We have developed the active matrix OLED displays with a high efficiency red emission material which uses an emitting assist (EA) dopant system. The EA dopant (rubrene) did not itself emit but assisted the energy transfer from the host ($Alq_s$) to the red emitting dopant(DCM2). A stable red emission (chromaticity coordinates: x=0.64, y=0.36) was obtained in this cell within the luminance range of 100 - 4000 $cd/m^2$ By using EA dopant system, we can realize the reduction of the power consumption of the OLED display..

Samsung SDI has developed a full color 5.0" WVGA AMOLED display with top emission and a super fine pitch of 0.1365mm(l86ppi), the world's highest resolution OLED display ever reported to date. Scan driver circuits and demux circuit were integrated into the display panel, using low temperature poly-Si TFT CMOS technology, and data driver circuit were mounted using COG chips. Peak luminescence was greater than 300cd/ $m^2$ with power consumption of 500mW with 30% of the pixels on illuminated.

A silicon based OELD driving circuit that has a new type of column driving method is proposed to reduce the driving circuit area. In comparison with the conventional method, latches in each column are removed and one DAC (digital-to-analog converter) drives several column lines. To make the DAC operate during a specific period for the low power consumption, a simple DESG (DAC Enable Signal Generator) circuit was devised and confirmed by the simulation.

Pentacene OTFTs of $Al_2O_3$ insulator treated with a diluted PMMA were fabricated for the application of the low voltage operation and large area displays. The operation voltage of 15 V and the mobility of 0.35 $cm^2/Vsec$ are obtained even adopting the thick dielectric of 100 nm which was deposited by atomic layer deposition at the temperature of $150^{\circ}C$. The current on-off ratio was $4.1{\times}10^4$ for the OTFTs treated with 9:1 PMMA and good saturation characteristics were obtained as drain voltage increases.

The understanding of the mechanism of device degradation has been accomplished recently, for devices using $AlQ_3$ electron transport and emitter molecule. In this presentation the experimental evidence for the degradation mechanism of $AlQ_3$ based devices will be reviewed, showing that the hypothesis of an unstable $AlQ_3^+$ cation explains a large amount of experimental data. This hypothesis, however, explains not only the room temperature device degradation in time but also sheds light on temperature stability of OLEDs. Dependence of half-life of a series of devices with an emitter layer composed of a mixture of $AlQ_3$ and different hole transport molecules (mixed emitter layer) will be discussed when they are operated at elevated temperatures. These results can also be explained in the framework of an unstable $AlQ_3^+$ species. An OLED structure containing a doped mixed emitter layer will be described, which shows extraordinary stability, half-life of 1200 hours at operating temperature of 70 C and initial luminance of 1650 $cd/m^2$. We will also discuss a novel Black $Cathode^{TM}$ OLED with reduced optical reflectivity, which is also stable at elevated temperatures. The new cathode utilizes a conductive light-absorbing layer made of a mixture of metals and organic materials.

The device characteristics and the interface electronic structures of organic light-emitting devices based on /tris-(8-hydroxyquinoline)aluminum ($Alq_3$) were investigated with Al/NaF cathode. The Al/NaF cathode greatly improved the performance of the device over the Al-only cathode. A series of photoelectron spectroscopy studies on cathode structures including Al/LiF and $Al/CaF_2$ revealed that the performance enhancement originated mainly from the HOMO peak shift upon the fluoride deposition rather than the formation of the gap states

We have investigated the electrical characteristics of the organic light emitting diodes (OLEDs) using the numerical device simulation. The current-voltage characteristics, the charge carrier concentrations, and the recombination rate profiles are presented. The simulation results of the effects of the various device parameters on the device characteristics are discussed.

Nonlinear parameterization of OLED device from measurements of bias dependence of impedance spectra and parameter extraction using Levenberg-Marquardt complex nonlinear least square regression algorithm based on resistor-capacitor equivalent circuit model enables computer simulation of OLED power driving characteristics in forms of square-wave or sinusoidal output signal at arbitrary conditions. We introduce developed OLED power driving simulation software and discuss transient responses in voltage-or current-controlled operations as well as nonlinear characteristics of OLED, by presenting both the simulation and experimental results. This OLED simulation technique using impedance spectroscopy is extremely useful in predicting performance of the nonlinear device, especially in time-domain analysis of device operation.

Low temperature polysilicon (LTPS) TFT LCOs are in production today at sizes ranging from 0.33" for Viewfinders to 17" for LCD TVs with 21.3" recently demonstrated. Because of their form factor, resolution, brightness and other benefits, LTPS TFT LCD unit shipments, revenues and capacity are expected to grow rapidly, particularly for mobile applications. However, despite the strong outlook, LTPS TFT LCOs are still faced with numerous challenges from a market and technology perspective. LTPS TFT LCD producers were surveyed on which of the current challenges were the most problematic among other questions.

Low-temperature polysilicon (LTPS) technology has continued to mature with the passing of each year since LTPS mass production began. The integration of complex circuits has become possible with advances in microprocessing, leading to the realization of panels with highly advanced functions. At the same time, efforts have been made to meet market demands for lower costs, thereby boosting competitive strength. Today, LTPS-TFT LCDs have become standard equipment for the monitors of digital still cameras, and inroads are being made into the massive cellular phone market. Micro displays such as electronic viewfinders, which were previously only possible with high-temperature polysilicon technology, can now also be made with LTPS, thus expanding the scope of the technology. AMOLED displays using the LTPS-TFT as a back plane are also approaching the stage of industrialization. The hidden potential for the OLED to replace the familiar LCD has prompted Widespread anticipation for this emerging technology. This paper reflects on the history of LTPS technology, then looks forward to its future prospects and suggests a variety of potential fields of application.

In this paper, we describe and review the main techniques which are currently being used or studied, in order to synthesise thin films of device-worthy polycrystalline silicon material (poly-Si) on glass or other non-refractory large area substrates. The problems and limitations of the excimer laser processing are first emphasised and some novel or revisited crystallisation processes with good potential for industrialisation are subsequently presented and discussed.

Sequential lateral solidification has recently become an option for manufacturing LTPS TFT LCDs owing to the availability of production equipment. Compared to the currently established ELA crystallization method, it is characterized by its low running costs and the high quality microstructures that can be obtained. In this presentation, we will review the production-related developments as well as elaborate on recent research activities that deal with a number of crystallization schemes that can be beneficial for future active-matrix display products.

The information display industry this century has to improve our life without increasing energy consumption. Suftla technology together with high-performance silicon thin film transistors (TFTs) and ink-jet technology for forming metal-wiring and organic TFTs will play leading roles for achieving this requirement. In this paper these technologies are reviewed and the concept of the information displays in near future is discussed.

LCD TV market is rapidly growing. It is forecasted that the main size of the LCD TV will be about 20" to 52". The IPS mode is going to lead the large TFT LCD technology for TV application among other LC modes which are VA mode, WVTN mode and so on, because the display image quality of the IPS mode is superior to others.

To be able to show moving images without visual problems like blurring and tailing, the response time of liquid crystal display (LCDs) must be improved. In this paper we will discuss our progress in improving the response time by optimizing the cell configuration and the use of new liquid crystal mixtures. A 20.1inch diagonal UXGA IPS TFT-LCD has been developed having a response time as fast as l-frame time (16msec) for white-black operation and less than 16msec in all gray levels without applying ODC (Over Driving Circuit). This is very important because one of the technology to reduce motion blurring, the use of scanning backlight is conditioned by 16msec for all grays. The excellent gray-to-gray response can be explained by virtue of fundamental characteristics of S-IPS mode and makes a good contrast with the results of VA mode.

For the analog output buffer in the data driver for large size and high resolution TFT-LCDs, we proposed operational amplifier (op-amp) which contains newly developed transconductance-boosted input stage which enables the low-power consumption and the high slew-rate. The slew-rate and the quiescent current of the proposed op-amp are $6.1V/{\mu}sec$ and $8{\mu}A$, respectively.

One of the most serious problems in AC PDP is low luminous efficiency. One possible candidate for solving such a problem is using high Xe partial pressure. Increase of Xe percentages causes the driving voltage to rise, although brightness is increased. In this study, a new electrode structure is proposed to solve this problem. A test panel fabricated by using new electrode shows improvement of efficiency by 25% and reduction of sustain voltage by 20% compared with the conventional structure.

We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.

We studied the effect of barrier rib height variation using ray-optics code incorporated with three-dimensional plasma simulation to analyze the effects of cell geometry for varying pressure conditions. The optimal barrier rib height decreased as the Xe partial pressure increased which resulted in due to the formation of local, strong sheath under high Xe partial pressure condition.

The positive column discharge characteristics in the long gap (440 ${\mu}m$) are investigated based on the voltage distribution among three electrodes. In particular, the effects of the amplitude and width of the short pulse applied to the address electrode on the positive column discharge characteristics are examined intensively. By proper controlling of the amplitude and width of the address short pulse, it is found that the positive column discharge in the long gap is well constructed. As a result, under the stable static voltage margin condition, the firing and sustaining voltages are as low as those of conventional short gap(60 ${\mu}m$) discharge($V _f=220V$, $V_s=150V$) and the color purity is improved. Moreover, the luminous efficiency increases up to 60% in comparison with the conventional case.

The real test panel with the $200{\mu}m$ discharge gap in a coplanar AC plasma display panel was investigated. The auxiliary electrode was placed between two sustain electrodes and used for providing wall charges and prime particle during sustain period. The luminous efficiency had the maximum value when the voltage of the auxiliary pulses was 20 ${\sim}$ 100[V]. The luminous efficiency of coplanar long-gap discharge with auxiliary electrode was 2.6 times as much as that of the conventional structure.

A new high speed addressing method is proposed to reduce the addressing time below lus per line in AC PDP. In this method, the priming discharge is used to achieve a high speed addressing without adding an auxiliary electrode. Two different types of priming discharges were studied to achieve a high speed addressing and also reduce the inherent light output caused by the priming discharge in order to improve the contrast ratio characteristics. In the panel experiment, the addressing was successfully done with a lus address pulse width in the new method and the better contrast ratio was achieved in the Y-A priming rather than the Y-X priming case even though the reduction of the address period was smaller than that of the Y-X priming due to the extra address time for the priming discharges.

In this paper, we investigated the phosphor degradation characteristics on the ultra violet ray (UV) irradiation as well as ion bombardment. We propose a novel experiment method which is related with phosphor degradation causes. The phosphor deterioration experiments were made on the UV irradiation as well as ion bombardment. To carry out the experiment and compare the results, we made up the specific experimental setup. The results show that the deterioration by ion damage is more rigorous than that by vacuum ultra violet (VUV) on the phosphor efficiency.

The sustain discharge mode using various auxiliary pulses was proposed to improve both the luminance and luminous efficiency of ac-plasma display panel (ac-PDP). It was found that the various auxiliary pulses, which were applied at the rising and falling time of the sustain pulse, played a role in strengthening both the main and self-erasing discharges. As a result, the sustain waveforms with auxiliary pulse improved both the luminance of 23 % and the luminous efficiency of 36 %, when compared with the conventional sustain waveform without auxiliary pulse.

A working prototype of a 32-inch wide-screen CRT is presented with a tube length of only 32 cm. This small length requires a '$135^{\circ}$' deflection design, which puts strong requirements upon the DY, glass and mask box design.

We describe a new method to initialize the raster and convergence of a flat intelligent tracking (F!T) tube. By splitting up the initialization algorithm into three parts, it can comply with the variety of boundary conditions that are stated for a consumer product. Experiments on raster initialization have shown that the new algorithm speeds up the initialization by one order of magnitude.

Electron beam guides hold the promise of a flat-panel display based on CRT technology. We propose to integrate the periodic focusing electrodes of such beam guides on a glass channel plate for a robust and simple design. The feasibility of this idea is tested numerically and experimentally.

Vertical Colour Selection (VCS) is an option for slim CRTs with increased sharpness and brightness. The direction of self-convergence of the DY is changed to vertical in order to obtain better spot uniformity, but the line scan direction remains horizontal. Hence, no video conversion is needed, contrary to transposed scan. In this paper we address two issues: First, there is a high risk of moire, since the scan lines and the phosphor stripes are parallel. We propose a feedback mechanism guiding the electron beams towards the middle of the mask slots. As positive side effects, the brightness is improved and the shadow mask can be made of a cheap type of steel. Secondly, VCS deflection coils have to satisfy different requirements than coils in ordinary CRTs. We discuss the design rules for self-convergent VCS coils and present simulation results.

CRTs can survive in the long run for TV applications, because of their realistic reproduction of live images. CRT technology development has to be directed towards form factor, but also attention has to be paid to the form design of sets. The CRT is the only technology allowing a doubly curved screen surface.

CRTs have been in the mainstream of displays for over 100 years since K. F. Brown invented the first tube in 1897. The position of CRTs, however, has come to be threatened by flat panel displays, whose performances are notably improved these days. The keys to survival of CRTs as leading displays are examined in this report.

Soruce/drain (or, LDD) formation technology is critical to device reliability especially in the case of short channel LTPS-TFT devices. Ion shower doping with a main ion source of $P_2H_x$ was conducted on ELA Poly-Si. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si.

Thermal annealing of a polymer light-emitting diode (PLED) is shown to result in a remarkable improvement in the long-term stability of the device. The best half-life is obtained at an annealing temperature above the $T_g$ of emitting polymer. It is shown that the annealing of the emitting polymer layer results in a more than an order of magnitude increase in the half-life in spite of a decrease in the efficiency of the device as the annealing temperature increases.$^1$

Piezoelectric ink jet offers a promising combination of productivity, reliability and uniformity that are appropriate for jetting organic electronic materials. Spectra is manufacturing a printhead specifically for display manufacturing. This printhead contains a robust material set and is intended to allow calibration of individual nozzles to meet uniformity requirements of+/-2% for display manufacture.

Laser-Induced Thermal Imaging (LITI) is a laser addressed patterning process and has unique advantages, such as high-resolution patterning with over-all position accuracy of the imaged stripes within 2.5 micrometer and scalability to large-size mother glass. This accuracy is accomplished using real-time error correction and a high -resolution stage control system that includes laser interferometers. Here the new concept of mixed hybrid system which complement the advantages of small molecular and polymeric materials for use as an OLED; our system can realize the easy processing of polymers and high luminance efficiency of recently developed small molecules. LITI process enables to pattern the stripes with excellent thickness uniformity and multi-stacking of various functional layers without using any type of fine metal shadow mask. In this study, we report a full-color hybrid OLED using the multi-layered structure of small molecular/polymeric species.

Universal Display Corporation (UDC), together with its University partners at Princeton University and the University of Southern California, are developing high-efficiency electrophosphorescent OLED devices, based on triplet emission. Recent results show both excellent device efficiencies and good lifetimes for the commercialization of low power consumption, full-color, passive and activematrix OLED displays. We also show that phosphorescent devices may be driven by low cost amorphous silicon backplanes, and discuss the benefits of using our proprietary top emission OLED device architecture.

We report four new phosphorescent iridium(III} complexes with 2,4-diphenyl-1,3-oxazole [$Ir(24dpo)_3$], 2,5-diphenyl-1,3-oxazole [$Ir(25dpo)_3$], 2-(3-thienyl) pyridine [$Ir(3thpyh)_3$] and [Ir(3thpy)2(acac)]. Three of them demonstrate good photophysical properties to be used as dopants to organic polymer matrix or to be used "as is" without a host matrix to fabricate OLEDs. Green and yellow light emission was observed for the photoluminescence: 569/525, 549/498 nm and 557,604/533 (solid state/$CH_2Cl_2$ solution) for $Ir(24dpo)_3$, $Ir(3thpyh)_3$ and $Ir(3thpyh)_2$acac respectively. Room temperature luminescent lifetimes are 2.5 and 1.8 ${\mu}s$ and quantum efficiencies 37 and 53%for $Ir(24dpo)_3$ and $Ir(3thpyh)_3$. The complexes are stable in air and sublimable at low pressure without considerable decomposition. Comparison of physicochemical properties of the reported iridium(III) cyclometalated compounds with that known from literature is carried out.

We performed semiempirical (AMl and ZINDO) and ab initio (HF and DFT) calculations, to investigate molecular structures and optical properties of DCM and its derivatives. DCM and its derivatives are used as a red fluorescent dopant of the organic electroluminescent host materials, $Alq_3$. We have studied the relationship between the molecular structure and the optical properties of these molecules for the improvement of EL efficiencies. Wavelength at the absorption maximum was found to be red-shifted when the molecule is substituted with both strong electron donating and withdrawing functional groups. A new red fluorescent dye was predicted by QSPR study based on calculations and experimental data.

We propose a new interpolation algorithm that can effectively decrease motion blurring on moving image. The proposed algorithm can be easily applied to FPD systems, since its structure is very simple. The proposed algorithm has been simulated and verified for image definition and sharpness, quantitatively and qualitatively. The simulation result shows that the proposed method provides better performance than the conventional ones..

For the CNT-FED to be cost-effective, many efforts for the lower voltage operation have been made in the under-gate cathode structure. In this study, the effects of the frit proportion in the CNT paste, cathode electrode width, CNT-to-counter electrode gap, and the CNT length in the cathode structure were examined.

The actively addressable carbon nanotube (CNT) emitters have been studied for stable and low-voltage driving field emission display (FED). The a-Si TFT and screen-printed CNT emitters were successfully integrated to fabricate the diode type active-matrix cathode and FED panel. Also, we propose a new FED architecture based on the actively controlled triode CNT emitters showing the properties of ideal triode type cathode with electron beam focusing effect.

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

$Y_2O_2S:Eu$ phosphors with fine particle have been synthesized by citric acid-gel method. In this method, $Na_2S_2O_3$ was added to $Y_2O_3S:Eu$ precursor, then the mixture was fired at $1000^{\circ}C$ for 3h in $S_2$ atmosphere. When the $Y_2O_3S:Eu$ precursor was pre-annealed at $400{\sim}700^{\circ}C$ before the firing of the mixture, the fine particles with a diameter of around 1 ${\mu}m$ were obtained after the firing. The phosphor pre-annealed at $400^{\circ}C$ showed a luminance and CIE color coordinates of 2350 $cd/m^2$ and (0.61, 0.37), respectively, at under excitation of 3 kV and $60{\mu}A/cm^2$.

The field emission and luminescent properties of carbon nanotubes (CNTs) that were straightened out by argon ion irradiation were investigated. Argon ion irradiation permanently straightened out both as-grown and screen-printed CNTs in the presence of a strong electric field. The straightening process enhanced the emission properties of CNT films by showing a decrease in turn-on field, an increase in total emission current, and a stable emission. Furthermore, the number of emission sites was confirmed to increase by observing the luminescent properties of CNT films after the straightening. The mechanism involved in the straightening of the CNTs is proposed and the enhancement in field emission is discussed in detail.

We have developed a reflective 3.5" QVGA color TFT-LCD with high reflection within viewing angle. For this, We have introduced new pixel design and asymmetric reflector. Based on these technical concepts, we get a high aperture ratio of 93.5% and much higher reflection up to 64% with a 3.5" prototype panel.

The Capacitor DAC with gamma correction is proposed for TFT-LCD (Liquid Crystal Display) driver application. It is based on two ideas. First, 6bit digital code is converted 8bit digital code by memory circuit (Look Up Table) for gamma correction. second, weighted voltage ratio DAC is proposed for reducing area and power consumption.

We have developed flexible MIM LCDs by using plastic film substrate. MIM array and cells were fabricated with low temperature process and material technology. As an insulator of MIM, SiNx was introduced at the low temperature allowable for plastic substrate. The fabricated MIM devices show high electrical performance for LC driving. We discuss its process and characteristics.

We present a process for printing active matrix displays. In this process, transistors are fabricated using soluble semi-conducting and conducting materials. Accurate definition of the transistor channel and other circuit components is achieved by direct inkjet printing combined with surface energy patterning. We present results on our 4,800 pixel, 50 dpi, active matrix displays.

New photopolymers were designed and prepared using the photosensitive polymer binders. The photochemical reaction of the photosensitive polymer binder was studied by virtue of UV absorption and infrared spectroscopy. The holographic gratings were successfully fabricated in these photopolymer film samples by conventional optical interference method. We also investigated the effect of photocrosslink in the polymer binder on the diffraction behavior of the photopolymer. The dynamic behaviors of the grating formation were studied with the change of exposure intensity in terms of the diffraction efficiency. Particularly, we focused our efforts to observe the variation of the diffraction efficiency during post UV curing process.

This paper reports the characteristics of TFTs, formed inside a location-controlled grain: "single-crystalline" Si TFTs (c-Si TFTs). Position of the grains were controlled with a great precision by "${\mu}-Czochralski$ (grain-filter) process". Effects of process parameters, such as, deposition method of gate $SiO_2$, crystallization energy density and position of the channel with respect to the grain filters on TFT characteristics is investigated. It is concluded that the characteristics of TFTs drastically improved by avoiding the grain filter from the channel region. With TFTs having the current-flow direction parallel to radial direction from the grain-filter, electron mobility and subthreshold swing of 600 $cm^2/Vs$ and 0.21 V/dec. respectively are obtained.

The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Successful integration of gate circuit, transmission gate and level shifter was performed in a large area uniformly. Uniformity and high performance from high quality grains of SLS technology make it possible to come true a uniform large size LTPS TFT-LCD with half number of data driver IC's used in typical a-Si LCD. High aperture ratio of 65% was obtained using an organic inter insulating method, which lead a high brightness of 500cd/cm2.

We have previously shown that single-crystal Si regions on glass substrates can be obtained by crystallizing as-deposited a-Si films using a specific version of the SLS process, referred to as dot-SLS Such single-crystal islands can, for instance, be used for manufacturing of high-performance TFTs that are expected to become increasingly more relevant in the future. In this paper, we demonstrate that the dot-SLS process can be implemented using a continuous-scan SLS scheme that enables the attainment of high crystallization rates that are desired for industrial applications. We will furthermore report on recent experimental findings regarding the nature of the defects that can be created during the process.

The large size grain of poly-Si film is obtained above the upper limit of excimer laser energy at which the random nucleation occurs. We simulate the time dependent temperature profile of ${\alpha}-Si/SiO_2/Si$ substrate structure according to the excimer laser energy with $ANSYS^{\circledR}$ simulator. As the thickness is increased, the laser energy for the melting of ${\alpha}-Si$ film is increased.

The study of confined liquid crystals flourished in the decade of the nineties. Liquid crystals properties have been probed after confinement in well-defined or interconnected geometries as those available in porous media and in polymer networks. In this work we emphasized the power of the nuclear magnetic resonance technique to determine the confined liquid crystal structures. We also present unexpected results on the dependence of the confined liquid crystal configuration on the chain length.

We report several difluoro isothiocyanato tolane-based liquid crystal (LC) singles having a high optical birefringence. Several eutectic mixtures are formulatd using these LC singles exhibiting a wide nematic phase range and high birefringence. We will report the physical properties of and photochemical stability of these new eutectic mixtures.

Stressed liquid crystals, SLCs, consist of a lowdensity polymer network dispersed in a nematic host. We induced stress by shearing the material. Alignment layers are not required because the liquid crystal director uniformly aligns along the direction of shear. The shearing stress also eliminates light scattering and results in sub-millisecond switching speeds, making them good candidates for video display applications.

TFT LCD mode has some well-documented performance limitations, namely limited viewing angle, inversion of the gray scale levels and poor luminance efficiency because of the necessity of using crossed polarisers attached to the display cell. During the last few years many initiatives have been undertaken to solve these problems by incorporation birefringent films of various designs into the LCD module. Controlling the optical performance of LCDs often requires combination of liquid crystal material properties, cell parameters and optical films. Such optical films have traditionally been made with stretched polymer materials such as polycarbonate, but recently coated liquid crystalline materials have been used to give improved optical films which can greatly enhance the performance of LCDs. We have now developed reactive mesogen materials to add ultra-thin optical layers into the display structure, and these allow the potential for many new applications.

Polymerization induced diffusion has been successfully applied to create new display components. Based on this principle a new technique to produce polymer covered liquid crystal layers on a single substrate, called photo-enforced stratification, allows cost-effective production of ultra-thin LCDs. The two-step photopolymerization-induced phase separation of a liquid crystal and a polymer precursor can be performed on a variety of substrates and provides freedom in display design.

Computational calculations are now successfully introduced to design liquid crystal molecules for uses in modern active-matrix displays. These material technologies are practically applied to develop novel compounds, enabling formulation of advanced liquid crystal mixtures together with a newly developed mixture purification method. Typical examples of these liquid crystal mixtures are introduced for modern displays in various applications.

Novel design techniques of half switching method, double layer structure, and multidomain structure for transflective liquid crystal display modes are introduced. Design examples of these techniques which perform excellent display characteristics are described.

The technology and performance of the world-largest 54-inch LCD TV using PVA mode have been introduced from two points of view: one is to manufacture large-size panels, the other is to improve electro-optical performance required for multimedia applications. Current ongoing research activities that have been explored include new stitching design, one drop filling with column spacer, response time less than one frame rate, color performance and light efficiency enhancement.

Reflective mode liquid crystal on silicon (LCoS) microdisplay is the major technology that can produce extremely high-resolution displays. A very large number of pixels can be packed onto the CMOS circuit with integrated drivers that can be projected to any size screen. Large size direct-view thin film transistor (TFT) LCDs becomes very difficult to make and to drive as the information content increases. However, the existing LC alignment technology for the LCoS cell fabrication is still the mechanical rubbing method, which is prone to have minor defects that are not visible normally but can be detrimental if projected to a large screen. In this paper, application of photo-alignment to LCoS fabrication is presented. The alignment is done by three-step exposure process. A MTN $90^{\circ}$ mode is chose as to evaluate the performance of this technique. The comparison with rubbing mode shows the performance of photo-alignment is comparable and even better in some aspect, such as sharper RVC curve and higher contrast ratio.

We discuss several key technologies of liquid crystal displays (LCDs) that share common features of all organic displays (AODs). An overview of the morphological effects associated with molecular ordering at interfaces on the Crystallinity and the carrier mobility in organic thin film transistors (OTFTs) is given from the viewpoint of the alignment mechanism for LCDs. Recent progress of improving the carrier mobility in the OTFTs is also reviewed.

We fabricated a flexible ferroelectric liquid crystal (FLC) device containing polymer walls and networks which fix plastic film substrates. The device using 100-${\mu}m$-thick substrates could be bent in a radius of 7mm without disordering the FLC alignment. When sandwiched between polarizers a roll-up display with high-speed grayscale capability for moving-image displays was created.

We have designed novel transreflective liquid crystal displays which utilize dielectric mirrors. The reflective and transmissive modes are operated in different wavelength regions. The displays have the advantages: (1) the brightness as a function of applied voltage is the same for both modes, (2) the backlight and ambient light are utilized efficiently.

Holographic diffuser(HD) layer was demonstrated to be located inside LC cell for a transmissive LCD of TFT-array on Color Filter structure. Master pattern of this layer was generated by holographic method and this pattern was replicated by the stamping of the master pattern on UV resin. Combined with a compensation film, TN-mode LCD with this layer showed improved viewing angle characteristics, especially along the up-down direction.

As a convenient means for the characterization of the wall voltage and wall charge of AC PDPs during the sustain period, an equivalent circuit model for AC PDPs is presented. The equivalent circuit model for AC PDPs consists of capacitors and thyristors. The equivalent circuit model is based on the physical structure of the AC PDP and the I-V characteristic of the discharge space. This equivalent circuit model can be easily implemented in the standard simulators such as SPICE and can easily simulate the variation of the current, charge and voltage involved in AC PDPs as the supply voltage varies.

We reported the method for the relatively simple equalizing pulse to reduce dynamic false contour. Equalizing pulse is determined by look-up-table and moving direction and velocity of the image. Used lookup-table is a few. If image moves to right or left, necessary LUT is only one for the velocity of 1 pixel/tvfield to right or left. This technique makes the process simple after obtaining motion information.

We have proposed a new reset discharge method for AC PDP, which is composed of fast Ramp biased Multiple Short Pulses (RMSP). By using this method, we achieved stable reset discharges with reduced reset time. At the same time, it resulted in lower background luminance as well as stable and higher address margin using the tail effect.

The effects of an auxiliary address pulse driving scheme, in which an auxiliary short pulse was applied to the address electrode during a sustain-period, was examined under the various image patterns of the 42-inch WVGA ac-PDP. When the auxiliary address pulse driving scheme was applied, the luminance of the red, green and blue cells were measured respectively. The luminance, luminous efficiency and current were measured under the full-white pattern of the 42-inch ac-PDP. As a result, the luminance of blue cell was improved approximately by 17 %, whereas the luminous efficiency of the full-white pattern was improved approximately by 34 % without a misfiring discharge in comparison with conventional driving scheme.

The current paper presents the design and implementation of a low-profile dc-to-dc converter developed as a power supply for the sustain driving circuit inside large-area wall-mount ac PDP application systems. Details on the design and implementation of a 500 W prototype dc-to-dc converter, miniaturized within a 230 $mm{\times}130$ mm area with a thickness of 25 mm while still achieving a 95 % conversion efficiency, are presented to demonstrate the feasibility and application potentials of the proposed low-profile dc-to-dc converter.

Main PDP panel efficacy improvement factors are discussed. A large panel efficacy improvement can be obtained through a combination of discharge efficiency improvement and phosphor improvement. Important design elements are a high Xe-content gas mixture, the application of a $TiO_2-layer$, and a new green phosphor with little saturation at high VUV-load. In a 4-inch color test panel with a conventional stripe-type cell configuration a white efficacy of 4.4 lm/W and a luminance of 5000 $cd/m^2$ is obtained for sustaining at 250V in addressed condition.

High Luminance PDPs have been developed using high efficient electrode structure, discharge gas and fishbone type barrier ribs. New phosphors for the good picture quality were developed. Also, New manufacturing processes such as CPBB were applied in order to reduce processing steps. High Luminance of 1,000 $cd/m^2$ was obtained in the series of 42 inch, 50 inch and 60 inch PDPs.

Optimization of the luminance, luminous efficiency, and address voltage margin characteristics has been made on the delta color array PDP with various hexagonal shape subpixels. The optimal subpixel and electrode designs are obtained for the 42-inch high-definition PDP ($1,366{\times}768$) with the fine pixel pitch less than 0.7 mm. The hexagonal delta array structure shows more improved characteristics than that of the normal delta array structure with rectangular shape subpixels.

In this paper, a new barrier rib forming method of embossed barrier rib (EBR) formation process for the PDP rear panel was introduced. The process is mainly composed of green sheet fabrication, lamination of the green sheet on the rear glass panel having data electrodes, and roll embossing followed by firing. The EBR process has two advantages over the conventional barrier rib forming methods. One is the process requires less equipment investment than the conventional methods by about 20% of the current rear panel fabrication equipment investment owing to the simplified fabrication process. The other advantage is its reduced rear panel manufacturing cost by eliminating the time consuming and complicated processes and waste of materials in the conventional methods. In this study, general procedure of EBR fabrication process is described and the characteristics of prototype PDP using EBR panel are discussed.

Nano-porous alumina was investigated as a protecting layer in an AC Plasma Display Panel. A 2 ${\mu}m$ thick nano-porous $Al_2O_3$ layer inserted with MgO was formed on the dielectric layer instead of the conventional 500 nm-thick MgO thin film. Both nano-porous $Al_2O_3$layer and inserted MgO were prepared by wet process. The luminance and luminous efficiency of 3-inch test panel adopting nano-porous $Al_2O_3$ was higher than that of the conventional PDP.

In this study, sintering behavior of closed-cell type barrier ribs formed via capillary molding route was examined. Sintering of the molded barrier ribs revealed asymmetric shrinkage, leading to distortion of the cells. The effects of the parameters such as solid loading in the paste, presintering temperature, and morphology of the barrier ribs on the sintering shrinkage of the barrier ribs were investigated.

The recent development of InGaN-based white light emitting diodes (LEDs) has expanded their potential applications in areas such as white electric home appliances, backlight for mobile phone or notebook PC, and indoor lightings. In this lecture, recent researches related to the phosphors for LEDs applications and their luminescent properties were reviewed. PDPs are considered as the most potential flat panel displays with a large-screen size. Phosphors in PDPs directly affect the brightness and lifetime. So, many researchers have tried to improve the luminescence characteristics of the phosphors especially under vacuum ultraviolet (VUV) excitation. We overviewed recent research trends and conclusive achievements for the PDP phosphors.

A search for a new phosphor composition of excellent performance in systematic ways requires lots of research efforts, and often turns out to be very timeconsuming and difficult. Thus, usually practical ways are taken to improve the performance of phosphors. A few examples of practical surface treatments on phosphors such as $In_2O_3$ coating on $ZnGa_2O_4:Mn$, phosphoric acid treatment on ZnS:Ag,Cl, and base KOH treatment with ultrasonication on ZnS:Ag,Cl are presented. The reasons for the improvement of luminescence intensity or degradation properties after these treatments are discussed based upon careful analyses on the surface of the phosphors and a proposed model on charge carriers generated by electron beam excitation.

We reported researches of possibility of the usage of known electrooptical effects (EOE) for diffractive displays (DLCD). We found different EOEs provide the possibility of broad selection of steepness of volt-contrast characteristics at rather large steep of modulation without the usage polarizes. The data are represented much promising for broad development DLCDs.

Photosensitive electordes(Ag and Black) are widely used in the patterning of both address and bus electrodes on the rear and front panel of plasma display panel (PDP). As the need for high resolution(>XGA) and large area(>60 inches) PDP is increased, basic understanding of each component of formulation on the photolithographic process of patterning electrodes are required in order to increase the yield in the production of PDP. In this work, the materials and amount of necessary components of photosensitive electrode paste and their effect on the photolithographic process of patterning electrodes were studied.

We have fabricated a new-type high-brightness phosphor consisting of a sol-gel derived glass with finely dispersed semiconductor nanocrystals. It is possible to obtain visible light of any wavelength with a single UV irradiation. The glass firmly adheres to a glass substrate. Therefore it can easily be used for developing devices.

Paste micro-injection molding process was applied for fabrication of barrier ribs of PDP in an attempt to reduce processing steps and materials loss during the processing. For the paste, a thermally curable one was used and for the mold, a polymeric soft mold was used. It was demonstrated that the micro-molding process can be used successfully in producing barrier ribs of PDP.

It is inevitable that reconsideration of the use of lead oxides in the electronics industry be undertaken as long as detrimental effects to the environment remain. To solve this problem, many recent studies on Pb-free compositions for PDP (plasma display panel) dielectric layers and also sealing glass compositions have been made. The present study was conducted to investigate whether the alternative systems for leadfree low firing glasses, detailed below, are available for use in PDP materials. The results suggest that low-melting phosphate glasses would be suitable as an alternative material for the Pb-based dielectric layer, sealants and barrier ribs in PDP.

New planar discharge structured AC-PDP has been developed by using TFCS (Thick Film Ceramic Sheet) technology. By applying TFCS to AC-PDP, a sustaining electrode and scanning electrodes are embedded in the TFCS. It is shown that panel performances such as electrical and optical characteristics are superior to commercialized coplanar AC-PDP as well as cost reduction. Moreover the experimental result shows panel performances can be improved drastically by continuous development.

We will introduce our new concept deposition system for SMOLED manufacturing in this conference. This system is designed to deposit organic and metal material to downward to overcome the limit of substrate size and process tact time hurdle for OLED mass production, and is organized with organic deposition chamber, substrate pre-cleaning chamber, metal deposition chamber and encapsulation system. These entire process chambers are integrated with linear type substrate transfer system. We also compare our new SMOLED manufacturing system with conventional vacuum deposition systems, and show basic organic thin film property data, organic material deposition property data, and basic device property.

When manufacturing large sized OLED devices, the evaporation source is the most important technology. The nozzle source maintains the uniformity of the large-size deposited organic thin film at the 2-3% level and its usage is only 0.8 gram/hour. The in-line manufacturing deposition system combining with an encapsulation system is proposed.

Exitech has developed a range of advanced laser ablation tools for the manufacture of display device structures on super large glass and plastic substrates. Technical information and cost of ownership data about these tools together with key areas of application are presented

An AP plasma technology has been developed for the application of dry cleaner, PR ashing and PI rework in the large glass size. The technology is cost effective, environment friendly, and best fits for coming generation LCD production since the design is easily scalable to bigger size glasses. Surface cleaning results based on the contact angle study has been presented for $5^{th}$ generation LCD bare glass. PR ashing results and various parametric studies have been also presented.

In contact-type multiview 3 dimensional imaging systems, the optimum design parameters are not easily found because of difficulty in determining the size of viewing zone. Two factors related with the viewing zone, such as different view image patching and the widths of the viewing regions are discussed to explain the difficulty.

Recent developments in a new method of holographic computer-aided imaging will be reviewed. Our hologram is computed from angular viewpoints of the observed 3D scene. The recorded data are processed to yield a 2D computer-generated hologram. When this hologram is illuminated properly, a 3D image of the scene is reconstructed.

Computer-generated holograms of real existing are synthesized by using a series of projection images of an incoherently illuminated object. The principle of computer tomography is applied to obtain the 3-D Fourier spectrum of the object. A Fresnel hologram is calculated directly from the 3-D Fourier spectrum. Experimental results with simulation are presented and some optical properties of reconstructed images are discussed.

A flat panel field sequential 3D display can be made by illuminating a ferroelectric liquid crystal display with scanning illumination passed through a transparent slab embossed with a grating. The concept is expected to enable wide fields of view, sharp discrimination between views, little blurring at depth, and no repetition of views.

At the paper the method of 3D holographic moving image reconstruction is discused. The main idea of this method is based on the substitution of optically created static hologram by equal diffraction array created by acoustical (AO) field which formed by bulk sound waves. Such sound field can be considered as dynamic optical hologram, which is electrically controlled. At the certain moment of time when the whole hologram already formed, the reference optical beam illuminates it, and due to acoustooptical interaction the original optical image is reconstructed. As the acoustically created dynamic optical hologram is electronically controlled, it can be used for moving 3-dimentional scene reconstruction in real time. The architecture of holographic display for moving scene reconstruction is presented at this paper. The calculated variant of such display laboratory model is. given and discussed. The mathematical simulation of step by step images recording and reconstruction is given. The pictures of calculated reconstructed images are presented. The prospects, application areas, shortcomings and main problems are discussed.

Optical architecture and experimental results on low cost multiview autostereoscopic projection display are presented. The display, containing only one high resolution projection panel and only one projection lens is capable of displaying multiview autostereoscopic images. Key components, applied in the display are segmented mirror for splitting the projection beam and one-dimensional diffuser with slanted axis of diffusion for viewing zone formation. Image distortions, inherent in the display have been compensated with opposite sign pre-distortion of projected perspective images.

We firstly report liquid crystal shutter based on plastic film and its application to 3D shutter for stereoscopic displays. Plastic liquid crystal shutters have remarkable advantages compared to conventional glass liquid crystal shutters. They are thin, light and non-breakable so that very comfortable 3D shutter eye-wear can be realized using them. The concepts, optical performances and reliability test results of plastic film liquid crystal shutters are presented.

Orientation of E7 liquid crystals (LCs) confined to 200 nm-diameter cylindrical cavities of Anodisc membranes are investigated by FTIR dichroism techniques. The cavity walls of the confining pores are chemically modified with different aliphatic acids ($C_nH_{2n+1}COOH$, n=5, 6, 7, 9). From the FTIR spectra of aliphatic acid treated alumina Anodsic membranes, we found the salt formation between -COOH group of aliphatic acid and Anodisc membrane. From the FTIR spectra of LC filled Anodisc membranes, we found abrupt alignment direction change of LC molecules between n=6 and 7 for 2% aliphatic acid treated Anodisc membranes, from parallel to perpendicular direction to the cavity walls. But 4% aliphatic acid treated Anodisc membranes, alignment direction of LC molecules changed between n=5 and n=6, from parallel to perpendicular direction. The same trend was observed for $^2H-NMR$ measurements.

We studied a periodic boundary effect in liquid crystal (LC) devices with multi-domains consisting of homeotropic and hybrid alignments. In this configuration, the surface anchoring energy was determined using the LC director-distorted length near the domain boundary, in a linear approximation of the director profile based on the continuum theory. The distorted length was measured in the LC binary diffraction grating.

We have synthesized a new material of polyoxetane based liquid crystalline polymer/liquid crystal (LCP/LC) for flexible memory or dynamic mode device and characterized the electro-optics behavior of this system. The microscopic dynamic behavior of main chain, side chain, and the low molecular weight LC were characterized by X-ray scattering and time resolved FTIR..

We report on the optimization of the fabrication process of hybrid sol-gel thin film deposition to produce low cost $1 {\times} 16$ splitters for optical communications. We learn that sol-gel film thickness is dependent upon the spinning speeds and viscosity of the sol-gel solutions and refractive index upon the dopant concentrations of Al and Zr in the sol solutions. We could find the optimized physical conditions to achieve the desired thickness of core and cladding layers. We will further carry out the fabrication and measurements of insertion loss, polarization dependent loss (PDL), etc. for the performance of fabricated splitter devices.

Some important properties of the liquid crystal molecules containing fluoro-isothiocyanated molecules have been studied using quantum chemical calculations and the results were correlated with respect to the structure of the molecules. Dielectric anisotropy, birefringence have been predicted for several unknown structures. The Maier-Meier, Vuks equation were used for the dielectric anisotropy and birefringence calculation. The results obtained by empirical approximation showed a good agreement with experiment ones.

Photoalignment materials of PGMAcr, poly[3-(acryloyloxy)-2-hydroxypropyl methacrylate] using an acrylate unit photopolymerized by a photo-initiator and PGMA4Ch, poly[3- (4-ehalconyloxy)-2-hydroxypropyl methacrylate] using photodimerization by the chalcone group were synthesized. Also, the liquid crystal (LC) alignment capabilities on the photopolymer layers were studied. A good LC alignment with UV exposure on the PGMAcr surface can be obtained. However, LC alignment defects were observed on the PGMA4Ch surface. The LC alignment capability of the PGMAcr surface by the photoinitiator was better than that of the PGMA4Ch surface by the chalcone group which is a photosensitive moiety.

Transmittance and resistivity is investigated according to bending of ITO (indium tin oxide)film with four other multi-barrier film. Transmission data of ITO film with four ITO films showed there was about large 90% transmission above 550 nm wavelength at three multi-barrier structures. But, both -side hard coated structure showed relatively low 75% transmission above 550 nm wavelength. Also, resistivity change of four other multi-barrier film showed there was the lowest change at oneside hard coated structure. Subsequently, with result of resistivity change according to position, it was known the resistivity change of the center increased rapidly than that of the edge.

Electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the DLC thin film surface were studied. An excellent voltage-transmittance (VT) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for 1 min. Also, a faster response time for the ion beam aligned TN-LCD can be achieved with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a a-C:H thin film surface. A good LC alignment by UV exposure on the a-C.H thin film surface at 200 ${\AA}$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the a-C:H thin film surface was observed at annealing temperature of 180 $^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of 200 $^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method on the a-C:H thin film surface can be achieved.

New banana-shaped achiral compounds, 4-chloro-1,3-phenylene bis [4-4(3-fluoro-9-alkenyloxy) phenyl-iminomethylbenzoate]s and 4-chloro-1,3-phenylene bis [4-4-(3-fluoro-10-alkanyloxy) phenyliminomethyl benzoate]s were synthesized by varying the substituent (X=H, F, or Cl); their electrooptical properties are described. The smectic phases, including a switchable chiral smectic C ($SmC^{\ast}$) phase, were characterized by differential scanning calorimetry, polarizing optical microscopy, and triangular method. The presence of vinyl end group at the terminals of linear side wings in the banana-shaped molecules induced a decrease in melting temperature. The smectic phase having the undecenyloxy group such $as-(CH_2)_9CH=CH_2$ showed ferroelectric switching, and its value of spontaneous polarization on reversal of an applied electric field was 2250 $nC/cm^2$, while the value of spontaneous polarization of the smectic phase having the decanyloxy group such as $-(CH2)_9CH_3$ was 3700 $nC/cm^2$. We could obtain the ferroelectric phase with low isotropic temperature by varying the end group at the terminals of linear side wings in the banana-shaped achiral molecules.

We present a microcapsule manufacturing technique, which contains a polymer coated white $TiO_2$ and black particles suspension as the core material for a electrophoretic display ink, via the in-situ polymerization method using melamine? formaldehyde as a wall material. The obtained capsules have $50 {\sim} 300 {\mu}m$ of the diameter range. They show a good mechanical strength and thermal and optical property. We fabricate the microcapsules to the single layer to test the black/white electrophoretic display application.

We have studied a novel vertical alignment liquid crystal cell. At initial state of a cell with rubbed parallel on top and bottom substrates, the vertically aligned LCs are twisted by $180^{\circ}$. However, after a critical voltage is applied to the cell, the configuration of the LC changes to optically compensated splay form, where the mid-director lies parallel to the substrate and thus the LC has two hybrid alignments around center.

We modified the molecular structure of urethane acrylate oligomer by varying raw materials. Also fluorination of the host polymer matrices has been found to influence the morphological and the electrooptical properties of the resulting HPDLC grating. The incorporation of fluorinated monomers in HPDLC formulation enhance the LC phase separation and improved elctro-optical properties.

We used three types of reactive diluents with different chemical structures, N-vinyl-pyrrollidone(NVP), ethyl hexyl acrylate(EHA) and hydroxyehtyl methacrylate(HEMA). It was founded that N-vinylpyrrollidone(NVP) and ethyl hexyl acrylate(EHA) based PUA with low molecular weight polypropylene glycol(PPG) at low oligomer content give high diffraction efficiency. The morphology of the resultant gratings was analyzed by using scanning electron microscopy(SEM) and Tg of the polymer matrix by dynamic mechanical thermal analysis(DMTA).

Plastic LCDs have remarkable advantages as compared to glass LCDs, but there still exist reliability issue. Regarding the reliability issue of plastic LCDs, we investigated the phenomena of dark spots that often occurred in plastic LCDs. It was recognized that dark spots are mainly caused by air bubbles that are induced from outside of LCD panel due to cell volume change with external stress and incomplete encapsulation. We have found that cell gap uniformity, spacer density and size and film deformation are important factors influencing dark spot behavior. In this paper, we discuss the phenomena and origin of dark spots in plastic LCDs

We present a novel photo-addressable electronic paper using an electrophoretic device, which can show and sustain the 2D images transferred by the UV illumination. The device consists of the organic photoconducting layer reacting with the UV illumination and the electronic ink (white particles and blue dye) dispersing in a suspending medium. The voltage impression under illuminating of UV make an image be transferred to the electrophoretic cell. The transferred image can be maintained by the bistability of the electrophoretic device.

The electro-optical characteristics of the In-Plane switching Twisted nematic (IT) mode were studied. The advantage of this mode is not only the wide viewing angle characteristics without adopting any compensation films, but also the wide cell gap error margin. The electro-optical characteristics of IT mode were evaluated by the experiments and computer simulation. In this paper, we studied the viewing angle characteristics, color-shift and response time.

Liquid crystal molecules with a new fluoro-isothiocyanate moiety were synthesized. They showed remarkably high $T_{NI}$ (>190 $^{\circ}C$), wide mesophase range of 170 $^{\circ}C$, high dielectric anisotropy (>14) and high optical anisotropy (>0.28). New LC Mixtures of the high $T_{NI}$ (>$85^{\circ}C$) was blended with the novel fluoro-isothiocyanate containing LC molecules, phenylcyclohexanes, bicyclohexanes and ester compounds. The LC mixtures show a fast speed (<10ms) of the below one frame rate in 17" WXGA panel.

We have studied cell gap-dependent electrode-optic characteristics of the FFS mode using the LC with negative dielectric anisotropy. In case of a small cell gap of 2 ${\mu}m$, the transmittance at the center of pixel and common electrodes is low due to stronger influence of surface anchoring that holds the LC to the initial state than twisting force induced by neighboring LCs. In case of a large cell gap of 4 ${\mu}m$, the influence of surface anchoring force becomes weak so that the LCs at the center of pixel and common electrode can be twisted enough by applied voltage, giving rise to high transmittance. Therefore, we conclude that the light efficiency in the device is dependent on the cell gap.

We studied the dielectric layer effect on the electro-optical (EO) properties of liquid crystal (LC) devices together with numerical simulations. Recently, it has been reported that the surface dielectric layer affects significantly the EO performances of LC microlens arrays and wide-viewing LC displays. it is found that the operation voltage of the LC device decreases with increasing the dielectric constant or with decreasing the thickness of the dielectric polymer layer. The experimental data agree well with theoretical results predicted in a simple dielectric model within the continuum formalism.

In this paper we report the optimization method of the pattern size of the electrodes in PVA LCD for the transflective mode in order to improve the optical characteristics. Moreover, we designed the electrode of PVA LCD so as to remove the driving voltage difference between transmissive mode and reflective mode. As a result, we expect very simple manufacturing process and high optical performance even if complex process such as a multi cell gap process and multi driving method are not applied

A novel geometric solution for uniform bend transition in a pi cell has proposed. In order to obtain the uniform bend transition, we applied hybrid domain structure to the edge of a LC cell by using ion-beam alignment method. As a result, we confirmed that the uniform bend transition has arisen from the edge to the center. From the proposed structure, we expect that the reliable and uniform bend transition can be achieved in the pi cell.

The bistability in a chiral-splay nematic liquid crystal cell, which is obtained by adding a chiral additive to a splay cell, is proposed. In this paper, we describe a new horizontal way of switching between the two states of the bistable chiral-splay cell, one state being characterized by a non-twisted director field with splay, the second state showing a director-field with $180^{\circ}C$ twist.

The effect of pretilt angle on viewing characteristics of an IPS cell is discussed. We calculated optical viewing angle in the IPS cell as function of pretilt angle from $0.5^{\circ}$ to $4^{\circ}$, so that we could confirm that low pretilt angle was profitable for wider viewing property. In order to verify the calculation, we made an IPS cell with very low pretilt angle by the alignment method using ion beam exposure. In the experiment, we confirmed that wider viewing characteristics can be achieved if lower pretilt angle was applied in IPS mode. And Ion beam alignment method was useful for low pretilt creation.

We present wide-viewing characteristics of a twisted nematic liquid crystal display (TN LCD) achieved by adopting dielectric surface gratings (DSGs) as alignment layers. The experimental data and the numerical analyses consistently show that the optical compensation effect inherent to the TN LCD with the DSGs greatly reduces the contrast inversion of the TN LCD.

We demonstrated a fast liquid crystal (LC) display mode based on a nonchiral smectic C LC in a twisted geometry. In this twisted nonchiral smectic C (TNSC) LC mode, the analog gray scales and wide viewing properties are achieved. The continuous gray scales in the TNSC LC mode are obtained in a dielectrically driving scheme as those in the nematic mode.

Three ring type liquid crystalline compounds having 4-alklycyclohexyl group, 1,2-difluorobenzene and phenylisothiocyanate moieties as main skeleton were designed to have negative dielectricity. However, the compounds with 2,3,2'-trifluoro-3'-isothiocyanated biphenylcyclohexane core did not exhibit the nematic liquid crystalline phase because of two conformers by interaction of isothiocyanate and adjacent fluorine atoms. Also, 4-alkyl-2,2',3'-trifluoro-3-isothiocyanated biphenylcyclohexane core was designed expecting to have uniform conformers of isothiocyanate group. In the course of developing polyimides for VA mode LCD, we synthesized alkyl-3,5-diaminobenzene efficiently with various length of alkyl chains from commercially available di-t-butyl malonate and 3,5-dinitrobenzoyl chloride as starting material.

Achiral swallow-tailed liquid crystals derived from 1,3-dialkoxy-2-propanol were prepared and their mesomorphic properties were investigated. 1,3-Dialkoxy-2-propyl swallow-tailed material showed antiferroelectric-like smectic C phase at lower temperature and in broader temperature range than the corresponding compounds with a branched alkyl group as a swallow-tail. They could serve as suitable host for antiferroelectric mixtures.

PEDOT [poly(3,4-ethylenedioxythiophene)] powder soluble in common organic solvent were synthesized by oxidative polymerization of EDOT (3,4-ethylene dioxythiophene) monomer using functional dopant, DEHSNa [sodium di(2-ethylhexyl)sulfosuccinate]. Transparent electrodes were made by spin casting of PEDOT/organic solvents on substrates. The electrode showed the transmittance < 90% in visible region and the surface resistance of> ${\sim}10^3\;ohm/{\square}$, respectively.

Most modeling about dynamic behavior of Antiferroelectric Liquid Crystal (AFLC) is limited to the hysteric characteristics of AFLC cells or thresholdless switching of frustrated AFLC cells. In this paper, domain growth of AFLC cells is modeled with extended bilayer model. When driving pulses that consist of a selection voltage, a bias voltage, and a reset voltage are applied to the AFLC cell, its dynamic behavior is simulated.

We have studied how rubbing direction affects generation of disclination line in transmissive microdisplay for $90^{\circ}$ twisted nematic (TN) mode with pixel size of $22.2{\mu}m$. The rubbing direction of bottom substrate is changed from $0^{\circ}$ to $-135^{\circ}$ with a decrease step of $45^{\circ}$, and the results show that the generation regions of the disclination line are of a smallest size in $-135^{\circ}$ direction. The results were the same although the pixel size decreased. Consequently, the use of proper rubbing direction of liquid crystal can help overcome the problems of low aperture ratio and low contrast ratio in transmissive-type microdisplays. In addition, the pretilt angle of initial liquid crystal is found to make an important contribution to generation of the disclination line.

The pi-cell [1] is known as one of the candidates for a fast response time and a good viewing angle characteristics due to a self-compensated configuration and can be a replaceable mode instead of the current TN mode and the IPS mode for moving picture in future. This paper shows the optimized condition to maintain bend state instead of splay state, which is mortal demerit for good optical properties in a pi-cell, by using the polymer stabilized method [2]. The good electro-optical characteristics are also obtained by optimizing the various factors, which are monomer concentration in a LC, UV intensity, curing time, curing voltage, and curing temperature, and by using retardation film. We use a scanning electron microscope to study the structures of the polymer stabilized polymer network in a pi-cell as a key to figure out why bend state is occurred.

We have studied the phase transition to look for molecular structure by using several different techniques for new banana-shaped liquid crystals shown in Fig. 1. Based on the similarities to recently observed fluro-contaning materials (switching involves layer structure rearrangement, increasing threshold with increasing temperature) for HC sample (where x is H), we assume that the phase C has a triclinic symmetry corresponding to the double tilted $smC_G$ Phase. The observation that the polarization peak appears at lower field ($E_o{\sim}15V/{\mu}m$) than the amplitude of the threshold ($E_{th}$) can be explained assuming a field induced $SmC_G$ - SmCP (or SmAP) transition at $E_{th}$

VA-LCDs is widely used for recent LCD productions owing to wide viewing angle characteristics with an unusually high contrast ratio. To apply for VA-LCDs, the novel homeotropic alignment materials were synthesized, which have the liquid crystal molecule as a side chain at aromatic diamine in a polyimide structure. These polyimides generated a high pretilt angle $90^{\circ}C$. In this paper, the synthesis and alignment properties of new homeotropic alignment materials will be discussed..

Three ring type LC compounds substituted with isothiocyanato group and fluoro atoms in phenyl ring were synthesized, and blended with KL-series LC mixtures for TV application of TN and IPS-mode. Clearing temperature of new LC mixtures are shown $10{\sim}35{\square}$ higher than commercial mixtures. And response time was also improved $10{\sim}20%$ faster than conventional LC mixtures.

In the paper, we have investigated the reflective cholesteric display based on the polymer stabilization. The bistability in the polymer stabilized cholesteric texture(PSCT) films was observed and wider viewing angle was achieved due to imperfect planar texture.

We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.

We developed a new device structure using anisotropic phase sepraration from liquid crystals (LCs) and polymer composite materials for flexible display applications. In the device, the LC molecules are isolated in pixels where LCs are surrounded by polymer layers. These devices show very good mechanical stability against external pressure. The electro-optic characteristics and the mechanical stability of the devices are discussed in view of the flexible display applications.

We have presented in the paper preliminary results on physical characteristic parameters of a photopolymer LPPF 301 CP. The weak azimuthal anchoring energy (${\sim}5.0{\times}10^{-6}J/m^2$) of a photopolymer was measured by using a simple optical method. High pretilt up to $30^{\circ}$ has been achieved in the photoaligned cell by irradiating an obliquely incident UV light.

The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.

In order to achieve high-resolution and large-size displays, inspection technology is necessary and important. It is a powerful utility for process and yield improvement for the high valued panel realization. We indicated the challenge of advanced panel manufacturing on inspection ability and throughput. We also investigated the method to judge laser-crystallizing energy by inspection technology. Finally, the total defect number and critical killer defects were classified and discussed in this work.

Integrating the driver circuitry directly onto the glass substrate would be one of the advantages of polycrystalline Si (poly-Si) TFT-(LCD). Low-temperature poly-Si TFT(LTPS) is well-suited for higher-definition display applications due to its intrinsically superior electrical characteristics. In order to improve LTPS electrical characteristics, currently the excimer laser-induced crystallization (ELC) processes and sequential lateral solidification method were developed. Grain size of the poly-Si is mainly affected by beam pitch and energy density. Key parameter for making a larger poly-Si using excimer laser annealing(ELA) and increasing a throughput is due to increase in beam pitch and energy density to a certain degree. Furthermore, thin $SiO_{2}$ capping is effective to suppress the protrusion of the poly-Si thin films and to reduce the interface state density. From the ELA process, we are able to control grain size by varying different parameters such as number of shots and energy density.

We reported the a-Si crystallization using a XeCl excimer laser annealing on the plastic substrate. The poly-Si film is able to grow in the low temperature and light substrate like a plastic. For the preparation of sample, substrate is cleaned by organic liquids. The film of $CeO_{2}$ layer as the buffer layer was grown by sputtering methods. After a-Si film deposition using ICPCVD, the film was crystallized by XeCl excimer laser. In this paper, we present the crystallization properties of a-Si on the plastic substrate

The parasitic capacitance between the high voltage electrodes and the backlight housing causes lowering lamp current, electric power leakage, and leading to lower brightness and efficiency in a multi-lamps backlight. In this study a new center balance swing operation method is introduced to be minimizing those housing effects.

We proposed new current source and mirror circuits insensitive to $V_{th}$ variation of poly-Si TFTs. The proposed circuits have been verified by SPICE simulation using poly-Si TFT model. The error currents of the proposed current source and current mirror circuits caused by $V_{th}$ variation reduced less than 6.6% and 4.5% of that of conventional ones, respectively.

The electrical and optical characteristics of the cold cathode fluorescent lamps (CCFL) were measured and investigated under the wide ambient temperatures ranging from $-30^{\circ}C$ up to $+100^{\circ}C$. The highest luminous efficiency of the CCFL of 55 lm/W was obtained at the ambient temperature of $50^{\circ}C$.

Organic thin-film transistors were fabricated using pentacene as an active electronic material. Device characteristics are improved with increasing the deposition rate of pentacene. It is observed that the deposition rate influences on the interface properties between pentacene and polystyrene, and the molecular ordering of pentacene film. In this paper, we report the effects of the deposition rate of pentacene film on the device performance.

Using stacked organic gate insulators and active layer of pentacene deposited at elevated temperatures, pentacene-based organic thin-film transistors(OTFTs) with improved electrical characteristics have been fabricated. Stacked PVP(Polyvinylphenol)-polystyrene gate insulators could compensate the demerits and take advantage of the merits of each other [1]. Also, for the better device performance, moderate substrate heating and high deposition rate of pentacene active layer was adopted [2, 3].

We studied the crystallization behavior of LP-CVD a-Si film using UV pulsed laser. With increase in the shot number of irradiation by fixing its energy density, poly-Si film having a large grain size of $0.5 {\mu}m$ was obtained. By analyzing the crystallized Si films using optical analysis such as Raman spectroscopy or AFM technique etc., conspicuous correlation between the grain size and the resultant film properties such as the stress or the roughness has been found. With the increase in the energy density or the shots number of laser, remarkable grain growth occurred following to the roughness formation corresponding to the increase in the tensile stress.

In this paper, production of TFT-LCD adopting Cu electrode, in spite of low resistivity, which was not commercially applied to TFT LCD products because of processibility, reliability problems etc. was mentioned. Based on the test result of etch and strip process of Cu electrode, the TFT device using Cu material shows the same characteristics as the conventional TFT devices. We describe the realization of a 20.1" UXGA model which was firstly applied to Cu electrode.

Super In Plane Switching (S-IPS) technology is applied for large TFT-LCD panels used in TV applications. It has a lot of advantages in comparison to the alternative, VA technology. S-IPS shows excellent viewing angle properties and fast response time between intermediate gray levels. If the performance parameters which describe the actual visual performance are considered, S-IPS is much more advantageous.$^{1)}$ However, it shows relatively low contrast ratio in diagonal direction compared to viewing angle characteristic in upper/down direction in S-IPS. In order to compensate the relatively low diagonal contrast ratio, a newly designed optical film was applied and the truly wide view angle of a S-IPS TW(True Wide)-IPS) was achieved. Our newly developed 30-inch TFT-LCD panel reveals TW-IPS that is optimized for TV application

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

The reliability of TFT, crystallized by sequential lateral solidification (SLS) technology, has been studied High current damage is characterized by high gate bias (-20V) and drain bias (-10V). It is found that performance of SLS TFTs is enhanced by high current stress up to 300 sec of stress time for 20/8 (W/L) N-TFT. After that, TFT performance is degraded with the increase of the stress time. It is speculated from the experimental data that SLS TFTs initially contain a number of unstable defect states. Then, the defect states seem to be cured by high current stress.

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

We report the suitable SLS (sequential lateral solidification) as a function of laser intensity. Precursor film is changed from 50nm to 100nm and is deposited on glass substrate by PECVD. We can find the suitable SLS length by changing the mask size. In this paper, we present the well-defined grain growth conditions as a function of laser intensity.

We report on a surface planarization process that produces more planar surface than previous sequential lateral solidification crystallized poly silicon films. By applying the single shot laser irradiation with optimum energy density ($(817mJ/cm^{2})$ on the ridge area after SLS crystallization, the ridge height can be decreased.

This paper describes two kind of new concept for low power consumption for small area TFT-LCDs. First, the proposed analog buffer could reduce the static current by adopting new scheme. Second, new data driver structure reduced DC power consumption by reducing the number of operational amplifier (op-amp). As simulation results of Hspice, the quiescent current of proposed analog buffer is less than $0.8{\mu}A$ and the DC power consumption is reduced about $40{\sim}50%$ compared with conventional ones.

An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

In applying LCD to TV application, one of the most significant factors to be improved is image sticking on the moving picture. LCD is different from CRT in the sense that it's continuous passive device, which holds images in entire frame period, while impulse type device generate image in very short time. To reduce image sticking problem related to hold type display mode, we made an experiment to drive LCD like CRT. We made articulate images by turn on-off backlight, and we realized the ratio of Back Light on-off time by adjusting between on time and off time for video signal input during 1 frame (16.7ms). Conventional CCFL (cold cathode fluorescent lamp) cannot follow fast on-off speed, so we evaluated new fluorescent substances of light source to improve residual light characteristic of CCFL. We realized articulate image generation similar to CRT by blinking drive. As a result, reduced image sticking phenomenon was validated by naked eye and response time measurement.

LGP (Light-Guide Panel) of TFT-LCD Backligh/Frontlight is one of the major components which affect on the product quality of LCD. Since the brightness distribution of LGP is sensitive to the process error in manufacturing, the optical characteristics such as reflection and absorption of LGP pattern should be modeled including the process error. LGP is developed by using the fast and reliable design technology, which uses the concept of the inverse-design, makes the model on the characteristics of uncertainty in the manufacturing process, and designs the dispersion pattern analytically without try-and-error by using an artificial intelligence. The PEA(Process-Error-Adaptive) design gives the best solution in handling the process error. The offset of target in feedback system makes such the best pattern design possible that the brightness distribution is nearly same (more than 90%) with target in regardless of the miscellaneous errors in mass production. The present design method has been also applied to frontlight and multi-side-lamp(eg., four-side-four-lamp) backlight.

We reported the result of driving PDP's in selective erase scheme and three wall charge states. Compared to the selective write driving scheme, the selective erase scheme achieved flicker free half-ON state with much simpler driving waveforms than the selective write scheme. We believed that this improvement was possible since the cells entering the address period with enough wall charges to modulate easily with.

We made an optimization effort on driving waveforms for the Quantized Memory Addressing (QMA) in selective write mode of operation. It was necessary to add long ramp type erase pulses after the total write pulse and the sustain period to obtain stable intermediate luminance discharges. Furthermore, fast rising ramp type total write as well as two step addressing scheme were adopted for better discharge stability.

The wall charge is major factor to determine the discharge characteristics. The minimum sustain voltage related to the wall charge decay were investigated as a function of aging time in AC plasma display panel. For the long time scale, the wall charge decay time is dependent on the aging time. The inverse time scale of the wall charge decay has the maximum value at around 3 hours aging time and then fell down.

We have suggested several plasma display panel (PDP) cell structures for high luminance and low power consumption by our two-and three-dimensional fluid simulation codes. Generally, to improve luminous efficiency and discharge efficiency, it is known that it is lucrative to use long discharge path and to form low electric field. However, the problems are how to implement them effectively in the small PDP cell. Therefore, unlike conventional model, we suggest Front Three Electrodes (FTE) model. In this model, we tried to make long and V-shaped discharge path by geometry changes and driving pulse variations. Consequently, from our simulation results based on the model above, luminous efficiency has improved about 2.6 times.

It is often desirable that manufacturers and users can convert the reference white of display into the preferred color temperature by controlling the color temperature that is one of representative color characteristics of a light source. Accordingly, this paper proposes an efficient method of color compensation for displaying the uncalibrated video signal in PDP-TV and is also shown to be successfully coupled with flexible color temperature conversion based on the signal processing technique.

In AC plasma display, it is very important to quantify the wall voltage induced by the wall charge accumulated on the dielectric surface. If we know the quantities of the wall voltage in each period of every sequence; reset period, address period and sustain period, then it helps us to design the optimal driving waveform for high efficiency plasma display. We develop a new method to measure the wall voltage with VDS (Versatile Driving Simulator) system. From this method the wall voltage induced by a wall charge profiles just after the reset discharge of every cells in plasma display panel can be investigated and analyzed successfully. It is noted that the wall voltage profiles are influenced by the space charge and then they are stabilized as time goes by. It is also noted that both the remaining wall charge at the previous sequence and space charges contribute to wall voltage quantities just after the reset discharge. It is noted that the wall charges contribute dominantly after a few hundreds microseconds, while the space charges have been decayed within 100 ${\mu}s$ just after the reset discharge.

A new driving method is proposed to reduce the address period. The scan time of new driving method overlaps with the next scan time during the discharge lag time. Thus, without reducing the address pulse width and the scan pulse width, the new addressing method can reduce the address period. The results show that the scan time of about 100ns ${\sim}$ 300ns can be overlapped without the misfiring,.

Dual coding technique is one of the popular techniques to reduce the dynamic false contours on PDP. Subfield pattern is a key factor affecting the performance of dual coding technique. In this paper, an optimum subfield selection method based on genetic algorithm is proposed. Two types of string structures are defined to account for all the possible configurations of the dual coding subfield patterns. Genetic operators are proposed for optimization of dual coding subfield pattern. Quantitative measures to describe degrees of dynamic false contours and checkerboard patterns are defined. Experimental results indicate that dual coding subfield pattern that is determined by proposed method reduces dynamic false contours and checkerboard patterns.

The addressing time should be reduced by modifying cell and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the relationships between of discharge cell structure and addressing time in ac PDP are investigated. It is found out that the addressing time was decreased with decreasing gap of ITO electrode and thickness of transparence dielectric layer on the front glass. The decrease rates were 4% per $10{\mu}m$ and 4% per $5{\mu}m$, respectively. Also in cases of decreasing height of barrier rip and thickness of white dielectric layer on the rear glass, addressing times were at the rate of 4% per $10{\mu}m$ and 4% per $2{\mu}m$, respectively.

We have compared 2-D and 3-D fluid simulation results of alternating current plasma display panel (AC-PDP) cell with experimentally measured two kinds of excited Xe species $Xe^{\ast}(^{3}P_{1})$ and $Xe^{\ast}(^{3}P_{2})$ characteristics. Although direct experimental access and diagnostics of the discharge in a PDP cell is problematic due to the small cell size, some of experimental technologies have made it possible to diagnose the behavior of excited Xe species [1, 2]. The simulation shows the similar characteristics to the experimental results in the excited Xe species density distribution and the number of excited Xe atoms in anode and cathode region. In certain cases, we obtained the arch-shaped discharge path between two sustain electrodes due to the additional pulse applied to address electrode analogous to experiment. This long path discharge induced higher luminous and discharge efficiency compared to the standard case.

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) and infrared(IR) rays in surface discharge AC-PDP with Ne-Xe mixture gas. The influence of Ne-Xe gas-mixture ratio on resonance state $Xe^{\ast}(3P_{1})$ and exited state $Xe^{\ast}(3P_{2})$ has been investigated. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828 nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The electron temperature and plasma density have been experimentally measured from the center of sustaining electrode gap by a micro Langmuir probe in AC-PDPs. The plasma density from the center of sustaining electrode gap are shown to be maximum value of $9{\times}10^{11}cm^{-3}$, where the electron temperature is about 1.6 eV in this experiment

The electron temperature and plasma density in coplanar alternating-current plasma display panels (AC-PDPs) have been experimentally investigated by a micro Langmuir probe and the high speed discharge images in this experiment.

An EMI emission of 42" AC-PDP panel is studied in this paper. First, the EMI emission level is roughly estimated using both simple electric dipole type and magnetic dipole type radiator model. The value of current required for estimation has been obtained from Fourier Transform of the measured current in time domain. Second, we investigate which type of EMI radiation is dominant by FEM calculation of the wave impedance. The result shows that electric dipole type radiation is dominant EMI source.

We measure the spatiotemporal wall charge distributions on sustain and address electrodes during reset period in an ac PDP cell using the longitudinal electro-optic amplitude modulation method. We apply several reset waveforms like as ramp, exponentially growing and high voltage pulse, and compare the wall charge characteristics on address electrode as well as sustain electrodes for each reset waveforms.

We have investigated the electro-optical characteristics of image sticking in AC PDP. Although Image sticking is one of major factors to determine display quality in AC PDP, so far, it has not being reported why it is occurred and how we can prevent it. In this experiment, we have analyzed the effect of MgO protective layer and phosphor on the image sticking and we have measured the difference of firing voltage, brightness and discharge current between sticking image and normal image in AC PDP. As a result, Phosphor degradation is a more major factor than MgO protective layer and the firing voltage of gas discharge in sticking image is higher than that of normal discharge.

We have experimentally investigated the influence of wall charge configurations prior to addressing discharge on dynamic margin in AC plasma display panel. In this experiment, we have analyzed the quantity and polarity of wall charge accumulated on the front and rear dielectrics just prior to the addressing discharge under the conventional driving sequence.

In AC PDP, since charges generated by gas discharge are accumulated on the dielectric. The dielectric is a major factor to determine cell capacitance and its memory effect is a play an important role in PDP driving. In this experiment, we have investigated the electro-optical characteristics with dielectric thickness and we have analyzed wall charge and wall voltage by Q-V energy diagram. The dielectric thickness was varied from 20 um to 50 um. As results, according to the dielectric thickness increase,cell capacitance and power consumption is reduced.

The mechanical properties of barrier ribs in PDP require quantification in order to control the defects and to increase the yield in the process. Several different types of rib materials were tested for hardness (H) and Young's modulus (E) with a microtip indenter (Berkovich type). For the assessment of fracture toughness of the rib, a macro Vikers indenter was used. The materials with 30wt% of filler were fired at between $490^{\circ}C$ and $570^{\circ}C$. As a result, the composite became fully densified at $520^{\circ}C$, which is near the T s (Littleton softening point) of glass frit. As the filler content increased, the fracture toughness also $(K_{IC})$ increased in the range of 0.60 to 2.63 $MPa{\cdot}m^{0.5}$ after sintering at $550^{\circ}C$. The results suggest that the application of a nano-indenter would be useful for testing the mechanical properties of barrier ribs.

Several methods are available for the fabrication of electrode pattern for the plasma display panel(PDP) including screen printing and photolithographic method. Piezo type ink-jet printing method is considered to the method of choice for electrode patterning in manufacturing of PDP. Both silver ink and absorbent layer paste formulation were developed for ink-jet printing of electrode pattern. The ink-jet printing of silver electrode with preformed absorbent layer was especially suitable for the patterning of address electrode for high resolution PDP.

For ac Plasma Display Panel (PDP), the lifetime should be guaranteed over 30000 hours. The lifetime is correlated with the deterioration characteristics for the weakest element in ac PDP. In this paper, in order to improve the lifetime of ac PDP, a short-term relative lifetime test method for a given element in the ac PDP is proposed. By this method, the effects of MgO thin film thickness and deposition rate on the relative lifetime of ac PDP are investigated. The relative lifetime is increased with MgO thin film thickness but it was almost saturated over 5000. The relative lifetime decreased with increase in the MgO deposition rate and increased with Xe% in the working gas of He+Ne+Xe..

In this study, water jet etching of aqueous green tape was attempted for processing barrier rib of plasma display panel. This process combines 1) chemical etching between water and aqueous based binder in the tape and 2) mechanical erosion by water jet. Effects of etching parameters such as pressure, temperature and aqueous binder content on the morphology of barrier ribs formed were investigated. The results demonstrated a possibility of processing barrier ribs by water jet etching.

Closed-cell type barrier ribs of PDP were formed by capillary molding process using molds prepared by inclined UV lithography process. Various types of molds with different inclined angles were prepared by patterning SU-8 thick photoresist film and casting with PDMS. The ribs with various type cells were successfully formed by the process. The effects of inclined angle on the distortion of barrier ribs during sintering were investigated. The results indicated that the barrier ribs with a draft angle and dimensional change does not affect the distortion of the barrier ribs during sintering, suggesting that the closed-cell must be isotropic in sintering shrinkage.

To synthesize $Gd_{2}O_{3}:Eu$ phosphor powder of nano size and high luminescence efficiency under UV (ultraviolet) and VUV (vacuum ultraviolet) light, organic additives such as citric acid and ethylene glycol and $Na_{2}CO_{3}$ flux were introduced in large-scale spray pyrolysis and critical conditions for forming nano-sized particles were investigated. The $Gd_{2}O_{3}:Eu$ phosphor particles prepared from solutions with organic additives such as citric acid and ethylene glycol had micron size and spherical shape. However, the particles prepared from polymeric precursor solution with $Na_{2}CO_{3}$ flux had nano size and non-aggregation characteristics. The as-prepared spherical particles with micron size turned into nano-sized particles during post-treatment by recrystallization process. The nano-sized $Gd_{2}O_{3}:Eu$ phosphor particles showed higher brightness than the commercial $Y_2O_3:Eu$ phosphor product under both UV light of 254nm and VUV light of 147 nm.

Inside of working PDP, there exist highly reactive conditions in the gap between two glass panels. MgO layer and phosphor have been investigated as a function of discharge and temperature. A drastic reduction in carbon impurity was observed on the surfaces after discharging and heat treatment. Carbon composition on the MgO and phosphor is a dominant factor for their instability

The secondary electron emission $coefficient({\bullet})$ of vacuum annealed MgO films has been investigated by ${\bullet}$ -focused ion beam(${\bullet}$ -FIB) system. The vacuum annealed MgO films have been found to have higher ${\bullet}$ values than those for as-deposited MgO films for Ne+ ion. Also it is found that the ${\bullet}$ for air-hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

Application of inorganic silica-neodymia alloy films grown by sputtering technology to the dielectric layer of plasma display panel (PDP) is presented. The experimental results reveal that dielectric constant of the alloy films increases with neodymia concentration. Also, the alloy films act as band rejection color filter owing to sharp absorptions originating in the intratransition within the 4f shell of the $Nd^{3+}$ ion. In the optical band pass region, the transmittances of the alloy films show higher than those of commercial glass-like dielectrics. As a result, the luminance of PDP device with the alloy dielectric layer is higher than that of device with conventional dielectrics, indicating wider color gamut and higher color purity.

The sintering behavior of $BaO-B_{2}O_{3}-ZnO$, which is Pb-free glass-ceramic system, was examined as functions of the composition and the amount and particle size of $Al_{2}O_{3}$ filler. Different kinds of modifiers were added and $Al_{2}O_{3}$ fillers with different particle sizes ($1.5{\mu}m$ and $4.5{\mu}m$) were added. The glass frit-filler composites were sintered in the temperature range $520{\sim}580^{\circ}C$. X-ray diffraction results revealed that some of the composites crystallized during sintering. Dielectric constant and thermal expansion coefficient the glass-ceramics were analyzed.

Sn-doped $In_{2}O_{3}$ (ITO) thin film is one of the materials widely on research not only in the academic fields but also in industrial fields because of their transparency, high conductivity and good adhesion characteristics on substrate. ITO thin films are usually preferred oriented to one of the (222), (400), and (440) planes during crystallization process, which is dependent on processing variables. The preferred orientation affects electrical, optical and etching properties of the films. In this study, thin films of preferred oriented in different orientation were fabricated by controlling processing variables. The crystallization behavior, grain size, surface roughness, transparency and electrical properties of the thin films in different orientation were examined.

Indium tin oxide (ITO) thin films were deposited by RF-magnetron sputtering method and the crystallization behavior of the films with no external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed.

With a new PDP transparent dielectric layer formation technique, we were able to make dielectric layer with high transmittance by using dry film type dielectric material. We optimized dielectric pastes for dry film and they showed good process properties in lamination , drying and firing.

In the present study, the electroless plating method was applied instead of the sputtering as a formation method of metallic bus electrodes. No additional blackening step is needed in this method since this process provides a metallic seed layer with black color by a single step. The parameters which affects color and morphology of the metallic seed layer in the electroless plating solution were investigated

By using vacuum in-line driving and photoluminescence measuring method, we have observed the electrical and optical characteristics of the vacuum in-line sealing technology and analyzed the effect of the base vacuum level before filling the plasma gas. In the case of base vacuum level of $1{\times}10^{-3}$torr, the firing voltage of a 2-inch diagonal PDP panel was ranged from 310 to 345V depending on the plasma gas pressure of 200 to 300torr and luminous efficiency was ranged from 0.0227 to 0.0367 lm/W depending on the input voltage level of 330 to 225V. While, in the case of $1{\times}10^{-6}$, the characteristics were significantly improved. As a results, the firing voltage was ranged from 295 to 318V and luminous efficiency was from 0.0278 to 0.0451 lm/W.

We have synthesized some phosphors in the system $CaO-Y_{2}O_3-Al_{2}O_{3}$ by combinatorial polymerized-complex method. Composition and synthetic temperature of phosphors in the liblary was screened from the emission intensities of individual samples under VUV excitation. In $Tb^{3+}$-activated $CaO-Y_{2}O_3-Al_{2}O_{3}$, green phosphors showing good intensity were found to be $CaYAl_{3}O_{7}$, $CaYalO_{4}$, $YAlO_{3}$, $Y_{3}Al_{5}O_{12}$, $Y_{4}Al_{2}O_{9}$, $Ca_{3}Al_{2}O6$.

The main objective of this investigation is to improve the photoluminescent of $Zn_{2}SiO_{4}:Mn$ phosphors prepared by the sol-gel technique. We try to use adding a new co-dopan such as Cr and Ti. The calcination temperature of sol-gel technique(1100 $^{\circ}C$) was lower than that of the solid state reaction (1300 $^{\circ}C$). Under 147nm excitation, the maximum emission intensity was obtained when the concentration of Cr and Ti was 0.1mol% with respect to $Zn_{2}SiO_{4}:Mn$. In order to study the effect of co-dopant, the content of Mn and the ratio of water to TEOS were fixed at 2mol% and 36:1, respectively.

We investigated a field emission property of CNTs grown on pre-treated substrates by $H_{2}$ plasma etching method in vacuum chamber (<${10^{-7}}$ Torr). To improve the emission characteristics, various catalysts and buffer layers were used. The morphology and density of catalyst layer was controlled by the different plasma pre-treatment conditions, resulting in the control of the growth characteristics of CNTs.

After multi-walled carbon nanotubes (MWNT) powder was crushed with ball milling process, it was mixed with organic vehicles. And then CNT paste was printed on ITO coated glass substrate. The field emission characteristics of CNT pastes fired in air atmosphere was better than that of CNT paste fired in Ar ambient due to less organic residues after firing.

CNT paste was fabricated by mixture of multi-walled carbon nanotubes (MWNT) powder, organic vehicles and inorganic binder. Then firing process was performed at different temperature under air and $N_{2}$ atmosphere. It was found that emission property of CNT paste was changed by firing temperature and time due to interaction between remained resins and CNT powder. We obtained good emission property from CNT paste treated at $350^{\circ}C$ for 10 min.

Carbon nanotubes (CNTs) were grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using mixture gas of $H_2/CH_4$ at low temperature of 500 $^{\circ}C$. Average diameter of CNTs could be easily controlled by $H_2$ plasma pretreatment time before CNTs growth. The turn-on voltages of CNT emitters were varied from 3.5 $V/{\mu}m$ to 9 $V/{\mu}m$ according to the hydrogen pretreatment conditions. The close relationship between electron emission characteristics and pretreatment time indicates that pretreatment condition can be a key process parameter in CNTs growth for field emission displays..

Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

Multi-walled carbon nanotubes (CNTs) were synthesized on glass substrates in the different ramp-up heating ambient of vacuum, He, Ar, and $N_{2}$ by thermal chemical vapor deposition. CNTs with higher crystallinity were developed in the buffer gases with faster growth rates than in vacuum. Field emission characteristics were strongly related to the relative position of CNT emitters to the cathode electrodes. The areal-spread emission and instability were overcome by locating the emitters far away from the edges of cathode electrodes. The electrical conditioning of emitters improved their emission uniformity over a large area although it decreased the emission current. This study also discussed the long-term stability of CNT emitters.

Vacuum tube arrays (VTA) with a submicron dimension were fabricated by using anodic aluminum oxide (AAO) nano-templates. The field emission characteristics of Ni nanowires show a turn-on voltage in the range of 11.0-14.0 V and a field enhancement factor in the range of 560-2790. The distance between the tips of Ni nanowires and the anode was much smaller than that between the tips and the anode of conventional designs.

We have fabricated a carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size by using screen printing method and vacuum in-line sealing technology. The sealing temperature of the panel was around 390 $^{\circ}C$ and the leak test was carried out for 72 hrs after sealing process. When field emission properties of fabricated and sealed CNT FED panel were characterized and compared with those of unsealed panel which was located in vacuum chamber of vacuum level similar with the sealed panel, the sealed panel showed more improved field emission properties.

Blue light-emitting polyfluorene derivatives, poly[9,9-bis(4'-n-octyloxyphenyl) fluorene] (PBOPF), poly[9,9-bis(2'-ethylhexyl)]fluorene (PBEHF) and copolymers of PBOPF and PBEHF were synthesized through Ni(0) mediated polymerization and their light-emitting properties were investigated. The PBEHF thin film showed significant excimer band in PL spectra after thermal annealing at 100 $^{\circ}C$ for 2h. But no significant excimer emission was observed in the PL spectra of the PBOPF and the copolymers even after thermal annealing suggesting that BOPF unit effectively suppressed the excimer emission.

A new class of light-emitting poly(p-phenylenevinylene) (PPV) derivatives. poly(9,9-di-n-octyfluorenyl- 2,7-vinylene) (PFV) and its PPV copolymers, poly[(9,9-di-n-octylfluorenyl-2,7-vinylene)-co-(1,4-phenylenevinylene)]s [Poly(FV-co-PV)s] was synthesized through Gilch polymerization, and their light-emitting properties were investigated. The copolymers showed almost the same UV absorption and PL emission as the PFV homopolymer, regardless of copolymer composition. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the poly(FV-co-PV)s showed 10 times higher efficiency than the devices constructed from the PFV homopolymer. This higher efficiency is possibly a result of better charge carrier balance in the copolymer systems due to the lower HOMO level (${\sim}5.5$ eV) of the poly(FV-co-PV)s in comparison to the PFV (${\sim}5.7$ eV).

We propose a new pixel structure for Active Matrix OLED (AMOLED). The proposed pixel structure can display full color images by compensating threshold voltage (Vth) variation of driving TFTs. And we obtain an improved contrast ratio(C/R) of higher than 600:1

A bilayer is used as an anode electrode for organic electroluminescent devices. The bilayer consist of an ultrathjn ZnO layer adjacent to an hole-transporting layer and an Indium tin oxide(ITO) outerlayer. We tried to bring low the barrier between the devices as deposited ZnO films on ITO substrates. We fabricated the organic EL structure consisted of Al as cathode, $Al_{2}O_{3}$ as electro transport layer, Alq3 as luminously layer, triphenyl diamine(TPD) as hole transport layer and ZnO(l nm )/ITO(l50 nm) as anode. The result of this experiment was not good compared with the case of using ITO, Nevertheless, at this structure we obtained the lowest turn-on voltage as the value of 19 V and the good brightness (6200 $cd/m^{2}$) of the emission light from the devices. Then the quantum efficiency was to be 1.0%.

We report the electroluminescence properties of single- and multi-layer electroluminescence devices using PtOEP phosphor. Weak emission bands with peaks at 540 and 567 nm are observed in the former and latter devices, respectively, besides the well-known 648 nm PtOEP emission. The 540 nm emission increases in proportion to the third power of current density, while the 648 nm emission band increases linearly. Discussion is made on a reason for a much smaller luminance of PtOEP compared with $Ir(ppy)_{3}$ phosphor.

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

Chemical vapor condensation (CVC) reactor was investigated for the deposition of Parylene-N thin films as the passivation layer for organic light emitting diodes (OLEDs). Several gas inlet manifold designs were tested to improve the deposition rate and its uniformity, and it was found that proper inlet design is crucial to get the desired film properties. Process characterization was also performed with the modified inlets to optimize the process variables.

Three-color organic light-emitting diodes (OLEDs) of metal-semiconductor-metal (MSM) structure have been favricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as hole injection layer(HIL). The mMTDATA is shown to be an effective hole injecting material, in that the insertion of mMTDATA greatly reduces the roughness of anode surface and improves the device performance. Red, green and blue OLEDs were fabricated, and their color coordinates in CIE chromaticity were found to be (0.600, 0.389), (0.240, 0.525), and (0.171, 0.171), respectively. The luminous efficiencies of the fabricated OLEDs were 1.4 lm/W at 106 $cd/m^{2}$ for red, 1.4 lm/W at 100 $cd/m^{2}$ for green, and 2.0 lm/W at 104 $cd/m^{2}$ for blue.

Doping a small amount of a phosphorescent dye into an organic light-emitting diodes(OLED) can lead to a significant improvement in the device properties. The fluorescent host materials like TAZ, CBP have been used, but have a problem of rapid decay of efficiency at high current densities. To alleviate this problem, phosphorescent host was introduced. The whole configuration of OELD fabricated was ITO/a-NPD(50nm)/Zn $cluster:Ir(ppy)_{3}(30nm)/BCP{(10nm)/Alq_{3}(20nm)$ /Al:Li. The OLED showed high luminance (> 50,000 $cd/m^{2}$ ) and external efficiency(5.7%). At higher current densities, rapid decay of external quantum efficiency or host emission, which was frequently observed in the fluorescent host system, were not observed.

We report a novel method of activation-annealing, named as induction annealing (IA). IA is realized by applying alternating electric field induced by alternatingmagnetic filed applied to the sample. We observed the enhanced kinetics of dopant activation by using IA.

In order to enhance performance, stability, and brightness of inorganic blue-light emitting EL device, barrier layer structure and pulsed laser annealing(PLA) treatment were introduced. The barrier layer structure was utilized for improving brightness of the device and instead of thermal annealing, pulsed laser annealing process was used. From this study, optimum barrier layer thickness and number of pulsed laser irradiation are established.

Novel red organic electroluminescent (EL) dye, RED was developed for an application to the emission layer of EL device. Well known red material DCJTB was also used for comparison. Two kinds of devices were fablicated; one is ITO/ CuPc / TPD / 0.5% RED-1 in Alq3/ Alq3/ Li20/ Al and the other is ITO/ CuPc /TPD / 0.5% DCJTB in Alq3/Alq3/ Li20 / Al. External quantum efficiency of the EL device with RED was two times higher than that of the device with DCJTB. The maximum EL peak was detected at 635nm in the RED EL device.

The effect of conducting carbon layer on the performance of AC thin film EL display was examined. It was found that incorporation of small amount of carbon nano-tube and conducting additive greatly improve the luminance of the inorganic EL compared to the one with only conducting carbon black.

We fabricated composite materials as a pellet structure with the various kinds of inorganic material powder. The composite materials were deposited onto the plastic film by the electron beam evaporation and water vapor transmission rates (WVTRs) were measured by the MOCON facility. As a result of WVTRs, the composite materials had lower WVTR value than any other inorganic materials. So, these films were proposed to protect the organic light emitting device (OLED) from moisture and oxygen. We can consider that the composite thin-film is one of the more suitable candidates for the thin-film passivation layer in the OLED. And, we are processing the XRD, XPS and EPMA to analyze the property of the composite material. We will also analyze properties of the current-voltage and luminescence for lifetime both the composite thin-film passivated OLED and non-passivated OLED.

Aluminium-doped ZnO (ZnO:Al) films were grown by atomic layer-controlled deposition on glass substrates at temperature of 200 $^{\circ}C$ using diethylzinc($Zn(C_{2}H_{2})_{2}$; DEtZn), water($H_{2}O$) and trimethylaluminium ($Al(CH_{3})_{3}$; TMA) as precursors. As the cycle ratio of TMA to DEZn(TMA/DEZn) increased, the resistivity of the films decreased and the roughness increased. In the case of TMA/DEZn pulse ratio of 1 to 10, the film had a resistivity of $9.7{\times}l0^{-4}{\Omega}{\cdot}cm$ and a roughness of 2.25nm(rms), while in the case of only DEZ injection the film had a resistivity of $3.5{\times}10^{-3}{\Omega}{\cdot}cm$ and a roughness of 1.07nm(rms)

In order to realize full color display, two approaches were used. The first method is the patterning of red, green, and blue emitters using a selective deposition. Another approach is based on a white-emitting diode, from which the three primary colors could be obtained by micro-patterned color filters. White-light-emitting organic light emitting devices (OLEDs) are attracting much attention recently due to potential applications such as backlights in liquid crystal displays (LCDs) or other illumination purposes. In order for the white OLEDs to be used as backlights in LCDs, the light emission should be bright and have Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.33, 0.33). For obtaining white emission from OLEDs, different colours should be mixed with proper balances even though there are a few different methods for mixing colors. In this study, we will report a white organic electroluminescent device using exciton diffusion length concept.

For the insulator of inorganic thin film electroluminescent (TFEL), devices AlON combined with TiON was used and it exhibits higher luminance than AlON as well as $Al_{2}O_{3}$ insulator. Furthermore, using AlON with TiON film show better stability and higher luminance than that with $TiO_{2}$ grown by conventional atomic layer deposition (ALD) for the application of the insulator of ZnS:Mn TFEL device.

We report a novel observation of reversible color adjustability in polymer light-emitting diodes (PLED) fabricated with a single material. When we controlled applied bias of PLED, we found that the devices change their emission color. Moreover, this process is reversible. This result exhibits a new possibility of voltage-tunable color PLED.

We synthesized and characterized new fluorene-based polyquinoxalines with ether-linkage in the main chain, which have luminescent properties. Cyclic voltammetry reveals that these polymers have a low-lying LUMO and HOMO energy levels. Therefore, the polymers would be attractive candidates for electron-tansporting or hole-blocking materials in LEDs.

We report the fabrication and the characterization of white organic light-emitting devices consisting of a red-emitting layer of a new DCM derivative doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$) and a blue-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi). The device structure is ITO/PEDOT:PSS/${\alpha}-NPD$ (50 nm)/${\alpha}-NPD$:DCM (5 nm, 0.2 %)/DPVBi (x)/Alq3 (40 nm)/LiF (0.5 nm)/Al. The electroluminescence (EL) spectra consist of two broad peaks around 470 nm and 580 nm with the spectral emission depending on the thickness of DPVBi. The device with the DPVBi thickness of about 20 nm show a white light-emission with the Commission Internationale d'Eclairage(CIE) chromaticity coordinates of (0.33, 0.36). The external quantum efficiency is 2.6% and luminous efficiency is 2.0 lm/W at a luminance of 100 $cd/m^{2}$. The maximum luminance is about 30,270 $cd/m^{2}$ at 13.9 V.

We report efficient white organic electroluminescent devices consisting of a blue-emitting layer of 9,10-bis[(2",7"-di-t-butyl)-9',9"-spirobifluorenyl]anthracene (TBSA) and a red-emitting layer of 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8-yl)vinyl]-4H-pyran) (DCM2) doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$). The device shows the CIE coordinates of (0.32, 0.37). The external quantum efficiency is about 3.4 % and the luminous efficiency is about 3.9 lm/W at luminance of 100 $cd/m^{2}$. The maximum luminance is about 45,400 $cd/m^{2}$ at 11.5 V.

The electroluminescence (EL) properties were studied in organic light-emitting diodes with a red fluorescent dye, 4- (dicyanomethylene)- 2- tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)- 4H- pyran (DCJTB) doped into tris-(8-hydroxyquinoline)aluminum ($Alq_{3}$), rubrene and the mixed matrix of $Alq_3$ and rubrene. The device with DCJTB doped into the $Alq_{3}$:rubrene mixed host shows an efficient red emission from DCJTB with a negligible EL emission from $Alq_{3}$ and a lower EL onset voltage compared to the device with DCJTB doped into the $Alq_{3}$ only host. The quantum efficiency is almost temperature-independent for the device with the $Alq_3:rubrene$ mixed host. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the $Alq_{3}$:rubrene mixed host.

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on carbazolyl vinylene moiety, 3,3'-(1,4-phenylene di-2,1-ethenediyl) bis[9-ethyl-(E,E)-9H-carbazole](PEEC) and 3,3'-([1,1'-biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[9-ethyl-9H-carbazole](BPEEC), as emitting materials. The ITO/m-MTDATA/NPB/BPEEC/Alq3/LiF/Al device shows bluish-green EL spectrum at 490nm and turn-on voltage at 8V. PEEC shows bluish-green EL around ${\lambda}$ max=496nm and turn-on voltage at 6V and 2.4 Cd/A efficiency in ITO/m-MTDATA/NPB/PEEC/Alq3/LiF/Al device.

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on diphenyl benzeneamine moiety, 4,4'-(1,4-phenylenedi-(1E)-2,1-ethenediyl]bis(N,N-diphenyl-benzenamine](PEDB) and 4,4'-([1,1 -biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[N,N-diphenyl-benzenamine)(BPEDB), as emitting materials and dopant materials. The ITO/m-MTDATA/NPB/DPVBi + BPEDB(1%) /Alq3/LiF/Al device shows blue EL spectrum at 458nm and high efficiency(5.3 cd/A). PEDB as dopant shows also blue EL spectrum around ${\lambda}$ max=463nm and 4.1 cd/A high efficiency in ITO/m-MTDATA/NPB/DPVBi + PEDB(1%)/Alq3/LiF/Al device.

This study is the effect of lithium Lithium Complex as an electron injection layer(EIL) on the performance of organic light emitting devices (OLEDs) and optimized the device efficiency by varying thickness of EIL layer. The device with 2nm GDI 101 layer showed significant enhancement of the device performance and device lifetime. We also compared GDI 109 and GDI 117 with GDI 101 as an electron injection layer.

We have synthesized new hole transport materials(HTMs). Then we have fabricated structures of ITO/new HTM/$Alq_{3}$/EIL/Al. New HTM based devices have higher current density and lower turn-on voltage than TPD based devices. New HTMs have higher HOMO level than TPD. The new HTM based OLEDs have shown better current injection than the TPD based OLEDs, due to the lower injection barrier between ITO surface and HTM.

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

A new class of soluble PPV derivatives containing dimethyldodecylsilylphenyl unit as a pendant was synthesized by Gilch polymerization method. The resulting electroluminescent (EL) polymers showed good solubility, good film-forming ability onto the ITO substrate, and exhibited an amorphous morphology due to dimethyldodecylsilylphenyl branched group linked to the polymer backbone. The weight average molecular weights and polydispersities of the present EL polymers were in the range of 8.0-80.0 x $10^{4}$ and 2.67-7.80, respectively. The resulting EL polymers revealed a high thermal stability of up to $355-410^{\circ}C$. Their glass transition temperatures were in the range of $104-251^{\circ}C$. The emission colors could be tuned from green to orange-red colors by changing the MEH-PPV contents in copolymer systems. The turn-on voltages of the EL polymers were in the range of 1.8-4.0 V.

A new series of statistical alternating EL copolymer, poly[bis{2-(4-phenylenevinylene)-2-cyanoethenyl}- 9,9-dihexyl-9H-fluorene-2,7-yl-alt-1,4-phenylene vinylene] (polymer-I) was synthesized by the modified Heck coupling reaction, and their EL characteristics were also investigated. Double layer polymer light-emitting display (PLED) with the configuration of ITO/PEDOT/polymer/Al devices show maximum brightness and luminous efficiency up to 3000 $cd/m^{2}$ at 30 V and 0.07 lm/W at 21 V, respectively.

Perylene tetracarboxylic anhydride derivatives have been well-known as an n-type channel material.$^1$ Here, we report perylene-based pyrrolopyrone derivatives as an n-type channel material. 1,8-naphthalene(l) and 1,2-phenylene(2)-based pyrrolopyrone derivatives were synthesized and characterized. Derivatives 1, 2 were soluble only protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. Thin film transistors were fabricated by vacumn deposition and solution casting and electron mobility of the device were measured.

Using the conventional standard CMOS logic process, the high voltage MOSFET to drive top emission OLEDs was fabricated for the silicon-based organic electroluminescent display. The drift region of the conventional high voltage MOSFET was implemented by the n-well of the logic process. The measurement result shows a good saturation characteristic up to 50 V without breakdown phenomena.

The electrophosphorescent emission properties were investigated in polymer light-emitting diodes (PLEDs) based on a poly(9-vinylcarbazole) (PVK) doped with a green phosphorescent dye of fac-tris(2-phenylpyridine) iridium (III) [$Ir(ppy)_3$]. A green light peaked at 516 nm was emitted from devices with a configuration of ITO/PEDOT:PSS/PVK:$Ir(ppy)_{3}$/BCP/$Alq_{3}$/LiF/Al. The optimal doping concentration of $Ir(ppy)_{3}$ in PVK was found at 2% by weight, under which maximum current efficiency of 24.3 cd/A and peak external quantum efficiency of 6.8% were achieved at the high luminance of 4240 $cd/m^{2}$. The external quantum efficiency of 5% and current efficiency of 18 cd/A can be sustained even at the very high luminance of 35000 $cd/m^{2}$.

A plastic substrate for flexible display is developed. The developed PES film has good resistance to heat, low intrinsic birefringence, and mechanical stability. The gas barrier property in the substrate is improved through depositing organic and inorganic multi layer on plastic film by PVD and CVD process.

In this study, we have investigated a process of preparation of white and black pigment particles by physical or chemical coating with functionalized polymers for the flexible low-cost paper-like display. This polymer coating provided <1 ${\mu}m$ monodispersed particles changed their dispersion, density, optical and electrical properties.

In this study, we have investigated the positively charged polymer particles using emulsifier-free emulsion polymerization for applications in electrophoretic displays. The FT-IR, Zeta potential and SEM characteristics showed that by emulsifier-free polymerization, the positively charged polymer particles were manufactured. Using these particles, we can obtain well-dispersed white latex particles in dielectric suspending media.

We have investigated thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). Source temperature, inert gas flow rate, substrate temperature and deposition pressure during film deposition is used to vary the growth rate, thin film morphology and the crystalline grain size of pentacene thin films. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays will be discussed.

We applied the spray pyrolysis technique to prepare fine $YBO_{3}$:Tb particles with high photoluminescence, which could be used in the plasma display device as a green phosphor. Several preparation conditions were investigated in order to tail the vacuum ultraviolet characteristics of $YBO_{3}$:Tb particles when they were prepared by the spray pyrolysis. As a result, the optimized $YBO_{3}$:Tb particles showed the high photoluminescence intensity as well as fine size in comparison with the commercial one.

We report a new FCOG (flip chip on glass) technique using solder bumps for display packaging applications. The In and Sn solder bumps of 40 ${\mu}m$ pitches were formed on Si and glass substrate. The In and Sn bumps were bonded at 125 at the pressure of 3 mN/bump. The metallurgical bonding was confirmed using cross-sectional SEM. The contact resistance of the solder joint was 65 $m{\Omega}$ which was much lower than that of the joint made using the conventional ACF bonding technique. We demonstrate that the new COG technique using solder bump to bump direct bonding can be applied to advanced LCDs that lead to require higher quality, better resolution, and lower power consumption.

A novel powder processing technique for the preparation of copper activated zinc sulfide (ZnS:Cu,Al) phosphor by combustion process has been proposed. Exothermic reaction between dissolved copper nitrate and carbohydrazide give small-sized particles in presence of alkali metal halides at lower temperature than the traditional method of preparation. This new route takes less than five minutes and requires much less energy. The optical and luminescence characteristics of ZnS:Cu,Al phosphor thus prepared were found to be enhanced significantly. Carbohydrazide acted as fuel at $500^{\circ}C$ with rapid heating and then the phosphors obtained were heated at $900^{\circ}C$ in an inert atmosphere for 3hrs to get better luminescent properties.

A new route for the synthesis of silver doped of zinc sulfide phosphor by combustion method has been investigated. Silver nitrate was decomposed with urea or carbohydrazide to give small size particles in presence of alkali metal halides at low temperature compared to the conventional method. The high temperature inherent to the highly exothermic nature of redox reaction leads to well-crystallized powder in short time. The phosphors thus obtained were further heated at $1050^{\circ}C$ in an inert atmosphere for 3hrs to get better luminescence properties.

The effect of doping Gd, La for Y into $YVO_{4}:Eu^{3+}$ red phosphor on its photoluminescence(PL) intensity has been investigated. $YVO_{4}:$Eu-based phosphors were prepared by solid-state reaction at temperature above $1200^{\circ}C$. Under UV excitation(254, 365 nm), it was measured that $YVO_{4}:Eu^{3+}$ was superior to a commercial red phosphor (Y,Gd)$BO_{3}:Eu^{3+}$ in terms of PL intensity and CIE color coordinates. When La, Gd were doped into $YVO_{4}:Eu^{3+}$, the change in the structure of the host material was observed. In result, when the ($Y{1_x}La_{x})VO_{4}:Eu^{3+}$ phosphors were excited by 365 nm excitation, its PL intensity was improved up to about 30 % for the case of x being $0.4{\sim}0.6$.

We studied field-emission characteristics of CNTs under various pre-treatment with $NH_{3}$ plasma on the substrate. The turn-on electric field is the lowest value and field enhancement factor (${\beta}$) is he highest value in CNTs pre-treated by $NH_3$ plasma (80 W and 5 min). The field-emission property of CNTs grown on the Ta substrate is slightly better than on the W substrate.

The formation of cholesteric liquid crystal (CLC) film reflecting a broadbanded visible spectrum by application of a liquid crystalline coating followed by UV polymerization (photo-curing) is described. Also, the formation of patterned coatings obtained by a sequence of UV exposure steps is discussed. Such coatings play an important role in the improvement of the performance of liquid crystal displays. In order to make these CLC films, we synthesized new cholesteric liquid crystal molecules (Ch-chol) containing the active reaction site to UV light and investigated to broaden the bandwidth of these cholesteric filters based on the various UV treatments.

The copolymerization of ethylene and norbornene was carried out with ansa-metallocene and modified methylaluminoxane (MMAO) cocatalyst. The copolymerization behavior was changed with the structure of metallocene catalysts. In addition the catalyst activity was dependent on the structure of MMAO, i.e.. MMAO-4 which contains less i-butyl group compared to MMAO-3A exhibited higher catalyst activity than MMAO-3A. The glass transition temperature and the composition of the produced copolymer were not affected by MMAO type.

ZnS:Mn has been studied as a yellow phosphor for the application to fluorescent displays operated at low voltage. It was found that luminescence of $Mn^{2+}$ ion from hexagonal phase of ZnS was suitable for the display applications. The main emission peak was shifted to shorter wavelength when Cu ions were doped. The luminescence color of ZnS:Mn phosphor could be changed with decrease of its brightness.

In this work, Integral photography with variable focusing lens arrays is proposed. We fabricate two-dimensional liquid crystal lens arrays using cohesion of UV curable polymer and lithography. Applied voltage to the cell alters the effective refractive index of the liquid crystal layer and results in a change of the focal length. By adjusting the focal length, synchronized elemental image array for real or virtual mode is integrated in front of or behind the lens array.

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

The photoluminescence (PL) properties are studied for a new phosphor $BaZr(BO_{3})_{2}$ doped with $Eu^{3+}$ activator ion. The excitation spectrum shows strong absorption in the vacuum ultraviolet (VUV) region with an absorption band edge at 200 nm. The PL spectrum shows the strongest emission at 615 nm corresponding to the electric dipole $^{5}D_{0}\;{\rightarrow}\;^{7}F_{2}$ transition of $Eu^{3+}$, which results in a good color purity.

Controlling carrier transport in light emitting polymers is extremely important for their efficient use in organic opto-electronic devices [1]. Here we show that the interactions between single wall carbon nanotubes (SWNTs) and conjugated polymers can be used to modify the overall mobility of charge carriers within nanotube-polymer nanocomposites. By using a unique, double emitting-organic light emitting diodes (DE-OLEDs) structure. we have characterized the hole transport within electroluminescent nanocomposites (nanotubes in poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) or PmPV). We have shown using this idea that single devices with color tunability can be fabricated. It is seen that SWNTs in PmPV are responsible for hole trapping, leading to shifts in the emission wavelengths. Our results could lead to improved organic optical amplifiers, semiconducting devices, and displays.

Progress in light emitting materials is presented. New polymers based on the Spiro concept show encouraging properties in electroluminescence performance and lifetime. The spiro-polymers can be tailor made to fit the RGB color requirements of a full color display. This class of materials showed recently very promising performance for white emission as well. They are readily soluble, show excellent thermal stability and can be processed by printing or through simple synthetic modification by photolithography technology.

New polyfluorene derivatives, poly[9,9-bis(4' n-octyloxyphenyl)] fluorene (PAPF-8) and poly[9,9-bis(4'-(2",7"-dimethylocyloxy)phenyl)] fluorene (PAPF-10) were synthesized from the monomers, 2,7-dibromo-9,9-bis[4' (2"-ethylhexyloxy)benzene] fluorene and 2,7-dibromo-9,9-bis[4' (2", 7"-dimethyloctyloxybenzene)] fluorene through the Ni(0) mediated polymerization. The copolymers were characterized using FT-IR spectroscopy, UV-vis spectroscopy, TGA, photoluminescence (PL) & electroluminescence (EL) spectroscopy, elementa analysis, and molecular weight studies. The synthesized POPF-8 and POPF-10 showed a pure blue emission without any spectral change upon thermal annealing and EL device operation.

We report photo- (PL), and electroluminescence (EL) realized via intrachain and interchain energy transfer in poly[9,9-(2'-octyl)fluorene-2,7-vinylene]-co-poly[2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (PFV-co-MEH-PPV) copolymer systems. Energy transfer begins even at the device using 5 % MEH-PPV copolymer, and shows the best device performance for the 10 % MEH-PPV copolymer.

Controlling synthesis conditions of ZnS:Cu,Al and ZnS:Cu electroluminescent phosphors we optimized particle size, color properties and efficiency. Surface properties were studied by new method and showed correlation with luminescence as shown by the analysis of EL spectra with Fok-Alentsev method. Luminance and maintenance improvement was achieved by the electron-beam annealing due to additional decomposition of $ZnS-Cu_{2}S$ solid solution and formation of centers of blue luminescence.

The effects of ZnS insertion on the characteristics of CaS:Pb phosphor were investigated. The intensity of photoluminescence of ZnS inserted CaS:Pb excited by 347nm were increased while that excited by 254nm was unchanged, compared to those of CaS:Pb thin film. The electroluminescent display having ZnS inserted CaS:Pb showed lower threshold voltage and higher efficiency than those of CaS:Pb ELD device.

Design and fabrication process of a full inorganic electroluminescent microdislay based on aluminum / nanostructured porous silicon reverse biased light emitting Schottky diodes are discussing. Being of a solid state construction. this micro-display is cost-effective, thin and light in weight due to very simple device architecture. Its benefits include also super high resolution, wide viewing angles, fast response time and wide operating temperature range. The advantages of full integration of a LED-array and driving circuitry onto a Si-chip will be also discussed.

Structural morphology, annealing behavior and dielectric properties of polyaniline-emeraldine base (Pani-EB) and poly methyl methacrylate (PMMA) thin films prepared by spin coating technique have been studied. MIM and MISM structures were used to investigate annealing and dielectric behavior. The XRD and AFM spectrum of as grown and annealed thin films indicates the amorphous nature. The observed amorphous phase, low loss, dielectric behavior and thermal stability even at high temperatures implies the feasibility of utilizing PMMA and Pani-EB thin films as gate dielectric insulator layer in organic thin film transistors which can find application in flat panel display.

We have studied liquid crystal orientation on rubbed and photoaligned polymer surfaces. The following topics will be presented; (1) visualization of nonuniformity of rubbing, (2) competition between grooves and photoalignment and (3) alignment process of 5CB evaporated on treated surfaces. Through these topics, the importance of the intermolecular liquid crystalline interaction will be emphasized.

A driving mechanism and excellent features for an in-plane switching twisted nematic liquid crystal mode (IT mode) that could possibly improve the viewing-angle and color shift characteristics and the cell gap error tolerance is proposed. .It is important that the surface azimuthal anchoring strength of the liquid crystal cell differs at the upper and lower substrates. Furthermore. as a rubbing-free LCD. amorphously aligned in-plane switching twisted nematic mode (a-IT mode) is also demonstrated.

A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

Normally white TN-LCD is the preferred solution in active matrix display thanks to easy production, fast response and good white balance. However, it is has poor viewing angle properties and correction films are difficult to design. We present the mathematics of designing a compensating film and discuss various technological solutions for making

We consider geometrical conditions of liquid crystals of bent-shape molecules that result in optically isotropic antiferroelectric structure that can be reversibly switched to birefringent states. An example of an ester based banana-shape substance is discussed that almost fulfills the ideal conditions and provides fast electro-optical switching with or without crossed polarizers.

Polarized Fourier transform infrared (IR) absorption is used to probe molecular conformation in a ferroelectric liquid crystal (FLC) during the reorientation induced by the external field. Spectra of planar aligned cells of FLC W314 are measured as functions of IR polarizer orientation and electric field applied to the FLC. The time evolution of the dichroism of the absorbance due to biphenyl core and alkyl tail molecular vibration modes, is observed. Static IR dichroism experiments show a W314 dichroism structure in which the principal axis of dielectric tensor from molecular core vibration are tilted further from the smectic layer normal than those of the tail. This structure indicates the effective binding site in which the molecules are confined in the Sm-C phase has, on average, "zig-zag" shape and this zig-zag binding site structure is rigidly maintained while the molecular axis rotates about the layer normal during field-induced switching.

For LCD-TVs with full capability to show moving pictures and LCD monitors for multi media use, it is necessary that the switching times of Liquid Crystal (LC) mixtures are within one frame (16.7ms). In order to achieve faster switching times, new LC materials have been identified, mainly focusing on the further reduction of the rotational viscosity (${\gamma}1$).

For high quality displays, analog responding liquid crystals with spontaneous polarization ($P_{s}$) need to be coupled with active matrix driving schemes. We have characterized the half-V-shaped switching ferroelectric liquid crystal mode (half-V FLC mode) in terms of dielectiric and voltage holding properties. Research on these switching properties provided us with the technology for switching half-V FLC mode FLCs by using amorphous silicon TFTs.

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

A direct light type backlight for large-area LCD-TVs using External Electrode Fluorescent Lamps (EEFLs) has been developed. The brightness was $450cd/m^{2}$(nit) and the luminous uniformity (max/min) was 1.3. The mechanical design of backlight was optimized and the reliability of lamps was secured. As a result, the possibility of backlight with EEFLs for large area LCD-TVs was sufficiently proved.

We have developed the three-dimensional simulation tool for the design of deflection yoke. This tool consists of a modeler, a solver and a post-processor. The modeler easily makes models of Deflection Yoke (DY) and ferrite core (Circle, RAC and RTC) by the parameters and supports several element types (line, surface and quadrilateral). The solver calculates charge density and magnetic field of DY by boundary element method (BEM). We can simply evaluate misconvergence, distortion and inductance of DY in the post-processor, so we apply this simulation tool to 32" rectangular deflection yoke. We can conveniently implement the efficient development of DY in the future.

When a braun tube becomes wider, one of the major problems to be experienced is the non-uniform coating along the four diagonal directions on its surface. This non-uniformity in the coating thickness has a deep relation with the fluid flow on the surface of a braun tube. In order to control the fluid flow properly, we install the plate to block fluid flow at the corner of a braun tube. In the present study, we investigate the effects of the geometry of plate to control the fluid flow and coating uniformity and determine the optimal shape of plate to improve the quality of coating uniformity.

Harmonic analysis, based on finite element method, is popularly used to predict a response of shadow mask to the external excitation from speakers. Since vibration wave travels from speakers to the shadow mask, a finite element model must include all mechanical parts between the speakers and the shadow mask, which increases total time needed in finite element modeling and computation. In this paper, we perform the harmonic analysis on a MF assembly to obtain frequency response function of a shadow mask, and compare the solutions with experimental results.

The advanced analysis techniques such as high resolution X-ray absorption spectroscopy (XAS), X-ray scattering, and photoelectron emission microscope (PEEM) using synchrotron radiation are probably able to open new opportunities for improving the performances of oxide cathodes with more clear and deep understanding.

The effect of the scan velocity modulation is studied. The effect of the velocity modulation on the picture image is judged from the intensity profile of the image. The intensity profile is obtained as time integral of moving Gaussian beam. To confirm the applicability of this integral formula, the measurement and simulation data is compared. And by calculating the intensity profile for different amounts of velocity modulation, the optimum modulation displacement that gives the best image quality is obtained. This optimum modulation displacement can be used in designing scan velocity modulation system.

The effects of time delay between a video signal and a current signal applied to velocity modulation coil on free-spot movement and beam size were measured and analyzed quantitatively in this study. The result shows that it is the most important to avoid signal mismatching in order to achieve the optimal velocity modulation performance.

Recently CRT is getting flatted, As change of CRT trend from normal type to Flat type, the material of Shadow Mask was also changed from AK(Aluminum Killed) to Invar(Fe-Ni alloy) materials Until now we have used just AK(Aluminum Killed) for normal type TV(not flat type), but main raw material of shadow mask component was changed. . However recently Invar(Fe-Ni alloy) materials, which has advantage of Low Thermal Expansion and High Strength, has been developed as well as applying in mass production as CRT's trend has become more flat and fine pitch. As main raw material of shadow mask component was changed, conditions of process were changed. One of them, the importance of pre-etching process (assistant process for developing & etching) is improved because there are so many particles in the pre-etching bath because of Ni compounds. Since the solubility of Ni in pre-etching solvent is very low related to Fe's, so the compounds of Ni happen to make particles.(the solubility of Fe is twenty times Ni's) that particles happen to make process troubles and NG productions so to clear the particles we had to established high cost filtering system, but it is useless. As time goes by the quantity of particles (Ni compounds) was increased because of the capability of filtering system was not enough, the particles was produced continuous in bath, and it make quality problems. Hence we tried to develop the new pre-etching solution to remove the particles (Ni compounds) and to cost down the filtering system's running cost. But in improving the solution we discovered the new pre-etching solution made the PR developing better. In former solution there were three kinds of chemistry (COOH)2 , H2O2 , H2S04 .first the function of (COOH)2 is drilling the surface of Invar, during this mechanism Ni compounds occurred. Second the function of H202 is removing the PR fringe (half UV exposure zone on PR(PVA)), Third the function of H2S04 is the catalysis of (COOH)2 In those, (COOH)2 was the main reason to make the Ni compounds. So to improve the solutions we had to change (COOH)2 to the other material. the chemistry we improved was a complex chemistry based on H2S04 . after using this chemistry the particles problem was disappeared and there was another advantage cut down the PR fringe. The New solution made the function of H202 better so the PR developing improved. To be direct the catalyst of the new solution helped the H202. anyway First thing after change the solution the quality of shadow Mask for flat color TV was improved & the yield also improved. But the more important thing is how to control the new solution. So we accepted the new concept which was the degree of freshness. The degree of freshness is based on non-reacted solution which was 100% ( the degree of freshness) and calculated the melted Ni quantity as time goes by. So we made the gauging liner plot. In conclusion, many companies tried to make fine pitched Shadow Mask ,generally to make quality jump up it needed a lot of cost & persons .in this case the shift of core material made it possible.