Ni/Au 쇼트키 접합의 산화를 통해 항복전압이 증가하고 누설 전류가 감소한 수평방향 GaN 쇼트키 장벽 다이오드를 제작하였다. 산화 과정 후, 턴-온 전압이 미세하게 증가하였으며 높은 애노드 전압하에서 애노드 전류가 증가하였다. 5분과 10분의 산화 과정 후, 누설 전류는 1nA 이하 수준으로 현저히 감소하였다. Edge Termination 방법으로 Floating Metal Ring을 사용하고, 산화 과정을 적용하여 제안된 GaN 쇼트키 장벽 다이오드의 항복전압은 750볼트의 큰 값을 얻을 수 있었다. 상온과 $125^{\circ}C$ 에서 제작한 GaN 쇼트키 장벽 다이오드의 역방향 회복 파형도 측정하였으며, 제작한 소자는 매우 빠른 역방향 회복 특성을 보였다.

The optical and electrical properties of indium tin oxide (ITO) thin films deposited at room temperature can be substantially enhanced by adopting a two-step process. In the first step, the films (50 nm thick) were grown by pulsed laser deposition (PLD) on glass substrate at room temperature and quickly annealed at $400^{\circ}C$ in nitrogen ambient for 1 minute by using rapid thermal annealing method. The process was completed by additional deposition (150 nm thick) on annealed film at room temperature. High quality ITO films grown by two-step process at room temperature could be obtained with the resistivity of $3.02{\times}10^{-4}{\Omega}cm$, the carrier mobility of 32.07 $cm^2/Vs$, and the transparency above 90 % in visible region mainly due to the enhancement of the film crystallinity and the increase of grain size.

본 연구는 GIS 진단신뢰성 향상기술 개발을 목적으로, 16개의 인위적 결함을 이용하여 부분방전 신호를 발생시키고 검출하여 그 패턴인식 확률을 높이기 위하여 신경망에 Genetic Algorithm (GA) 을 적용하였다. 이를 위하여 다음과 같은 5가지 서로 다른 신경망 모델을 선택하였다: Back Propagation (BP), Jordan-Elman Network (JEN), Principal Component Analysis (PCA), Self-Organizing Feature Map (SOFM) 및 Support Vector Machine (SVM). 이와 같이 선택된 모델에 동일한 데이터를 학습 시키고 패턴인식 확률을 비교 및 분석하였다. 실험 결과에 의하면, BP의 인식률이 가장 높고 다음으로 JEN의 인식률이 높이 나타났으며, 후자의 경우 모든 결함에 대하여 정확한 패턴분류를 한 반면에 전자의 경우 1.8% 의 분류 오차가 발생하였다. 따라서 인식률이 높은 신경망이 더 정확한 패턴분류를 보장하지 못한다는 실험적 결과를 고려 할 때, 인식률이 높은 두 개의 모델을 선정하여 각각의 출력에 일정한 가중치를 주고 합산하여 새로운 출력을 얻는 방법을 제안한다.

Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD)를 이용하여 공정온도 $150^{\circ}C$에서 Nanocrystalline silicon (nc-Si) 박막을 증착하였다. 실험에서 헬륨(He)가스, 수소($H_2$)가스 그리고 헬륨(He)과 수소($H_2$)의 혼합가스로 희석한 사일렌($SiH_4$)을 반응가스로 이용하였다. 이 혼합가스는 3sccm의 사일렌($SiH_4$)에 헬륨(He)과 수소($H_2$)의 주입율을 20sccm에서부터 60sccm까지 변화시켜 조건을 달리하여 사용했다. 증착한 Nc-Si 박막을 X-ray diffraction (XRD)으로 분석하여 각각의 조건에 대한 Nc-Si 박막의 속성을 연구하였다. 헬륨(He) 또는 수소($H_2$) 혼합가스의 주입율이 커지면서 <111>과 <222>의 최고점(peak)이 더 높아졌으며 결정화 되지 않고 비결정질로 남아 있는 성장층(incubation layer)이 얇아졌다. 이 결과는 nc-Si를 증착할 때 사용한 수소($H_2$) 플라즈마와 헬륨(He) 플라즈마의 효과로 설명할 수 있다. 실험을 통해 ICP-CVD로 증착한 nc-Si 박막을 박막 전계효과트랜지스터 (TFT)에서 우수한 특성의 전자수송층(active layer)으로 사용할 수 있는 것을 확인하였다.

In this study, tunable dielectric materials are important for resonator, variable capacitor, phased array antenna and other devices application. In this paper, Dielectric constant increased and tuning range increased with the increased of $BaSrTiO_3/Li_{2}CO_{3}$ content, which probably can be explained by the substitution of Ba3+, Li1+ on BaTiO3 lattice. The tunability and dielectric loss of the $BaSrTiO_2/Li_{2}CO_{3}$ thick film, sintered at $1150^{\circ}C$, were about 43 % and 0.234 at 10$\sim$15 MHz, respectively. In case of BaSrTi/MgO, Dielectric constant decreased and tenability increased with the added of $BaSrTiO_3/MgO$. The ferroelectrics properties were distinct when adding Li to BST ceramic thick film, and paraelectrics pattern was distinct when adding Mg.

일반적으로 저압계통의 고장전류를 차단하기 위해 설치된 차단기의 차단원리는 주로 역전압발생법올 이용하고 있다. 역전압발생법은 효과적으로 저압계통의 고장전류를 차단할 수 있으나, 제한된 한류성능과 긴 아킹 시간은 차단기는 물론 주변 전력기기에 전기적/열적/기계적 스트레스를 주게 된다. 국내외 업체는 고장전류를 보다 빠르고 효과적으로 제한 및 차단을 할 수 있는 한류형 차단기를 제안하고 있는 실정이다. 저압계통의 경우, 정온도계수 (Positive Temperature Coefficient, PTC) 특성을 가지는 한류소자를 기존 차단기에 직렬 혹은 병렬로 연결하여 저압계통의 고장전류를 매우 빠르고 효과적으로 제한 및 차단하는 추세에 있으며, 또한 PTC 한류소자를 이용함으로써 저압계통의 차단보호협조를 효과적으로 구현하고자 하고 있다. PTC 한류소자는 소자는 열팽창이 큰 비전도성 성분과 열팽창이 작은 전도성 성분이 혼합되어 구성되며, 소자의 온도가 증가함에 따라 비전도성 성분이 상대적으로 큰 부피 팽창을 하여 저항이 증가하게 된다. 이러한 PTC 소자를 전력계통에 적용함으로써 고장전류에 따른 줄열에 의한 저항증가로 고장전류를 제한하게 된다. 본 연구에서는 일반적으로 배터리 보호용으로 사용되는 폴리에틸렌 수지 및 카본블랙으로 구성된 폴리머 PTC 한류소자를 이용하여, 기존의 저전력 배터리 보호 폴리머 PTC 소자로부터, 저압계통의 단락사고시 발생하는 단락전류를 효과적으로 제한할 수 있는 대전력 폴리머 PTC 소자를 개발하였다.

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ in $C_{3}F_{8}-Ar$ mixture gases were measured by Double shutter drift tube and calculated by multi-term approximation of the Boltzmann equation over the wide E/N range from 0.03 to 100 Td. And an inelastic collision cross sections for $C_{3}F_{8}$ molecular gas were redetermined for quantitative characteristic analysis.

광 간섭계는 광을 이용한 다양한 계측분야에 사용된다. 일반적인 광 간섭계의 지연단은 기계적인 광지연에 의해 저속이며, 시스템 구성상 안정성이 떨어지게 된다. 본 논문에서는 기존의 광간섭계 지연단의 기계적 방식을 배제한 광위상 변조기를 이용한 지연단을 설계하고 그 특성을 분석하였다. 제안된 광 간섭계는 1310nm 10GHz의 반복율을 갖는 광원과 광위상변조기를 이용한 전(全) 광섬유 형태로 안정한 구성을 하였다. 구성된 광간섭계는 광위상 변조기의 변조 전압, 변조 주파수의 변화에 의해 광지연시간의 쉬운 변조가 가능하였으며 최대 20ps 의 광지연시간을 얻을 수 있었다.

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

In this paper, a two-mass system for SiOG (Silicon on Glass) vibratory gyroscope with the need of frequency tuning was proposed to increase the stability of the device with wide bandwidth. Air damping and bandwidth were analyzed using MATLAB. The measured resonance frequency is 5.2 kHz, which is 7 kHz in the design. But the measured bandwidth is 450 Hz, similar to the designed bandwidth with 500 Hz. Also the frequency difference (210 Hz) between the driving and sensing part is smaller than the wide bandwidth of two mass system.

This study is about how to lower the driving voltage that enables to move the micro droplet by the EWOD (Electro Wetting On Dielectric) mechanism. EWOD is well known that it is used ${\mu}-TAS$ digital micro fluidics system. As the device which is fabricated with dielectric layer between electrode and micro droplet is applied voltage, the hydrophobic surface is changed into the hydrophilic surface by electrical property. Therefore, EWOD induces the movement of micro droplet with reducing contact angle of micro droplet. The driving voltage was depended on the dielectric constant of dielectric layer, thus it can be reduced by increase of dielectric constant. Typically, very high voltage ($100V{\sim}$) is used to move the micro droplet. In previous study, we used $Ta_{2}O_{5}$ as the dielectric layer and driving voltage was 23V that reduced 24 percent compared with $SiO_2$. In this study, we used $BZN(Bi_{2}O_{3}ZnO-Nb_{2}O_{5})$ layer which had high dielectric constant. It was operated the just 12V. And micro droplet was moved within Is on 15V. It was reduced the voltage until 35 percents compare with $Ta_{2}O_{5}$ and 50 percents compare with $SiO_2$. The movement of micro droplet within 1s was achieved with BZN (ferroelectrics)just on 15V.

$Cl_2$ 플라즈마에 있어서 Ar 가스의 첨가에 의한 효과를 보기 위해 Ar 첨가 비율 rf 전력, 반응로 압력을 변화시켜가며 그 에너지와 질량을 분석하였다. Ar 첨가 비율에 따른 각 입자들의 질량 분석을 통해서, Ar의 비율이 80% 일 때 물리적, 화학적 반응이 최대가 되는 것을 확인하였다. 또한 Ar 첨가 비율에 따른 각 이온들의 에너지 분석을 통해, Ar 가스의 첨가에 의해 $Cl^+$ 나 $Cl_2^+$ 이온들의 이온 선속은 증가하나 그 에너지가 감소하는 것을 확인하였다. 반응로 압력과 rf 전력의 제어를 통해 이온 전류밀도, 이온 에너지와 전자온도를 제어 할 수 있음을 확인하였고, Ar 첨가 비율을 변화시키면서 전자 밀도 분포 함수의 변화를 관찰하여 이를 통해 Ar 비율에 따른 이온화 비율과 전자 온도, 밀도 등의 관계를 확인하였다.

This paper presents the efficient plan for the EMI improvement from of TFT-LCD Module. It investigates the frequency characteristics of Power/Ground Plane of TFT-LCD drive circuit PCB concretely. After the frequency characteristics is reviewed, EMI improvement is tried to insert to RC termination between Power/Ground Plane and to shift resonance frequency. It is confirmed by a simulation result and RC Termination which is inserted the point where the resonance characteristics change is necessary. It applied in 19 "SXGA TFT-LCD drive circuits and the EMI improvement verification is described.

As technology is developed, customers want to use many functions in one system. Manufacturers want to reach the customer's needs, make systems more small, thin, light-weight. To make them real, it is necessary to make components to be small and thin. But components of power stage are big, thick and heavy-weighted yet. especially power inductor is the most significant component. This paper proposed a novel chip-type power inductor I-type inductor. Inductor that proposed has 3225-size, 5.6uH and 1.3A of max saturation current. And it has $R_{DC}$ of $0.25{\Omega}$ which is smaller than $0.45{\Omega}$ of chip-type inductor and $0.9{\Omega}$ of coil-type inductor.

This study was to measure the minuteness structure, dielectric properties of 0.03PCW-0.07PNN-0.9PZT ceramics according to sintering temperature manufacture the specimens with a general method. The results of this study were gotten such as follows. The crystal structure of ceramic changed the rombohedral structure into teteragonal structure according to rising sintering temperature in XRD. Dielectric constant at $20^{\circ}C$ showed its maximum value 510.599 in specimens sintered at $1100^{\circ}C$ and dielectric loss showed its minimum value 7.43% in specimens sintered at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of frequency showed its minimum value 0.029/kHz at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of temperature showed its minimum value $1.40/^{\circ}C$ at $1500^{\circ}C$.

QMS를 이용하여 chlorine based 유도결합 플라즈마 내 이온의 거동에 대한 분석을 하였다. 플라즈마 진단 가스로는 AT 가스에 $BCl_3$을 첨가하였으며 공정 압력을 변화하며 플라즈마 특성 변화를 분석하였다. 가스 혼합비에 따른 이온의 상대적인 밀도 변화에서 소량의 Ar가스의 첨가는 $BCl_3$ 가스의 이온화를 도와 $Cl^+$ 이온이 증가하는 현상을 보이며 Ar과 $BCl_3$의 이온화 에너지의 차이로 인해 $BCl_3$ 가스의 첨가비가 적을 수록, RF Power가 증가하며, 공정 압력이 낮올 수록 이중 피크 구조의 이온 에너지 분포를 확인 할 수 있었으며 이는 이온이 접지 전극에의 도달 시간과 평균 플라즈마 전위의 변화 때문이라고 사료된다.

전력용 IC에서 높은 항복전압의 구현을 위해서 RESURF구조가 많이 사용되고 있다. 하지만 하나의 칩 위에서 다양한 항복전압을 가지는 소자를 구현하기 위해서는 에피층의 농도가 각각 달라져야하는데 이는 공정상의 복잡함과 비용의 문제를 수반하게 된다. 이런 문제점에 따라 본 연구에서는 전력용 IC에서 항복전압이 다른 다수의 LDMOST를 추가 공정없이 에피 영역의 길이를 조절하여 구현할 수 있음을 해석적인 방볍과 2차원 소자 시뮬레이터를 이용하여 확인하였다.

Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

Indium Tim Oxide(ITO) thin film was prepared for TOLEDs by Facing Targets Sputtering(FTS) apparatus which can suppress the damage of organic layer due to the collisions of high energetic particles. In particular, ITO thin film was prepared with changing the distance between two targets for reduced the bombardment by high energetic particles such as ${\gamma}-electron$ or negative oxygen ions. The electrical and optical properties of ITO thin films as a function of distance of between two targets were measured. Additionally, the ITO thin films were prepared on the cell (cell : MgAg/LiF/EML/HTL/ bottom electrode) with distance of between two targets. And the I-V characteristics of ITO/cell was investigated.

The Al electrode for OLED was prepared by Facing Targets Sputtering(FTS) system which can reduce the damage of organic layer. The Al thin films were deposited on the cell (Lif/EML/HTL/Bottom electrode : ITO) for examination the current-voltage properties of OLED with magnetic field distribution between two faced targets. Thickness and current-voltage properties of Al thin films are measured by ${\alpha}-step$ and semiconductor parameter analyzer (HP4156A), respectively.

$SiO_2$ thin films are fabricated using sol-gel method and dipping method. Relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. Tan ${\delta}$ of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.

수평형 에미터 스위치트 사이리스터(Lateral Emitter Switched Thyristor, LEST)의 고전압 전류 포화 특성을 위한 새로운 보호회로가 제안하였으며 성공적으로 제작 및 측정하였다. LEST의 부유(浮遊, floating) n+ 전압이 보호 MOSFET의 문턱 전압 보다 커지면 보호 회로는 LEST의 동작 모드를 regenerative 상태에서 non-regerative 상태로 전환시킨다. 일반적인 LEST의 전압 전류 포화 특성이 17 V로 제한되는 것에 비해 제안된 회로와 결합된 LEST는 200V 이상의 고전압 전류 포화 특성을 보였으며, Hard Switching Fault(HSF) 단락 회로 상황에서도 $10{\mu}s$ 이상 견디는 단락 회로 유지 능력을 보였다.

A high Tc superconducting with a nominal composition of $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{Y}$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h, the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factro in determining whether it is easy to form the high Tc phase or not, because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important fact in determining whether it is easy to form the superconducting phase or not, because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

Photocurrent of a single-crystalline Si nanowire is investigated in this paper. Single-crystalline Si nanowires with amorphous $SiO_2$ shells were first synthesized from ball-milled SiO powders by thermal chemical vapor deposition, and then the amorphous $SiO_2$ shellswere etched out from the as-synthesized Si nanowires. For a single-crystalline Si nanowire, photocurrent-voltage curves taken in air at room temperature were non-linear, and rapid photoresponses were observed when the light was switched on and off. The photocurrent was not changed in intensity under the illumination. Photocurrent mechanism in the single-crystalline Si nanowire is discussed in this paper.

본 논문에서는 역 방향 전하공핍(reverse bias depletion)을 적용한 새로운 구조의 다결정 실리콘 박막 트랜지스터(poly-Si TFT)를 제안한다. 제안된 소자는 kink 전류 억제를 목적으로 counter-doped(p+) 영역이 채널 내로 확장되어 유효채널 폭을 감소시키는 구조이다. 감소된 채널 폭에 의하여 포화 영역의 채널 내 저항이 증가하고, 훌 전류를 통하여 kink 효과가 억제된다. 제작된 새로운 poly-Si TFT는 기존의 소자에 비해 효과적으로 kink 전류를 억제할 수 있음을 실험을 통해 검증하였다.

$Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and ferroelectric properties of the BYT thin films. Increasing the annealing temperature, the peak intensity of (117) increased and c-axis orientation decreased. The BYT thin films crystallized well at $600^{\circ}C$ for 30min. No secondary phases observed in the XRD pattern. At annealing temperature of $700^{\circ}C$, the thin films had no cracks and the grain was uniform. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The remnant polarization of the $Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$ capacitor reached $1.8uC/cm^2$ at an applied field about 400kV/cm. The BYT thin films can be used as capacitors in Ferroelectric Random Access Memory device.

Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation of surge protective device and Earth Leakage Breaker.

VASIMR (Variable Specific Impulse Magnetoplasma Rocket: JSC, NASA)의 개념을 바탕으로 하는 K2H (KBSI-KAIST-Hanyang University)라고 이름 붙여진 우주 추진체 모사장치 (Space Propulsion Simulator)를 개발하였다. 이 장치는 헬리콘 플라즈마 소스, 이온 가열부 (ICRH: Ion Cyclotron Resonance Heating), 자기노즐 부분으로 이루어져 있다. 헬리콘 플라즈마 소스는 m=+1 형태의 Right-helical 안테나를 사용하여 발생하였다. 본 연구에서는 K2H 장치의 기본적인 설계 개념 및 초기에 발생한 헬리콘 플라즈마의 물성을 RF 보상탐침을 이용하여 측정하였다. 그 결과 900 W, 13.56 MHz rf파워를 사용하여, 아르곤 7 mTorr하에서 전자밀도 = $10^{12}-10^{13}cm-3$, 전자온도 = 4-6 eV의 헬리콘 플라즈마를 안정적으로 발생시켰다.

In this study, we build system and techniques of evaluating the interruption performance of the GCB with experimental method. We constructed a simplified synthetic test circuit of which ability is up to 245kV, 50kA BTF test. And We composed a model test circuit breaker with puffer assisted self blasting type GCB. With this circuit breaker, we carried out the experiment of no load and SLF90. During the tests, we measured the several factors such as stroke, pressure, arc temperature, the voltage and current near the current zero and dI/dt, dV/dt. Arc conductivity before 200ns before current zero which is one of the indexes of the thermal recovery of a GCB was measured. With these kinds of measurement, we could estimate the performance of a GCB fundamentally. Futhermore these results were used to adjust the arc modeling with CFD(computational fluid dynamics) and we could increase the plausibility of the analytical method.

This paper presents evaluation of the electrical uniformity of zinc oxide varistors for lightning arresters. Two types of varistors were prepared which are a domestic varistor destroyed in the long duration current impulse withstand test and a new imported varistor. The domestic varistor exhibited good electrical uniformity except destroyed parts, but the imported varistor showed the worse results.

The importance of protecting people from harsh weather conditions cannot be over-emphasized and the way to. do so should be sought vigorously. The most well known and widely used weather protection fabric in the current industry is $Gor-Tex.^1$ However, the Gore-Tex membrane cannot be attached to cotton or other natural fibers so it's use is not suitable for clothing such as underwear. If the exterior of cotton fabric can be made to be hydrophobic without sacrificing the comfort and breathability, the result will be a cotton fabric with the weather protection capability equivalent to Gore-Tex as well as the ability to provide the best wear comfort. However, this should be done without using toxic and expensive gases to be environmentally friendly and cost effective. Therefore, our approach for hydrophobic treatments of fabric and metal surfaces is to utilize a plasma-based technique. In general, plasma processes do not produce chemical wastes or waste disposal problems and they are fully automated.

본 논문에서는 스위칭 아크방전의 유동특성을 분석하기 위해서 유한요소법을 사용하여 전극 사이에 가해지는 전계를 소스원으로 두고 열전달 및 유동 특성을 해석하였다. 그 결과 전계가 높은 곳에서 온도가 높게 나타나고 열선도 집중되는 것을 확인하였으며 전극의 형태에 따라 분포 형태가 변하는 것을 확인할 수 있었다. 이것은 개폐기의 아크 소호를 위한 기술 개발과 접점 개발 시에 기초 자료로 활용이 기대된다.

본 논문에서는 초기화 구간에서의 시간단축과 높은 암실 명암비를 얻을 수 있는 새로운 초기화 파형을 제시한다. 새로운 초기화 파형에서 첫 번째 subfield는 기존의 conventional 구동파형과 마찬가지로 초기화 구간에서 ramp-up구간과 ramp-down구간이 필요하지만, 두 번째 subfield부터는 단지 ramp-up구간만이 적용된다. 한 frame에 8개의 subfield를 적용할 경우, 기존의 구동파형의 배경광이 $0.40cd/m^2$로 측정되는 반면, 새로운 초기화파형을 패널에 적용할 경우 배경광이 측정되지 않는다. 이러하여 우리는 새로운 초기화파형에서 무한대의 암실 명암비를 얻을 수 있다. 또한 새로운 초기화파형에서는 ramp-down구간을 없앰으로써 첫 번째 subfield를 제외하고는 초기화 시간을 165us로 시간을 줄일 수 있다.

AC PDP 의 구동방법 중 ADS구동방법은 구동특성이 안정되고 계조구현을 디지털 방식으로 구현 할 수 있는 둥 다양한 장점으로 인해 현재 많은 상용 AC PDP의 구동법으로 널리 채택되고 있다. 본 논문은 기존의 구동파형의 문제점인 초기화 구간에 할애하는 시간의 증가로 인해 이후 어드레싱 및 유지방전에 필요한 시간이 단축되어 화질의 저하를 나타내는 기존파형의 문제점을 보완할 수 있는 단축된 초기화파형을 가진 새로운 구동파형을 소개 하였다. 본 논문에서 제시한 구동파형의 적용으로 패널의 초기화시 발생되는 배경광으로 인해 암실명암비가 낮아져 화질저하가 나타나는 근본적인 문제 또한 해결할 수 있었다. 새로운 구동파형으로 인해 초기화시 소요되는 시간을 350us에서 150us로 감소시킬 수 있었고, 초기화시 선택되지 않은 화소의 불필요한 약방전을 없앰으로서 무한대에 가까운 암실명암비를 달성할 수 있었다.

열공압 방식으로 동작하는 마이크로 펌프와 밸브가 집적된 (polydimethylsiloxane)PDMS 미 세 유체 시스템을 제작하였다. 본 실험에서 제안한 미세 유체 시스템은 PDMS 마이크로 채널, PDMS membrane, 열공압 챔버, indium tin oxide(ITO) 히터로 구성되어 있다. 마이크로 펌프의 경우 가해주는 펄스 전압의 변화를 통해 유속을 최적화 하였고 마이크로 밸브의 경우 가해주는 직류 전압을 변화시켜 유체의 흐름을 제어할 수 있었다. 미세 유체 시스템의 최적화된 조건은 마이크로 펌프의 경우 duty 4%와 주파수 4Hz에서 최대 pumping rate을 나타냈고 그때의 pumping rate 68nl/min이었다. 마이크로 밸브의 유체를 closing 전력은 450mW이었다.

The problem of lamp life have being solved before electrode-less lamps were developed. But, mercury is using till now. So people are concerned about friendly-environmental lamp, and many researcher hardly study it. In this paper, an ICP lamp which is using Xe gas and Ne gas was designed after optical properties were measured and analyzed. As a result, H-mode properties and penning effect properties were known. Also xenon and neon of properties analyze by spectrum.

The flat panel lamp is used as back light. It is perceived the best type for the wide size LCD of back light system. However, the flat panel lamp has high value of heat. So it need to improve efficiency. Therefore, more researches are requested for the back light of the flat panel lamp. In this paper, the properties of spectrum is investigated according to change in frequency from 30kHz to 60kHz using power supplies voltage with changing from 500V to 700V. As a result, main spectrum peak of plasma showed in 450[nm], 630[nm], 750[nm] and spectrum peak of 750nm is the highest.

Mobile display는 사용자가 이동하면서 화면을 보기 때문에 주변 luminance의 변화에 따라서 contrast ratio 변화가 심하다. 특히 햇빛 아래에서는 Mobile display의 화면을 알아보기 어렵다. 본 연구에서는 주변 조도가 증가할수록 TFT LCD의 black 휘도의 변화율이 white 휘도 변화율보다 크게 작용하여 전체 contrast ratio(이하 CR)가 크게 감소함올 확인하였다. 또한, 반투과형 LCD는 반사창을 통해서 외부 빛올 반사시키기 때문에 주변 조도가 높아도 일정 수준의 CR은 유지할 수 있다. 그러나 투과형 LCD보다 CR이 낮았다. 본 논문에서는 투과형 TFT LCD에 back light 광원으로 LED를 사용하고, photo diode와 LED drive IC를 이용하여 주변 조도의 광량에 따라서 LCD의 back light LED의 휘도를 3단계 조절할 수 있는 회로를 구성하였다. 이렇게 함으로써 주변 조도에 따라 자동으로 back light 휘도 조절이 가능한 결과을 얻었다.

Mn-Co-Ni-O계를 적용한 적층 칩 NTC 써미스터의 소성온도 및 냉각 조건에 따른 전기적 특성을 연구하였다. 특히, 소결조건에 따른 저항, B-정수의 경시 변화 특성으로부터 제품의 신뢰성 측면을 검토하였다. 소결온도 및 시간에 의한 영향보다는 냉각속도에 따른 초기 저항 및 B-정수의 변화가 크게 나타났으며 냉각속도를 조절한 시편에서 경시변화율은 1%이하인 특성을 얻을 수 있었다.

Merocyanine dye (MD) has been extensively investigated due to its marked potential application to photo-electric devices. We fabricated the number of layers to control its optical characteristics using the Langmuir-Blodgett (LB) method. We evaluated the morphology and optical characteristics of MD LB films using Atomic Force Microscopy (AFM) and UV spectroscopy, PL spectroscopy. As a result, we obtained the quantitative morphology and optical characteristics of LB films from controlling the deposided layers.

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

Main purpose of this study is a improved efficiency of Organic light emitting diodes(OLEDs) concerning $UV/O_3$ treatment. We investigated the efficiency of OLEDs by $UV/O_3$ treatment of ITO surface. We measured current density-voltage, luminance-voltage characteristics in different $UV/O_3$ treatment time and observed ITO surface roughness by using AFM(Atomic Force Microscope). The fundamental structure of the OLEDs was $ITO/NPB/Alq_3/LiF/Al$. We performed $UV/O_3$ treatment and found that $UV/O_3$ treatment enhanced the performance of OLEDs. We also found that change of surface roughness according to difference time a $UV/O_3$ treatment

In present, most of metallic structures(gas pipeline, oil pipeline, water pipeline, etc) are running parallel with subway and power line in seoul. Moreover subway system and power line make a stray current due to electrical corrosion on metallic structures. The owner of metallic structures has a burden of responsibility for the protection of corrosion and the prevention against big accident such as gas explosion or soil pollution and so on. So, they have to measure and analyze the data about P/S(Pipe to Soil) potential due to stray current of subway system. So, we have developed the Real-time Wireless Remote Monitoring System for Stray Current of Subway System. In this system, the permanent buried type reference electrode is necessary. In this paper, results of development of buried type reference electrode using porous ceramic$({\alpha}-Al_{2}O_{3})$ are presented.

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of de-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

In the device structure of ITO/tris (8-hydroxyquinoline) aluminum(Alq3)/Al, we investigated the Organic Light-Emitting Diodes (OLEDs) properties as a function of the deposition rate of the $Alq_3$. The deposition rate was from 0.5 to 2.0 $[{\AA}/s]$ in a base pressure of $5{\times}10^{-6}$ [Torr]. It was found that a $Alq_3$ deposition rate of around 1.5 $[{\AA}/s]$ is the optimum for the maximum luminous properties. The optimum deposition rate of $Alq_3$ is 1.5 $[{\AA}/s]$.

In this study, in order to develop Pb-free piezoelectric ceramics, $[Li_{0.04}(Na_{0.44}K_{0.52)-(Nb_{0.86}Ta_{0.10}Sb_{0.04})]O_3$ ceramics were fabricated by conventional mixed oxide method and their piezoelectric characteristics were investigated according to the poling condition. The transition temperature from orthorhombic phase to tetragonal phase observed at $93[^{\circ}C]$ and Curie temperature was $346[^{\circ}C]$. At $50[^{\circ}C]$ poling temperature, dielectric constant, electromecha nical coupling factor kp, piezoelectric $d_{33}$ const ant, coercive field Ec, remanant polarization Pr and mechanical quality factor Qm showed the optimum value of 737, 0.45, 209[pC/N], 1l.34[kV/cm], $7.14[{\mu}C/cm^2]$ and 205, respectively.

Several sensors are involved in the cor개sion monitoring of concrete structures. This paper deals with the monitoring of concrete structures by embeddable reference sensors. $MnO_2$, MMO and graphite reference sensors are fabricated in the laboratory as suitable as embeddable type into the concrete structures. Sensors are embedded into the mortars and the performance was studied in the absence and presence of chloride ions. The electrochemical stability of the sensors was carried out for the exposure period of one year. Polarisation behaviour and impedance of the sensors in mortar was carried out in three aqueous solutions namely distilled water, 3% NaCl and natural sea water.

In this paper, the design and characteristics of a ${\pi}-shaped$ ultrasonic motor which is applicable to optical zoom operation of lenssystem for mobile phone are investigated. Its desi후 and simulation of performances are carried out by FEM (finite element method) commercial software. As a simulation result, by applying voltage with single phase, a combined vibration is produced at the surface of an arm of stator. The prototype of motor is fabricated and its outer size is 8*4*2 $mm^3$ including the cylindrical steel rod of 2 mm in diameter as rotor. The motor exhibits a maximum speed of 500 rpm and a power consumption of 0.3 W when driven at 20 Vpp and 64 kHz.

In this paper, disk-type ultrasonic motor using a combination of radial and bending vibration modes is newly designed and fabricated. The characteristics of the test motor are also measured. By means of traveling elastic wave induced at the surface of circumference of the elastic disk, a steel bar in contact with the surface of circumferenceof elastic disk bonded onto the piezoelectric ceramic disks is driven in both directions by changing the sine and cosine voltage inputs. The stator of the motor is composed of two sheets of piezoelectric ceramic disk to bond onto both surfaces of a elastic disk, respectively. As the results, the diameter of elastic body is increased, the resonant frequency is decreased. The resonant frequency of the stator is about 92 kHz, which is composed with piezoelectric ceramic disks of 28 mm in diameter and 2 mm in thickness, and an elastic body of 32 mm in diameter and 2 mm in thickness. A driving voltage of 20 Vpp produces 200 rpm with a torque of 1Nm and an efficiency of about 10 %.

a-Si TFT는 TFT-LCD의 화소 스위칭(swiching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압의 이동이다. 펄스(pulse)형태로 인가되는 gate 전압에 의한 문턱 전압 이동은 a-Si:H gate에 인가되는 펄스의 크기, duty cycle, drain pulse의 크기 및 동작 온도에 기인하며 실험결과를 통해 입증된다. 초기의 DC Stress 측정 Data를 이용하여 문턱전압이동을 모델링/시뮬레이션한 결과 a-Si:H gate 회로설계 및 펄스 조건에 따라 stress시간에 따른 gate의 출력 파형 예측이 가능하고 상온에서 Von=21V를 인가한 결과, 약 4년후에서 시프트레지스터 출력 파형이 열화되기 시작한다.

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_{3}O_{12}(BNdT)$ thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying deposition temperatures. Increasing deposition temperature, the (117) peak was increased. An increase of columnar and recrystalline structure of BNdT films with increasing deposition temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with deposition temperature of $600^{\circ}C$ were 319 and 0.05, respectively.

현재 액정 표시장치는 액정의 유전율 이방성 특성에 따라 Positive LC 와 Negative LC로 구분되어 개발 된다. Positive LC에는 TN(Twisted Nematic)모드와 IP(In Plane Switching) 모드가 있다. Negative LC에는 VA(Vertical alignment) 모드가 있다. 데이타 전압을 교류구동 시키므로, LCD Pixel들은 극성반전을 하게 되며, 이때 특정 Pattern에서 화면상에 비정상적인 색깔이 나타난다. 특정 Pattern이란 데이타 전압이 교류구동을 할 때, Vcom Level이 데이타 전압에 의한 Coupling 때문에 왜곡이 발생되고, 이 왜곡에 의하여 레드, 그린, 블루 Pixel의 충전을 차가 발생해서, 화면의 좌우는 적색편향 하게 보이고, 중앙은 녹색편향 발생된다.

본 논문은 대면적 LCD 기판에서의 hillock 의 특성 및 억제 방법을 제안한다. pure-Al 의 thickness 에 따른 hillock의 발생개수는 감소 하며 size는 증가하는 경향을 나타낸다. 이는 pure-Al 의 grain size가 thickness에 따라 증가하며 즉 grain size가 커질 수 록 발생 hillock의 size는 증가 한다는 것을 알 수 있다. hillock 억제 방안으로 Mo capping을 제안 하며 이에 대한 Modeling 및 효과 파악 결과 pure-Al $2500{\AA}$에 Mo $500{\AA}$ capping시 pure-Al의 hillock을 억제 한다는 신뢰성 있는 결과를 얻을 수 있었다 이에 대한 이론적 Modeling은 Chaudhari's Model을 modify하여 사용 하였다. 그 외 sputter온도에 따라 hillock 발생 개수가 증가 함을 관찰 하였다.

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

This study has investigated the effects of the etching method of a Ti substrate for a metal oxide electrode on the electrochemical characteristics of the electrode. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrode was tested for Ru, Zr, Sn oxide on the Ti substrate using SEM, XRD, Cyclic voltammetry.

A series of inorganic-organic hybrid membranes were prepared with a systematic variation of titanium dioxidenanoparticles content. Their liquid uptake, methanol permeability and proton conductivity as a function of inoranic oxide content were investigated. The results obtained show that the inorganic oxide network decreases the proton conductivity and liquid uptake. It is also found that increase in inorganic oxide content leads to decrease of methanol permeability. In terms of the morphology, membranes are homogeneous and exhibit a good adhesion between inorganic domains and the polymer matrix. The properties of the composite membranes are compared with the standard nafion membrane.

As Plasma Immersion ion Implantation (PIII) using a conducting grid is very useful to reduce the effect of capacitance and charging in surface modification. If the bias voltage applied to the conducting grid is in the range of hundreds of volts, the effects of surface charge and space charge substantially affect the incident ion energy and ion current to the surface. In this paper, through an 1d and a 2d PIC simulation the time varying formation of the space charge and surface charge is analyzed. Experiment with the optimally designed grid on the basis of the simulation results is conducted, and the results of both cases with grid and without grid are compared. In our work with Poly Urethane(PU), the improvement of adhesion is yielded by increasing surface roughness and decreasing Si component of PU.

To improvement the performance of PDPs, we developed an ac-PDP with new fence structure. By measuring minimum sustaining voltage(Vs), discharge current(Ion), discharge(Ioff), and brightness of the light from a 4-inch at-PDP, performances of the conventional structure and proposed structure are compared. The experimental results show that the test panel with the proposed new fence structure shows high luminance by 10%, and high luminous efficiency by 30% compared with the conventional structure at the Ne-Xe(8%) gas mixture of 400 torr.

Although intensive experiments have been performed to investigate the origin of boundary image sticking, one of major factors to determine display quality in AC PDP, it has not being reported clearly why it is occurred. The relationships between boundary image sticking and its possible origins such as phosphor degradation, temporal change of MgO layer, wall charge have been discussed. In this paper, we have analyzed characteristics of the boundary image sticking more clearly by the influence of local panel temperature.

Ultra wide band electromagnetic energy can be transmitted to a far field by emitting the nanoseconds high voltage pulse electromagnetic energy via an antenna. This UWB EM energy is expected to be used in post-packing pasteurization of food, detection of buried objects or underground water veins and caves and the treatment of waste water or polluted gas. The nanoseconds pulse forming for UWB generation using high voltage blumlein line and an ultrafast switch is mentioned.

This article describes an estimate method of the spark plug gap by measuring breakdown voltage. Breakdown voltage is the function of spark plug gap, pressure, temperature and humidify. However. It is dominated mainly by the spark plug gap. This technique is applied to in-line process test of the spark plug gap in automobile engine production. Breakdown voltage of normal spark plugs slightly scatters in ordinary conditions and if there is dust or burr in the gap, breakdown voltage gets lower. This technique saves repairing time for bad spark plug and attributes to improve the quality of automobile engine.

The PAL (Pohang Accelerator Laboratory) is persuading to construct a SASE-XFEL facility (PAL XFEL) that supplies coherent X-rays. The bright and stable electron beam is essential for the PAL XEL. The electron beams has to have an emittance of 1.0 mm-mrad, a peak current of 3 kA, and a low energy spread of 1.0 MeV. In order to provide reasonably stable SASE output, the RF stability of 0.02% rms is required for both RF phase and amplitude. This is a technologically challenging issue for PAL XFEL. An inverter technology is to be applied to charge the PFN of a new modulator. Therefore, a new inverter system should provide very stable charging performances. This paper presents the development of an ultra stable klystron-modulator with an inverter power supply.

To detect partial discharge of 154kV joint box, we have made experiment by using the HFCT sensor. Generally the signals which are detected in partial discharge test of underground power transmission cable are accompanied with both noises of high voltage and noises of surrounding power cable. The most noise in near to end part of joint box is corona, beside other noises flowed from surrounding area. Partial discharge test is difficulty due to these noises. First, we test reliability on both injection of calibration signal in NJB and removal of low frequency. After that, we had analyzed frequencies by measuring signals in IJB with 300[m] distance from NJB. Also we had measured S/N ratio by using the indirected injection method of calibration signal in IJB. In this experiment, two measurement methods were difference of detection acquisition, but these had the equal frequency properties.

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

An external electrode fluorescent lamps (EEFLs) have the advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Studies on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, an EEFL presented the possibility of using it as a light source for backlights. However, because an EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verifies the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examines the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

The carbon film was deposited by the electrolysis of methanol solution. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by electrolysis of methanol was identified as the hydrogenated carbon film with porous structure.