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High-Performance Schottky Junction for Self-Powered, Ultrafast, Broadband Alternating Current Photodetector

  • Lim, Jaeseong (Department of Energy Systems Research, Ajou University) ;
  • Kumar, Mohit (Department of Materials Science and Engineering, Ajou University) ;
  • Seo, Hyungtak (Department of Energy Systems Research, Ajou University)
  • 투고 : 2022.07.30
  • 심사 : 2022.08.19
  • 발행 : 2022.08.27

초록

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 ㎲ and a falling time of 382 ㎲, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 1012 Jones at a λ = 940 nm with an intensity of 0.2 mW cm-2 under zero bias operating voltage, which reflects a boost of 50 %, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

키워드

과제정보

This study was supported through the National Research Foundation of Korea [NRF-2018R1D1A1B07049871, NRF-2019R1A2C2003804 and NRF-2022M3I7A3037878] of the Ministry of Science and ICT, Republic of Korea.

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