Through the low orbit GPS satellite for a 3-dimensional real time position detechtion can be achieved anywhere. Utilizing the GPS sate llite detection values an analysis of the varing characteristics of the ionosphere can be achieved, and by calculating the correlation relationship of the position detection error and the ionospheric time delay characteristics, an advanced algorithm technique can be developed. Computer simulation of the developed algorithm for defining the corelation between the position detection error and the varing ionospheric time delay charcteristics has been proceeded. The results of simulation reveal the fact that the varing characteristics of the ionosphere nearly match the actual ionospheric time delay characteristics.

In this paper, a priority schedling and a flow control algorithm with hysteresis effect are proposed for high-speed networks. A mathematical model for the flow control is proposed and a cell transition probability from this model is found. And the performance of the proposed algorithm is analyzed by a computer simulation. According to the simulation results, it can be shown that the priority scheduling and the flow control with hysteresis effect get the cell loss probability 0.061 better and the average delay 100ms better and the average delay 100ms beter than those of single threshold.

Previously. TCM decoder has been using the Viterbi algorithm that was complex. In order to reduce the complexity of decoder. we proposed the “modified decoding algorithm using the path back method” and the modified decoding algorithm which extends the previous decoding algorithm to be able to applied to TCM decoder in this paper. On the gaussian and impulsive noise channel. Monte-Carlo simulation is used for analyzing the TCM performance and proving the efficiency of proposed decoding algorithm.

In this paper, the performance of the trellis coded CPFSK with the coherent detection over mobile communication channels is calculated. The characteristics of channels, including phase jitter effects and fading effects, are examined and modeled. The phase jitter channel is modeled to have a nonzero mean and a gaussian distribution. The fading channel has a Rayleigh distribution in the multipath. For the optimal decoding method(MLSE), the Viterbi algorithm is used for the trellis structure of trellis coded CPFSK. The results indicate that the trellis coded CPFSK with a small moulation indes gets more sensitive, as the index gets smaller, to the phase noise under the phase jitter channel. Using the interleaving method. It gives considerable improvements in the error rate under the fading channel.

The unequal symbol error probability of TCM(trellis coded modulation) is analyzed and applied to the derivation of bit error probability of /RS/Trellis concatenated coded-modulation system. An upper bound of the symbol error probability of TCM concatenated with RS code is obtained by exploiting the unequal symbol error probability of TCM, and it is applied to the derivation of the upper bound of the bit error probability of the RS/Trellis concatenated coded-modulation system. Our upper bounds of the concatenated codes are tighter than the earlier established other upper bounds.

When a constructed multimedia application system transfers a various media of which quality of service is different, a previously constituted synchronization at source site generates the synchronization anomaly that the synchronization relation is broken by a delay or a data loss at destination. To solve the synchronization anomaly, we propose the “Multimedia synchronization scenario method : MSSM” which defines as one(1) event all objects generated at multimedia application and creates the optimal scenario of multimedia presentation under temporal constraints. The characteristics of MSSM can minimize the delay effect, guarantee the media stream continuity for preventing the media stretch, and provide the synchronization information to a user and/or a system. After deciding a synchronization possibility. MSSM confirm user its information. If there is a synchronization possibility. MSSM products optimal multimedia presentation scenario, and can present multimedia adaptively.

In indoor radio systems, vehicular communication systems, and land mobile systems, a very important problem is that of maintaining stable communications at all locations. Therefore solutions for the indoor propagation problem are important aspects of the mobile communication system. leaky coxial cables are finding increasing use in communications systesm involving mines, tunnels, tailroads, and highways, and in new obstacle detection, or guided radar, schemes for ground transportation and perimenter surveilance. In this paper a leaky coaxial cable having periodic slots in the outer conductor is described to obtain the propagation modes in the various environments. We use aneccentric cylindrical model to develop the theory for surface-wave propagation on the cable. Numerical Results are also included for the propagation constants, field distribution and current distribution. First, we derive the electromagnetic equation for leaky coaxial cable having symmetrical periodic slots using mode-matching method and Floquet's theorem, and then find various modes, propagation constants, field distribution, etc.

In this study, optimizing BPOFs are encoded by Simulated Annealing algorithm that is widely used among the optimization algorithms. Two BPOFs are trained by digit patterns, 0~9, and the digits each having 4 intraclass patterns are multiplexed. When each digit is encoded by four bit binary code, from the results of computer simulation, the correlation pezk is shown at binary value 1 position among the spatially separated four positions at the correlation plane And then, the designed BPOFs are implemented by CGH technique. Through the optical correlation experiment, satisactory results are achieved, inspite of some experimental errors and information loss owing to the amplitude type CGH filter.

GaAs MISFETs, with photo-CVD grown P$_{3}$N$_{5}$ gate insulator and sulfide treatment, have been fabricated and showed the instability of drain current reduced less than 22 percent for the period of 1.0s~1.0${\times}10^{4}s$. The effective electron mobility and extrinsic transconductance of the device are about 1300cm$^{2}$/V.sec and 1.33mS at room temperature. The C-V characteristics of GaAs MIS Diode and AES analysis are also discussed with respect to effect of sulfide treatment conditions.

The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

In 1.55.mu.m DFB lasers with two non-AR mirrors, I have analyzed the effect of the sturctures of indes and/or gain gratings and mirror positions on the threshold gains, the lasing frequencies, and the beam profiles in longitudinal direction of lasers. I have obtained the optimum condition of static characteristics that ${\Delta}{\Omega}$(the phase difference betweeen index grating and gain grating is 3${\pi}$/4, $({\kappa}L)_{i}$=4~6 in case of $({\kappa}L)_{i}$=0.9 and $({\kappa}L)_{i}$=3~5 in case of $({\kappa}L)_{i}$=0.7. The modal selectivity and intensity uniformity of this optimum condition are 2~2.5 times better than those of the gain-coupled DFB lasers ${\Delta}{\Omega}$=0). The gain-coupled DFB lasers${\Delta}{\Omega}$=0) have 10$^{10) times better modal selectivity and intensity uniformity than the loss-coupled DFB lasers(TEX>${\Delta}{\Omega}$=${\pi}$).

InGaAsP/InP PBH-DFB-LD emitting at 1.55${\mu}$m wavelength has been fabricated for 2.5Gbps optical fiber communcations. For fabrication of PBH-DFB-LD, Interference expose for grating formation 3-step LPE epitaxial growth were used. Fabricated PBH-DFB-LD operates in single longitudinal mode with larger than 35dB SMSR and wider than 3dB bandwidth of 3GHz. A 8${\mu}$m mesa structure was introduced by channel etching to reuce parasitic capacitance. To reduce pad capacitance, we designed a small electrode. 0.27mW/mA in the case of spectrum shows single logitudinal mode operation with larger thatn 30dB SMSR measured at 5mW.

In this paper, we desribe a new system, called BEST, that is used to develop a macromodel or behavioral model easily. It automatically calculates the component values of macromodel represented by equations to satisfy the given specification. Also, it gives the way to analyze both the behavioral model and transistor level circuit, and then compare the analysis results of them to check the correspondence under specific temperature and bias condition, and BEST optimizes the component values of macromodel. Other feature is to characterize MOSFET as switch model which consists of PWL-RC network. Finally, it is possible to generage multi-level netlist which consists of macro/switch/transistor level circuits, and user can determine the trade-off between simulation speed and accuracy. With the graphic user interface form of macromodel development system described above. BEST enable designers to make macromodel by themselves and to uas it. We applied BEST to develop the macromodel for the test circuit and got the 18.6 times simulation speed up with preserving the accuracy within 10% compared to the conventional transistor level circuit simulation. Also, applicability of optimization capability was verified.

A new circuit simulator for submicron MOS desings was developed by enhancing SPICE3. The minimum conductance stepping, source stepping and pseudo transient methods are applied to improve the convergence. and SECSPICE uses the variation rate of the node volgage in the timestep algorithm. The modified BSIM model was implemented in SECSPICE for submicron MOS designs. And it gives the powerful user environments such as graphic user environments. As the results of test using real measured device data and circuits used in real production desing, we found it gave more accurage results than BSIM and the execution speed was 1.5~2.8 times faster than SPICE3.