Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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600 V p-type gate-doped enhancement mode gallium nitride-based transistors for AC-to-DC power factor-corrected rectifiers operating at 200 kHz

  • Jang, Jinhaeng (Power Modular Team, Home Entertainment Company, LG Electronics)
  • Received : 2022.01.11
  • Accepted : 2022.05.07
  • Published : 2022.07.20
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Abstract

Various types of power factor-corrected (PFC) rectifiers have been proposed to improve the efficiency and increase the power density of a power supply. With the development of power semiconductor devices, various design attempts have been made to further increase the operating frequency. In this work, 600 V p-type gate-doped enhancement mode gallium nitride (GaN)-based transistors were used for the two-phase interleaved and bridgeless dual-boost PFC rectifiers. These two circuits were designed to operate in a continuous conduction mode at a switching frequency as high as 200 kHz. The physical property of the GaN-based transistor was studied, and the reliable drive circuits were investigated. And then, the deliberate PCB layout design and the effective thermal design were proposed for the 500 W prototype board with two-stage boost circuits. A multi-layered ceramic PCB substrate was used to facilitate the design methods. The areas of the current loops and the total thermal resistance were effectively minimized. While the interleaved method operates with frequent switching cycles, the bridgeless dual-boost method operates with a higher ripple current. The superior properties of the GaN-based transistor were exploited, depending on the distinctive operations of each circuit. The overall performance of both PFC rectifiers was verified in a comparative manner.

Keywords

References

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