Applied Chemistry for Engineering (공업화학)

The Korean Society of Industrial and Engineering Chemistry (한국공업화학회)
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Fabrication of High-performance Organic Internal Gated Transistor Using Screen Printing Technique

스크린 프린팅을 이용한 고성능 유기 내부 게이트 트랜지스터 제작

  • Gyu Won Woo (Department of Chemical Engineering, Pukyong National University) ;
  • Eun Kwang Lee (Department of Chemical Engineering, Pukyong National University)
  • 우규원 (국립부경대학교 화학공학과) ;
  • 이은광 (국립부경대학교 화학공학과)
  • Received : 2024.11.05
  • Accepted : 2024.12.27
  • Published : 2025.02.10
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Abstract

The device fabricated in this study was an internal ion-gated organic electrochemical transistors (IGTs) using screen printing technology on a flexible polyimide (PI) film substrate. This fabrication method is a cost-effective and simple method without existing deposition techniques or complicated processes. The conductive polymer, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS), commonly used as a channel material in organic electrochemical transistors (OECTs), was blended with D-sorbitol to enable a self-ion (de)doping mechanism within the channel, eliminating the requirement for an external electrolyte. The screen-printed IGT exhibited enhanced conductivity and performance compared to conventional OECTs. Analysis of the physical and chemical properties of PEDOT:PSS with D-sorbitol revealed a significant reduction in sheet resistance. The surface analysis further confirmed an enhancement in crystallinity. Electrical performance evaluation involved a comparative study with conventional OECTs. The IGT device demonstrated a 4 times increase in output curve characteristics at VGS = 1.6 V compared to OECTs. Additionally, the ION/IOFF ratio was 4.3 times higher for the IGT. Calculations of µC* to assess device mobility indicated a notable improvement, with values of 0.9578 F V-1 s-1 cm-1 for IGT compared to 0.6987 F V-1 s-1 cm-1 for OECTs. In time constant analysis, τOECT = 0.50 s and τIGT = 0.34 s indicate that IGTs have a faster response time.

본 연구에서는 스크린 인쇄 기술을 활용하여 유연 기판인 polyimide (PI) 필름에 내부 이온 게이트 유기 전기 화학 트랜지스터(internal gated transistor, IGT)를 제작하였다. 기존의 복잡한 공정 없이 저비용으로 제작하였으며, 유기 전기 화학 트랜지스터(OECT)의 채널로 주로 사용되는 전도성 고분자인 poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS)와 D-소르비톨을 혼합하여 외부 전해질 없이 채널 내에서 자체적으로 이온 (de)doping 메커니즘을 구현하였다. 그 결과, 스크린 인쇄 IGT는 기존 OECT 대비 향상된 전도성과 성능 지표를 나타냈다. D-소르비톨 첨가 후 PEDOT:PSS의 시트 저항 값이 기존 대비 약 1/2로 감소하여 전도성이 향상되었고, 표면 결정성 또한 개선되었다. 전기적 성능 평가에서 IGT는 OECT 대비 출력 곡선 특성(VGS = 1.6 V)에서 약 4배 증가한 것으로 나타났으며, ION/IOFF 비율은 약 4.3배 높았다. 이동도 계산 결과 OECT는 0.6987 F V-1 s-1 cm-1, IGT는 0.9578 F V-1 s-1 cm-1로 IGT가 높은 값을 보였고, 시간 응답 속도 상수 τ는 τOECT = 0.50 s, τIGT = 0.34 s로 더 빠른 응답 속도를 나타내었다.

Keywords

Acknowledgement

이 논문(또는 저서)은 국립부경대학교 자율창의학술연구비(2024년)에 의하여 연구되었음. (과제번호: 202404730001)

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