The problem of amplitude-and frequency-modulated waveforms is analyzed when a linearly polarized electromagnetic wave is scattered by a slowly rotating rotor with metal plates. ECM in conjunction with a quasi-stationary method is used to analyze the modulated waveforms. The modulated waveforms depend on the orientation and dimension of the object. its rotation speed, and very strongly on the incident and scattering directions. The modulate waveforms of a rotating non-skewed metal plate and a rotor with two blades are functions of twice the rotating frequency of those. Similar results are discussed for a rotating skewed metal plate, but the modulated waveforms is a function of the rotating frequency. Numerical results based on our ECM are presented and compared with those of Sikta's and PO solution.

In this paper, an ultrasonic phased array transducer with spherical liquid lens, which utilizes both electronic focusing by linear phased array and variable geometric focusing by spherical lens. is investigated. This system reduces the elevational beamwidth which is disadvantage of the 1-dimensional linear phased array, and adds real-time dynamic focusing capability by controlling the volume of liquid in the lens. A prototype of this transducer is constructed and tested. The experimental results are compared with those of computer simulations. The range of applications are in the hyperthermia applicators or ultrasonic image system with narrow beam and rapid scanning characterisitcs.

In this paper, we developed a two-dimensional numerical simulator which could analyze the stripe geometry semiconductor laser diodes by modifying the commercial semiconductor device simulator, MEDICI. In order to study the characteristics of semiconductor laser diodes, it is necessary to solve the Helmholtz wave equation and photon rate equation in addition to the basic semiconductor equations. Also the recombination rates due to the spontaneous and the stimulated emissions should be included, which are very important recombination mechanisms in semiconductor laser diodes. Therefore, we included the solution routines which analyzed the Helmholtz wave equation and the photon rate equation and two important recombination rates to simulate the semiconductor laser diodes. Then we simulated the gain-guiding and index-guiding DH(Double Heterostructure) semiconductor laser diodes to verify the validity of the implemented functions. The results obtained from simulation are well consistent with the previously published ones. This allows us to know the operating characteristics of DH laser diodes and is expected to use as a tool for optimum design.

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

Homogeneous, compositionally graded, and superlattice-like silicon oxynitride(SiON) dielectric layers, with the refractive index varying from 1.46 to 2.05 as a function of film thickness, were grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. An antireflection(AR) coating and thin-film electroluminescent(TFEL) devices with multiple dielectrics were designed and fabricated using real time control of reactant gases of the PECVD system.

We developed a two-dimensional numerical simulator which can analyze the electrical as well as optical characteristics and evaluate the detection performances of self-signal processing infrared detectors. It solves the poisson equation and the electron, hole current continuity equations including the optical generation and recombination models. To speed up convergency rate. the Newton algorithm is used. Automatic triangular grid generator make it easy to simulate the devices with the various read-out geometries. This simulator can show the variation of spatial resolution which is caused by the transit velocity and transit time dispersion in bifurcate and horn geometries respectively. Also, we calculated the responsivity, noise, and detectivity in respect of the applied electric field and background field-of-view. The results obtained from simulation correspond to those of experiments, and it is verified that horn read-out geometry has the superior spatial resolution and detection performance to bifurcate geometry.

A novel programming architecture for antifuse FPGA(Field Programmable Gate Array) is described. This architecture prevents programming transistors from breakdown which occurs due to high voltage across the transistors during antifuse programming. Extra mask and processes can be avoided using this proposed architecture. To reduce the applied voltage across the terminals of programming transistors, different voltage ranges are supplied to vertical and horizontal tracks; between programming voltage Vp and Vp/2 for vertical tracks and between Vp/2 and 0V for horizontal tracks. Therefore, Maximum voltage across the programming transistors is half of the programming voltage and an designated antifuse can be programmed by applying maximum voltage for vertical track and minimum voltage for horizontal track while others are subjected to voltage difference below Vp/2.

Based on the popular 4-transistor SRAM cell, an analytical expression of the minimum cell ratio was derived by modeling the static read operation. By analyzing the relatively simple expression for the minimum cell ratio, which was derived assuming the ideal transistor characteristics, effects of the changes in supply voltage and process parameters on the minimum cell ratio was predicted, and the minimum power supply voltage for read operation was determined. The results were verified by simulations utilizing the suggested simulation method, which is suitable for monitoring the lower limit of supply voltage for proper cell operation. From the analysis, it was shown that the worst condition for cell operation is low temperature and low supply voltage, and that the operation margin can be effectively improved by reducing the threshold voltage of the cell transistors.

In this paper, an epi layer and a device structure for InP/InGaAs p-i-n/HBT OEIC is designed for a receiving frontend of high speed optical communications. A 3 stage transimpedance circuit using the p-i-n/HBT device is also designed by SPICE simulations for a high sensitivity including ISI noises at a given bit rate. Our simulations show that the Personick's assumption which is not commonly satisfied have estimated a photoreceiver sensitivity too high, so thus we have to also consider ISI noises in OCIC receiver designs.

An optical transmitter was designed and implemented using a commercially available LiNbO$_{3}$ Mach-Zehnder modulator and the power amplifiers. We have adopted a new method to stabilize the bias voltage of the modulator using the second order harmonic component of the dithering signal. This technique has been applied successfully to the 2.5 Gbit/s external modulator for more than 6 hours without bit error rate degradaton. We demonstrated a repeaterless transmission of a 2.5 Gbit/s signal over 150 km nondispersion-shifted fiber using the transmitter. The receiver sensitivity was -34.5 dBm at 10$_{-10}$ bit error rate. No appreciable BER degradation due to fiber dispersion were observed after transmission.

In this paper, we present a new multi-level logic synthesis method for producing the multi-level circuits which can be easily tested by the pseudoexhaustive testing techniques. The method consists of four stages. In the first stage, it generates the minimum variable supports for each output of a multiple-output function. In the second stage, it removes the minimum variable supports which if used to implement the outputs, lead to inefficient pseudoexhaustive test. In the third stage, it determines the minimum variable support and logic (uncomplementary or complementary logic) for each output. In the fourth stage, it performs the multi-level logic synthesis so that each output. In the fourth stage, it performs the multi-level logic synthesis so that each output has the minimum variable support and logic determined in the third stage. To evaluate the performance and quality of the proposed method, we have experimented on the 56 benchmark examples. The results show that for 56 examples, our method obtains better results than MIS in terms of testability. Moreover, the method produces better results for 19 examples and the same results for 12 examples compared with MIS in terms of literal count although it has been developed to improve the testability.