Nuclear Engineering and Technology

  • 제55권1호
  • /
  • Pages.209-214
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  • 2023
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  • 1738-5733(pISSN)
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  • 2234-358X(eISSN)
한국원자력학회 (Korean Nuclear Society)
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Thermal-annealing behavior of in-core neutron-irradiated epitaxial 4H-SiC

  • 투고 : 2022.08.08
  • 심사 : 2022.09.09
  • 발행 : 2023.01.25
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초록

The effect of thermal annealing on defect recovery of in-core neutron-irradiated 4H-SiC was investigated. Au/SiC Schottky diodes were manufactured using a 4H-SiC epitaxial wafer that was neutron-irradiated at the HANARO research reactor. The electrical characteristics of their epitaxial layers were analyzed under various conditions, including different neutron fluences (1.3 × 1017 and 2.7 × 1017 neutrons/cm2) and annealing times (up to 2 h at 1700 ℃). Capacity-voltage measurements showed high carrier compensation in the neutron-irradiated samples and a recovery tendency that increased with annealing time. The carrier density could be recovered up to 77% of the bare sample. Deep-level-transient spectroscopy revealed intrinsic defects of 4H-SiC with energy levels 0.47 and 0.68 eV below the conduction-band edge, which were significantly increased by in-core neutron irradiation. A previously unknown defect with a high electron-capture cross-section was discovered at 0.36 eV below the conduction-band edge. All defect concentrations decreased with 1700 ℃ annealing; the decrease was faster when the defect level was shallow.

키워드

과제정보

This work was supported by the National Research Council of Science & Technology (NST) grant by the Korea government (MSIT) (No. CAP22011-200) and research fund of Hanyang University (HY-2019).

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