Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Light Emitting Diode with Multi-step Quantum Well Structure for Sensing Applications

계단형 양자우물 구조가 적용된 센서 광원 용 발광다이오드 소자

  • Seongmin Park (School of Chemical Engineering, Dankook National University) ;
  • Seungjoo Lee (School of Chemical Engineering, Dankook National University) ;
  • Jajeong Woo (School of Chemical Engineering, Dankook National University) ;
  • Yukyung Kim (School of Chemical Engineering, Dankook National University) ;
  • Soohwan Jang (School of Chemical Engineering, Dankook National University)
  • 박성민 (단국대학교 화학공학과) ;
  • 이승주 (단국대학교 화학공학과) ;
  • 우자정 (단국대학교 화학공학과) ;
  • 김유경 (단국대학교 화학공학과) ;
  • 장수환 (단국대학교 화학공학과)
  • Received : 2023.10.30
  • Accepted : 2023.11.10
  • Published : 2023.11.30
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Abstract

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN and Al0.1GaN/GaN/In0.2GaN/GaN/Al0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 1028 cm-3·s-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

Keywords

Acknowledgement

이 성과는 정부(과학기술정보통신부)의 재원으로 한국연구재단의지원을받아수행된연구이며(No. 2021R1F1A1056647),2022년도 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원을 받아 수행된 연구임 (P0020966, 2022년 산업혁신인재성장지원사업).

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