diffraction pattern was grown to a (111) cubic structure in all thin films. The surface and structural morphology of the thin films due to the neodymium doping content was explained through SEM and AFM images. Only elements of Zn, S, and Nd that do not contain other impurities were identified through EDAX. The transmittance and band gap of the prepared thin films were confirmed using the UV-vis spectrum.

다양한 함량으로 네오디뮴이 도핑된 황화아연 박막제작은 RF 마그네트론 스퍼터링 장비를 이용하여 황화아연과 네오디뮴을 동시 증착하여 박막을 제작하였고, 후처리 공정으로 급속열처리를 400℃ 에서 30분간 실시하였다. 다양한 네오디뮴의 도핑 함량(0.35at.%, 1.31at.%, 1.82at.% 및 1.90at.%)을 갖는 ZnS 박막의 구조, 형태, 광학적 특성을 연구하였다. X-선 회절 패턴은 모든 박막에서 (111)방향의 큐빅 구조로 성장하였다. SEM 이미지와 AFM 이미지를 통해 네오디뮴 도핑 함량에 의한 박막의 표면 및 구조적 형태에 대하여 설명하였다. EDAX를 통해 다른 불순물이 포함되지 않은 Zn, S 및 Nd의 원소만을 확인하였다. UV-vis 스펙트럼을 이용하여 제작된 박막의 투과율과 밴드갭을 확인하였다.

Keywords

References

  1. N. Kim, P. Ko, G. Cho, and C. Park, "Rapid Laser Annealing of Cu(In,Ga)Se2 Thin Films by Using a Continuous Wave Nd:YAG Laser (λo = 532 nm)" Journal of the Korean Physical Society, vol. 70, no. 8, Apr. 2017, pp. 809-815 https://doi.org/10.3938/jkps.70.809
  2. C. Park and Y. Jun, "Structural and Optical Properties of ZnS Thin Films Fabricated by Using RF Sputtering and Rapid Thermal Annealing Process for Buffer Layer in Thin Film Solar Cells," J. of the Korea Institute of Electronic Communication Science. vol. 15, no. 4, Aug. 2020, pp. 665-670. https://doi.org/10.13067/JKIECS.2020.15.4.665
  3. D. Hwang, J. An, and Y. Son, "The Influence of Substrate Temperature on the Structural and Optical Properties of ZnS Thin Films." J. Korean Inst. Electr. Electron. Mater. Eng., vol. 24, no. 9, Sept. 2011, pp. 760-765. https://doi.org/10.4313/JKEM.2011.24.9.760
  4. R. Zhang, B. Wang, and L. Wei, "Influence of RF power on the structure of ZnS thin filmsss grown by sulfurizing F-RF sputter deposited ZnO," Matreials Chemistry and Physics, vol. 112, issue 2, 2008, pp. 557-561. https://doi.org/10.1016/j.matchemphys.2008.05.089
  5. A. M. Monirul Islam, S. Ishizuka, A. Yamada, K. Sakurai, S. Niki, T. Sakurai, and K. Akimoto, "CIGS solar cell with MBE-grown ZnS buffer layer," Solar energy materials and solar cells, vol. 93, issue 6-7, June 2009, pp. 970-972. https://doi.org/10.1016/j.solmat.2008.11.047
  6. R. Shakoury, A. Arman, S. Talu, K. Ghosh, S. Rezaee, C. Luna, F. Mwema, K. Sherafat, M. Salehi, and M. M. Kumar, "Optical properties, microstructure, and multifractal analyses of ZnS thin filmsss obtained by RF magnetron sputtering," J. of materials Science:Materials in Electronice, vol. 31, Feb. 2020, pp. 5262-5273. https://doi.org/10.1007/s10854-020-03086-3
  7. N. Shanmugam, S. Cholan, N. Kannadasan, K. Sathishkumar, and G. Viruthagiri, "Effect of Annealing on the ZnS Nanocrystals Prepared by Chemical Precipitation Method," J. of Nanomaterials, vol. 2013, 2013, pp. 351798.
  8. Y. Chung, Y. Joung, and S. Kang, "Effect of RTA Temperature on the Structural and Optical Properties of HfO2 Thin filmsss," J. of the Korea Institute of Electronic Communication Science, vol. 14, no. 3, 2019, pp. 497-504. https://doi.org/10.13067/JKIECS.2019.14.3.497
  9. J. Jung and S. Cho. "Structural, Electrical, and optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature," J. of the Korean Institute of Electrical and Elevtronic Material Engineers, vol. 3, no. 4, Apr. 2010. pp. 280. https://doi.org/10.4313/JKEM.2010.23.4.280
  10. X. Chen, W. Guan, G. Fang, and X. Z. Zhao, "Influeence of substrate temperature and post-treatment on the properties of ZnO:Al thin films prepared by pulsed laser deposition," Applied Surface Science, vol. 252, issue 5, Dec. 2005, pp. 1561-1567. https://doi.org/10.1016/j.apsusc.2005.02.137