한국재료학회지 (Korean Journal of Materials Research)

  • 제33권12호
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  • Pages.511-516
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  • 2023
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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Large Size and High Resolution Organic Light Emitting Diodes Based on the In-Ga-Zn-O Thin Film Transistors with a Coplanar Structure

  • 투고 : 2023.11.23
  • 심사 : 2023.12.04
  • 발행 : 2023.12.27
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초록

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

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참고문헌

  1. X. Luan, J. Liu, Q. Pei, G. C. Bazan and H. Li, ACS Appl. Mater. Interfaces, 9, 16750 (2017).
  2. Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas and C. J. Hawker, ACS Cent. Sci., 3, 654 (2017).
  3. H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim and Y.-J. Kim, Sci. Rep., 7, 43063 (2017).
  4. J. Smith, A. Shah, Y. K. Lee, B. O'Brien, D. Kullman, A. Sridharan, J. Muthuswamy and J. B. Christen, Electron. Lett., 52, 900 (2016).
  5. T. Kamiya, K. Nomura and H. Hosono, Sci. Technol. Adv. Mater., 11, 044305 (2010).
  6. K. Myny, Nat. Electron., 1, 30 (2018).
  7. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, Jpn. J. Appl. Phys., 45, 4303 (2006).
  8. C. Liu, Y. Xu, Y. Li, W. Scheideler and T. Minari, J. Phys. Chem. C, 117, 12337 (2013).
  9. C. Wang, Z. Hu, X. He, C. Liao and S. Zhang, IEEE Trans. Electron Devices, 63, 3800 (2016).
  10. W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim and J. Lee, IEEE Electron Device Lett., 38, 760 (2017).
  11. J. Park, W. Maeng, H. Kim and J. Park, Thin Solid Films, 520, 1679 (2012).
  12. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano and H. Hosono, Nature, 432, 488 (2004).
  13. J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo and H.-D. Kim, Appl. Phys. Lett., 91, 113505 (2007).
  14. Y. H. Kim, J. S. Heo, T. H. Kim, S. Park, M. H. Yoon, J. Kim, M. S. Oh, G. R. Yi, Y. Y. Noh and S. K. Park, Nature, 489, 128 (2012).
  15. J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee and J. Jang, IEEE Electron Device Lett., 62, 2212 (2015).
  16. N. Tiwari, R. Chauhan, H. Shieh, P. Liu and Y. Huang, IEEE Trans. Electron Devices, 63, 1578 (2016).
  17. M. Mativenga, D. Geng, B. Kim and J. Jang, ACS Appl. Mater. Interfaces, 7, 1578 (2015).
  18. Y. Chen, D. Geng, M. Mativenga, H. Nam and J. Jang, IEEE Electron Device Lett., 36, 153 (2015).
  19. X. Xu, Q. Cui, Y. Jin and X. Guo, Appl. Phys. Lett., 101, 222114 (2012).
  20. J. Lee, I. Cho, J. Lee and H. Kwon, Appl. Phys. Lett., 93, 093504 (2008).
  21. Y.-C. Han, M.-S. Lim, J.-H. Park and K.-C. Choi, Org. Electron., 14, 3437 (2013).
  22. K. Nomura, T. Kamiya, H. Ohta, M. Hirano and H. Hosono, Appl. Phys. Lett., 93, 192107 (2008).
  23. N. Morosawa, Y. Ohshima, M. Morooka, T. Arai and T. Sasaoka, J. Soc. Inf. Disp., 20, 47 (2012).
  24. A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen and Y. Wang, Nanoscale Res. Lett., 10, 75 (2015).
  25. S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon and M. K. Han, Jpn. J. Appl. Phys., 50, 024104 (2011).
  26. M. Mativenga, S. Hong and J. Jang, Appl. Phys. Lett., 102, 023503 (2013).
  27. S. Lee, D. Jeong, M. Mativenga and J. Jang, Adv. Funct. Mater., 27, 1700437 (2017).
  28. D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner and H. von Seggern, ACS Appl. Mater. Interfaces, 4, 6835 (2012).
  29. J. C. Jeong, I. H. Song, S. I. Kim, S. W. Kim, C. J. Kim, J. C. Lee, H. G. Lee, E. H. Lee, H. Yim, K. L. Kim, K. W. Kwon and Y. S. Park, Appl. Phys. Lett., 93, 053501 (2008).
  30. S. Lee, J. Shin and J. Jang, Adv. Funct. Mater., 27, 1604921 (2017).