A simple method for analysis of serial search burst-format direct-sequence spread-spectrum (DS-SS) code acquisition system had been recently proposed, and therein, the effect of the code autocorrelation sidelobes on the performance of DS-SS code acquisition system has been assessed [4],[5]. In this paper, a new hybrid scheme which combines the serial search with maximum likelihood search is proposed to eliminate the deleterious effect of code autocorrelation sidelobes, and the performance is analyzed for the additive withe Gaussian noise (AWGN) channels. To analyze the performance of this system, we have generalized the method used in [4],[5] to arbitrary burst-format DS-SS acquisition schemes. The results show that a new hybrid scheme has good immunity against the effect of code autocorrelation sidelobes. Thevalidity of the presented approach has been confirmed form the results of simulation.

In this paper the electric and magnetic field distributions in a TEM cell used for EMC testing are analyzed numerically. The fields are distorted with the increase of frequency. These distortions are due to higher order modes and resonances and cause the bandwidthe limitations in the uae of TEM cels. The upper frequency is lower modes however, are reflected at some points through the tapered ends of the cell. Higher order modes however, are reflected at some points within the tapered region where it becomes too small to support the modes, The first two TE mode(TE$_{01}$ and TE$_{10}$) cutoff frequencies and the first six TE$_mnp$ resonant ferquencies are identified in a TEM cell (1x0 6x2m,w=0.72m) from field patterns and the results are consistent with others' data. The circumferential wall currents to support resonances are shown. For the large cell it is desired to extend the usable frequency range above the cutoff frequency of the first higher order mode. This study proposes an attempt to expand the frequency bandwidth by a resonance suppression.

The effect of air gap between specimen and jig on the material constant (permittivity, permeability) and attenuation characteristics of electromagnetic wave absorbers in the coaxial line method was investigated. The presence of a air gap made both permittivity and permeability measured lower than true value, and the tendency was greater in the case of permittivity. An inner gap compared to an outer gop was found to yield a larger difference between measured and true values. The effect of air gap was measured for a Ni0.3Zn0.7Fe2O4, with the gap eliminated by metallizing with Ag-paste. The measured characteristics were in good agreement with corrected values by calculation.

Multi-layered chip inductors were prepared with good magnetic properties by sintering Ni-Zn-Cu ferrites at a lower temperature. A slurry with 49.5mol%Fe$_{2}O_{3}$, 20.5mol% ZnO, 20mol% NiO and 10nol% CuO was cast into tapes with 60-100\ulcorner of thickness with a doctor blade techniques. The tapes were screen-pronted with 100% silver electrodes, layered and pressed at 250kg/cm$^{2}$ and then sintered ant 900$^{\circ}C$ for 2h. Inductance with internal electrodes printed 5, 10, and 15 turns showed 4.9, 15 and 24$\mu$, respectively, at 1MHz.

To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF$_2$ on the formation of Ti-silicide were investigated with RTA temperature and dopant concentration. The intermediate phase C49 TiSi$_2$ appeared at $650^{\circ}C$ and the stable phase C54 TiSi2 was formed at $700^{\circ}C$. And the formation of Ti-silicide was hindered by BF$_2$ doping and this trend was decreased with increasing temperature. The out-diffusion phenomena of BF$_2$ into Ti silicide were not observed. And significantly, the native oxide was a chief factor preventing the formation of Ti-silicides.

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

This paper describes the improvement of frequency characteristic of crystal oscillator I.C using Ti-Salicide. The characteristics of transistor(drive current) using Ti-Salicide process are better than Poly-Si process, because the mobility. To know frequency characteristic of oscillator I.C, the simulation is performed using inverter buffer chain of Fan-out 10 TTL. Its result shows at once the generation of normal clock pulse in input signal and the improvement of rising and falling time.

This research paper presents an ALU unit using 1.0$\mu$m CMOS technology capable of doing IEEE standard single and double precision floating poing calculation within 32ns (2 clock) at 60 MHz clock speed. This 32ns speed was achieved by using 9ns 1's complement arithmetic 54 bit carry select adder instead of previous 2's complement adders. On the first cycle, this adder is used for addition or subtraction and the second cycle uses this adder for rounding. This reduces the number of required adders from two to one. Speed improvement is 2 to 5 times compared with previous 40MHz design. Design goal was 60MHz, however, this unit is functioning at 80 MHz at room temperature.