한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제36권2호
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  • Pages.170-174
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  • 2023
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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4H-SiC 기판 위에 RF Sputter로 증착된 NiO 박막의 후열처리 효과

Post-annealing Effect of NiO Thin Film Grown by RF Sputtering System on 4H-SiC Substrate

  • 문수영 (광운대학교 전자재료공학과) ;
  • 김민영 (광운대학교 전자재료공학과) ;
  • 변동욱 (광운대학교 전자재료공학과) ;
  • 이건희 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Soo-Young Moon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Min-Yeong Kim (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Dong-Wook Byun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Geon-Hee Lee (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Sang-Mo Koo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2022.12.13
  • 심사 : 2022.12.30
  • 발행 : 2023.03.01
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초록

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

키워드

과제정보

This work was supported by the Technology Innovation Program Development of 1.2 kV low-loss Gallium Oxide transistor (RS-2022-00144027) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea), the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No.2021R1F1A1057620), and the present research has been conducted by the Excellent researcher support project of Kwangwoon University in 2022.

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