This paper discusses the self-adaptive equalization technique which has adaptibility to channel characteristics varation without training sequence. The criterion function used in this paper is based on the concept of cumulant matching. This function can be applied to nonminimum phase channel, and we can verify the fact that if the constrained condition is satisfied. this criterion has no local optimum. As the adaption algorithm, the normalized gradient-searching technique is used. Simulations verify the performance of our method in case of 8PAM, 8PSK(CCITT V.27), 16QAM(CCITT V.29) sources and three type nonminimum phase channels.

In this paper, the differential detection technique of multi-h CPM is introduced and described. We derived the sets of modulation index of multi-h phase codes adequate to the differential detection. The power spectra of multi-h signals with various sets of modulation index are presented and compared to those of MSK and QPSK. Error rate performances of the conventional detector and Viterbi algorithm detector of 2-h and 3-h CPM are evaluated and compared.

In this paper, the performance evaluation of coded 8PSK TCM system is presented which is evaluated on the basis of the software simulator developed by Monte-Carlo simulation method. The Gaussian noise as well as Gaussian/Impulsive noise are used for the system channel. The required basic concepts for developing a S/W simulator applicable to TCM system are presented and the decoding memory length cosidered as optimal is determined.

In UHF, VHF new design method of samll-sized 3-dB 0$^{\circ}$/180$^{\circ}$ ring hybrid terminated arbitrary impedance using both lumped elements and distributed elements is presented. At the center frequency of 900 MHz, 3-dB 0$^{\circ}$/180$^{\circ}$ ring hybrid terminated arbitrary impedance is designed, analyzed and tested. Good agreements are obtained between measured and theoretical modeling results, and at the same time, the circuit area of hybrid fabricated with two dimensional parallel coupled line, distributed elements and lumped elements is reduced by more than 70% compared with only distribyted-type circuits.

In this paper, We designed a 2-stage amplifier for transponder of satellite with dual GaAs FETs NE13783, and performed the worst-case analysis for circuit qualification in the space environment. The bandwidth of amplifier was chosen 11.7-12.2 GHz which is the down link frequency band for domestic Ku-band satellite communication, and the alumina substrate with 25 mil of thickness. The design and optimization of amplifier was achieved by the commercial CAD program TOUCHSTONE and the measurement was performed through the automatic network analyzer.

In this paper we report how to design integrated-mirror etalons for surface-emitting lasers and photonic switching without time-consuming numerical calculation. It consists of the following two-step process (step 1) find the minimum reflectance to achieve the maximum allowable linewidth. (step 2) find the number of the quarter-wave layers in each mirror to realize the reflectance given by step 1. The condition for maximum transmission in an integrated- mirror etalon is also derived. Under this condition we can achieve the required linewidth with the minimum number of quarterwave layers.

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

We fabricated highly stable a-Si:H solar cell using low band gap intrinsic layer fabricated by RP-CVD. We obtained a-Si:H with optical band gap of less than 1.65 eV with deposition rate of 0.18 $\AA$/sec, and used this material as bottom i-layer of a-Si:H double stacked solar cells. We have succeeded in the fabrication of very stable a-Si:H double stacked solar cell of which the conversion efficiency is about 9% and the degradation is less than 4% after light illumination for 100h under 350mW/cm$^{2}$.

The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

The cause of excess current noise which appears some times in RuO$_2$ thick film chip resistors and the process to reduce such noise are investigated. We observed that too large thermal expansion coefficients of resistor paste and electrode metal paste can induce the mechanical stress and microcracks in the contact region of the two sintered materials. Such microcracks result in the reduction of conduction paths in the sintered electrode and this provokes the increase of the resistance value and the current noise. Such excessive current noise induced by microcracks could be reduced or even eliminated by using an enlarged overcoat patterns in the plating process or by adding an additional annealing process before plating.

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

The use of fixed-point digital signal processors, such as the TMS 320C25, requires scaling of data at each arithmetic step to prevent overflows while keeping the accuracy. A software which automatizes this process is developed for TMS 320C25. The programmers use a model of a hypothetical floating-point digital signal processor and a floating-point format for data representation. However, the program and data are automatically translated to a fixed-point version by this software. Thus, the execution speed is not sacrificed. A fixed-point variable has a unique binary-point location, which is dependent on the range of the variable. The range is estimated from the floating-point simulation. The number of shifts needed for arithmetic or data transfer step is determined by the binary-points of the variables associated with the operation. A fixed-point code generator is also developed by using the proposed automatic scaling software. This code generator produces floating-point assembly programs from the specifiations of FIR, IIR, and adaptive transversal filters, then floating-point programs are transformed to fixed-point versions by the automatic scaling software.