Si nanocrstallites on p-tyre (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355, 532 and 1064 nm. The base vacuum in the chamber was down to $10^{-5}$ Torr and the pressure of the gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystallites have been annealed at $N_2$ gas. Nitrogen have been used as ambient gases. Strong blue and green luminescence from Si nanocrystallites has been observed in room temperature by photoluminescence and its peak energies shift to green when the wavelength is increased from 355-1064 nm

Piezoelectric ceramics of PZT have been developed to apply for transformers in notebook. Use of piezoelectric ceramics in applications like piezoelectric transformers was made possible by the development of new materials with high electromechanical coupling coefficients and high mechanical quality factor. "Hard" ferroelectiric ceramics of complex composition based on lead zirconate titanate with Mn additive have been prepared. The perovskitic phase reaction of the oxides. The crucial role played by the intermediate mixing and grinding procedures in the assessment of the final properties of the material was investigated. Densification up to approximately the theoretical density value was achieved. The polarization was obtained by subjecting the samples at $30kVcm^{-1}$ poling electric field, in a silicon oil bath heated at $110^{\circ}C$. Their microstructural and morphological properties were checked by X-ray diffraction analysis and scanning electron microscopy. The optimized samples presented very high qualify and electromechanical coupling factors, together with small dielectric loss.

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

We describe the preparation of a cobalt oxide in which the solid-pore architecture of the material is controllably varied. All $CoO_2$ gels derived from $CoCl_2$-based sol-gel synthesis, but exhibit markedly different final pore structures based on how the pore fluid is removed from forces that result from extraction are either low or nonexistent. These nanoscale mesoporous materials have higher $CoO_2$ crystallites. Controlling both the pore and solid architecture on the nanoscale offers a strategy for the design of new supercapacitor and charge-storage materials.

In this paper, the Flexible information display was implemented using AC powder electroluminescent device. ZnS:Cu and $BaTiO_3$ was used as a phosphor and dielectric respectively. The preparation of phosphor and dielectric layer was performed with screen printing. The implemented system of the Flexible information display was divided as following; EL display, driving circuit, software for driving. The properties of fabricated devices was measured with EL spectrum and brightness.

In this paper, we evaluated the dielectric properties and thermal analysis on sliced XLPE sheet from 154kV power cable and compared with 22kV XLPE sheet. As the result, dielectric constant was not applied voltage dependance but trended to increase with temperature. Test result presented that tan$\delta$ of XLPE with Interface was trend to increased.

In this study, we investigate the optical characteristics of merocyanine dye Langmuir-Blodgett(LB) film using the oscillation characteristics of quartz crystal. As results, the resistance and frequency shift at the parallel resonance under the UV irradiation is to be going down. This behaviour of resistance and frequency is different from the case of general mass adsorption into the organic film on the quartz crystal. Generally the frequency decrease of quartz crystal oscillator, which has been considered as mass loading, goes along with the resistance increase. Thus it has been suggested that the J-aggregate dissociation in merocyanine dye LB film by UV irradiation give rise to transformation of oscillation characteristics of quartz crystal.

The internal quantum efficiency of EL devices using fluorescent organic materials is limited within 25% because of the triplet excitons which can hardly emit light. So there has been considerable interest in finding ways to obtain light emission from triplet excitons. One approach has been to add phosphorescent compounds to one of the layers in an EL device. Then triplet excitons can transfer to these phosphorescent molecules and emit light. In this study, multilayer organic light-emitting devices with phosphorescent emitter, tris (2-phenylpyridine)iridium ($Ir(ppy)_3$) were prepared. The device exhibited power luminous efficiency of 1.07 1m/W at the luminance of $61.6\;cd/m^2$ diriven at the voltage of 9 V and current density of $1.9mA/cm^2$. At the luminance of $100\;cd/m^2$, the luminous efficiency was obtained 1.05 lm/W with the voltage of 9.5 V and the corrent density of $2.8\;mA/cm^2$.

We have successfully fabricated SiC Schottky diodes using Al, Ni, Ti metallization systems. Schottky barrier height and other parameter have been measured by using I-V and C-V technique. The measured barreir heights depend on the metal and measurement techniques used. The barrier heights were 1.85eV(Al), 1.63eV(Ni), 0.97eV(Ti). The Ideality factors were 1.16(Al), 1.07(Ni), 1.05(Ti). Thermal stress tests were performed.

The high mobilitie sallow larger current to be reached under operation in the space charge limited conduction region, hence facilitate access to higher luminance as required for passive matrix panel. In this work, we have investigated the molecular alignment control effect of organic electroluminescent devices. we aligned the p-sexiphenyl(6p) using a simple rubbing treatment. We studied the anisotropic optical properties and electrical characteristics.

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

Crosstalk is the primary cause of image distortion in active matrix liquid crystal displays (AMLCD). Crosstalk produces voltage errors that limit gray scale fidelity and consequently, degrades display resolution, contrast ratio, color fidelity, and image quality. In this study, crosstalk phenomena of some methods to compensate level shift voltages has been simulated. This will be contributed to find the way to design the excellent image quality of the TFT-LCDs.

In recent years, the Thin Film Transistor Liquid Crystal Display (TFT-LCD) is used in a variety of products as an interfacing device between human and them. Since TFT-LCDs have trend toward larger Panel sizes and higher spatial and/or gray-scale resolution, pixel charging characteristic is very important for the large panel size and high resolution TFT-LCD pixel characteristics. In this paper, both data line precharging method and line time extension (LiTEX) method is applied to Pixel Design Array Simulation Tool (PDAST) and the pixel charging characteristics of TFT-LCD array were simulated, which were compared with the results calculated by both PDAST In which the conventional device model of a-Si TFTs and gate step method is implemented.

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces, where the gate dielectrics were treated by the two methods which are the deposition of Octadecyltrichlorosilane (OTS) on the insulator and rubbing the insulator surface. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-7}$ Torr and at a deposition rate of $0.3{\AA}/sec$. Aluminum and gold were used for the gate and source/drain electrodes. OTS is used as a self-alignment layer between $SiO_2$ and pentacene. The gate dielectric surface was rubbed before pentacene is deposited on the insulator. In order to confirm the changes of the surface morphology the atomic force microscopy (AFM) was utilized. The characteristics of the fabricated TFTs are measured to clarify the effects of the surface treatment.

We attempted to fabricate polyurethane derivatives (PU-CN, PU-DCM) LB films by using LB method. Also, we investigated the monolayer behavior at the air-water interface by surface pressure-area ($\pi$-A) isotherms. And, the surface morphologies and the physicochemical properties of LB films were investigated by atomic force microscopy (AFM) and UV-vis spectroscopy, respectively. Also, the electrical properties of polyurethane derivatives LB films were investigated by using the conductivity, the dielectric constant and activation energy. In the surface morphologies, physicochemical, electrical properties of polyurethane derivatives LB films, the properties is different as to the Polyurethane derivatives, it is considered that this phenomena could be described by the difference of lumophore pendant which was adhered at PU main chain.

This paper presents a low temperature excimer-laser-crystallization that produces directionally solidified microstructure in Si thin films. The process involves (1) a complete melting of selected area via irradiation through a patterned mask. and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the superlateral growth(SLG) distance. (3) lateral growth extended over a number of iterative steps. Grains that grow continuously to the vertical direction were demonstrated. We discuss sequential lateral solidification principle, experiment.

In the study We measured the MDC across lipidazobenzene monolayer system was the substrate. We discuss the cis-trans isomerization in Langmuir-Blodgett(LB) films and examine the relationship between the structure of mixed LB films and the generation of MDCs due to photoisomerization. As results, mixed induce monolayer of view to memory and switching, it's own function by particles level think. Also, transmission results of stimulus signal it's form by current to appear.

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto Y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

In this paper generation from of displacement current was compared and measured with light stimulus induce monolayers which 8A5H with azobenzene and arac.acid mixed. Light response of two monolayers which dynamics behavior are different was compared and measured though they are the same isomer The experimental results are as following; In the case of light stimulus mixed monolayers reacted less than 845H about 5[fA]. This is the mason molecule dynamic behaviour and trans was not activated due to its very chain length.

The (1-x)$MgTiO_3-xSrTiO_3$$(x=0.03{\sim}0.04)$ ceramics were fabricated by conventional mixed oxide method. The structural properties and microwave dielectric properties were investigated by XRD, SEM and HP8757D network analyzer. In the $0.96MgTiO_3-0.04SrTiO_3$ ceramics, the perovskite structure $SrTiO_3$ and ilmenite structure $MgTiO_3$ phases were coexisted. The dielectric constant(${\varepsilon}_r$ and temperature coefficient of resonant frequency(${\tau}_f$) was increased with addition of $SrTiO_3$. In the case of $0.96MgTiO_3-0.04SrTiO_3$ ceramics sintered at $1325^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.13, 7956(at 7.27GHz), +1.7568ppm/$^{\circ}C$, respectively.

Objective is to design a high performance purification filter system of reactor coolant and seal injection system at nuclear power station. The purification filter systems play an important role in the stability of the nuclear and volume control system which consist the primary network systems of the nuclear power station. But the users of the purification filter systems frequently suffer from high maintenance cost which comes from lack of understanding of the system technology and domestic suppliers. It is time to establish a high performance domestic filter system manufacturing technology and optimum design for wide use in industrial applications.

The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

압전 세라믹은 공정 조건에 따라 압전 및 전기적 특성이 큰 영향을 받는다. 최적의 조건을 갖는 압전변압기를 제조하기 위해서는 이런 공정의 변수들의 변화를 관찰할 필요성이 있다. 본 논문에서는 이런 압전 특성을 관찰하고자, 하소의 온도를 $850^{\circ}C$에서 $900^{\circ}C$도까지 시간변화에 따라 phase 변화를 XRD로 관찰하고 burn out의 온도에 따른 기공변화 및 소결의 온도변화에 따른 임피던스 어낼라이저로 주파수 특성을 관찰하였다. 이렇게 조사해본 결과 하소를 $900^{\circ}C$에서 3시간 burn out을 $500^{\circ}C$에서 2시간, 소결을 $1250^{\circ}C$에서 2 시간 한 경우가 $Q_m>1000$, $k_p>0.40$ 값을 얻을 수 있었다.

Dielectric strength of insulators made of epoxy composites rapidly decreases due to ageing to interfaces between the matrix resin and filler particles. The adhesion variation of interfaces caused by moisture absorption also alters electrical properties that are the basic characteristics of insulators, particularly, in out door use. In this paper, electrical properties of epoxy/$SiO_2$ composites were investigated at boiling absorption condition to observe that influence of moisture. The breakdown time of samples were measured under AC 6[kV] applied voltage, and the variation of lifetime was varified by using Weibull distribution function.

폴리에틸렌은 우수한 특성으로 절연재료분야에 광범위하게 사용되지만, 공간전하축적과 트리진전의 단점을 가지고 있으므로 이를 개선하기 위해 첨가제, 촉매법, 혼합법 등 다양한 방법들이 시도되어왔다. 메탈로센과 같은 촉매법과 첨가제법 등은 고분자의 전기적 특성은 개선되지만 가공성이 어려워지는 둥의 개선점들이 많이 존재한다. 하지만, 혼합법은 고분자 종류의 다양성과 시료 제작의 용이성으로 인하여 성질 개선법으로 자주 연구되고 있다. 혼합으로 인하여 재료의 특성에 따라 원 고분자의 고차구조가 변화되며 이는 원시료의 절연성능에 큰 영향을 미친다. 본 연구실에서는 선형저밀도 폴리에틸렌과 에틸렌비닐아세테이트를 중량비에 따라 혼합한 필름의 전기적 특성 고찰을 위하여 이미 전기 전도 특성과 유전특성에 대해 연구하여 혼합비 70 : 30인 시료와 혼합비 50 : 50인 시료의 전기적 특성이 우수함을 확인한 바가 있다. 따라서, 본 논문에서는 절연재료의 수명을 결정짓는 전원인가법에 따른 절연파괴 특성에 대해 물성분석을 통한 고차구조의 변화와의 상관성을 조사하였다.

The performance of insulate materials gets worse with stress time in power system and because this causes lowering of function and accidents in equipment, development and performance improvement of excellent insulate materials are needed to make stable system. In this paper, to study the influence of degradation in XLPE, inner semiconducting layer and outer semiconducting layer, we studied dielectric characteristics at temperature $25{\sim}100[^{\circ}C]$ and frequency $20{\sim}1[MHz]$ and volume resistivity at temperature $25{\sim}100^{\circ}C$, voltage.

The properties of piezoelectric and dielectric for 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$ - $0.95PbZr_{x}Ti_{1-x}O_{3}$ compositions have been investigated. In the composition of 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$-$0.95PbZr_{0.51}Ti_{0.49}O_{3}$, the values of $k_p$ and ${\varepsilon_{33}}^T/{\varepsilon}_0$ are maximized, but $Q_m$ was minimized ($k_p$=56.5[%], $Q_m$=1130, $d_{33}$=258[pC/N], ${\varepsilon_{33}}^T/{\varepsilon}_0$=1170). The grain size was suppressed and the uniformity of gram was improved at the $1100[^{\circ}C]$. Dielectric constant increase at the Ti rich, but decrease at the Zr rich after poling. Because the dielectric constant after poling is determined by compromising effects between dipole switching and electostriction inducing stress(dielectric constant increasing factor) and dipole rotation to the poling direction (dielectric constant decreasing factor).

The characteristics of Xe discharge lamp are described in this paper. In this paper, FFL is changed discharge space dimensions like discharge space gap, phosphor layer and dielectric layer thickness to find FFL with high efficiency.

고온 초전도 YBCO 박막을 Nd:YAG 레이저를 이용하여 MgO 기판에 증착시켰다. 박막을 마이크로스트립형 통신소자로 제작하기 위해 포토리스그래피 방법으로 습식 에칭을 시켰다. 제작된 박막에 접지면을 입히기 위해 스퍼터링 방식으로 Ti 충을 30 nm 증착하고, 열 증발기로 Ag를 $2{\mu}m$ 정도로 증착을 시켰다. 소자의 주파수 응답을 측정하기 위해 캐비티를 제작하여 측정하였다. 제작된 필터의 중심 주파수는 14 GHz이다. 박막을 냉각시켜며 그 중심 주파수를 측정하여 임계 온도를 측정할 수 있었다. 필터는 두 가지 디자인을 이용하였으며, 임계 온도에서의 중심주파수가 일정하게 이동함을 관찰할 수 있었다.

In general, the reason of the abnormal corrosion on oil tanks has been proved the MIC (Microbiologically Influenced Corrosion). The concern about MIC is increasing more and more now days. Therefore, this paper presents the results of basic study on the Microbiologically Influenced Corrosion of gas pipeline running parallel with 22.9kV D/L (Distribution Line).

Oxide of the form $Mn_{3}O_{4}-NiO-Fe_{2}O_{3}$ present properties that make them useful as multilayer chip NTC thermistor for mobile phone NTC thermistor electric properties of $Mn_{3}O_{4}-NiO-Fe_{2}O_{3}$ system has been measured as a function of temperature and composition. In $Mn_{3}O_{4}-NiO-Fe_{2}O_{3}$ composition, it can be seen that resistivity and B-constant were increased as the ratio of $Mn_{3}O_{4}/F_{2}O_{3}$ and $Mn_{3}O_{4}$/NiO was increased. In particular, resistance change ratio (${\Delta}R$), the important factor for reliability varied within ${\pm}1%$, indicating the compositions of these products could be available for mobile phone.

Piezoelectric ZnO thin films were deposited on slide glass by Facing Targets Sputtering(FTS). The Facing Targets Sputtering system can deposit thin film in plasma-free situation and change the deposition condition in wide range. The characteristics of zinc oxide thin films on power, working pressure, and substrate temperature were investigated by XRD (x-ray diffractometer), alpha-step (Tencor) and SEM (Scanning Electron Microscopy) analyses. In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin films with good c-axis orientation.

In this paper, new Partial Discharge (PD) detection technique using Pockels-cell was proposed. For this purpose, PD was generated from needle-plane electrode in air and detected by optical measuring system using Pockets cell, based on Mach-Zehnder interferometer, consisting of He-Ne laser, single mode optical fiber, 50/50 beam splitter and photo detector. We show the characteristic of the proto-type sensor for the corona discharge.

정상 상태의 gas-insulated switchgear (CIS) 내부에서 발생한 부분방전 신호를 검출 할 수 있는 UHF 부분방전 검출 센서를 실험용 362 kV GIS에 적용하였다. GIS 내부에 알루미늄 이물질을 투입한 다음 120 - 180 kVrms 전압을 단계적으로 인가하고 장시간 인가전압 위상에 대한 UHF 부분방전 신호를 측정하였다. 인가전압을 높일수록 검출된 방전신호의 간격이 늘어났으며, 이물질로 사용한 알루미늄선의 길이가 길어질수록 이물질의 상승고도는 증가하였다. GIS 내부에서 이물질의 운동에 대한 간단한 계산에서도 비슷한 경향을 보임을 확인하였다.

The application of low dieletric constant material instead of $SiO_2$ has been considered to reduce interconnection delay, crosstalk, power exhaustion. Methylsilsesquioxane (MSSQ) have a dieletric constant less than k>3 which is lower than that for the convention $SiO_2$ insulator ($k{\sim}4$). The Propose of this study is to know etching rate of MSSQ. Expermentation in this paper use RIE(Reactive ion Etching) and centre) flow rate of $CF_4/O_2$ gas, RF power.

This paper describes the metalization burn out characteristics and spreading-out mechanisms of metalized polypropylene films (MPPF) with defects. As a result, the variation in diameter of the demetalized spots was verified and the spreading-out processes of the demetalized spots were characterized and illustrated by several patterns. Subsequent self healing events was also depicted in this paper.

Ultra high frequency (UHF) signals caused by the bouncing motion of aluminium particles in the 352 kV gas-insulated switchgear (GIS) test chamber were measured in order to investigate the signal pattern against the applied voltage phase and ultra sonic signals.

In this paper, electric field distribution of GIS by changing conductivity of spacer is analysed by the use of 3 dimensional Surface Charge Method. We find electric field distribution inside GIS was much influenced when volume resistance are lower than $10^7[\Omega-cm]$.

In compared with air insulated switchgear, GIS has a high efficiency and confidence So the transformer substation can be reduced the size to 1/10. Insulation method using $SF_6$ gas has a very excellent insulation characteristics for high pressure equipment but has a characteristics that insulation heredity is changed for internal unequal electric field. So analysis of electromagnetic field in GIS is very important basic data for structure design and trouble diagnosis process. In compared with established method, SNM in this paper observes variation of the electromagnetic field with real time and get result very similar to measurement. In order to know the variation of electromagnetic field distribution for transient response for time and position, variations are observed when the spacer is bonded and metal particles are moving fast.

In this paper, propagation and damping characteristics of PD Pulse in GIS are analyzed using SNM. These characteristics are very important to make a diagnosis and protection of accident in GIS. SNM is numerical method in time domain and very useful method to analyze 3-Dimensional structure such as GIS. GIS modeling is made simply as the form of coaxial cable and then spacers are inserted in it. The scattering and reflection in the GIS are appeared and damping characteristics of PD pulse are shown. When simulation using SNM compare to measurement, two results are similar.

In this paper, the measured ultrasonic signal in GIS was filtered by wavelet transform, and then the origin signal and the filtered signals were analyzed by statistic operators. As a result, it was confirmed that different characteristics were obtained with the impact of particle and with partial discharge inception.

This paper describes the particle-initiated breakdown characteristics of various spacers, which have a ribbed surface, in the presence of a metallic particle. The particle was attached on the surface of each spacer. The breakdown voltages were measured by changing the length and thickness of the rib. Also the electrical field analyses were performed. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

본 논문에서는, 모의 진공차단기 내에서의 구리 증기입자의 공간적 및 시간적 밀도분포를 레이저유기형광법 (LIF)에 의해 계측하였다. 레이저 트리거 방전에 의해 생성된 어블레이션(ablation) 플라즈마에서의 구리입자를 324.75nm의 Nd:YAG 레이저를 이용하여 여기시키고, 이때 여기준위에서 기저준위로 천이할 때의 형광신호(510.55nm)를 분광기 및 광전자증배관을 이용하여 계측하였다. 음극점으로부터 넓은 각도를 가지고 전자가 튀어나오며, 넓은 범위에 걸쳐 전자나 이온이 존재하는 것을 알 수 있었다. 또한 음극으로부터 8mm ( x=0, y=8mm 진 위치에서 가장 강한 신호와, 2mm ( x=0, y=2mm 가장 약한 신호를 얻을 수 있었다.

Silicone insulators have many advantages over porcelain insulators. Especially silicone insulators have good characteristics of impact hardness, surface insulation, ease of processing, mass productivity and don't have risk of bombardment and vandalism. Recently insulation part made by silicone are becoming widely used. In this paper we introduce the development of Sealing End for 132kV XLPE cable with silicone composite hollow insulator and the adoption of it to a actual transmission line in abroad. This paper contains of design procedure, structure, electrical performance of it.

Treeing inhibitors are added in XLPE matrix to investigate the effect on electrical properties of XLPE. The treeing inhibitors are barbituric acid, 4- (4-Nitrophenylazo) resorcinol and 4-(4-Nitrophenylazo) naphthol. Added amount of each treeing inhibitors were varied form 0phr to 2.0phr. In order to know the changes of electrical properties, break down strength, $tan{\delta}$, and ${\varepsilon}_r$ were measured. Experimental results showed that electrical properties of each sample was slightly changed by amount of additives.

Recently polymer insulators are being used for outdoor high voltage applications. Polymer insulators for transmission line have significant advantages over porcelain and glass insulators, especially for ultra-high voltage(UHV) transmission lines. In this paper, the design trend and method polymer insulator are investigated and Aging test method is analysed to know life time of insulator.

유한요소법을 이용하여 대전력용 트리가트론의 전극 전압의 극성 변화와 전극 구조의 변화에 따른 전계 분포를 해석하였다. 시동 특성을 좋게 하기 위해서는 트리거 전극과 접지 전극 사이의 적절한 거리를 찾아야 한다. 유한요소법을 이용한 전계 분포를 가지고 이 거리를 정할 수 있다. 본 논문은 트리거 갭과 주 갭(트리거 전극과 반대 주전극 사이)에서 동시에 절연 파괴가 일어날 때 트리가트론이 최적으로 동작한다는 연구 결과를 바탕으로 한다. 본 논문은 실험을 위한 예비 단계로서, 시뮬레이션을 통하여 최적의 전극 구조를 찾는데 드는 비용과 시간을 줄일 수 있다.

In this paper we present not only propagation of streamer but also chemical processes in air. The results of two-dimensional simulation are that chemical species have different densities in spatial domain and temporal domain. We show that photoionization plays important roles in streamer propagation and chemical reactions.

The optimization of electrode geometry is the most important technology for producing the ozone with high concentration and efficiency. An optimization method for a discharge gap, an air cleaner equipment, voltage apply device, pressure and air flow quantity. In our experiments, the high frequency power were applied to the discharge gap with 23-1G(Silent Discharge). The ozone characteristics was measured with air as a supplied gas, which can be used as basic data for the development of small size ozone generator.

In this paper, the discharge characteristics of AC PDP, one of the leading technologies currently under development for large-area flat displays, is computed by using Finite Element Method(FEM) combined with Flux-corrected Transport(FCT) algorithm. Up to now, many simulations of AC PDP have been mainly done by Finite Difference Method(FDM). But we simulated the AC PDP by using FEM-FCT method which discretizes the region of interest with unstructured grids. FEM-FCT method can reduce the computational cost because of refining locally where the physical quantities have steep gradients and is more efficient in solving discharge problems, such as a AC PDP. Results are presented in Ne-Xe(4%) gas mixture for a gas pressure of 400 Torr and as the discharge proceeds, the space and time variations of the electron and ion densities, potential and wall charges on the dielectric are described. Results from our simulation by FEM-FCT are similar to those from simulation by FDM and are more efficient in computational cost reduction.

By manufacturing 8" class $146{\times}96mm$ "flat fluorescent lamp" of new form that uses xenon gas, an electric optical characteristic has been analyzed. Lamp shows that the lamp surface brightness is 4900 cd/m2 and the birghtness uniformity degree is 90% under sine wave of 15khz and applied voltage of 1,000 Vrms.

The characteristics of ozone generation were investigated in accordance with varying the diameter of internal electrode in an ozonizer using RF power source. The characteristics of ozone generation were improved with the diameter of internal electrode increased, but thermal loss was increased. Therefore, it was found that it is inevitable that the cooler has to be installed in an ozonizer which uses RF power source.

(100) single crystal Si은 좋은 anisotropy etching 성질과 기계적 강도를 가지고 있어 MEMS 구조용 소재로 사용되고 있다. (100) Si의 신뢰성 평가를 위하여 필요한 탄성계수를 측정하고 반복동작에 의한 응력에 의한 파손특성을 평가하기 위하여 micromachining을 통해 resonator를 제작하였다. Resonator의 공진주파수를 분석함으로써 탄성계수를 추하고자 하였으며 반복응력에 대한 파괴특성을 평가하기 위하여 공진 상태에서 파괴가 일어날 때까지의 사이를 수를 측정함으로써 반복음력에 대한 Si의 피로특성을 평가하고자 하였다. 실험 결과 (100) Si의 <110> 방향으로의 탄성 개수를 측정할 수 있었으며 Si의 미세파손의 응력에 대한 의존성을 평가할 수 있었다. 평가결과 Si의 미세파손 메커니즘은 억제된 균열의 진전에 의한 subcritical crack에 의한 피로파괴 현상보다는 과도한 스트레스에 의한 순간적인 균열전파에 의해 지배됨을 관찰할 수 있었다.

Micromolding process에 의한 refractive microlens array를 제작한다. PDMS, UV curable acryl adhesive 등 여러 가지 polymer 재료를 시도한다. 기존의 공장에서 주로 사용되던 etched bulk silicon, electroplated metal 등의 구조물이 아닌, polymer 구조물을 mold로 사용한다. Micromolding process에 의해 제작되는 microlens의 특성은 mold의 험상에 의해 결정된다. Reflow 공정에 의해 제작된 photoresist microlens는 매우 우수한 표면 특성과 형상 대칭성을 보여주므로, microlens의 mold로서 사용하기에 적합하다.

본 논문에서는 적외선과 같이 주파수가 Tera Hz 영역인 극초고주파에서 사용할 수 있는 Horn형 안테나의 제조를 위한 독창적인 방법을 제시하고 실험적인 검증을 하였다. 파장이 $10{\mu}m$ 부근인 전자기파에 대응될 수 있는 안테나의 구조에 대한 시뮬레이션을 하였으며 이를 기준으로 안테나 어레이를 제조하기 위한 기초실험을 하였다. 기존에 사용되던 LIGA-like 공정과는 대조적으로 Columnar illumination 방법을 사용하였으며 $300{\mu}m$ 두께의 SU-8에 대하여 수직벽을 제조할 수 있었고 기판 위치에 일정한 각도를 줌으로서 경사면을 갖는 구조를 제조하였으며 기판을 회전시킴으로서 원뿔형의 Horn형 안테나 어레이를 제조할 수 있는 방안을 제시하였다.

This study reports the fluidic handling method using hydrophobic patterns inside PDMS microchannels. In order to obtain hydrophobic patterns, we pattern fluorcarbon(FC) film surfaces by lift-off process. FC films are deposited by spin coating method and plasma polymerization method. Hydrophobic surfaces are used as the barriers to control fluid flow. Injected liquid is spontaneously filled up inside PDMS-microchannels by the capillary action. Liquid flow stops when it meets hydrophobic regions which can be the barrier against fluid flow. Then, again, when liquid is pressurized externally, liquid can move toward another hydrophilic region by external air pressure. Contact angle analyses are performed on fluorocarbon films to estimate the wettability of film surfaces.

본 논문은 전자 패키징의 방열 성능을 개선하기 위하여 초소형 히트 파이프를 제작하고 열전달 성능을 시험한 결과를 보여준다. IC 칩이 점점 고성능화되고 고집적화되어 감에 따라 발열 문제가 대두되는데, 이 열은 전도만으로는 충분히 소산시킬 수 없고 패키징 표면에 별도의 장치를 장착하는 것은 시스템 소형화의 장애 요소가 된다. 따라서, 고성능 칩 개발을 위한 선결 과제로 고성능 초소형 냉각 장치가 요구되고 있다. 히트파이프는 밀봉된 파이프 내의 2상 유동과 상변화 잠열을 이용하여 열원으로부터 히트 싱크로 열을 효과적으로 전달하는 열교환 장치이다. 본 논문에서는 전자 패키징 내에 집적화할 수 있도록 초소형 히트 파이프 어레이를 제작하여 그 성능을 시험한 결과 증발부의 온도가 $12.1^{\circ}C$ 감소됨을 보인다.

A narrow slot in the broad wall of a rectangular waveguide is analysed using a Spatial Network Method[1] which takes account of the waveguide wall thickness. In essence, SNM is used to solve arbitrary shape and materials constant, derived from maxwell's equations to find the tangential electric fields on the upper and lower surfaces of the slot. In this paper, applying to the offset and length[2] which yield a zero equivalent shunt susceptance, analysing single and 4 array slot antenna. The current of the transient analysis shows each the times. Analysed result of SNM is verified by the method of moment and HFSS.

The best simulation condition for the fiber collimator that uses ball lenses was investigated. This kind of fiber collimator can be used in a Micro-Optical-Cross-Connects(MOXC). MOXC is composed of collimating ball lenses, micro mirrors and single-mode fibers. In order to design a MOXC, it is very important to calculate beam path, beam radius, divergence angle that determines the insertion loss of the MOXC. Since the beam profile from the fiber facet is not exact Gaussian profile, it was found that the simulation condition in which beam waist exists on the fiber facet, ignoring Numerical Aperture(NA), gives best agreement with the experimental results. Beam radii were measured with conventional knife edge method.

In this paper, Dielectirc waveguides have been calculated using the vector finite element method. This method is introduced that allows propagation constants and electric field distribution to be computed directly. In order to obtain more accurate solutions, Second order vector elements are proposed.

In this paper, channel dropping filters made of microring structure are analyzed by using a finite difference time domain(FDTD) method with Berenger's perfectly matched layer(PML) absorbing boundary condition.

We investigate the low loss of star coupler which employs UV-written tapered waveguide and apply it to AWG. It exhibits the lower loss due to the gradual increase of the width of the UV-written taper waveguide than the conventional star coupler, which is improved by as much as 0.49dB.

본 논문에서는 광섬유 장주기 격자쌍과 두 장주기 격자 사이에 삽입된 어븀 첨가 광섬유를 이용하며, 광섬유 브래그 격자 센서 헤드에 가해지는 동적 스트레인을 측정하기 위한 새로운 고분해능 파장 측정 시스템을 제안하였다. 제안된 측정 시스템에 대한 실험을 통해 제안된 시스템이 기존의 비대칭 마하 젠더 간섭계를 이용한 파장 측정 시스템에 비하여 훨씬 높은 분해능을 갖고, 외부 온도 변화에 대한 변동 또한 훨씬 적어진 것을 보였다.

This paper describes present research conditions and plans of transmission and substation department in KEPCO. We describe an overview of general status of research environment in KEPRI. And we describe the results of the research in 1999, items of the research in 2000 and research plans of the long and short terms in transmission and substation department.

We explained the present and future tendency in the electric machinery research and development status. Being started WTO system and in the Infinite competitiveness, we hope that this paper will be helpful to strengthen competitiveness of our electric machinery industry.

This paper describes the recent research and technical trend of power cable system. Compact sizing with long length and large capacity is the main trend of the power cable. From the manufacturing process to the monitoring of the underground power line, various new techniques are being developed for reliability and high quality such as in-line monitoring system, triple common extrusion, PD measurement system, new type completion test, etc.