Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Photocatalytic Properties of Hydrothermally Synthesized Gallium Oxides at Different Phase Polymorphs

수열합성 공정으로 합성된 산화갈륨의 상변화에 따른 광촉매 특성

  • Ryou, Heejoong (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Kim, Sunjae (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Lee, In Gyu (Department of Materials Science and Engineering, Korea Aerospace University) ;
  • Oh, Hoon-Jung (BIT Micro Fab Research Center, Yonsei University) ;
  • Hwang, Wan Sik (Department of Materials Science and Engineering, Korea Aerospace University)
  • 류희중 (한국항공대학교 신소재공학과) ;
  • 김선재 (한국항공대학교 신소재공학과) ;
  • 이인규 (한국항공대학교 신소재공학과) ;
  • 오훈정 (연세대학교 비아이티마이크로팹연구소) ;
  • 황완식 (한국항공대학교 신소재공학과)
  • Received : 2021.06.08
  • Accepted : 2021.06.22
  • Published : 2021.06.30
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Abstract

GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga2O3 at 500℃ annealing. As the annealing temperatures increase the α-Ga2O3 is in part turned into β-Ga2O3 and fully turned into β-Ga2O3 after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga2O3 and β-Ga2O3 become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.

Keywords

Acknowledgement

이 연구는 한국연구재단의 기초연구사업(과제번호 NRF- 2017R1A 2B2004986)의 지원을 받아 출간되었다.

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