Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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High-breakdown-voltage GaN-based vertical FinFET design

  • Zilong Wang (Tianjin Key Laboratory of Intelligent Control of Electrical Equipment, Tiangong University) ;
  • Liang Liu (Tianjin Key Laboratory of Intelligent Control of Electrical Equipment, Tiangong University) ;
  • Peiyue Qi (Tianjin Key Laboratory of Intelligent Control of Electrical Equipment, Tiangong University) ;
  • Jiawei Chen (Tianjin Key Laboratory of Intelligent Control of Electrical Equipment, Tiangong University) ;
  • Lixia Zhao (Tianjin Key Laboratory of Intelligent Control of Electrical Equipment, Tiangong University)
  • Received : 2023.04.14
  • Accepted : 2023.11.15
  • Published : 2024.03.20
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Abstract

In this study, GaN-based vertical FinFET device using HfO2 as a high-κ dielectric gate layer to improve the breakdown voltage is designed. Simulation results show that a breakdown voltage as high as 2139 V can be achieved for the optimized GaN-based FinFET with a fin channel width of 200 nm, a channel doping concentration of 1 × 1016 cm-3, and a drift layer thickness of 10 ㎛. In addition, the proposed device has a low specific on-state resistance of 0.84 mΩ cm2, resulting in a large Baliga optimum figure of merit (FOM) 5.45 GW cm-2. This work could lay a foundation to further improve the electrical performance of GaN-based vertical FinFET devices.

Keywords

Acknowledgement

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11974343 and 12374395).

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