Electronics and Telecommunications Trends (전자통신동향분석)

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Technical Trends in Vertical GaN Power Devices for Electric Vehicle Application

전기차 응용을 위한 수직형 GaN 전력반도체 기술 동향

  • H.S. Lee ;
  • S.B. Bae
  • 이형석 (GaN박막소재/소자창의연구실) ;
  • 배성범 (GaN박막소재/소자창의연구실)
  • Published : 2023.02.01
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Abstract

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

Keywords

Acknowledgement

본 논문은 산업통상자원부의 재원으로 산업기술평가관리원(KEIT)[과제번호: RS-2022-00143570, 2kV급 수직형 GaN 전력소자용 에피 및 소자 핵심원천 기술개발] 지원을 받아 수행된 연구임.

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