Nuclear Engineering and Technology

Korean Nuclear Society (한국원자력학회)
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A novel radiation-dependence model of InP HBTs including gamma radiation effects

  • Jincan Zhang (Electrical Engineering College, Henan University of Science and Technology) ;
  • Haiyi Cai (Electrical Engineering College, Henan University of Science and Technology) ;
  • Na Li (Electrical Engineering College, Henan University of Science and Technology) ;
  • Liwen Zhang (Electrical Engineering College, Henan University of Science and Technology) ;
  • Min Liu (Electrical Engineering College, Henan University of Science and Technology) ;
  • Shi Yang (Novaco Microelectronics Technologies Ltd.)
  • Received : 2021.08.30
  • Accepted : 2023.07.31
  • Published : 2023.11.25
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Abstract

In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.

Keywords

Acknowledgement

This work was supported by the National Natural Science Foundation of China (Grant No: 61804046), the Foundation of Department of Science and Technology of Henan Province (Grant No. 222102210172, 222102210207, 212102210286), and the Foundation of He'nan Educational Committee (Grant No. 20B510006).

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