Since the introduction of TFT LCDs in portable personal computers (notebooks) in the early 1990's, the TFT LCD industry has experienced several waves of technology revolution: (1) product introduction, (2) performance enrichment, (3) power utilization and material utilization, and (4) human-interface functions.

The high efficacy concept, featuring in this study an auxiliary electrode and a 200 ${\mu}m$ coplanar gap, is applied to AC-PDPs with a stripe - type and a closed - type barrier rib, respectively. The roles of the pulses applied to the auxiliary electrode create additional excitation during the sustain period and reduce a discharge current that flows into the display cells. The efficacy of the proposed panel with the closed barrier rib has maximum values when the auxiliary pulse voltage is 50 volts and 80 volts for the Ne+4%Xe and Ne+20%Xe gas-mixtures, respectively. The maximum luminous efficacy is more than 10 lm/W in terms of the measurement of the discharges in VGA resolution ($540{\mu}m{\times}720{\mu}m$) and the green cells.

We investigated the effect of sustain electrode gap variation with high Xe content in an ac Plasma Display Panel through two-dimensional numerical simulation to understand the inherent high luminous efficiency mechanism. For the low Xe content, the optimal sustain electrode gap turned out to be about 200 ${\mu}m$, but with higher Xe content, the VUV generation efficiency increased as the electrode gap increases beyond 200 ${\mu}m$. We found that it is due to higher electron heating efficiency in the cathode sheath under the condition of long electrode gap and high Xe content.

The panels were fabricated to characterize the contamination of Magnesium Oxide (MgO) thin films by phosphors and ion bombardments in AC-PDPs. Forty-six inch WVGA panels of the surface and vertical discharge type were manufactured. The experiment was designed to investigate the relationship between the MgO thin films and phosphor contamination caused by ion bombardments in a plasma environment to produce a life time test. The contamination of MgO thin films by phosphors was investigated by way of X-ray photoelectron spectroscopy (XPS).

A newly designed micro-plasma device using SU-8 photoresist as a barrier rib has been successfully fabricated and characterized. Operating in neon gas at pressures from 300 to 800 Torr and having hexagonal structure, $5{\times}5$ arrays of micro-plasma device have been investigated. The driving voltage is lower than 250 V.

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

An evolutionary optimization process involving genetic algorithm and combinatorial chemistry was employed in an attempt to develop titanate-based red phosphors suitable for tri-color white light emitting diodes We screened a eight-cation oxide system including $(K,Li,Na)_x(Y,Gd,La,Eu)_yTi_zO_{\delta}$ in terms of luminescent efficiency. The combination of genetic algorithm and combinatorial chemistry was proven to enhance the searching efficiency when applied for phosphor screening. As a result, the composition was optimized to be $(Na_{0.92}Li_{0.08})(Y_{0.8}Gd_{0.2})TiO_4:Eu^{3+}$, The luminance of this phosphor was 110 % of that of well-known scheelite variant phosphor at an excitation of 400 nm.

A $Eu^{2+}$ doped $BaAl_2S_4$ phosphor was synthesized from BaS, EuS, Al and S powder by vacuum heat treatment. The synthesized powder at $850^{\circ}C$ was composed of only $BaAl_2S_4$ phase. The photoluminescence of $Eu^{2+}$ doped $BaAl_2S_4$ phosphor showed the blue emission centered at 470nm and CIE color coordinate at x=0.12, y=0.11.

Effectiveness and its possibility of ELA (Excimer Laser Annealing) for advanced Si TFT system on insulator are described. Currently, extensive study is carried out to realize an advanced SoG (System on Glass) based on LTPS (Low Temperature Poly-Si) technique. By reducing further the process temperature and by improving the fabrication process of LTPS, addressing TFT circuits for FPD (Flat Panel Display) can be mounted onto a flexible plastic as well as onto a glass substrate. Functional devices on the insulating panels are developed to be formed by using ELA. Although technical issues are remained for the fabrication process, Si transistors including 3D TFT structure formed by ELA is expected as a functional Si system on insulator in the ubiquitous IT era.

A new data line reduction driving method was developed for high pixel density LCoS microdisplays. Its pixel structures and its corresponding gate line waveform were proposed, too. This idea can fulfill the increasing demand for higher resolution LCoS. In this method, no additional AC power is dissipated, and no more horizontal line time is needed. So this method can be applied to the high resolution microdisplay devices. It prefers being applied to the reflective liquid crystal on silicon microdisplays because of the pixel structure asymmetry and PMOS transistor switches used.

The driving-current degradation of a-Si:H thin-film transistor(TFT) device has been analyzed for the first time. A method to analyze the performance of TFT circuits is presented, which is different from the conventional one by threshold voltage shift method. It can be also used to evaluate the performance of gate driver on array (GOA) circuit, which is integrated in a 12.1" WXGA ($1280{\ast}3{\ast}800$) TFT-LCD panel.

We review our studies on the growth of microcrystalline silicon films by the standard PECVD technique. In situ spectroscopic ellipsometry studies allow the optimization of the complex film structure with respect to competing aspects of the growth process. Fine tuning the hydrogen flux, the ion energy, and the nature of the species contributing to deposition produces unique films with a fully crystallized interface with silicon nitride. These materials have been successfully incorporated in bottom gate TFTs which present mobility values in the range of 1 to 3 $cm^2/V.s$, and stable characteristics when submitted to a bias stress. The stability of these TFTs makes them suitable for driver applications in AMLCDs as well as pixel elements in OLED displays.

We describe a unique process based on colloidal self-assembly that results in a uniform (almost hexagonally close-packed) layer of liquid crystal domains over large areas leading to single-substrate cholesteric LCDs with low switching voltages, excellent contrast, and high brightness. Extension to guest-host LCDs is also discussed.

Capacitance and loss values of pentacene MIS capacitors with different thicknesses are measured as a function of frequency for the modeling of the devices. The equivalent circuit for the ideal MIS capacitor is adopted to model the obtained admittance, so the values of $C_i,\;C_d,\;C_b$, and $R_b$ are determined for each pentacene thickness. In the loss curve, broader loss peaks are observed in measurement than the modeling results regardless of the pentacene thickness. By considering the effects of dispersive charge transport in bulk semiconductor, more accurate modeling results are obtained.

Pentacene films, grown on polyethylene terephthalate (PET) substrates, were doped with Iodine. ESR measurements were made for the films in the temperature range of 100-300 K. Two regimes of doping stages were discernible: a light (intercalation) doping regime and a heavy doping regime. The light doping regime was concluded to be dominated by localized holes that were trapped at low temperatures, which indicated trap states near the valence band edge.

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

The ultra-high definition TV system nicknamed "Super Hi-Vision" is a television system with 4000-scanning-line video and 22.2 multichannel sound. NHK has been developing it with the aim of creating a broadcasting system conveying a strong sensation of presence. We believe that it is important to design the system by taking into account human factors such as human visual system characteristics. This paper describes the psychological and physiological experiments on the visual effects of "Super Hi-Vision".

This paper introduces two systems for editing and evaluating 3D content. The systems, a non-linear editing system and an evaluation system, were developed to improve viewing safety and comfort for 3D content observers and provide better usability for the creators from the viewpoint of ergonomics.

Motion artifact of Display devices has a huge interest from industries and users recently. Among those artifacts, color break up (CBU) is one of the key degrading characteristic in field sequential type displays. Unfortunately, there are no objective measurement methods for CBU. Here we introduce two different kinds of CBU and its measurement methods. The CBU characteristic of LCD, DLP, and PDP was measured and compared.

Historically, LCD monitors have not been able to be used for frame-sequential stereoscopic 3D visualisation due to their slow pixel response rate. With LCD pixel response rates now in the single-digit millisecond range it is natural to ask whether it is now possible to achieve frame-sequential stereoscopic 3D viewing on LCDs.

The highly integrated nature of polymer based organic light emitting diode (POLED) microdisplay technology, coupled with low voltage and low power electroluminescent light generation, combine to offer a very promising technology for use in portable and personal electronics products. We briefly describe the technology before discussing how to engineer the color gamut using whiteemitting polymer materials, microcavity device structure and color filter absorbance.

In this presentation we will describe two core elements, which combination gives a new approach to layout verification; they are a computational algorithm for modeling of photolithographical processes and a method for physical layout verification that uses output contours of that algorithm. Utilization of this approach allows to improve the quality of LCOS/AM OLED backplanes physical verification, because it considers discrepancies between mask features and printed contours on a wafer.

Top Emission Active Matrix OLED is of particular interest to high performance display consumers. OLEDs offers excellent viewing angle, contrast, and color gambit. The present work centers on the development of a crystalline silicon active matrix OLED for high performance applications.

A novel quantum chemical molecular dynamics program, 'Colors' was developed to simulate the electronic structure of rare earth-doped phosphor materials as well as the destruction processes of MgO protecting layer in plasma display panel (PDP). We have also developed a quantitative prediction method based on Monte Carlo simulation technique to evaluate the electrical conductivity of insulators, semiconductors, and metals as well as the spatial distribution of electron density by Colors code. All these original simulators enable us to study theoretically a variety of materials related to PDP.

We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

AC-plasma display panels were examined before and after the aging process to analyze the effect of the aging process. The gas analysis was done to detect the impurity gases out of the MgO film and phosphor by a residual gas analyzer. There were no differences found in the components. The MgO film was analyzed to find out the effect of an ion bombardment due to discharge. The surface roughness of the MgO film was different from regional groups due to the different degree of ion bombardments. XPS analysis showed that the 8 hour aging process was not sufficient to remove $Mg(OH)_2$ and $MgCO_3$ existed on the MgO surface. Photoluminescence measurement showed the small deterioration of blue and green phosphor.

In order to study the relationship between the discharge characteristics of an ac PDP and the surface conductivity of MgO thin film, the surface current across a ring shaped MgO film was measured by exposure to monochromatic vacuum ultraviolet from the synchrotron radiation source whose wavelength ranges from 60nm to 240nm $(5.5eV{\sim}25eV)$. The experimental results show that the surface current begins to increase rapidly at the photon energy of about 9 eV which might correspond to the valence band edge of MgO. The difference in the surface current level correlate well with the differences in the preparation method of MgO films and their respective discharge characteristics such as the firing, minimum sustain voltages, address voltage margin and address discharge delay time.

The prototype of the field emission display with carbon nanotube emitter is developed in this study. To improve the brightness and color gamut of the prototype, new phosphor material, $SrGa_2S_4:Eu$, is adopted instead of conventional CRT-green phosphor. By replacing the green phosphor, the prototype shows significant improvements in the brightness and color gamut. At the anode voltage of 7 kV and the anode current of $2{\sim}3\;{\mu}A/cm^2$ the brightness is higher than $600\;cd/m^2$. The luminous efficiency of the prototype is about 7.7 lm/Watt.

The possibility of an active-matrix carbon nanotube field emission display (AM-CNT FED) is discussed from the view points of display performance and cost. The critical issues for FED commercialization such as anode acceleration voltage, uniformity, stability and reliability can be solved through our AM-CNT FED technologies.

We developed new FED cathode film material that has catalysis function for graphite nano fiber. Using the cathode film with catalyst, we can simplify the FED process. It is composed of Cr, Fe-Ni catalyst. Fabricating FED panel with the film, we confirmed good emission performance of the panel.

Carbon nanotubes backlight unit (CNT-BLU) that lightened by field emission was developed into practicability. According to our novel structure, AC mode circuit design and simple printing process, CNT-BLU could achieve 85% of uniformity, 8000 nits of brightness and low material and fabrication cost. Based on these performances, this new planar backlight technology has chances to proceed to mass production and has the potential to replace traditional backlight technology because of its good properties, like the simple processes, easy to large scale, low surface temperature, low power consumption, optical film-free and Hg-free, etc.

We reviewed our recent advances in LC mixture development identifying the new classes of materials to yield LC mixtures with faster switching times and better reliability

We found dramatic changes of the properties of LCs by dispersing ferroelectric nanoparticles. Specifically, ferroparticles greatly increase the nematic-isotropic transition temperature, birefringence and dielectric anisotropy of the LC. Ferroelectric nanoparticles/LCs colloids offer a simple and effective means to precisely control the physical properties of LC materials and optimize them for display applications.

In this paper, we study how the viewing angle characteristics of a bend cell can be compensated by uniaxial films such as positive a-plate, negative c-plate and circular polarizer. Especially, it is confirmed how the circular polarizer composed of a quarter-wave plate and a linear polarizer enhances the viewing angle characteristics by the $Poincar\acute{e}$ sphere representation. Also, additional compensation film is designed to improve the viewing angle characteristics of the cell by the $Poincar\acute{e}$ sphere representation.

In this work, we report the synthesis and characterization of azomethine-ester polymers that consist of banana-shaped mesogen in their backbone. Two parts of the key structure of five-ring bent-core mesogen were modified by connecting different angle of central unit (Ar), and introducing lateral substituent into the outer ring (X). The synthetic details includes (1) placing the dioxydodecamethylene unit as a flexible spacer, (2) possessing 2,3- or 2,7-naphthylene, or 1,2-phenylene connection on the central unit, and (3) introducing fluorine or chlorine substituent (X = F or Cl) into the outer phenylene unit.

Here we report an enhanced flexoelectric switching in a self-assembled system of smectic liquid crystal and some specific dopant. The assembled unit block seemed to have electric dipole and as a result induces large flexoelectric polarization due to its asymmetric shape and shows fast switching to the electric field. The unit blocks are oriented in a helical fashion in the cell with large gap (${\sim}5{\mu}m$) and shows selective reflection property. In the thin cell (${\sim}2{\mu}m$), the unit blocks are aligned homeotropically on the bare ITO substrate with no surface treatment and shows fast decaying time.

The flexible 2-inch AMOLED with $176{\times}144$ pixels has been demonstrated using top emission OLED driven by organic thin film transistors (OTFTs). For the development of AMOLED display on plastic substrate, we have developed several integration and unit process technologies. Through the optimization of the process based on plastic substrate, OTFT backplane with 2 transistors and 1 capacitor in a pixel has been fabricated and integrated with top emission OLED. The active addressing by OTFT driving circuit has been achieved and green light with 15 $cd/m^2$ at 15V has been observed.

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

we implemented pentacene TFTs able to operate at low voltage less than 2V by using ultrathin Al2O3 layer as a gate insulator. The OTFTs exhibited a mobility of $0.27{\pm}0.05\;cm^2/Vs$, an outstanding subthreshold slope of $0.109{\pm}0.027$, and an on/off current ratio of $2.87{\pm}1.07{\times}10^4$. OTFT operated at low voltage, producing 3.5uA at $V_GS$= 2V and $V_DS$= 1.5V.

One novel electrode-architecture has been adapted to fabricate transparent OTFTs. The device has more than 70% transmittance, yet reminds high performance. Furthermore, we also use transfer line method to prove that the device performance enhancement indeed contributes from the reduction of the contact resistances. It is anticipated that the transparent OTFTs would be very suitable to be the driving circuits for liquid crystal displays (LCDs).

The optimization of poly-Si TFT process on metal foil for UTL AMOLED was systematically investigated. The improvement in device performance of poly-Si TFT on metal foil was achieved by optimizing the dopant activation condition and gate dielectric structure. Hence, the world first flexible full color 5.6-inch AMOLED with top emission mode on poly-Si TFT stainless steel foil is demonstrated.

We report the recent progress and future prospects of flexible, large-area sensors and actuator using organic thin-film transistors (TFTs). In particular, we describe printing technologies to manufacture electronic artificial skins (e-skins) for robots, sheet image scanners suitable for mobile applications, and Braille sheet display with plastic actuator arrays. We also present recent progress of reliability and stability issues.

Adjustable reflective color gamut RGBW transflective liquid crystal display (ARC RGBW TRLCD) applied simple manufacture process and image processing algorithm to achieve high brightness and good color performance both in transmissive and reflective mode. With appropriate modification higher transmittance but no color distortion happens in transmissive mode. Moreover, base on superior reflectance total brightness and color gamut also can be modified under different ambience. It provides the flexibility not only for any environments but also for variant personal hobbies. It is the best technique used both at indoor and outdoor.

This paper presents an area efficient 8-bit current digital to analog convector (DAC) which is applied to 240 channels Active Matrix - Organic Light Emitting Diode (AMOLED) data driver. The proposed circuit constitutes 4-bit binary weighted current DAC and 4-bit switched capacitor cyclic DAC. The proposed DAC has about 70% smaller area than that of the typical binary weighted current DAC. We overcome sampling time by reducing the number of repetition phases so that it can display 8-bit gray scale image.

In this paper, a high-voltage generator with several mA draw output currents using LTPS-TFT technology is proposed. The new generator can be efficiently boosted about +18V output voltages with 5mA draw output currents and power efficiency ${\eta}$ is around 84% under the conditions of +5V power-supply voltage and 250kHz frequency.

A custom-made display driver for an electronic paper is presented, which has high-voltage multilevel output capability and extremely low power consumption. An original level-shifter circuit can effectively reduce the power consumption and the chip area. This driver was implemented to a Quick-Response Liquid Powder Display (QR-LPD) and the image quality and power consumption was estimated.

General discussions of the optical structures and rigorous electromagnetic modeling of OLEDs will be first given, and then their applications in analyses and designs of various advanced OLED structures, e.g.microcavity OLEDs, tandem OLEDs and top-emitting OLEDs etc., will be reported.

Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

Reset is necessary for effective addressing in AC PDPs, but reset takes considerable time and produces background luminance. A reset method that takes less time but is effective for addressing is presented. Furthermore, this reset method produces almost negligible background luminance.

We have developed a new driving method named TROPHY(Talented Role-playing Technology with Dual Polarity sustainer in Hybrid Mono board). In this method, the sustain voltage is halved compared to the conventional method and the number of power sources is reduced by voltage level unification during the reset, address and sustain period. The hybrid mono board was especially developed to implement those technologies. Therefore, we can lower the cost with the TROPHY compared to the conventional one. It is suitable technology to improve the reliability of circuit and image sticking problem. We can also reduce the number of driving boards and the EMI problem comparing to those of the conventional method.

A low cost PDP sustain power supply is proposed based on flyback topology using Boundary Conduction Mode(BCM) to control input current regulation. This method guarantees DCM condition to regulate the input current harmonics under all load conditions. An excessive voltage stress due to the link voltage increase can be suppressed by removing link capacitor and adjusting transformer turns ratios, which makes it possible to be used for universal line applications. The proposed converter is tested with a 400W(200V-2A output) prototype circuit.

Comparison of one two-path single energy recovery circuit for plasma display panel (PDP) is shown in this paper. A single energy recovery circuit (SERC) is proposed to reduce cost for manufacturing PDP and there are two ways, one and two-path, in driving this circuit. Compared with one-path SERC, there are low power consumption, low surge current and high performance in two-path SERC. The results will be shown with 42-inch HD panel.

Advances in non-sulfur-containing phosphors from low-temperature synthesis of thin-films suitable for glass substrates are discussed. The effects of preparation process on the properties of a variety of rare-earth-doped oxide hosts are reviewed. Cathodoluminescent characteristics have been studied to determine the usefulness of oxide thin-film phosphors in field emission displays.

The estimation of applicability $SrTiO_3:Pr^{3+}$, Al to a class low-voltage flat-panel displays based on field emission effect, which have average value anode voltage $U_a=300V$ and current density $j=100\;mA/sm^2$ at duty 240, has given positive result. In the same time observably for the most effective sample in similar conditions of excitation high brightness - more than $500\;Kd/m^2$ and linear brightness dependences from current density and voltage allows to decrease greatly the power which consumed by the device.

In this study, ink-jet technology is applied to the emitter fabrication for surface-conduction electron-emitter display (SED). The general emiiter material of SED, palladium oxide (PdO), is prepared by calcination the mixture of solvent and precursors of platinum chlorine and platinum nitrate. With controlling the precursors and solvents, the PdO is formed below $400^{\circ}C$ which is required for SED process.

Nanostructured carbon (nm-C), including carbon nanotubes and nanofibers (CNTs/CNFs) is promising for low-cost field emission display (FED) application. By modification of CNTs/CNFs, uniform CNTs/CNFs can be obtained and used for field emission cathode (FEC) on glass substrate. By screen-printing (SP) and electrophoretic deposition (EPD) process, large area FEC can be obtained. The FED properties are studied and compared. Both SP and EPD FEC show excellent field emission properties, such as low emission field and uniform emission, after optimization the fabrication process. While EPD FEC exhibits better luminescence image. By vacuum sealing, the low cost nm-C-FED prototypes based on EPD cathode have been demonstrated.

Recently LG.Philips LCD (hereafter "LPL") has announced the development of the world's largest 100-inch TFT-LCD with Advanced Super IPS technology. This magnificent LCD achieves the feature of a full high definition resolution $1920{\times}1080(16:9)$, 600nit brightness, 3000:1 dynamic contrast ratio, 92% color gamut, 180 degree viewing angle, and 5msec response time at all grays, targeted for HDTV and public display applications. Some unique technologies such as Cu bus line, advanced wide view polarizer, and high color gamut lamp were applied. A new stitching free technology was developed to overcome the size limitation of photo mask in both the TFT and CF processes. The size of the panel (100-inch) based on the wide format (16:9) is determined by the maximum efficiency of world's $1^{st}$ seventh generation line (glass size:$1950{\times}2250mm$) in LPL's Paju display cluster. In this paper, we will discuss the issues of 100-inch TFT-LCD.

Temporal dual gamma drive technology employing the 120Hz refresh rate was developed to enhance the off-axis viewing quality in patterned vertical alignment mode. The color shift ${\Delta}u'v'$ from on-axis to off-axis (60 deg.) for pale orange color, (R,G,B) = (196,124,96), was below 0.01, and the power exponent of gamma curve for off-axis viewing angle (60 deg.) was about 1.8, when the gamma curve for on-axis was set with power exponent of 2.4. The off-axis image distortion index was below 0.180 in contrast to the normal case ${\sim}0.23$. To elevate the response speed of liquid crystal in the intra-frame, the voltage below threshold voltage of liquid crystals was used.

We designed the H-IPS that has similar aperture ratio to the AS-IPS with organic insulator. To improve the aperture ratio without organic insulator, we positioned the pixel electrode over the preceding gate on the base of the H-IPS structure, and minimized the width of pixel and common electrodes. Without the additional process, we could obtain the similar brightness with that of AS-IPS in 15inch SXGA+ Panel.

Using a single LC panel and two lighting systems, we have developed an advanced LCD system called "Double-Sided LCD." It has only one LC panel and two lighting systems, but it can display images of the same size and resolution on both the front and the rear side. Furthermore, utilizing a simple and thin lighting system we have reduced dramatically its module thickness up to 3.0mm, much thinner than that of conventional dual-type LCD, which is quite appropriate for the use of mobile applications.

Driver electronics for emerging display technologies are presented for OLED's, microdisplays, electrophoretic displays & bi-stable LCD's. Key factors for commercialization of these technologies are derived from the experience of the LCD's, including driver IC designs, wafer and assembly processes & applications.

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.

In this paper, the plastic organic thin-film transistors (OTFTs) with $32{\ast}32$ array are presented. Flexible organic light emitting diodes (OLEDs) operated by OTFTs are fabricated with a novel lamination method and the results are also presented. OTFT pixels defined by photolithography, and pentacene deposited by thermal evaporation. Fabrication method and the performances of green PHOLEDs with high efficiency, stability, and electrical performance are discussed.

In this paper we describe a new process for thin film encapsulation of OLED displays which is suitable for mass manufacturing.

We present the most recent experimental results on Thin-beam Directional X'tallization (TDX), a rapid excimer-laser-based crystallization method for creating extremely high-quality large-grained polycrystalline silicon films on glass substrates. We will present experimental data obtained with our prototype Gen 2 tool, and discuss the ability to produce different types of poly-Si material.

Inspection in the back end of the LCD is moving from human based to automated. This is driven by the desire to eliminate human operators and the need to have repeatable, reliable data for fab optimization. The number of systems required varies by the fab module location, product mix, and repair capability.

High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

LED chips are produced by cutting the sapphire on which GaN is evaporated. To cut the sapphire wafer into each LED chip, at first the wafer is scribed by diamond tool. To get the sharp groove shape for the nice cutting plane it is important the diamond tool shape, load, etc when the wafer is scribed. Here we tried to simulate the scribing process and get the scribing condition to reduce the wear rate of diamond tool for the sharp groove shape.

The piezoelectric thick films were fabricated on silicon substrates by screen printing method. By developing a low-temperature sinterable piezoelectric composition and a new poling technique, we fabricated the high-performance piezoelectric thick films on silicon which can be applied for piezoelectric MEMS applications such as micropumps of the ink jet printer heads.

We developed highly efficient fluorescent dopants for full-color OLEDs. For blue, green and red OLEDs, current efficiencies of 8.7cd/A, 20.5 cd/A and 11.4 cd/A at $10mA/cm^2$ were achieved, respectively. Lifetime of the blue device was estimated to be 23,000hours at an initial luminance of $1,000cd/m^2$. Moreover, long lifetime over 100,000 hours was estimated in the green and red devices. Furthermore, we obtained a three-component white OLED by using these new fluorescent materials. This white OLED shows a current efficiency of 16.1cd/A with extrapolated lifetime over 70,000 hours at $1,000cd/m^2$, and more excellent color reproducibility for full-color displays with color filters and general lighting, compared to previous fluorescent white OLEDs.

The glass transition behavior of OLED materials is very important for both processing and lifetime. We report about the correlation between the structure of selected small molecule Hole Transport Materials (HTM's) and their glass transition temperature. The thermal stability of devices manufactured with them was investigated. The results give researchers and engineers some information which are helpful for designing new molecules and processing them in device making.

OLEDs are becoming established as a commercially viable flat panel display technology of choice of the $21^{st}$ century because of its lightweight, fast response time, lower thickness than LCD's and potentially low cost (1-2). For the OLEDs to function effectively, highly thermally stable materials, which offer high efficiency and long operational lifetimes are required. To achieve long lifetime, highly stable charge (both holes and electrons) transporters are essential. OLED-T provides these materials as well as fluorescent and phosphorescent dopants. This paper reports a unique patented hole injector (E9363) and an electron transporter (E246) that increases the lifetime and efficiency and reduces operating voltage. Further, an electron injector, EEI-101, which evaporates at a very low temperature of $300^{\circ}C$ as opposed to the conventional LiF, which requires $580^{\circ}C$, is also presented.

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. BPBAPE[EML 4] having high $T_g$ of $155^{\circ}C$ showed luminance and power efficiency of 10.33cd/A and 4.0 lm/W without any doping agent. BTBPPA[EML 5] exhibited 5cd/A and 1.67lm/W efficiency with blue CIE value of (0.165, 0.195).

We developed new quantum chemical molecular dynamics and kinetic Monte Carlo programs to simulate the destruction processes of MgO protecting layer in plasma display panel. Our simulation results proposed that MgO(111) surface with nano-dot structures covered by (001) facets has the highest stability, which is against the previous knowledge. The formation of nano-dot structures on the MgO(111) surface covered by (001) facets was found to be the reason for the high stability of the MgO(111) surface. Furthermore, the effect of grain boundary on the stability of MgO surfaces was also clarified.

Characteristics of doped MgO layer deposited under hydrogen atmosphere were investigated. Hydrogen gas was introduced during e-beam evaporation of doped MgO and its effects on microstructure, cathodoluminescence, discharge voltages and effective yield of secondary electron emission were examined. The results indicated that the hydrogen influences and doped impurities the concentration and energy levels of defects in MgO layer and that affects the luminance efficiency and discharge delays of the panels significantly.

In this study, an attempt was made to form magnesium oxide layer via aqueous solution route of salt precipitation process. A layer with flake morphology was formed from the process and various dopants were added during the forming process. The films formed were characterized using SEM, XRD, and cathodoluminescence measurement. In addition, the discharge characteristics were evaluated using panel tests. The results indicate that MgO film can be formed via the aqueous solution process successfully, of which characteristics are comparable to those of MgO film formed by e-beam evaporation process.

Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigating the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.

The protective layer of AC-PDP was fabricated by laminating an MgO green sheet. The MgO green sheet was made by coating MgO solution composed of solvent, dispersant, binder, and MgO nano-powder. The MgO solution was coated by the die casting method on the base film. We fabricated three kinds of MgO green sheets of which thicknesses were 20, 28, and $40\;{\mu}m$, respectively. The MgO nano-powder showed lower CL intensity and ${\gamma}i$ than the e-beam MgO. The MgO green sheet applied panels showed low luminance and current density. The efficiency was almost same as the conventional e-beam MgO panel.

This paper classifies driving technologies for AMOLEDs by the driving TFT conditions in pixels. A saturation region operation type driving TFT circuit provides good stability of OLED because of constant current drive. However, complicated compensation circuits are necessary to avoid effect of the TFT characteristics deviation. On the other hand, a linear region operation type driving TFT circuit provides better uniformity of the display image and lower power consumption. However, the stability of OLED is critical because of constant voltage drive.

A new voltage-scaled compensation pixel which employs 3 p-type poly-Si TFTs and 2 capacitors without additional control line has been proposed and verified. The proposed pixel does not employ the $V_{TH}$ memorizing and cancellation, but scales down the inevitable $V_{TH}$ variation of poly-Si TFT. Also the troublesome narrow input range of $V_{DATA}$ is increased and the $V_{DD}$ supply voltage drop is suppressed. In our experimental results, the OLED current error is successfully compensated by easily controlling the proposed voltage scaling effects.

We have developed a four mask LTPS TFT p-channel process and fabricated active matrix backplanes based on a pixel circuit with three TFTs and one storage capacitor. Top emitting AMOLED displays have been produced to prove the working principle of the active matrix.

A high data accuracy and low power consumption driving method and output stage of the source driver are proposed for the LTPS TFT-LCD in mobile applications. The proposed driving method is insensitive to the variations of the electrical characteristics of TFTs, which enables the output errors of the source driver are under 1/2 LSB in all gray levels. In addition, the power consumption of the driver with the method is decreased to 9.9mW which is 55.9% of that of the conventional source driver by reducing unnecessary charge waste.

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

The light and energy-efficiency of classical liquid crystal displays is notoriously poor due to the use of absorption-based linear polarisers and colour filters. For instance, the light efficiency of PVAL polarisers is typically between 40 and 45 % and the colour filters have a typical efficiency below 35 % which results in a total light and energy-efficiency of the display below 10 %. In the past, a variety of polarizers were developed with an enhanced efficiency in generating linearly polarized light. Typically, these polarizers are based on the polarisationselective reflection, scattering or refraction of light i.e. one polarisation direction of light is directly transmitted to the LCD/viewer and the other polarization direction of light is depolarised and recycled which results in a typical efficiency for generating linearly polarized light of 70-85 %. Also, special colour filters have been proposed based on chiral-nematic reactive mesogens which increase the efficiency of generating colour. Despite the enormous progress in this field, a need persists for improved methods for generating polarized light and colour based on low cost optical components with a high efficiency. Here, the use of holographic phase gratings is reported for the generation of polarized light and colour. The phase grating are recorded in a photopolymer which is coated onto a backor frontlight for LCDs. Typically the recording is performed in the transmisson mode or in the waveguiding mode and slanted phase gratings are generated with their refractive index modulation at an angle between 20o and 45o with the normal of the substrate. It is shown that phase gratings with a high refractive index modulation and a high efficiency can be generated by a proper selection of the photopolymer and illumination conditions. These phase gratings coupleout linearly polarized light with a high contrast (> 100) and the light is directed directly to the LCD/viewer without the need for redirection foils. Dependent on the type of phase grating, the different colours are coupled-out at a slightly different angle which potentially increases the efficiency of classical colour filters. Moreover, the phase gratings are completely transparent in direct view which opens the possibility to use them in frontlights for LCDs. Holographic polarization gratings posses a periodic pattern in the polarization state of light (and not in the intensity of light). A periodic pattern in the polarization direction of linearly polarized light is obtained upon interference of two circularly polarized laser beams. In the second part of the lecture, it is shown that these periodic polarization patterns can be recorded in a linear photo-polymerizable polymer (LPP) and that such an alignment layer induces a period rotation in the director of (reactive and non-reactive) liquid crystals. By a proper design, optical components can be produced with only first order diffraction and with a very high efficiency (>0.98). It is shown that these diffraction gratings are potentially useful in projection displays with a high brightness and energy efficiency

Recently, studies on orientation of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (LC) and CNTs effects on electro-optic characteristics of the LC device have been performed. In this paper, we summarize interaction nature between CNT and LC, local distortion of the LC director field by motion of CNTs, and effects on electro-optic performances of LC device.

We investigated the electrooptical properties of a carbon nanotube (CNT)-doped nematic liquid crystal (LC) cell. Experimental results reveal that the doped CNTs influence the elastic constant of LC-CNT dispersion. Using a small amount of CNT dopant, the rise time of the LC cell is nearly invariant; the threshold voltage of the cell increases due to the increase in the elastic constant of LC-CNT dispersion. At a higher CNT concentration, the marked increase in the dielectric anisotropy of LC-CNT dispersion markedly decreases the rise time and threshold voltage of the LC cell. The fall time of this cell decreases with increasing CNT concentration due to the increase in elastic constant and the slight increase in viscosity of LC-CNT dispersion. The rise time and the fall time of the LC cell are decreased simultaneously when the LC host is doped with a moderate amount of CNT dopant.

High-quality a-Si TFTs were fabricated on 7 inch plastic PES substrates at $130^{\circ}C$ and $100^{\circ}C$. It had been shown that the key factor for successful TFT fabrication on the relatively large plastic substrates is thorough control of total active layer's stress by means of deposition temperature reduction and single layer's intrinsic stress optimization.

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of $160^{\circ}C$ with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of $10\;{\mu}m$ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

We present a low temperature thermal process for the color photoresist on the flexible substrate for the LCD color filter module by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional color photoresist. By this method the curing temperature can be lowered by more than $100^{\circ}C$, and the curing process time also can be shortening by more than 20 min.

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

The Chair of Display Technology at the University of Stuttgart develops various technologies for active matrix applications. Last year we presented an LTPS active matrix process without the need for ion implantation. This process is compared to other AM processes and the technological demands for different applications are discussed.

In this paper, we proposed a novel TFT-LCD pixel structure to compensate ${\Delta}V_p$, which is a maximum value of 1.82V in conventional pixel structure without compensation. We achieved a maximum value of 60mV in proposed pixel structure by integrating a dummy switch TFT in each pixel. The proposed TFT-LCD pixel structure with a remarkably reduced ${\Delta}V_p$ allows ultra high picture quality AMLCDs.

We have developed the VIC (Viewing-angle Image Control) TFT-LCD, which can change viewing-angle from $80^{\circ}$ to $170^{\circ}$. This display has the same thickness and weight as existing TFT-LCD, because it is made of only single LC cell without additional components. Moreover, we developed ways to protect effectively the displayed information in narrow viewing angle mode.

We have developed the world's thinnest flexible electrophoretic displays (EPDs). The thin-film displays are 95 ..m thick, which is nearly the same thickness as a standard sheet of paper. Weighing 0.44g including external connection cables, these displays are also probably the world's lightest. We have also developed 7.1-inch-diagonal(paperback-sized) high-resolution flexible EPDs. The displays are large enough to be used as practical e-paper. More than 7 million transistors work correctly on plastic, enabling us to see 3-megapixel images. These flexible displays include active-matrix TFT devices that are fabricated using Suftla transfer technology. Suftla technology demonstrates the potential to achieve thin, flexible displays that will be used as an e-paper in the near future.

Microcavity plasma devices having characteristic dimensions below $100\;{\mu}m$ have been investigated as a candidate for the next generation of plasma displays. Arrays of inverted pyramid microcavity devices, fabricated in Si with emitting apertures of $(50\;{\mu}m)^2$ and designed for AC or bipolar excitation, demonstrate a luminous efficacy above 6 lm/W at pressures up to and beyond one atmosphere of Ne/Xe mixtures. Also the design of analogous microplasma devices in ceramic multilayer structures or plastic substrates is disccussed.

In this study, a stripe type counter electrode discharge cell for PDP was attempted to realize high luminance efficiency and low firing voltage for fine pitch discharge cells. The cells were prepared using electroplated Cu/Ni electrodes coated with glass dielectric layer. The discharge behaviors of such cells were observed. These results indicate that the counter electrode discharge cells have different discharge behavior compared with coplanar cells, which may affect the luminance efficiency of the panel.

We propose a new PDP cell structure named DIDE (Dual Ignition Discharge Electrodes) structure with a long electrode gap to realize a high luminous efficacy. Suggested DIDE structure basically has a long electrode gap $(200{\mu}m{\sim}400{\mu}m)$, nevertheless, because of auxiliary electrodes formed on the front panel, can be driven at relatively low voltage. The discharge characteristic of DIDE structure was much different from that of conventional structure, which was analyzed by IR emission images using IICCD (Image Intensified Charge Coupled Device). The study can explain some particular characteristics of DIDE structure. As a result, the long electrode gap and low voltage effect can be expected in DIDE structure, and a very high luminous efficacy of 7.5 lm/W has been achieved in monochrome green test panel adopting the new cell structure with Ne-Xe (12%) mixture at 400 torr.

We propose a new method to achieve well-defined surface properties of the polymeric gate dielectrics without using SAM technique and inserting another organic/inorganic buffer layer. Pentacene thin film transistors(OTFTs) fabricated with the polyimide gate insulators with different side chain structures were demonstrated. Further, a relationship between the surface properties (surface morphology, surface energy, etc) of the films and the performance of OTFTs have investigated, which will be given in more detail in presentation.

A number of research groups and companies have succeeded in employing various SLS schemes to create low defect-density Si films on glass substrates for making high performance TFTs. In this paper, we first point out that SLS can be utilized to just as effectively handle crystallization of thin Si films on polymer substrates, and then present preliminary results on high-performance circuits that are built using the materials.

The influence of various process parameters for the as-deposited poly silicon was investigated. The polycrystalline silicon films were successfully deposited on glass substrates at a low-temperature $(<200^{\circ}C)$ using the catalytic chemical vapor deposition (Cat-CVD). We achieved a low hydrogen content $({\sim}0.9%)$ and a high deposition rate $({\sim}35{\AA}/sec)$. The film is applicable to thin film transistors on plastic substrates.

The Process technology for uniform SLS poly-Si and performance enhancement of furnace activated poly-Si TFTs are reported. By strictly optimizing SLS optics, threshold voltage variation in pixel TFTs was remarkably decreased and the non-uniformity such as SLS shot mark was removed. Optimized doping process for low sheet resistance and passivation annealing are critical for the enhancement of device performances.

Self-heating induced device degradation and its width/length (W/L) dimension dependence were studied in p-type polycrystalline silicon (poly-Si) thin film transistors (TFTs). Negative channel conductance was observed under high power region of output curve, which was mainly caused by hole trapping into gate oxide and also by trap state generation by self-heating effect. Self-heating effect became aggravated as W/L ratio was increased, which was understood by the differences in heat dissipation capability. By reducing applied power density normalized to TFT area, self-heating induced degradation could be reduced.

In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

An investigation of the transport properties of polysilicon TFTs, using sequential laterally solidified, SLS, material, is presented. This material has a location controlled distribution of grain boundaries, GBs, which makes it particularly useful for the analysis of their influence on the performance of polysilicon TFTs, and to address the issue of the role of spatially localised trapping states. The experimental results were analyzed by using numerical simulations, and the effective medium approximation was compared with a discrete grain model.

It is said that first year of e-Paper was 2004, when "sigma-Book" (LCD) by Panasonic and e-Book "Librie" (EPD) by Sony were introduced in the market. After that, many prototypes of e-Paper have followed in 2005. And also the related technologies have been evolved. I summarize the present status of e-Paper technologies and then propose the future trend.

For decades, the pursuit of volume commercialization of low-power reflective displays with a paper-like look has been an unfulfilled dream. While steady technical progress was made throughout the late 1990s, there were still no volume products incorporating electronic paper displays (EPD) on the market. Now, microencapsulated electrophoretic display technology, also called electronic ink, has moved into volume production with a frontplane laminate (FPL) display component called E Ink Imaging Film™. This film is coated roll to roll on a flexible plastic substrate and integrated into a display module. Today, all-plastic segmented displays are being shipped as well as displays with electronic ink FPL being driven by glass TFT backplanes. A roadmap to active matrix flexible electrophoretic displays is being enabled by rapid technical progress on flexible TFT backplanes by a variety companies. Each of the approaches to these backplanes and flexible active matrix displays has different advantages for the various market segments being pursued including large format flexible displays for e-news and other reader applications, rollable displays for compact readers, and high resolution small format displays up to 400 ppi that can have fully integrated drive electronics to reduce size and drive down costs. Backplane approaches include Si on plastic, organic transistors on plastic, and Si transistors on flexible stainless steel substrate. Progress is also being made on next generation inks, including more reflective inks with higher contrast ratios. A full color 6 inch, 170 pixel per inch (PPI) active matrix display using a newer generation ink has been developed and this will be described and demonstrated. Large format segmented flexible displays will also be described.

Transparent conducting films were fabricated on polyethylene terephthalate substrate by a spray method using double-walled carbon nanotubes dispersed in organic solvent and water-based solution. We analyzed the films by absorption spectra, sheet resistance, and scanning electron microscopy. Transparent conducting films with high uniformity and high transparency were fabricated by the spray method. We found that the dispersion particularly nanodispersion of CNTs was of crucial importance to improve the film performance.

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.

We developed an 4.5" $192{\times}64$ active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is $800{\mu}m$ and $10{\mu}m$ respectively and the driving OTFT has $1200{\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5\;cm^2/V{\cdot}sec$, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

LTPS TFT backplanes for AM OLED displays have advantages in regard to reliability and performance compared to TFT backplanes based on amorphous silicon. However, the requirements for homogeneous laser crystallization during LTPS process are much higher than for LCD backplanes. Most important is the energy stability of the laser source. In this paper we describe a new excimer laser which meets the requirements of LTPS manufacturing process with high homogeneity.

In this study, the characteristics of large area internal linear ICP sources of $1,020mm{\times}920mm$ (substrate area is $880mm{\times}660mm$) were investigated using a multiple linear antennas with U-type parallel connection. Using the multiple linear antennas with U-type parallel connection, a high plasma density of $2{\times}10^{11}/cm^3$ and a high power transfer efficiency of about 88% could be obtained at 5kW of RF power and with 20mTorr Ar. A low plasma potential of less than 26V and a low electron temperature of $2.6{\sim}3.2eV$ could be also obtained. The measured plasma uniformity on the substrate size of 4th generation $(880mm{\times}660mm)$ was about 4%, therefore, it is believed that the multiple linear antennas with U-type parallel connection can be successfully applicable to the large area flat panel display processing.

A new type of diffractive spatial optical modulators, named SOM, has been developed by Samsung Electro-Mechanics for projection display and other applications. A laser display in full HD format $(1920{\times}1080)$ was successfully demonstrated by using prototype projection engines having SOM devices, signal processing circuits, and projection optics.

We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

LED is promising for the application of specialty illumination. Thiscolor management system, V-core, with LED light sources and the structure of V-core for LCoS projector has been proposed to improve the primary saturation, uniformity and contrast. We designed the high efficient LED modules for high brightness requirement. The LED module can operate in narrow-direction indicator, $12^{\circ}$.

Smooth picture module is operated by vibration to tilt the light from the DMD (digital micro mirror device) of DLP projection TV, which makes the screen of the TV smoother and DMD chip cost lower. To satisfy the vibration characteristics of smooth picture module, it is designed by optimizing moment of inertia, spring constant and damping coefficient, using structural and fluid dynamic simulation that showed a good agreement with experimental data. To reduce the material cost and moment of inertia, engineering plastic is used and the reliability is estimated. A VCM (voice coil motor) type actuator for smooth picture has to satisfy performance requirements such as higher driving force, lower power consumption, and lower cost. The initial design and optimization for VCM was performed using FE analysis. It allowed us to optimize the design of magnetic circuit of the proposed actuator to obtain higher force while maintaining a lower cost.

We review work performed by our group and collaborators in the area of exciton formation. There are three components: (i) measurement of singlet fractions, (ii) analysis of magnetic resonance measurements, and (iii) models of exciton formation. We find that the fraction of singlet excitons is a controllable quantity, pointing the way to a new generation of all-fluorescent organic light emitting devices.

Unlike the case of $Ir(ppy)_3$, various aggregates of PtOEP including dimer are formed in PtOEP-doped films and neat film. Such a difference is due to difference of competition among solid state solvation effect, dipole-dipole interactions between dopant molecules, and intermolecular covalent bonding.

A series of images were displayed on an OLED display placed within a digital still camera body to characterize the aging of the OLED display in a realistic environment and with an image set that matches actual consumer usage as closely as possible. The aging characteristics of the OLED display were measured and shown to meet the requirements of a digital still camera application by a wide margin.

Lead zirconate titanate(PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties. In this study, high- performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).

The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.

We have developed ZnO TFT array using conventional photolithography and wet etching processes. Transparent 20 nm of ultra thin ZnO film deposited by means of plasma enhanced atomic layer deposition at $100^{\circ}C$ was used for the active channel. The ZnO TFT has a mobility of $0.59cm^2/V.s$, a threshold voltage of 7.2V, sub-threshold swing of 0.64V/dec., and an on/off ratio of $10^8$.

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

Sum-frequency vibrational spectroscopy (SFVS) has been used to study the molecular orientations at the polymer surfaces for liquid crystal alignment. Various molecular orientations appear at the surface depending on various types of surface treatments and polymers.

We demonstrate novel soft-lithographic techniques for preparing patterned liquid crystal (LC) orientations at an alignment layer. By controlling patterning conditions such as wetting property and operating temperature depending on polymeric materials, multi-directional or modified LC alignment conditions can be simply achieved.

Pixel structure of the fringe-field switching (FFS) mode to improve transmittance has been studied. New FFS structures related to the electrode structure at the edges of pixel, and the pixel electrode width and distance between electrodes was optimized. The former improves transmittance by minimizing the region of disclination lines. The latter improves it by increasing light efficiency above center of electrodes and also response time.

A new method to get reliable viewing angle measurements on LCD reflective display is presented. This method is based on the use of commercial Fourier optics viewing angle instruments already proposed by ELDIM for more than 15 years. This apparatus is capable to measure simultaneously quasi all the incidence and azimuth angles and to control very precisely the illumination of the sample. We show that, in contrast to other instruments, a clever illumination procedure with two different conditions allows separation of the intrinsic reflective contribution of the display and of the parasitic front end reflection. In this way, intrinsic performances of the display can be obtained at any incidence and azimuth angles and realistic observer conditions can be simulated.

GE has developed a plastic substrate technology comprised of a superior high-heat polycarbonate substrate film and a unique transparent coating package that provides the ultrahigh barrier to moisture and oxygen, and chemical resistance to solvents used in device fabrication. This contribution will update recent progresses made at GEFlexible Ultra-high Gas Barrier Substrate for Organic Electronics on ultra-high barrier coated plastic substrate, both in batch mode and in roll-to-roll mode

DuPont Teijin Films (DTF) have developed engineered substrates specifically for the flexible electronics market. $Teonex^{(R)}Q65$ is a biaxially oriented crystalline polyester with a tailored surface and it is emerging as a competitive material for the base substrate in OLED displays and active matrix backplanes. Given the dimensional reproducibility requirements in the display applications, uncontrolled moisture absorption during the processing cycle could potentially be far more significant than the inherent shrinkage of the base substrate. Understanding these effects and optimising the processing steps involved in device manufacture will be critical to achieving the ultimate performance that can be achieved with the base substrate.

Add-Vision has developed a low-cost print technology for P-OLED displays on flexible substrates that meets several essentials for a new technology including: (1) Functionality including low DC voltage and wide color gamut; (2) Utilization of inexpensive tools; (3) Performance matching entry applications and markets. AVI's process is based on large-area printing of a combination of doped emissive and air-stable cathode inks utilizing truly low-cost tools to create printed P-OLEDs.

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

The inline manufacturing equipment using a combination of the belt source and LPS source which is innovatively designed is introduced for the largesize AMOLED. The features of the inline system include 60sec TACT time, 19 numbers of chambers, non-substrate bending and easy application to very thin TFT substrates for the $4^{th}$ - $8^{th}$ Generation AMOLEDs.

This paper presents a novel electrostatic drop-on-demand inkjet device featured by a MEMS fabricated pole-type and hole-type nozzle with tube shaped orifice and investigates the feasibility of applying the inkjet device to display fabrication process. The electric voltage signal applied to the ring shaped upper electrode plate, against the hole-shaped ground or pole-shaped ground, referred here pole-type and hole-type nozzle respectively, allows ejection of small droplet to take place: That is, a tiny droplet is taken away from the peak of the mountain shaped liquid meniscus formed at the nozzle orifice. It is verified experimentally that the use of the pole type nozzle allows a stable and sustainable micro-dripping mode of droplet ejection for a wider range of applied voltages and of liquid viscosities. This demonstrates a feasibility of electrostatic drop-on-demand inkjet device as a disruptive alternative to conventional print heads such as thermal bubble or piezoelectric inkjet heads.

A novel quantified method based on requirement analysis of image quality to improve display image quality was proposed. Nowadays, the image quality was limited by the poor understanding of the image quality requirement, which led to the critical factors of image quality could not be controlled during display development. Our method was set up to resolve this problem by clarifying the relationship between the image quality level and the effect factors in image processing. Moreover, the subjective factors were eliminated extremely by the image quality quantification. The method was applied in the RPTV development life cycle and its efficiency was demonstrated.

Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

Due to the stricter requests of the human perception of images, many industrial standards such as TCO'03 have been made to survey the Flat Panel Displays (FPD) nowadays. The angular-dependence luminance uniformity is an important item to evaluate the performance of FPD. In this article, we focus on the above test item base on TCO'03 standard in the case of vertical direction of ${\pm}15^{\circ}$. With controlling the driving voltage toward the liquid crystals of TN-type TFT-LCD, there exists a voltage-driving range which can achieve the value of the $L_{max}/L_{min}$ at ${\pm}15^{\circ}\;{\leq}1.7$ readily. Both experiment and simulation have been well analysis.

We developed a Flat Fluorescent Lamp(FFL) with a high luminance by using the same discharge mode as PDP. Our FFL has the simple and unique structure where the glass substrates are used as dielectric layers. The panel has a striped line shape of 7 inch diagonal size. The Xe-Ne-He mixture gas was used to generate the plasma, and the gas discharge characteristics under both total gas pressure and partial gas pressure were investigated. The panel showed a maximum high luminance $7,270cd/m^2$ under bias of 20KHz pulse of 3KV.

By adjusting driving voltage, the image quality and optical characteristics have been improved. Based on the experiment results. Optical properties including viewing angle and color shifts at bias voltage 2.4 V are better than those of bias voltage 1 V.

Accompanied by the demand of thin type TV, the application of the TFT LCD display device is more and more extensive. The key material which influences the optical performance of the TFT LCD is optical film. Due to the rapid development of the big size TFT LCD for the recent years, the supply has been unable to meet the demand for its relative material. Therefore, we bring up a alternate choice-the hybrid compensation film which could not only show well optical performance, but also lessen the quantity of usage in TAC in order to make the optical film free of shortage.

Influence of polarizer with different haze value on the optical properties of TFT-LCD TV has been investigated. According to the results, a optimum optical performance can be achieved by using the polarizer with proper haze value.

So far, we have done much research improving quality of LCD TV. Recently, we have developed 26" WXGA LCD TV by advance fringe field switching (AFFS) technology with smooth and every scene realistic in color image that obtained from the amazing authentic color delivery, optical characteristic and fast response time. Our upgrade device has shown the brightness over 600nits (Color shift <0.015 and Transmittance ratio > 5.5%), gray to gray response time under 6ms, contrast ratio over 1200:1 and viewing angle over 178/178, respectively. And also, motion artifacts improved by fast response of LC with low viscosity, cell gap and dielectric constant.

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

We have developed twist nematic liquid crystal displays (TN-LCDs), of which the viewing angle can be controlled. The TN-LCDs have the function of switching between the wide viewing mode and narrow viewing angle mode using two tilted LC layers. Tilt angles of the two LC layers, $14^{\circ}$ and $60^{\circ}$ were required in both wide viewing angle and narrow viewing angle modes, respectively. In this way, the viewing angle range in terms of contrast ratio 5:1 can be switched from $120^{\circ}$ to $60^{\circ}$.

Zinc oxide nanocrystals are attractive candidates for a solution-processable semiconductor for high performance thin film field effect transistors. We have studied ZnO thin film transistor fabricated by solution process and have improved $V_{th}$ by controlling the ZnO ink additives. Synthesized ZnO nanoparticles of 30nm were dispersed in solvent to make the ZnO ink. ZnO ink was spin coated on silicon wafer and after heat treatment electrodes were patterned.

Zinc oxide (ZnO) is typically highly doped n-type semiconductor. To be used for thin-film transistor (TFT) devices, carrier concentration must be controlled precisely. We studied characteristics of ZnO grown by MOCVD at temperatures between $200^{\circ}C$ and $400^{\circ}C$. We found that hydrogen incorporated during growth plays important role in determining carrier density.

Properties of silicon nitride ($SiN_x$) film including physical and electrical characteristics have been studied for improving the stability of hydrogenated amorphous silicon thin-film transistors (a-Si TFTs) in active-matrix liquid-crystal displays (AMLCDs). The instability of a-Si:H TFTs is estimated by accelerated stress test of both bias-temperature stress and bias-illumination stress. The results show that the deposition conditions of $SiN_x$ films with higher power and lower pressure are the best choice for improving the on-current and stability of TFTs.

$NiCl_2$ vapor was introduced into conventional furnace to conduct vapor-induced crystallization (VIC) process. We made the metal chloride atmosphere by sublimating the $NiCl_2$ compound. The $NiCl_2$ atmosphere enhanced the crystallization of amorphous silicon thin films. As the result, polycrystalline Si film with large grain size and low metal contamination has been obtained.

The dependence of n-channel 2 shot SLS poly-Si TFT characteristics on the DOS (density of states) parameters was investigated by using a device simulation. Device performances were most sensitive to the DOS of poly-Si/gate insulator (GI) interface and poly-Si active layer. Deep level states at the poly-Si/GI interfaces strongly affect the subthreshold slope.

In this paper, we present a new system, OPTISCOPE SA, especially designed for precise measurement of temporal behavior of LCD displays. We show that gray to gray level response time measurement requires a very sensitive and precise instrument and also that the capacity to measure luminance levels and gamma curve can be useful. Quite often, precise evaluation of LCD response time needs also use of low pass and stop band filters to suppress noise and flicker. Low pass filters affect the results but can be corrected for simple temporal behaviors. For complex temporal behaviors like those observed for overdriven LCDs, we show that direct adjustment of theoretical responses is much more efficient to get a complete picture of the temporal behavior of such displays.

The effect of stress match between silicon nitride ($SiN_2$) and hydrogenated amorphous silicon (a-Si:H) layers on the electrical characteristics of thin-film transistors (TFTs) has been investigated. The result shows that modifying the deposition conditions of a Si:H and $SiN_2$ thin films can reduce the stress mismatch at a-Si:H/SiNx interface. Moreover, for best a-Si:H TFT characteristics, the internal stress of gate $SiN_2$ layer with slightly nitrogen-rich should be matched with that of a-Si:H channel layer. The ON current, field-effect mobility, and stability of TFTs can be enhanced by controlling the stress match between a-Si:H and gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a-Si:H and SiNx layer, and the good dielectric quality of the bottom nitride layer.

As the film transistor-liquid crystal display (TFTLCD) panels become larger and provide higher resolution, the propagation delay of row and column lines, the voltage modulation of Vcom, and the response time of liquid crystal affect the display images now more than in the past. It is more important to understand the electrical characteristic of TFT-LCD panels these days. This paper describes the electrical model of a 15-inch XGA ($1024{\times}768$) TFT-LCD panel. The parasitic resistance and capacitance of its panel are obtained by 3D simulation of a sub pixel. The accuracy of these data is verified by the measured values in an actual panel [1]. The developed panel simulation platform, the equivalent circuit of a 15-inch XGA panel, is simulated by HSPICE. The results of simulation are compared with those of experiment, according to changing the width of signal. Especially, the proposed simulation platform for modeling TFTLCD panels can be applied to large size LCD TVs. It can help panel and circuit designers to verify their ideas without making actual panels and circuits.

In this paper, we propose a method for automatic generation of equivalent circuit for unit cell of LCDTV. In order to extract a circuit model, computer program generates electrical connectivity of resistors and capacitors from the layout through pattern analysis with electrode and port information. For combining two types of independent equivalent circuits, we propose a node insertion algorithm. As a consequence, we can generate an equivalent RC circuit without increasing the capacitive elements.

We have demonstrated a transflective liquid crystal display (LCD) with a single cell gap in a patterned vertically aligned mode. In our configuration, the different electrode structure in a transmissive and a reflective part was suggested to compensate an optical path difference of each region. As the result, the similar electro-optic characteristic of each region was obtained which results in an enhanced performance of the device. Moreover, suggested technique can be highly effective to realize the practical transflective LCD due to the simple fabrication process.

The hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) with copper as source and drain electrode has been fabricated to obtain its transfer characteristics and stressed with positive and negative bias to investigate the instability variation comparing to conventional MoW-Al based TFT device. The results show that there is no copper diffusion into active layer of a-Si:H TFT, even during the thermal process. In addition, a 15-inch XGA a Si:H TFT LCD display utilizing Cu as gate electrodes has been developed.

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

Although LCD market has been divided so far into high-end market with S-IPS & SPVA and low-en market with TN mode, TN MNT has been striving towards bigger share in large and high-resolution wide display market as well. LG.Philips LCD has developed 20.1 inch and 22.0 inch WSXGA+ wide monitor mainly focusing on the low cost based on high brightness, fast R/T, high color gamut and wide viewing angle.

A simple SPICE model for the description of the on-current of low-temperature poly-silicon thin film transistors is proposed. By employing constant mobility, $V_GS$ dependent alpha parameter, and exponential kink effect, very good agreements between the model and measurement were obtained.

Directionally solidified Si films obtained via line-scan SLS can lead to attainment of high-mobility TFTs. The crystallographic texture of the resultant materials can potentially be an important factor because the spatial details thereof may impact the overall device uniformity. Here, we present EBSD analysis of these materials that reveal the existence of relatively large domains with different textures and differing amounts of defects, which in turn, may adversely affect device uniformity.

Uniformity and performance characteristics of LTPS TFTs are important parameters for making advanced active-matrix displays. In this paper, we describe an SLS-based crystallization approach for producing orientation-controlled Si films with reduced concentrations of planar defects that stand to potentially deliver unprecedented levels of device uniformity and performance. Specifically, a 2-step process referred to as hybrid SLS has been developed that produces a variety of high-quality {100} surface-oriented Si films.

Cinnamate polymers are well known photoreactive polymers due to [2+2] cycloaddition reaction of cinnamate side group. In this work, we have found that the cinnamate side groups could be also reacted by thermal energy, and this reaction is presumed to attribute to the radical reaction of carbon double bond in the cinnamate groups. Contrary to the photocycloaddition reaction of the cinnamate side groups, the thermal reaction of cinnamate side group was closely related to the flexibility of polymer backbone. The difference of the mechanism between the photocycloaddition reaction and thermal crosslinking reaction was confirmed by $^1H-NMR$$ and $^{13}C-NMR$ analysis of the model compound.

The alignment of liquid crystal (LC) is one of the key issues of liquid crystal display (LCD) technologies. In this study, we aligned polyimide (as the LC alignment layer) by ALT plasma beam and to realize the stability and characteristics of this technology. The characteristics such as anchoring energy, pre-tilt angle, voltage holding ratio(VHR) and residual direct current(Rdc) were discussed. Besides, we applied it to the in plane switch (IPS) mode 23" WXGA real panel, the performance parameters and electrical properties were measured and compared with those of rubbing alignment. From the result, we demonstrated a successful LC alignment treatment process in real panel by ALT plasma beam.

In this paper, we confirmed the yellowish gravity-mura phenomenon in Fringe-Field Switching (FFS) mode using 2-D simulation. As the cell gap increases, while the LC efficiency of blue wavelength remains almost same, that of red and green wavelength increases continuously. As a result, yellowish phenomenon occurs.

We have developed a RGB polymer dispersed liquid crystal film (RGB PDLC). To obtain the color display, color pigments are mixed in the prepolymer. We have presented an electro-optical performance of our cell and analyzed the electro optical properties for varying LC/ pre-polymer ratio and polymer type.

The ion adsorption on an aligning layer deposited onto a conductive electrode in a liquid crystal (LC) cell has been shown to depend strongly on the dielectric constants of the layer and its thickness d. Calculations made in the framework of the three-layer electrostatic theory showed that, depending on those and other intrinsic parameter of the problems, it is possible to observe either ion attraction or repulsion at the aligning surface. Tentative measurements of the ion adsorption dynamics on the aligning layers with various d qualitatively agree with the theory. The results obtained allow the memory effect in LCs and the sticking effect in LC displays (LCDs) to be controlled effectively.

In-plane-switching (IPS)-mode LCD is one of the most useful technologies for a broad range of viewing angles. To apply for IPS-LCDs, we synthesized novel homogeneous alignment materials, changing dianhydrides (BTDA and BPDA) and bridged diamines (ODA and PACM). We measured their pre-tilt angles using the crystal rotation method with positive LC and their surface properties.

We studied the nematic liquid crystal (NLC) alignment capability by the Ion beam (IB) alignment method on a NDLC (Nitrogen doped Diamond Like Carbon) as a C:H thin film, and investigated electro-optical (EO) performances of the IB aligned In plane switching (IPS) cell with NDLC surface. A good LC alignment by IB exposure on a NDLC surface was achieved. Monodomain alignment of the IB aligned IPS cell can be observed. The good electro-optical characteristics of the IB aligned IPS cell was observed with oblique IB exposure on the NDLC as a-C:H thin film for 1min.

A simple wide-viewing-angle solution of electrically controlled birefringence (ECB) LCD is proposed, which is based on a single discotic compensation film. The use of a single discotic film instead of two leads to a considerable reduction in cost while high performance is maintained.

In the paper we have proposed a fabrication method for color reflective cholesteric LCD by an in-plane switching. By applying an in plane electric field, the cholesteric helix could be partially unwound, which lead to shift of selective reflection and exhibition of color change.

In order to understand the origin of liquid crystal orientation on a surface of photoaligning polymer polyvinyl-fluoro-cinnamate (PVCN-F), we used FTIR, AFM, UV/Vis and XPS techniques as well as we studied the rejuvenation of the photoalignment after repeated UV exposure with mutually perpendicular polarization. We found that both photodimerization of cinnamoil moieties and their trans-cis isomerisation contribute to the light-induced anchoring on PVCN-F surface, and trans-cis isomerisation is responsible for the rejuvenation of the photoalignment.

We have studied the optical properties of the biaxial film such as fast axis, retardance and the change of polarization state between crossed polarizer using dual rotating retarder polarimeter. We have developed a novel simulation model, which could explain well the experimental results, and found that it could be used to optimize the compensation film in LCD for improving wide-viewing property.

In this paper we report the influence of rubbing direction and electrode distance to the voltage dependent transmittance in in-plane switching (IPS) mode. Moreover, we applied this to a transflective IPS cell to realize a single gamma characteristics both in the transmissive part and the reflective part..

We demonstrate the vertical alignment of liquid crystal on $a-SiO_x$ film surface using the ion beam exposure. Liquid crystal can be aligned vertically by the rotational oblique evaporation of $a-SiO_x$ film. However, the electro-optic switching behavior of liquid crystal along random directions results in disclination lines. We found that we can achieve highly uniform alignment of liquid crystal without disclination lines by using the ion beam exposure. We found from XRD and XPS data that the vertical alignment can be achieved when x approaches 1.5 at the $a-SiO_x$ film surface. We have shown that the pretilt angle can be controlled by changing ion beam parameters, such as the ion beam energy, the angle of incidence, and the exposure time. We found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers. We also have shown that a liquid crystal cell aligned vertically by the ion beam exposure exhibits the voltage-transmittance curve similar to that of a rubbed polyimide cell.

We propose a transflective In-Plane Switching mode in which patterned retarder is placed only on the reflective area of the upper substrate side. By selecting optic axes of Half Wavelength Plate and Liquid Crystal as 24 and 90 degree with respect to polarizer, condition of low reflectance for visible wavelength range at black state is found.

In order to increase the transmittance of panel, in process of FFS TFT-LCD, fine patterning process which is adopted to the optimum passivation(PVX) hole was applied fine metal line patterning process and was made with optimum efficiency of liquid crystal by using space/bar size control of pixel electrode. We fabricated 2.03" mobile FFS devices with fine patterning process. Further, this technology will be applied to the basis of other process for higher PPI or higher aperture ratio technology.

In this work, we provided a novel test method to verify the sealing materials for flexible LCD cell. The ultraviolet type curing sealing material with low process temperature was suitable for LCD cell assembly. We also proposed the sealing materials which passed 13200 times bending test within 20 mm curvature.

We observed the destruction of the liquid crystal alignment with the repeating scan of strong DC electric field. The strong electric field seems to force the alignment to be scarred permanently and it accumulated with the repetition. In this report we connected alignment destruction behavior and electric field strength to obtain information on the alignment strength. And we compared the behavior between different alignment techniques.

Orientational alignment patterns proved that they are very useful for realizing diverse properties of liquid crystals. Here we tried to produce the patterns combining interfered laser light and double irradiations. A photo-isomerizable polymer doped with azo dye, which induce uniform liquid crystal alignment to the uniform laser irradiation, was used as the alignment layer. Double irradiations into two orthogonal directions brought the orientation patterns similar to the checkerboard. It indicates the possibility of bistability on those patterns.

We studied for high transmittance panel technology in the FFS mode. We found that fine slit of pixel electrode makes increase of panel transmittance, and at the same time this structure has an issue which is increasing operation voltage (Vop). We analyzed the reason of high Vop in the FFS pixel with fine slit using two-dimensional LC analyses. Finally we suggest the solution which has high transmittance with suitable operating voltage.

We made plastic LCDs with Bistable Chiral-Splay Nematic (BCSN) LC mode for several types of spacers and investigated mechanical stability of them. The plastic BCSN LCDs used adhesive bead spacers have sufficient LC alignment stability against the mechanical shock and bending stress.

Four bent-core compounds were synthesized introducing ester linking group into mesogenic unit, varying the central unit with 1,6-, 1,7-, 2,3-, and 2,7-naphthylenes, and placing the dodecyloxy group in the terminal flexible unit. The structures of four compounds were identified by FT-IR and $^1H$ NMR spectroscopy, and the results were in accordance with expected molecular formula. The mesomorphic properties were investigated by differential scanning calorimetry and polarizing optical microscopy.

The synthesis of ester type, banana-shaped, photo - crosslinkable mesogens is described. The reactive mesogens, derivatives of 1,3-phenylene bis{4-[4'- (alken-1-yloxy)-biphenyl-4-carboxylate]benzoate}s, were synthesized varying the length of alkyl end groups. The obtained monomers and polymers were characterized by FT/IR, NMR spectroscopy, DSC, polarized optical microscopy, and X-ray diffractometry.

In this paper we model the liquid crystal director field in the Patterned Vertical Alignment (PVA) LC using the fast Q-tensor method, which can model multidimensional director configurations with defects in the liquid crystal director field. We observed the dynamic behaviors of the defect experimentally by applying the voltage and modeled the LC director field with defect in the active area of the PVA cell. As a result, we could also calculate the optical transmittance.

According to the experiment results, the alignment of FLC cell can become more uniform at thick cell gap by adjusting the amplitude of the aligned AC electric field which is applying to the FLC cell during $N^{\ast}-SmC^{\ast}$ phase transition. If the amplitude of AC electric field is high enough, the FLC molecules forced with the amplitude and aligned to a particular direction.

In order to satisfy with the clear visibility without any difficulties such as blurring and tailing, the high refreshing rate technology and fast response time of LC itself were applied to TFT-LCDs. In proportion to the decrease of holding time of 1 frame, the fast transition of LC behavior was necessary to both maintain the luminance and minimize the tailing appearance. The introduction of a new LC mixture for faster response times was realized by the good combination of newly introduced dielectrically neutral LC material so called 'Super Low Viscosity' (SLV) and highly polar $CF_2O-linkage$ LC material. This resulted in about a 20% reduction in the ${\gamma}_1$ of the new LC mixture compared to the references. In accordance with a new LC mixture with low ${\gamma}_1$, fast response time of 5ms has been made for S-IPS LCD TV application. Consequently, by applying the high frame frequency of 120Hz driving alongside the 5ms response time characteristics, the MPRT value was reduced by half.

In-plane switching characteristics of PI rubbed ITO sandwich cell with low molecule FLC (ferroelectric liquid crystal) surface was investigated. FLC on the surface is governed by the applying frequency and surface condition. By controlling the Ps (spontaneous polarization) direction of dual FLC surfaces, switching characteristics are improved without change of cell structure.

This study was made to examine the electromagnetic interference(EMI) shielding effect (SE) of multilayered thin films in which indium-tin oxide(ITO) and Ag were deposited alternately from 3layer to 9 layer on Poly Methyl Meth Acrylate(PMMA) substrate at room temperature using a PF sputtering. We measured optical and electrical characteristics by UV-spectrometer and 4 point probe. The measurement of EMI SE in frequency range from 50MHz to 1.5GHz was performed by using ASTM D4935-89 method. We compared the measured EMI SEs with theoretical simulation data. We obtained relatively low resistivity and high transmittance from the EMI SE multilayers. In this study, we obtain good optical electrical characteristics with a minimun transmittance of about 60% at 550nm wavelength and sheet resistance of $2{\sim}3ohm/sq$., respectivity. Measured EMI SEs were over 50dB and similar to theoretical simulation data.

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

The contact resistivity of the black interlayer which has been introduced between BUS and ITO electrodes in a plasma display panel was evaluated using two kinds of specially designed test electrode patterns. Of the two, type 2 pattern was able to evaluate the contact resistivity more successfully, which was calculated as about $250{\Omega}$ in the suggested test pattern structure.

Twin Auxiliary Electrodes were applied to the counter sustain electrode structure plasma display panels for the improvement of luminous efficiency. In advanced, we investigated the spatiotemporal behaviors of excited $Xe^{\ast\ast}(2p)$ atoms in that structure unit cell with various applied voltage conditions for the auxiliary electrodes. The near-IR emissions were observed by an ICCD camera combined with narrow band pass filter. As a partial result, the intensity of IR emissions and the response time were improved with the proposed twin auxiliary electrodes.

Effects of the evaporation rate of MgO films using electron beam were investigated on the MgO properties and the discharge characteristics of the plasma display panel (PDP). The evaporation rate was changed from 3 ${\AA}/sec$ to 15 ${\AA}/sec$ at a substrate temperature of $300\;^{\circ}C$. MgO properties such as crystal orientation, surface roughness, contact angle, and film structure were inspected using XPS, AFM, drop shape analysis and SEM. We also studied the relation between MgO properties and PDP discharging characteristics. The minimum firing voltage and maximum efficacy were obtained at evaporation rate of 5 ${\AA}/sec$. In the MgO film deposited at 5 ${\AA}/sec$, (200) orientation was most intensive and surface roughness was minimum.

The detailed studies regarding to the front and rear panel geometries and optical properties of composed layers were needed to improve the luminance and efficiency. 3-dimensional optical code can be used to analyze the variation of geometries and the changing of optical properties. The visible light distributions and illuminance results were simulated depending on the bus electrode position, ITO geometries and optical properties of dielectric layer. As the ITO area was decreased and the bus electrode was located at the outer part of cell, the illumination was increased. And we could find quantification which is related between dielectric layer and visible light distribution of PDP cell.

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

Plasma Display Panels(PDPs) suffer from motion artifacts because of subfield driving method. In this paper, a modified motion compensation method is proposed. We apply the optimized mapping table to the higher subfield group and the fill-up method to the lower subfield group to generate optimum mapping patterns. This method does not concentrate 'on' mappings on higher subfields. Therefore it can possibly become a more robust motion compensation.

The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

Barrier ribs in plasma display panels (PDPs) function to maintain the discharge space between the glass plates as well as to prevent optical cross-talking. The barrier ribs currently employed are typically $300{\mu}m$ pitch, $110{\sim}120{\mu}m$ in height, with upper and lower widths of $50{\mu}m$ and $80{\mu}m$, respectively. It has been reported that barrier ribs can be fabricated by screen-printing, sand blasting, etching and photolithographic processes. In this study, photosensitive barrier rib pastes were formulated and systematically evaluated in terms of photolithographic process variables such as printing, drying, UV exposure, development and sintering. It was found that the use of UV absorbent, polymerization inhibitor and surfactant were very effective in controlling the width uniformity of barrier ribs in the photolithographic method of barrier rib patterning.

The improvement of luminous efficacy is one of the major issues in PDP industry. In this work, we propose the new driving method for high efficiency AC-PDP and analyze its discharge characteristics. The suggested method can control the effective capacitance of panel by external auxiliary capacitor. External capacitor induces reduction of gap voltage proportional to the panel current, this in turn modifies the transient behaviour of discharge. The peak current level is reduced and the discharge duration is increased. As a result of these modifications, the luminous efficacy is enhanced by about 200% compared with the conventional driving method

In an attempt to reduce processing cost and to improve resolution of PDPs, micro mold transfer processing route for barrier ribs of plasma display panel was developed. In this study, the parameters that may cause defects during the process were identified, which include the shrinkage during UV curing process, stress due to evaporation of organic components, and sintering shrinkage. Considering such parameters, UV curable paste was developed and barrier ribs of PDPs were successfully processed via the process. In addition, the process was successfully applied for the processing of barrier ribs with embedded counter electrodes.

In an attempt to enhance secondary electron emission characteristics of PDP, $12CaO{\cdot}7Al_2O_3$ electride was used as electron emission layer of PDP discharge cells. The compound was synthesized by Ca-treatment and its electron emission behavior during the glow discharge was measured. The results indicated that the spayed electride reduces the discharge voltage by ${\sim}20$ volts and decrease the discharge delay by more than 70%.

With the high sustain frequency at 250 kHz, a three-dimensional diagnostics of excited xenon atoms was investigated by the emission and absorption microscopic spectroscopy for plasma display panels, spatiotemporally. As a typical feature of the emissions, a broad discharge peak was observed on the temporal cathode and a sharp one was monitored on the anode, at the high frequency. However, the discharge starts from the cathode edge, actually, that is a discharge space on the floated address (or data) electrode. Spatially, the dense emission and absorption peak were observed in the discharge space between the sustain electrodes gap. Overall, the microdischarge at high sustain frequency showed priming dominant characteristics.

In this experiment, we have investigated that the transported space charge between sub-pixels in AC-plasma cell discharge. The test pulse 30 V, $5{\mu}s$ was applied to the address electrodes of neighbor cells of discharge occurred cells. And we have measured the transported space charge between sub-pixels in accordance with the various last sustain pulse widths t(time gap between the rising edges of sustain and test pulses) of 0.2 to $3{\mu}s$. It was observed that the peak value of transported space charge has been shown to be 21.5pC at $1.0{\mu}s$. And the IR peak value have been occured after $0.51{\mu}s$ with respect to sustain voltage.

A relationship between discharge delay time and the aging method were investigated: A-Y (Address electrode - Scan electrode) aging and conventional X-Y(Common electrode - Scan electrode) aging with the variation of sustain voltage beyond self-erasing discharge. Although A-Y aging decreases discharge delay time, it has several drawbacks like non-uniformity of discharge, degradation of luminous efficiency and a color temperature. In a conventional aging condition which is carried out near the mid-margin voltage, discharge delay time is short in low voltage and high frequency condition. As an alternative to conventional voltage aging, high voltage aging is suggested which is carried out at self-erasing sustain voltage region. High voltage aging shows lower discharge delay time and fast aging speed than conventional voltage aging.

Phosphate glass system is expected to be useful as a lead-free material in many devices in plasma display panels (PDP). The present study is mainly focused on the evaluation of interface reaction between ceramic fillers and phosphate glass matrix for barrier ribs in PDP. The results suggest that properties of barrier rib depend on the crystallization behavior and interface reaction between the fillers and glass matrix.

It is suggested that the bismate glass system is one of alternatives to the lead glass for barrier-ribs in PDP. Moreover it is necessary to investigate the resultant change in properties with addition of ceramic fillers. Glass frit was selected to be a $Bi_2O_3-ZnO-B_2O_3-Al_2O_3$ and two fillers, ZnO and $Al_2O_3$ were added into a glass matrix with the different content. We investigated thermal, chemical properties of bismate glass system with two different fillers. We confirmed that addition of fillers effects properties of composites such as the thermal expansion coefficient, etching mechanism.

The picture quality of a plasma display panel is very sensitive to the phosphor characteristics such as luminescence, decay time, surface properties, and even longevity of phosphor material in itself. In our previous work, the discharging characteristics in green cell of PDP were demonstrated to be enhanced by coating $Zn_2SiO_4:Mn^{2+}$ phosphors with positively charged metal oxide such as MgO. Here, $Zn_2SiO_4:Mn^{2+}$ phosphors were coated by various metal oxides for examining the coating effect on the picture quality. Specially, longevity while fabricating the panel was investigated for panel application in this work. Also the effects of ion and electron bombardment on the phosphor surface will be discussed in this work.

It is important to keep a constant transmittance of dielectric during firing. To control the shrinkage and fusion stage of frits in firing, we used a hot stage microscope (HSM) to analyze the thermal properties of the lead and bismate glass frits by the in-situ method. This research would be useful for improving the reliability of transmittance of dielectric during firing in industry using a large furnace with temperature deviation.

We have measured the excited Xe atoms density in the $1s_5$ metastable states by laser absorption spectroscopy in accordance with various barrier ribs. In this experiment, the average density of one cell in the panel with stripe barrier rib has been measured to be $1.8{\times}10^{12}cm^{-3}$. The panel with close type barrier rib has been measured to be $5.1{\times}10^{12}cm^{-3}$.

In this work we compared different sources of composition of Ag powders obtained by dry and wet process on the photolithographic patterning of PDP electrode and resistance of sintered Ag electrode. It was found that 90 : 10 wt% ratio of Ag powder made by dry and wet processes gave optimum result both on the PDP electrode pattern and resistance of PDP electrode after sintering.

Deep-blue organic light-emitting diodes (OLEDs) with/without ultra-thin LiF layer inserted at the interface between hole-blocking and electron-transporting layers have been fabricated and investigated. The fundamental structures of the OLEDs are ITO/m-MTDATA/NPB/BCP/LiF (with/ without)/ $Alq_3/LiF/Al.Deep$ blue light emission with CIE coordinate of (0.15, 0.11) has been achieved for all devices. Further, by inserting LiF with thickness of 1nm at the interface between BCP and $Alq_3$ layer, the luminous efficiency as well as the power efficiency is much improved compared to that without. The enhancement of electron injection due to insertion of LiF may account for this improvement.

White organic LED spectrum for lighting and displaying should be designed for high luminous efficiency as well as good chromaticity coordinate, pleasant correlated color temperature and color rendering. A program based on Matlab was made to make these calculations convenient. The chromaticity coordinate and luminous efficiency was calculated according to the CIE 1931 colorimetric system, while the correlated color temperature(CCT) was calculated based on CIE 1960 UCS diagram. The color rendering characteristics were evaluated according to the CIE Color Rendering Index (CRI), using Ra, Ri and ${\bigtriangleup}E$ from the 14 color samples defined in CIE13.3.

An optical model based on the optical thin-film theory is derived to calculate the output radiance of small molecules organic light-emitting diodes (OLEDs). We have designed the high efficiency OLEDs using the reflectance phase control of dielectric layers. It is found that OLED with a single $TiO_2$ dielectric layer is a good candidate to enhance the outcoupling efficiency and increase the color purity.

The surface of ITO in OLEDs was treated with $HfO_x$ deposition process using an atomic layer chemical vapor deposition system. The treatment at room temperature for 5 cycles exhibited significantly improved electroluminescent characteristics compared to the OLEDs without any treatment, which is believed to be caused by the increased holes injection efficiency.

In this paper, the inorganic multi-layer encapsulation of thin film was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from level of $0.57g/m^2/day$ (bare substrate) to $1^{\ast}10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicate that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

Organic light-emitting diodes (OLEDs) based on the double wide band gap emissive layers in the range of 380 nm to 440 nm are reported. An efficient electroluminescence with a maximum at 400nm was observed at room temperature under a forward bias about 10V. With the wide band gap organic materials for near-ultraviolet emission, the low operating voltage (5V) and high current efficiency (3 cd/A) have been obtained at $2mA/cm^2$

New blue light emitting branched molecules were synthesized by reacting 3,5-bis-(3,5-bis-benzyloxy)- benzoic moiety or 3,5-bis-(3,5-bis-benzyloxy-benzyloxy)- benzoic moiety with biscarbazolyl vinyl biphenyl moiety by dicyclohexylcarbodiimide (DCC) catalyzed esterification. Similar synthetic strategy was also applied to prepare a red light emitting dendrimer. In this paper, we described two blue emitting dendrimers for investigating the effect of the dendronized structures on photoluminescence (PL) and electroluminescence (EL). EL properties of the dendrimers were investigated using heterostructured samples in detalil.

We report efficient inverted transparent blue OLEDs (ITOED) with an hole injection layer prepared by co-evaporation of $WO_3$ with NPB, which achieved a total current efficiency of 10.7 cd/A at $20mA/cm^2$ with light emits from both ITO bottom cathode and Au top anode in about 3:1 ratio.

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

We fabricated top emission organic light emitting diode (TEOLED) with transparent metal cathode Barium and Silver bilayer. Very thin Ba/Ag bilayer was deposited on the organic layer by thermal evaporation. This cathode shows high transmittance over 70% in visible range. And the device with a Ba-Ag has a low turn on voltage and good electrical properties.

We have fabricated white polymeric light-emitting devices (WPLEDs) from polyfluorene-based (PFO) blue and MEH-PPV polymer blending systems. A device structure of ITO / PEDOT:PSS / Blending polymer / Blue polymer / LiF / Al was employed. This structure of double emission layers results in the significant improvement of white color shift phenomenon. A current efficiency of 4.67 cd/A ($3,900cd/m^2$, 6.4V) and a brightness value of $17,600cd/m^2$ at 9.4 V with (0.34, 0.35) CIE coordinates at 5V and (0.29, 0.29) at 9V were obtained.

Highly stable organic electroluminescent devices have been achieved by treatment of thermal and electrical annealing. We investigate here the performance of theses devices at temperatures and pulse aging. We also demonstrate improved device stability due to thermal and electrical treatment, and the brightness decays at no treatment, thermal only, electrical only and thermal/electrical treatment were 86.6%, 89.5%, 93.0%, and 96.7%, respectively, in the after 150 h of operation driven with an initial luminance of $1,000\;cd/m^2$.

In this study, we fabricated white organic light emitting devices (WOLEDs) to use single emission layer, DPVBi with partially doped Rubrene. To realize white color, rubrene with 3.6% was partially doped with the gap from interface between DPVBi and hole transport layer NPD in a definite DPVBi layer. As the gap was increased, the intensity of orange peak grows less and less. The WOLED with gap of $5\;{\AA}$ has the best color stability and its color coordination is (0.345, 0.321) at 6V.

The chemical structure of the interface between Ag with $Li_2O$ and tri (8-hydroxyquinoline) aluminum (Alq) was investigated by using in-situ characterization of x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). $Li_2O$ on Ag had lower barrier height than LiF on Ag. XPS and UPS results show the interaction between $Li_2O$ and Alq leads to gap state formation in HOMO of Alq.

To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for $ITO/Alq_3/LiF/Al$ device structure. The admittance spectroscopic analysis of the devices with LiF layer shows reduction in contact resistance $(R_C)$, parallel resistance $(R_P)$ and increment in parallel capacitance $(C_P)$.

The metal chelate complex of aluminum 8-hydroxyquinolines $(Alq_3)$ is an important electro-luminescent (EL) material used in fabricating organic light emitting (OLEDs). In this work, diodes / displays using in house synthesized $Alq_3$ and simple structure have been fabricated. It is demonstrated that luminance of $12460\;cd/m^2$ and efficiency of 3.1 cd/A are achievable in these fluorescent devices. Possible degradation effects are analyzed.

The electrical and the optical properties of organic light-emitting devices (OLEDs), with and without various kinds of multiple heterostructures were investigated. The efficiency in green OLEDs were significantly enhanced by the structure of the multiple heterostructures acting as a hole transport layer (HTL) rather than by the number of periods. These results indicate that highly efficient green OLEDs utilizing multiple heterostructures acting as a HTL can be fabricated.

We have developed a self-aligned single isolation structure (SIS) and an asymmetric single isolation structure with an image reversal photoresist to increase the aperture ratio in a passive matrix organic light emitting display (PMOLED). Compared to the conventional structure, the fabrication process is reduced by about 17% and the aperture ratio is enlarged over 4%.

The efficiency stabilization and the color coordinates in blue organic light-emitting devices (OLEDs) with a double emitting layer (DEL) consisting of 4,4'-Bis(carbazol-9-yl)biphenyl (CBP) and 4,4'-Bis(2,2-diphenyl-ethen-1-yl)diphenyl were investigated. The efficiency of the OLEDs with a DEL did not significantly change with an increase in current density. The Commission Internationale de l'Eclairage coordinates of the OLEDs with a DEL 11 V were (0.150, 0.137), indicative of a deep blue color.

We have developed a novel thin film encapsulation method for thin-cathode OLED by introducing organic (not polymer)/inorganic multiple thin films to protect device, which is shown to slow down the permeation rate of moisture and oxygen. From the stability test of devices, the projected lifetime of thin-cathode OLED device with thin film encapsulation was similarly to that with glass lid encapsulation.

We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

The electrical and optical properties of electrophosphorescent organic light-emitting diodes (OLEDs) with modified hole blocking layer (HBL) were investigated. Well-known 2,9-dimethyl-4,7- diphenyl-1,10-phenanthroline (BCP) HBL is mixed with electrophosphorescent host material (4,4'-N,N'- dicarbazole-biphenyl: CBP) or electrophosphorescent dopant material (fac-tris(2-phenylpyridine) iridium: $Ir(ppy)_3$) or both. The highest external quantum efficiency was obtained in the device with $BCP-CBP-Ir(ppy)_3$ mixed HBL and we attribute this result to the additional charge recombination in mixed-HBL.

We proposed a simplified fabrication structure and method which can provide separate Red (R), Green (G), Blue (B), and White (W) OLED pixels with 2 metal-mask changes in emitting layer fabrication inspired from the structure of multi-layer white OLED and carrier blocking mechanism. A red emission layer for the R and W pixel with 1st mask, and then a blue emission layer with hole blocking layer for the B and W pixel with 2nd mask, and finally a common green emission layer were deposited sequentially. We expect that this concept would be very useful to the actual fabrication of multi-color OLED display although additional optimization is needed.

We fabricated white organic light emitting diodes consisting of three emitting layers of red-emitting DCM2 doped ${\alpha}-NPD$, blue-emitting DPVBi and green-emitting C545T doped Alq3. By optimizing the thickness of the hole-transport layer of ${\alpha}-NPD$ and the electron-transport layer of Alq3, efficient white OLEDs were obtained with a luminous efficiency of 4.40lm/W at luminance of $1000cd/m^2$, and a max-imum luminance of $51,939cd/m^2$

We report the synthesis and electroluminescent properties of new aromatic compounds as hole-transporting materials based on phenothiazine, such as 1,4-diphenothiazyl-benzene [DPtzB], 1,4-diphenothiazyl-xylene [DPtzX] and 9,10-diphenothiazyl-anthracene [DPtzA]. DPtzB thin film exhibited photoluminescence (PL) maximum emission peak and emission shoulder at 450 and 475nm, and maximum emission at 447nm without emission shoulder was found in DPtzX thin film. When DPtzA was excited by incident light of 359nm, DPtzA showed strong PL emission at 417nm and weak emission at 600nm. Luminance efficiency of DPtzB, DPtzX and DPtzA-based electroluminescence (EL) devices was 3.57, 3.46 and 0.47cd/A, and power efficiency of DPtzB, DPtzX and DPtzA-based EL devices was 1.48, 1.26 and 0.20lm/W.

We report synthesis and properties of new phenothiazyl polymer derivatives, Poly(10-octyl-10Hphenothiazine-3,7-diyl)(POP), Poly(2',3',6',7'-tertrakis-octyloxy-9-spirobifluorene-2,7-diyl) (PTOSF), and their random copolymers, Poly(10-octylphenothiazine-co-2',3',6',7'-tertrakis-octyloxy-9-spirobifluorene) (POTOSF). PL emission of POP, PTOSF and POTOSF copolymer were found to be 480, 434 and 484nm, respectively. EL emission peak of double-layer EL device of POTOSF was at 494nm (bluish green).

We report the transparent getter performance of $POCl_3$ and amine based system by using the acid-base reaction in the fastest chemical reaction for top emitting OLEDs. OLED device including synthesized getter component exhibited stable current-voltage curve after 500 hours under $60^{\circ}C$, 90% RH storage condition and showed stable surface performance until 520 hours.

We have demonstrated highly efficient WOLED with two separated emissive layers using a blue fluorescent dye and a red phosphorescent dye. The maximum luminous efficiency of the device was 11.2 cd/A at $20\;mA/cm^2$ and $CIE_{x,y}$ coordinates varied from (x = 0.33, y = 0.37) at 6V to (x = 0.25, y = 0.33) at 14V.

Ca/Ag double layer which is fabricated by thermal evaporation exists as the double layer of (Ca+O)/(Ag+Ca). In Ca layer, are crystalline Ca(OH)2 and amorphous Ca and in Ag layer, are crystalline Ag and amorphous Ca. And for the certain thickness of Ag, in the Ca/Ag double layer, the thicker Ca is, the higher transmittance is.

New iridium complex was synthesized and demonstrated a deep red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of 8320 cd/m2 at 15 V and the luminance efficiency of 2.5 cd/A at 20 mA/cm2 were achieved. The peak wavelength of the electroluminescence was at 626 nm with the CIE coordinates of (0.69, 0.30), and the device also showed a stable color chromaticity with various voltages.

Optical and electrical properties of various transparent conducting oxides (ITO, AZO, ITO/Ag/ITO, AZO/Ag/AZO) were investigated for anode of OLED display. ITO/Ag/ITO multi-layer anode has much better electrical and optical characteristics than other films, and OLED on that anode showed lower threshold voltage and better luminescence.

We proposed dual mode pixel circuit in AMOLED (active matrix organic light emitting device). After light emitting period of OLED, we used it as a photo sensor. We measured photo current of OLED and simulated the proposed pixel circuit to verify it's function of dual mode, that is lighting and sensing.

We have developed 2.4" QVGA wide color gamut LCD module using RGB-LED backlight. The color gamut is achieved 100% of NTSC compared to 70% of NTSC when used with White-LED backlight. But RGB LED backlight is difficult to maintain its color balance since RGB LED is gradually degraded by the change of ambient temperature and a long term aging characteristic, etc. This paper describes a feasibility study of our optical feedback system developed for preventing such a color shift.

There is provided white light illumination system including a radiation source, a first luminescent material having a peak emission wavelength of about 575 to about 620 nm, a second luminescent material having a peak emission wavelength of about 495 to about 550 nm, which is different from the first luminescent material and a third luminescent material having a peak emission wavelength of about 420 to about 480 nm, which is different from the first and second luminescent materials. The LED may be a UV LED and the luminescent materials may be a blend of three phosphors. A human observer perceives the combination of the blue, green and red phosphor emissions as white light.

An orange-emitting phosphor for inorganic electroluminescent device has been studied. Cu and Cl were co-doped in Mn-doped ZnS for a high-performing phosphor. The effect of $Mn^{2+}-doping$ concentration as well as $Mg^{2+}-sensitizer$ addition on the luminescence characteristics has been investigated.

$II-III_2-(S,Se)_4$ structured of phosphor have been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, europium doped $BaGa_2S_4$ was prepared by solid-state method and we try to look into an application possibility due to an emissive property of UV region. Also, general sulfide phosphors were synthesized by using injurious $H_2S\;CS_2$ gas. However, this study prepared $BaGa_2S_4:Eu^{2+}$ phosphor is addition to excess sulfur under 5% $H_2/95%\;N_2$ reduction atmosphere. So, this process could large scale synthesis because of non-harmfulness and simple process. The photo-luminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could apply to green phosphor for white LED of three wavelengths.

A three-band white LED was fabricated by combining a blue LED with SrGa2S4:Eu (green) and CaS:Eu (red) phosphors for improving the color gamut, which is favorable to full color image.

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

We investigate the effect of processing temperature of gate insulator and optical anisotropy on organic thin-film transistors (OTFTs). The insulator film which was processed lower temperature than solvent boiling temperature can lead more aligned pentacne molecules compare to higher processed insulator film. It finally gives rise to the big increase of carrier mobility in OTFTs, although there are little difference at the seriously affecting properties to device performance, for example roughness of gate insulator film.

We have developed a 2 inch LTPS-TFT AMOLED display with a top emission structure on a $50-{\mu}m-thick$ metal foil. The Active matrix back planes were fabricated with the p-channel LTPS TFT with a conventional pixel circuit consisting of 2 transistors and 1 capacitance. The p-channel TFTs on the metal foil exhibited the field-effect mobility of $22cm^2/Vs$. Finally, a images from prototype monochrome AMOLED displays are successfully presented, with $64{\times}88$ pixels and 56-ppi resolution.

Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material, solution processable gate dielectric layer for organic thin-film transistors (OTFTs) have been fabricated. The hybrid dielectrics are synthesized by the sol-gel process, followed by the heat-treatment at $190{\bullet}\;.{\bullet}$ To investigate the electrical property of hybrid dielectric, leakage current behavior and capacitance were measured. To fabricate coplanar-type OTFTs, Au/Cr electrode was deposited onto the heavily doped silicon substrate with the organic-inorganic hybrid dielectric layer and then ${\alpha},{\omega}-dihexylquaterthiophene$ was drop-cast between source and drain electrical performance of the fabricated transistor.

Using a chemical radical we modified the surface property of PET substrates. The chemically treated substrate surface improved dispersion of CNTs on substrate and provides suitable adhesion of CNTs to substrate. In addition, an ink-jet printed patterning technique effectively improved the transparency of transparent conductive CNT composite films.

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

Here we developed a conductive ink which contains silver nanoparticles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing. To fabricate a coplanar type OTFT, solution processable semiconducting oligomer, ${\alpha},{\omega}-dihexylquaterthiophene$ (DH4T) was drop-cast onto between the ink-jet printed silver electrodes and I-V characteristics were measured.

Here we report the effect of photo-spacer and polymer wall on the mechanical stability of the polymer-stabilized ferroelectric liquid crystal (PSFLC) system. A better bending tolerance of the PSFLC cell was obtained when the polymer wall was formed parallel to the rubbing direction. In addition, the effect of the distance between photo-spacer columns as well as that of the distance between polymer wall columns on the mechanical stability of the liquid crystal was examined.

In this research, we examined the correlation between the polymer wall boundary condition and the dynamic/ memory behavior of the ferroelectric liquid crystal (FLC) molecules. It was shown that the polymer wall perpendicular to the rubbing direction induces asymmetric switching to the rubbing direction and induce smaller cone angle angle of LC. On the contrary, in the cell with polymer wall parallel to the rubbing direction, the FLC molecules are oriented in the rubbing direction and shows symmetric switching and has larger cone angle. Memory behavior of each cell has strong correlation with the dynamic state of the FLC molecules. Response time of each cell was also examined.

By ink-jet printing method, organic thin-film transistors (OTFTs) having soluble 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS pentacene) as an active material were fabricated. The TIPS pentacene solution was made with chlorobenzene and anisole. The solutions were printed on poly (4-vinylphenol) (PVP) dielectric layers and source/drain electrodes by piezo-type heads for bottom contact OTFTs. The dielectric layers had untreated or HMDS-treated conditions. The chlorobenzene device showed the highest field effect mobility of $0.016\;cm^2/Vs$ and the anisole HMDS-treated device shows the highest $I_{on}/I_{off}$ ratio of $10^5$.

For the bottom-contact pentacene organic thin-film transistors (OTFTs), the insertion of a thin PMMA layer $(20{\AA})$ between the pentacene and the electrode improves the electrical performances, such as carrier mobility and on-current magnitude, about 4 times larger than those of the devices without the PMMA. The performance enhancement is presumably due to the decreased contact resistance between metal and pentacene by inserting the thin PMMA layer.

The Finite-difference time-domain (FDTD) method is used to directly solve Maxwell's equations, and the techniques required for optical simulation of Bragg reflections of cholesteric liquid crystal (ChLC) displays are introduced in this paper. The simulated results show that the color gamut of a ChLC display can be broadened by using of a circular polarizer on top surface of the ChLC film, and are examined by experiments.

In this study, nanocomposite layer composed of PMMA-co-MMA and $TiO_2$ was prepared by sol-gel process using TTIP as a precursor and was utilized as a gate insulator of OTFTs. The composite insulator provides the lower threshold voltage and the enhanced sub threshold slope of OTFTs mainly due to its higher dielectric constant than that of the bare PMMA-co-MMA. Consequently, it is demonstrated that the sol-gel process can open an interesting direction for the fabrication of high-performance OTFTs, and contribute for OTFTs to be feasible for real applications.

In this paper, we investigated the effect of solvent on electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs). The TIPS pentacene was spin coated by using chlorobenzene, p-xylene, chloroform and toluene as solvent. Fabricated OTFT with chlorobenzene showed field-effect mobility of $0.01\;cm^2/V{\cdot}s$, on/off ratio $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform the mobility was $5.8{\times}10^{-7}\;cm^2/Vs$, on/off ratio $1.1{\times}10^2$ and threshold voltage of 1.7 V.

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using an organic patterning methodology. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly (9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFTs fabricated using the LALO technique and is applicable for the larger area display.

The toner type paper-like display (PLD) has been developed with two polymer particles having opposite polarity which is composed of polymer, colorant and external additives (nano-sized silica). Nano-sized silica with triboelectric charge was used for the charge control agent (CCA) and influenced on the electrostatic properties of the silica-coated polymer particles. The PLD cell using silica-coated particles (200 seconds) had shown a good white appearance and low driving voltage. The result could be explained in terms of the surface morphology and the cohesiveness depending on the silica coating time.

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly- Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ${\sim}30\;cm^2/Vs$, on/off ratio of $10^5$ and threshold voltage of 5 V.

In this study, the effects of SAMs on the performance of OTFTs have been investigated. ALD technique was applied for the deposition of SAMs, which is an ultra-thin film deposition technique based on sequences of self-limiting surface reactions enabling thickness control on atomic scale. According to our investigation results, it is observed that the surface properties of the gate insulator was changed by SAMs, which allow pentacene molecules to be deposited in the upright direction on the gate insulator and hence the performance of OTFTs could be improved. These results will be discussed

Active layer patterned OTFT was obtained on a plastic substrate using the optimal growth condition of pentancene thin films as active layer and parylene thin films as passivation layer. Tranditional photolithography was performed to use a dry etch to pattern the material stack. The pentacene thin film and parylene thin film were deposited onto a plastic substrate using PC-OVD and CVD, respectively.

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. The PMMA and MNB layers are treated on gate insulator and source/drain (S/D, Au) before depositing pentacene to investigate device properties and pentacene growth. The sequence of surface treatment affects a device performance seriously. The ultra-thin PMMA (below 50A) was deposited on organic gate insulator and S/D metal by spin coating method, which showed no deterioration of on-state current (Ion) although bottom contact structure was exploited. We proposed that the reason of no contact resistance (Rc) increase may be due to a wettability difference in between PMMA / Au and PMMA / organic GI. As a result, the device treated by $PMMA\;{\rightarrow}\;MNB$ showed much better Ion behavior than those fabricated by $MNB\;{\rightarrow}\;PMMA$. We will report the important physical and electrical performance difference associated with surface treatment sequence.

We fabricated a flexible OTFT(organic thin film transistor) backplane for the electrophoretic display. The backplane was composed of $128{\times}96pixels$ on the Polyethylene Naphthalate substrate in which each pixel had one OTFT. The OTFTs employed bottom contact structure and used the cross-linked polyvinylphenol for gate insulator and pentacene for active layer

A mica has been introduced as a new substrate material for the fabrication of the poly-Si TFTs. A poly-Si film is produced on the mica substrate at $550^{\circ}C$ by the nickel-induced crystallization and the poly-Si TFTs on the mica substrate are successfully fabricated for the first time.

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

We have demonstrated the novel technique for spacing two flexible substrates in stable by using rigid pillar spacer array and micro-contact printing assembling technique. Specially designed columnar structure generates self-collected adhesive polymer feature results in a good adhesion and a high mechanical stability to the external bending deformations.

The novel oligomers were synthesized by Grignard reaction, the suzuki coupling reaction, etc. The oligomers were characterized by Infrared (IR), Mass spectrometer (MS). Their thermal properties were investigated by differential scanning calorimetry (DSC) and Thermogravimetric analysis (TGA). The new oligomers showed high thermal stability above $300^{\circ}C$.

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the metal coated CNT as a field emitter on which metal nanoparticles were coated by chemical modification. Metal nanoparticles, such as Ru, Pd, were synthesized by solution reduction method. The size of the metal nanoparticle has the range of 2 - 5 nm. Surface was modified chemically with the use of ionic surfactant which changed the surface charge of nanoparticles.

Dynamic Driving Carbon Nanotube Backlight Units (CNT-BLUs) can well utilize the persistence of their phosphor. This paper studies several dynamic driving schemes for the CNT-BLU developed by DTC/ITRI. Their illuminating efficiencies are experimentally evaluated. From these evaluations, this paper develops a new driving approach and even better efficiencies are obtained.

Carbon nanotubes (CNTs) have been significantly used for the field emitters for display applications. However, the lifetime of CNT emitters which are formed by screen printing technique is not guaranteed yet, because the constituents in CNT paste affect the lifetime of CNTs. The CNT pastes for screen printing are normally composed of organic vehicles (nitro cellulose, ethyl cellulose, etc) and additives (glass frits, ITO, etc) with CNTs. In this study, the effects of constituents in CNT pastes on the lifetime and emission characteristics of CNTs were investigated by thermal and electrical analysis. Use of glass frits worsened the lifetime and electron emission of CNTs. However, an addition of ITO to CNT paste rather improved the lifetime of CNTs. Degradation of CNTs was small when nitro cellulose was used in CNT paste as an organic vehicle.

The effect of surface treatment on CNT cathodes used in field emission displays was investigated. A liquid method using a polymer-based organic solution and a mechanical method were applied. The liquid method, using PVA(polyvinyl alcohol) showed high potential compared to the mechanical adhesive taping and rolling method used in the fabrication of CNT cathodes for large-sized field emission displays with high emission uniformity and a low cost.

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

This study investigates the effect of $NH_3$ gas upon the growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. It is considered that the CNT synthesis occurs mainly through two steps, clustering of catalyst particles and subsequent growth of CNTs. We thus introduced $NH_3$ during either an annealing or growth step. When $NH_3$ was fed only during annealing, CNTs grew longer and more highly crystalline with diameters unchanged. An addition of $NH_3$ during growth, however, resulted in shorter CNTs with lower crystallinity while increased their diameters. Vertically aligned, highly populated CNT samples showed poor field emission characteristics, leading us to apply post-treatments onto the CNT surface. The CNTs were treated by adhesive tapes or etched back by dc plasma of $N_2$ to reduce the population density and the radius of curvatures of CNTs. We discuss the morphological changes of CNTs and their field emission properties upon surface treatments.

In the CNT paste for field emission, PbO frit had a fatal influence on CNTs by accelerating a decomposition of CNTs during firing. In the thermogravimetric analysis on the mixtures of CNTs and other ingredients, it was evident that CNTs began to burn out at ${\sim}350^{\circ}C$ by reacting with PbO. This problem was overcome by replacing the PbO frit by the Pb-free frit such that most of CNTs could survive during firing. Consequently, the emission current of the CNT paste prepared using the lead-free frit was improved as much as 250 %, compared to the PbO-containing one. The CNT paste was further optimized by adding a dispersant, whose dispersibility was assessed by measuring the resistance of the paste. With 10% dispersant added, the emission properties of the paste was greatly enhanced as 50 times higher as those of the paste without a dispersant.

We have grown well-aligned carbon nanotube arrays on the selective areas by plasma enhanced chemical vapor deposition at the substrate temperature of $580\;^{\circ}C$. The selective areas for CNTs growth can be defined by photo lithography technology. The CNTs are uniformly grown on the areas regardless of island diameters. Electron emission currents were measured in a vacuum with a diode structure at room temperature. Uniform electron emission currents were achieved with $40\;{\mu}m$ island spacing with $5{\mu}m$ island diameter.

A simple new method to fabricate transparent carbon nanotube field emission devices was developed. The highly graphitized single wall carbon nanotubes were attached on Sn/ITO glass by arc discharge method. Post heat treatments below the deformation temperature of soda-lime glass guaranteed a good mechanical adhesion and electrical contact of the nanotubes. The Sn layer was oxidized below $400^{\circ}C$ and became transparent. As increasing the oxidation temperatures, the emission properties became stable and life time of emitter has been increased.

One-Drop-Filling (ODF) process is an advanced vacuum filling process in LCoS manufacture line. The merits not only increase the throughput of liquid crystal filling process but also reduce the number of equipments. Studying application of ODF process in LCoS panel manufacturing is the purpose of is this article. The accuracy of liquid crystal drop size, the stability of seal dispensing and the nozzle size etc. In the tiny panel manufacture are more important than those factors in normal panel manufacture.

Scintillation that is grainy patterns appeared on a screen has been one of a biggest issues in a rear projection TVs. In this paper, with focusing on the average size of random particle, it was proved that the particle size of calculated speckle and the one of measured scintillation are almost the equal. This result shows speckle phenomenon is an important factor of scintillation.

A new source follower circuit for the integrated circuit of AMLCDs is proposed. Active load is added and calibration operation is applied to compensate the circuits. Proposed circuit is capable of minimizing the variation from both timing and device variations through measured results, the uniformity and bias effect are discussed.

A new liquid crystal display (LCD) Data identified Time Extension (DiTEX) driving scheme with a high charged voltage is proposed. The different charged voltage owing to the differential charging time and various initial pixel-potential can be eliminated or diminished under this method. It is compatible with a 2-row inversion and can be realized into the commercial dual-sided gate circuits.

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two mode, "wake" and "sleep". The degradation of the circuit is retarded since the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

PM OLED has the line-disturbance when eyes can detect the driving line status in the shaking situation. It is closely related with the lighting intensity and the lighting time during the line driving. .In this paper we suggest the frame part method for eliminating lineflash appearance. Frame part is a driving method of PM OLED, which divides one frame into several inner-frame parts to reduce the color interference between closely related pixels and to lessen the lineflash appearance which disturbs viewer to perceive the images. Frame part groups one frame into several inner-frame parts and have inner-frame rate higher than the frame rate. Frame part could be used in most of applications in PM OLED systems to enhance the total performance of screen quality.

In this paper, we propose a modified cubic convolution interpolation for the enlargement or reduction of digital images using a pixel difference value. The proposed method has a low complexity: the number of multiplier of weighted value to calculate one pixel of a scaled image has seven less than that of cubic convolution interpolation has sixteen. We use the linear function of the cubic convolution and the difference pixel value for selecting interpolation methods. The proposed method is compared with the conventional one for the computational complexity and the image quality. The simulation results show that the proposed method has less computational complexity than one of the cubic convolution interpolation.

A circuit model simulating the electrical characteristics of EEFL(External Electrode Fluorescent Lamp) is proposed. The model is based on linear approximation that represents the equivalent resistance and capacitance as a function of power. Simulation waveforms and experimental results are presented to verify feasibility of the equivalent model.

Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

Integrated a-Si:H gate driver with high reliability has been designed and simulated. The proposed a-S:H gate driver has only one reset transistor under AC driving for P and output node. These reset transistors show much less degradation than those under DC driving. The simulation results show that the lifetime and response time are improved significantly compared with those of the prior circuit.

A display panel image data manipulator for SOP or SOG is presented. It is capable of all the shift operations for MPEG decoders, graphic processors and controllers as well as data pack, merging, bit split and reformation operations to improve speed and memory utilization. To alleviate poly-Si low yield, redundancy based fault recovery scheme is introduced utilizing regular structure.

An ultra low-power down-conversion level shifter using low temperature poly-crystalline silicon thin film transistors is proposed for mobile applications. The simulation result shows that the power consumption of the proposed circuits is only 17% and the propagation delay is 48% of those of the conventional cross-coupled level shifter without additional area. And the measured power consumption is only 21% of that of the crosscoupled level shifter.

A holding latch with level shifting function is proposed for power and cost effectiveness with low temperature polycrystalline silicon technology on the glass backplane. Layout area and power consumption of the proposed circuit are reduced by 10% and 52% compared with those of the typical structure which combines a static D-latch and a cross coupled level shifter for 2.2" qVGA panel, respectively.

A high speed analog buffer using polycrystalline silicon (poly-Si) thin film transistors (TFT) is proposed for 2.2-inch quarter video graphic adapter (qVGA) TFT-LCD panel. Simulation results show that the settling time of the proposed circuit is $10{\mu}sec$ in 2.2-inch qVGA and the power consumption of proposed analog buffer is $25{\mu}W$.

The technique presented in this paper maximizes LCD color performance by way of advanced gamma control technology. First, two gamma curves corresponding to two sub-pixels are mixed to minimize gamma distortion off-axis, then RGB gamma curve control is used to establish accurate on-axis color. Independent RGB curve control for each sub-pixel improves the LCD's performance both on- and off-axis.

Influences of anti-reflection surface treatment, radius of curvature and ambient illuminance on legibility of reflective-type displays were studied. The results showed that legibility mainly depended on the surface treatment. Better surface treatment also produced less visual fatigue after the letter-search task

A visual display is formed by picture elements, which are optically coupled to optical pathways through which light is supplied from light sources. Light sources, controlled by control hardware, transmit light to the optical pathways by scanning light from the light sources to different optical pathways. The light sources and the optical pathways are mutually oriented so that light from the light sources can be canned to different optical pathways to form the displayed image. Light sources can be mounted to a rotating mounting that rotates past static pathways that transmit coupled light to the waveguide screen.

We evaluated the usability of two kinds types of recently commercialized e-books through an analysis of their protocols, compared the time required to read an e-book with that for a paper book, and compared text display sizes that were easy to read for aged and young readers, under identical conditions. This showed clear problems with the usability of e-books for aged and young readers. It was found that it took longer for aged readers to read text in an e-book than for young readers, and that the size of text that aged readers found easy to read was different than for young readers.

We conducted visual perception experiments to determine the perception limits of motion blur based on human visual system at LCD TV's moving pictures. The motion blur can be expressed Blurred Edge Width (BEW). The results showed that the BEW of moving pictures should be below 3.4pixels (visual angle 4.2') at 3H distance in a living room environment.

Stereoscopic/autostereoscopic systems have been developed in order to express true 3D images, but have never had great success in the practical use. In order to apply 3D display to promising applications such as advertisements and games, we've developed a 42" 2D/3D switchable display. It has characteristics that don't require special glasses for 3D images, use multi-view technology for improving 3D viewing characteristics, and has a 2D/3D switching function to express dynamic 3D contents as well as conventional 2D contents.

The problem of the conflict between eye convergence and accommodation can be induced at Stereoscopic or multi-view 3D display system using binocular disparity. A multi-focus 3D display system was developed, which can solve the problem. LEDs are used instead of galvano scanner and laser to avoid mechanical moving part at the 3D display system.

We describe the 3D/2D convertible color display based on modified integral imaging. In the proposed method a color liquid crystal display panel is used as a transmission-type display panel and enables a color 3D/2D convertible display system. The principle of the proposed method will be explained and methods to overcome the color dispersion problem will be discussed also.

Integral imaging is a three-dimensional display method which has full parallax and continuous viewpoints. However, we found an error between the depth expressed by integral imaging and the depth perceived by the observer through binocular disparity. We analyze the depth perception errors of the threedimensional image constructed by integral imaging.

In this paper, we propose a non-linear interpolation of chrominance components based on the property of luminance signals to display color images effectively. The proposed method is more useful, in particular, for the images including stair-typed signal changes around edges. Experimental results show that the proposed method is superior to conventional methods in both objective and subjective performance.

The channel shape of FFL(Flat Fluorescent Lamp) was designed by optical simulation. It was possible to design and manufacture the channel in any shape using glass forming. The best suitable brightness uniformity of 83.7% was achieved.

In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

We focused on improving of the optical efficiency in the direct BLU. We could achieve the optical efficiency by reducing the thickness of BLU and processing the prism shapes on a reflection sheet. And we were able to reduce the Lamps.

Optical performances of micro-pyramid arrays were simulated by ray tracing technique for the application of backlight unit of LCD. The angular distribution of the luminance and the on-axis luminance gain depended on the apex angle, the refractive index, and the density of micro-pyramids. The on-axis luminance reached a maximum when the apex angle was $90^{\circ}$. It also increased as the density and the refractive index of micro-pyramids increased. The present result showed that highly-efficient optical sheet might become realized by adopting micropyramid array and corresponding development of manufacturing processes.

We developed a new configuration of polarized light out-coupling lightguide plate (LGP) in the LCD backlight. By collimating the light into the LGP, one linear polarization component experienced total internal reflection at the planar interface of LGP and anisotropic layer, whereas the orthogonal polarization was out-coupled in the normal direction through a birefringent layer and subsequent isotropic microstructures.

In this paper, we study the effect of substrate temperature on property of Ga doped ZnO (GZO) thin film for transparent conductive oxide (TCO).GZO thin films have been deposited on corning glass 1737 by D.C. magnetron sputtering. We investigated the structural and electrical properties of GZO films using the X-Ray Diffractometer(XRD), Field Emission Scanning Electron Microscopy(FESEM) and 4-points probe .

Due to its efficient red emission, $Eu^{3+}$ ion has been doped in various host materials. $GdCa_4B_3O_{10}:Eu^{3+}$ phosphor for red emission has been prepared by solid state reaction. Photoluminescence properties for the phosphor under UV and VUV excitation were investigated. The $GdCa_4B_3O_{10}:Eu^{3+}$ phosphor under both excitation conditions shows typical red emission spectrum centered at 611 nm with several weak peaks due to energy transfer from $^5D_O\;to\;^7F_J(J=1,2,3,4)$ of $Eu^{3+}$ ion. On the other hand, the activator content exhibiting the concentration quenching under UV and VUV irradiation is 10 mole% and 2.5 mole%, respectively.

A borate compound was adopted as new host material for $EU^{3+}$ activator. The $Eu^{3+}-doped\;YCa_3(GaO)_3(BO_3)_4$ (YCGB) phosphors were successfully synthesized. Also, their photoluminescence properties under the excitation of UV ray were measured. In the XRD patterns of the synthesized powders, most peaks were well-matched to a gaudefroyite phase. The emission of $Eu^{3+}$ in YCGB consists of a strong peak centered at 622 nm, which is attributed to $^5D_O-^7F_2$ transition of $Eu^{3+}$ and several weak peaks at near the wavelength. Optimum $Eu^{3+}$ concentration of the red phosphor under the excitation with the wavelength of 395 nm was about 75 mol%. This indicates that the red phosphor has a relatively higher critical concentration than that of the other $Eu^{3+}-doped$ phosphors. The dominant interaction character of $Eu^{3+}$ might be dipole-dipole interaction.

Optical filters consisting of dye containing Polymethyl methacrylate(PMMA) thick films have been fabricated by a tape casting method. Their optical properties have been investigated as functions of dye contents in films and the film thickness. The absorbance coefficient in 588nm and 830nm could be calculated from the results.

In this paper, a new technique has been adopted for synthesis of nanophosphor particles of $Y_2O_3:Eu$ at low temperature. The optical properties of the prepared nanophosphor particles have been measured and the results have been compared with the properties of its bulk phosphor particles. The particle sizes of $Y_2O_3:Eu$ nanophosphor powder with doped-Eu concentration of 10wt% synthesized by our procedure is about 40nm. When the concentration of Eu was 10wt%, intensity of PL appeared the highest and 95% efficient as compared with bulk phosphor.

The Cu-Ag nanoparticles have been synthesized in aqueous medium using a hydrazine reduction method. The assisted role of polymeric dispersant on synthesis of highly concentrated Cu-Ag nanoparticles was studied. The 30wt% of Cu-Ag nanoparticles with the range of 10 nm in diameter was prepared.

The voltage distribution of an external electrode fluorescent lamp(EEFL) having a gas pressure of 50 torr and a gas composition of Ne:Ar with a ratio of 90:10 has been estimated by varying the distance between the two external electrodes and monitoring the change of the lamp voltage. The estimated voltage gradient, which represents the electric field in the positive column of the EEFL, was very sensitive to the electrode area of EEFL and was in the range of $13\;{\sim}\;27\;V/cm$ at the electrode length of $15\;{\sim}\;31\;mm$. Changing the lamp current in the range $3\;{\sim}\;5\;mA$ did not make noticeable difference in the electric field of the positive column. Theses results may serve as basic data for the optimization of electric and optic characteristics of EEFL.

The CNTs are the most extensively studied material which are characterized by the complete property of matter, structure, and the large thermal conductivity (Thermal conductivity of $CNTs\;{\sim}>2000W/mK$ vs. Thermal conductivity of Aluminum ${\sim}\;>204W/mK$). Thus, they are successfully applied to the various fields. However, due to the strong agglomeration caused by the van der waal's force, their applications are limited. In the present study, a new method for CNTs dispersion was developed by using the mechanical dispersion, acid treatment, and then Cu was coated. This process produces CNTs/Cu nanocomposite powders, whereby the CNTs are homogeneously located within the Cu powders. The thermal properties of the CNTs/Cu nanocomposite were investigated.

We have studied ink-jet printing method for patterning of conductive line on flexible plastic substrates. Synthesized copper nano-particles of ${\sim}40\;nm$ were used for the conductive ink and the printed patterns exhibit a smooth line whose line width is about $100\;{\mu}m$.

In this study, a plasma flat fluorescent lamp having a new structure was fabricated by screen printing technique. Coplanar types of silver electrodes with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$ and $580^{\circ}C$, respectively. Phosphor was spin-coated on the dielectric layer with firing at $490^{\circ}C$. Several types of lamps were designed and its properties wee investigated with electrode shape, gas pressure, etc.

The transmittance of bare glass was enhanced up to about 20% by coating it with a PMMA (Poly Methyl Meta Acrylate) film mixed with silica gel. This lowrefractive- index film greatly reduces total reflection inevitable for bare glass, and thus will be useful for increasing the coupling-out efficiency of OLED.

Polymer Dispersed Liquid Crystal (PDLC) films, of which the liquid crystal has negative dielectric anisotropy, were prepared from the phase separation between MJ001317 and a variety of compositions of resins by common polymerization induced phase separation method. In this work, the effects of resin compositions have been systematically investigated and it was found that the morphology and size of droplet, which is closely related to electro-optic properties, mainly depend on the rate of polymerization and cross-linking density for each resin composition. The reverse mode PDLC films from this newly developed formulation containing TPGDA/EHA/HMPPO showed the good off-state transmittance, contrast ratio (19/1), and relatively low driving voltage(10V).

Silver paste curing process is very important in LCoS panel manufacture because incomplete curing process will cause poor bonding strength and increase resistance. The imperfection situation results in poor reliability and the variation of the common voltage, respectively. The change of the common voltage causes image flicker. According to Kinetics, we acquire activation energy by using dynamic DSC and compare two kinds of silver paste. From the result of isothermal DSC, we get optimum curing parameters to solve the flicker problem caused of incomplete curing of the silver paste.

Using a indium zinc oxide (IZO) alloy target with a ratio of 90:10 in wt%, highly transparent conducting oxide (TCO) thin films are prepared on polyethersulfone (PES) substrates by lowfrequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. Experiments were carried out as a function of applied voltage. At optimal deposition conditions, thin films of IZO with a sheet resistance of 29 ohm/sq. and an optical transmission of over 82 % in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation or any additional post-deposition annealing treatment.

Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

A new rod-like liquid crystalline monomer having divinyl terminal groups was synthesized and polymerized by using thiol-ene UV polymerization technique. High quality thin film with good retardation value was prepared on a rubbed alignment layer without the inert gas purging. The retardation value of the resulting film was controlled by experimental conditions such as spin speed, concentration, and spin time. From the retardation value and thickness measurement, ${\bigtriangleup}n$ was calculated to be 0.169 for the resulting film having thickness of 815.1 nm.

We study on the Electro Optical Properties of the EEFL (External Electrode Fluorescent Lamp) Backlight system is based on the lamp type characteristics and diameter of the lamp tube under the equal manufacturing of the lamps. In this contribution, through the analysis of the different lamp type and diameter of the lamp tube gain the effective luminance and reduce the lamp voltage from aspect in the electro optical properties with EEFL and LCD backlight system.

The color electronic paper display panel, which is fabricated with about $300\;{\mu}m$ width of each color pixel strip and is possible to integrated into a fundamental full-color flexible display prototype, is presented. The monolayer of close-packed color electrophoretic microcapsules is formed on the ITO electrode. The color pixel strips are composed of each color electrophoretic microcapsules (i.e., cyan, magenta, yellow, and black).

We could reduce the reflection from PET(polyethylene terephthalate) film surface by natural plasma etching which does not use etch masks. The plasma etched PET film showed lower reflectance and higher transmittance which is resulted by making subwavelength structure(SWS) on the film surface by the plasma etch rate difference between the amorphous and crystalline region in the surface of PET film.

We have proposed a novel cleaning technology with organic nanoparticles for high-performance TFT array. The surface of the TFT layer becomes more hydrophilic after cleaning by the nanoparticles. This is concluded from the comparison of contact angles for the samples cleaned by various methods. It is found that the drain currents in the subthreshold and off-state regions are less than those for the TFTs cleaned with conventional method.

We developed new anti-glare(AG) layer which has improved image quality and solved mechanical problems. Conventional silica-type AG has some restrictions related to sparkling, causing mechanical defects. The new anti-glare layer is designed with adjusted optical factors and polymer type. Therefore new anti-glare layer meets two main characteristics at once using unmatched optical property between scattering in material and surrounding.

We report on carbon nano-fibers (CNFs) for applying to epoxy as a highly thermal conductive adhesive. In order to fabricate CNFs, electro-spinning process was performed with polyacrylonitrile (PAN) solutions. The sample was stabilized at the annealing temperature of $360^{\circ}C$, and carbonized from 900 to $1100^{\circ}C$. It is shown that the synthesized CNFs have a good thermal conductivity of several hundred W/m K. LED backlight units (BLUs) fabricated with MPCB using CNF-mixed epoxy give a better heat dissipation and higher performance than normal LED BLUs. On the basis of SEM, XRD, and FTIR, the characteristics of CNFs are described.

Each type of optical sheets in a LCD module experiences a characteristic behavior for thermal loading and unloading. During thermal cycling, a polymeric behavior is reversible and recyclable, depending on a material stiffness critically affected by temperature and time. Some critical issues on temperature- and time-dependent themomechanical deformation of the polymeric sheet are addressed by finite-element thermal results, followed by structural simulation results in this study.

In this paper, the response surface modeling of the pretilt angle control in the nematic liquid crystal (NLC) on the homogeneous polyimide surface with different surface treatment is investigated The rubbing strength and the hard baking temperature are considered as input factors. After the design of experiments is performed, the process model is then explored using the response surface methodology. The analysis of variance is used to analyze the statistical significance and the effect plots are also investigated to examine the relationship between the process parameters and the response.

The high speed and sensitivity array test system has been developed and utilized for massproduction of advanced LTPS displays including SOG and OLED. It realizes fast enough TACT enabling 100% inspection with better than 1fF sensitivity. The result of actual measurement shows its superior TACT and sensitivity, and also shows MURA detection of OLED panel.

We propose a new electrical test method bringing repeatable and unambiguous test results eliminating drawbacks of the lighting test for LCD Cell manufacturing process. In this paper, we will show its basic concept, examples of actual test results and effectiveness of the method.

As OLED manufacturing matures, it requires larger substrate processing. The larger substrates require higher dispensing throughput for UV sealants. Jetting the gaskets of seal materials has provided an increase in performance and dispensing capability. This paper describes the jetting process and deposition capability for applying the UV sealants.

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

We developed a new ellipsometer for MURA detection. This ellipsometer can measure MURA along the slit line on the sample with high sensitivity, because this ellipsometer irradiates a slit beam onto the sample but can reject the reflected light from the back surface of the substrate. This ellipsometer is suitable for measuring MURA of the surface of sample with high sensitivity.

We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.

The electro-optic properties of an active-matrix polymer network liquid crystal display (AM-PNLCD) with crossed polarizer films to improve its contrast ratio were evaluated. By using crossed polarizer films, it shows good contrast ratio as well as wide viewing angle and adequate response time at normal TFT-twisted nematic (TN) LCD driving voltage (2.8V).

Potentials and advantages of recently proposed raised bus electrode plasma display panel is discussed in terms of luminous efficiency, addressing speed. Detailed experimental and simulation results, which shows mechanisms of high efficiency driving mechanism, will also be given. Apart from the cell structure, we introduce new high efficiency driving method that can be applicable to conventional ac Plasma Display Panel.

We describe the contrast enhancement of images using an APL(Average Picture Level) in an AC-PDP. A CEC(Contrast Enhancement Curve) determined by the APL was applied to enhance the contrast of images depending on the dominant gray levels. The most effective advantage of the proposed method is that it is easier to adjust the dynamic ranges to be enhanced with good quality and implement in a hardware system. The simulation result shows that the proposed method enhanced the contrast of given images significantly and kept the original brightness except the specific area of them compared to the HE(Histogram Equalization).

One of the factors deteriorating PDP image quality is the nonlinearity and nonuniform of output luminance as a function of input gray level. A novel method using modified ADS driving scheme is proposed to decrease this nonlinearity. It optimizes the reset pulse and adjusts the subfields, makes the relation of output luminance and input gray level almost linear. This method can be applied to general commercial PDPs.

We report a method for reducing the address discharge delay. The address discharge delay was reduced when the MgO protective layer was made on the dielectric area which was made rough intentionally. The delay reduction was more pronounced in the formative delay.

Inkjet printing technology can reduce the LCD color filter manufacturing cost more than 50 %. Uniform color filter patterning can be achieved only with proper ink and barrier materials. We developed new ink and black matrix materials for inkjet color filter. The ink materials have low volatility while they have very high solid content. The black matrix materials have very precisely controlled surface energy so that the inks can fill the pixels evenly and completely. We controlled the ink drop volume and ink material to minimize the thickness difference between the black matrix and the color pixel. Micron-order jetting position accuracy was achieved. We successfully printed 14.1" color filters using our ink and black matrix materials.

The WV film successfully enlarged the field of view of the TN mode and made TN popular for larger size applications such as PC monitors. The hybrid alignment of the PDM (polymerized discotic material) layer is also suited for the OCB mode, which is promising as a nextgeneration LCD-TV because of fast panel response and a wide viewing angle. This paper describes recent technological progress in WV films, especially for OCB.

We use the color separation grating (CSG) to split colored light into the sub-pixel of LCD to enhance the optical efficiency as compared with that of using color filter. Based on the Fresenl diffraction theory, the theoretical optical efficiency can reach 66-81%, ranging almost from 2 to 2.5 times of that using color filters.

A self-priming and photosensitive aqueous-basedevelopable benzocyclobutene (BCB)-based dielectric material curable in air is described. Patterned films have high resolution. Whether cured in nitrogen or in air, the formulation produces a film with optical, electrical, thermal, and mechanical properties desired for many microelectronic applications, such as a planarization layer or insulation layer in display applications. A self-priming, air-curable nonphoto- sensitive BCB material is also described.

We report on new transflective liquid crystal displays (LCDs) having a single cell gap and a single LC mode combined with an inner-patterned retarder. In a vertically or planarly aligned configuration the brightness is greatly improved and a single driving scheme can be employed.

So far, monostable and bistable LCD modes have independently been researched and developed. We introduce a novel liquid crystal display device that and be operated ad memory mode ad well ad dynamic mode. This device has a unique texture of splay, ${\pi}$ twist and bend states with applied voltages and is operated as a memory mode or dynamic mode by selective switching of two states among them. We also demonstrate electro-optical characteristics of the transmissive dual mode.

Depending on the optical design method, a novel dual-mode transflective LCD with proper LC material and optical films was developed. The design increased the optical transmittance and the reflectivity of dual-mode transflective LCDs with the proper parameters of cell gap, alignment layer and optical films. These parameters were evaluated by computer simulation. The simulation results also revealed that the transmissive and reflective states presented similar performance in the transflective LCDs.

A novel single cell gap transflective liquid crystal display was developed. By using the ink jet printing technology, we fabricated a transflective liquid crystal display with the hybrid alignment in the reflective region and the homogeneous alignment in the transmission region. Compared with the traditional technologies, our technology provided the advantages of easy process, high yield, fast throughput, and less material usage. We also applied this technology to the 2.4 inch prototype. This panel could be implemented in the handheld product applications.

We have developed self-aligned imprint lithography (SAIL) technology, an innovative method for roll-to-roll (R2R) fabrication of electronic devices on flexible plastic substrates. In this paper, we present the first R2R-produced ${\alpha}$-Si TFTs built on a polyimide substrate using the SAIL process, and prove the feasibility of this technology to enable R2R fabrication of flexible display active matrix (AM) backplanes with high precision and throughput.

We have developed $EPLaR^{TM}$, a new way of making flexible electrophoretic displays. The TFTs have the same good performance, reliability and mature manufacturing processes as TFTs used in LCD monitors and LCD-TVs. We are working with partners to show that plastic displays can be made in existing TFT-LCD factories alongside glass LCDS. In this talk we describe the EPLaR process and show results for TFT arrays on plastic made in a factory by standard ${\alpha}$-Si TFT processing.

The idea of displaying hologram electronically has been existed since mid $1960^{th}$. But it is still in the beginning stage due to the lacks of proper means of displaying and recording, which will bear the large amount of data contained in the hologram though holographic video and digital holography have demonstrated the possibility of displaying and photographing hologram electronically. It is expected that holography based 3 dimensional imaging system will be introduced much later than that on multiview 3 dimensional imaging methods which are being developed to generate more realistic and natural image than high definition plane images.

SDI has been developing mobile 3D display for years. For mobile applications, we adapted parallax barrier method. We have developed auto stereoscopic swing 3D display in which people can 3D image in both portrait and landscape mode. Furthermore to increase 3D resolution, we have developed a high resolution 3D display using time division multiplexing parallax barrier method

An improved 3D-2D convertible display system with enhanced depth and viewing angle is proposed. By using the optical structure of an LCD panel, it is possible to enhance the performance of the system and realize the 3D-2D conversion. Some preliminary experimental results will also be provided.

We have studied elemental image compatibility between integral imaging(II) and parallax generation(PG) system for three-dimensional display. The elemental images of PG can be obtained by recombination of the elemental images picked up in II system. The theoretical verification and the experimental results show that the elemental images of PG are in correspondence with the elemental images of II system with proper transformation conditions.

Tandem OLED structures formed by connecting two or more low-voltage electroluminescent units (stacks) are effective for achieving high efficiency at low current density as well as long operational lifetime. We have fabricated white emitting tandem structures with two or three low-voltage white-emitting stacks using transparent organic "PN"-type connectors. Three- stack white tandem structures with efficiency greater than 24 cd/A at D65 and operational stability of about 110,000 h. (extrapolated) at $1000\;cd/m^2$ have been demonstrated. With a stacked structure, the power consumption for displays using an RGBW format can be reduced by 25% compared to previously described formulations. We have also fabricated advanced white tandem structures where the color gamut (NTSC x,y ratio) has been improved to greater than 70% using standard color filters. The white OLEDs can also be used to increase the colorrendering index CRI (>80%), an important consideration for solid-state lighting.

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

Through the engineering of recombination region and energy transfer in organic light emitting device, blue and red light emitting device with good color stability has been successfully obtained. A Color control layer (CCL), which emits green light through the energy transfer from the emission layers, has been introduced into the blue and red light emitting device for RGB white OLED. The RGB white OLED showed the current efficiency of 13 cd/A and the CIE coordinates of (0.33, 0.38) at $1000\;cd/m^2$. The device exhibited very stable spectrum with respect to operating current density and the CIE coordinates varied from (0.34, 0.38) to (0.31, 0.37) for $100-22000\;cd/m^2$.

In this work, we fabricated efficient white organic light emitting device (WOLED) by the stack of complementary fluorescent dye-doped layers, Effect of dye-doping ratio and thickness of each layers on WOLED efficiency and emission spectrum was investigated. Moreover, out-coupling efficiency enhancement using microlens array was analyzed for bottom and top-emitting device architecture, leading to higher light extraction properties.

LCD business has grown up changing its strategy and main focus by the order of NBPC, MNT and TV for decades. The presence of PDP drives TV market more demanding. The performance of LCD is required to be improved to struggle against PDP. To strengthen the competitiveness in the market, IPS and VA have evolved in various structures such as H-IPS, AS-IPS, and S-PVA. The introduction of new structures which have multi domains requires the interpretation of disclination area. We developed a new simulation tool based on fast Q-tensor method. It enables us to predict the shape of disclinations and the resulting optical properties. We applied this simulation tool to the development of 26-inch wide monitor having H-IPS mode.

A novel photo-alignment scheme using normally incident periodically intensity-modulated UV light has been developed and demonstrated to efficiently yield a stable pretilt angle of nematic liquid crystals by single exposure. The scheme, referred to as the "photo-rubbing", consists in unidirectional scan of the intensity-modulated UV light over the photo-alignment film, which causes asymmetrical photo-reactions in the film. We show here its successful application to multi-domain alignment processing. Thanks to the normal incidence, the photo-rubbing removes the instrumental disadvantages of the conventional oblique incidence technique, thereby providing a true practical solution for photo-alignment.

The contrast ratio, brightness, and uniformity of S-IPS panel, whose alignment process was employed by ion-beam-alignment (IBA) technology, were improved significantly compared with the convention rubbing's panel, because the light leakage has been reduced in dark state effectively. The IBA technology could generate a panel whose pretilt angle was stable and low after post-treatment process.

Transient currents were measured in nematic liquid-crystal cells with and without doping of multiwalled carbon nanotubes. Comparative results suggest that the field-screening effect induced by the adsorbed charge is substantially suppressed by the carbon-nanotube dopant, leading to a reduction of the driving voltage and improved performance of display properties.

The total light efficiencies of the novel 1.9" transflective tRGB-t/rW and tRGB-rW TFT LCDs are calculated and they are implemented by the traditional 7-mask ${\alpha}$-Si processing. Then, the two vehicles are turned on with the appropriate Sub-Pixel Rendering White (SPRW) algorithms, so they can exhibit the extra luminance without the original visual resolution loss. Their outstanding optical properties are approved by measuring the contrast ratio (C.R.) and the NTSC ratio. Because they utilize the light resource very effectively and efficiently, they are very suitable for the dark indoor and the bright outdoor environments.

We introduce a modified UV-imprint lithography, a resin transfer from the template to the substrate. We analyzed this method by considering the surface and interfacial free energies of the template-resinsubstrate system. This technique is purely fast and applicable to large area patterning.

Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

A novel column spacer with concaved top surface has been made through conventional photolithography process. The mechanical characteristics of this spacer were also investigated by using load-unload cycle test. According to the experimental results, the deformation ratio of this new designed spacer is larger than that of conventional column spacers about two times in the lower loading stage. At the higher loading stage there is no obviously difference in deformation ratio between the new designed spacer and the conventional spacer.

LTPS has potential capability to realize various kinds of circuit integrations on panel glass because of its relatively higher field effect mobility of around 100cm2/Vs. Recent progress of LTPS technologies and advanced technologies, which are generally called "System on Glass (SOG)," will be discussed. The technology includes circuit integration, photo-sensor integration for input functions, and display quality and performance improvement.

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

Success in moving ink jets into newer areas such as printing on to-be-defined flexible substrates or developing new functional fluids requires both process and fluid research and engineering. Today, leading-edge concepts are slow to be explored because of the expense and complexity of commercially available ink jet deposition systems, time and resources required to specify and acquire commercial ink jet systems and the expertise required to operate commercial ink jet systems.

Drop placement accuracy and precision are the critical performance values of industrial ink jet deposition systems. Imperfect components and environments have severe impacts on drop placement. Litrex has identified over 120 error sources and developed engineering solutions to address the errors. In this paper, improved results using thermal compensation and stage mapping techniques are demonstrated. A recent progress in inkjet fabrication of multi-color electrophoretic display on flexible substrate with large distortion is also demonstrated.

Plextronics develops conductive polymer technology (trademarked $Plexcore^{TM}$) that will enable the broad market commercialization of printed electronic devices. This talk will emphasize advances to our $Plexcore^{TM}$ HIL technology - a soluble non-acidic hole injection layer (HIL) technology for OLEDs . which is designed to dramatically improve device efficiency and lifetime of flat panel displays and solid state white-lighting.

As the manufacturing capacity needs for large size LCD TV shifts very fast into next generation, processing and test equipment makers face more difficult challenges in accommodating productivity, reliability and lead time of panel makers as well as the prerequisite of high process quality. In this paper, AKT will discuss its new innovative productivity solutions in PECVD (Plasma Enhanced Chemical Vapor Deposition), as the key thin film process system, and EBT (Electron Beam Test), as the key array test system, for the huge glass size with surface dimension larger than 2 meter by 2 meter.

We report on Organic Vapor Phase Deposition $(OVPD^{(R)})$ an innovative deposition technology for organic light emitting device (OLED) and organic semiconductor manufacturing. The combination of $OVPD^{(R)}$ with Close Coupled Showerhead (CCS) technology results in manufacturing equipment with vast potential for cost effective manufacturing of OLED displays commercially competitive to LCD. The actual $OVPD^{(R)}$ equipment concept and design is discussed: Computational Fluid Dynamic (CFD) modeling is compared with experimental results proving the excellent controllability of the deposition process. Further other production relevant deposition properties are being reviewed e.g. high deposition rates and high organic material utilization efficiency of the $OVPD^{(R)}$ - Technology. Data from devices made by $OVPD^{(R)}$ show comparable/ superior performance to those fabricated with conventional vacuum thermal evaporation (VTE) techniques. An outlook on further potentials of $OVPD^{(R)}$ with respect to enabling advanced organic device structures is given.

The Gaussian thickness profiles in metal plate evaporation using LPS sources have been studied for the first time. Based on our experimental data, it simulates the organic thin-film uniformity of 3% and very high material usage of 81% for large size AMOLED manufacturing.

DuPont Displays has developed a new solution printing fabrication process for OLED displays, using small molecule OLED materials. The new manufacturing process is more cost-effective and scalable than evaporation of materials through physical masks, and addresses issues associated with ink jet printing. A new material (DB) has been developed for use as a hole-injection layer in OLEDs.

Dopant and host molecules for charge transport layer in OLED have been developed. They enable implementation of the PIN OLED technology in mass production. We review the status of PIN OLED with main focus on top-emission structures and operation stability at elevated temperatures. A green phosphorescent top-emission device with 2.5 V operating voltage and 90 lm/W at 1000 $cd/m^2$ is presented. For a red top-emission device, lifetime exceeding 100,000 h at 500 $cd/m^2$ initial brightness is reported. Operational stability at $80^{\circ}C$ has been investigated. A lifetime of 17,000 h at 500 $cd/m^2$ has been achieved. Finally, we comment on further reduction of the operating voltage in OLED.

A Novel pixel structure with a new threshold voltage compensation technique is proposed for large-size a-Si:H AMOLED panel application. The proposed pixel improves image quality with threshold voltage compensation and alleviates annealing technique for display-off time. Sensing the threshold voltage of driving TFT for 20-inch WUXGA panel is verified by the HSPICE simulation.

Here we describe a novel driving scheme in the form of negative AC bias stress (NAC) to compensate shift in the threshold voltage for hydrogenated amorphous silicon (${\alpha}$-Si:H) thin film transistor (TFT) for AMOLED applications. This scheme preserves the threshold voltage shift of ${\alpha}$-Si:H TFT for infinitely long duration of time(>30,000 hours) and thereby overall performance, without using any additional TFTs for compensation. We briefly describe about the possible driving schemes in order to implement for real time AMOLED applications. We attribute most of the results based on concept of plugging holes and electrons across the interface of the gate insulator in a controlled manner.

Nanocrystalline silicon (nc-Si) based TFTs were developed using a conventional PECVD production system. Devices exhibit very interesting characteristics, in particular when using a bi-layer structure which reduces leakage current and improves subthreshold area. Good stability and low leakage current make these devices suitable for the fabrication of low-cost and high performance AMOLED displays.

Anchoring energy of liquid crystals on solid substrates is a key parameter in liquid crystal technology. A nonperturbative method of its measurement by dynamic light scattering on thermal orientational fluctuations is presented, The ratio of the zenithal and azimuthal anchoring coefficients is shown to be equal to the ratio of the orientational elastic constants.

Evaluating method of the device parameters of liquid crystal display (LCD) by means of the renormalized transmission spectroscopic ellipsometry is demonstrated. Dielectric and elastic constant, threshold voltage, pretilt angle, cell gap and Anchoring strength coefficients can be evaluated from the measurement of ellipsometric parameters measured by the symmetrically oblique incidence transmission ellipsometry (SOITE). Furthermore, rapid evaluating method for rubbed polyimide film is also demonstrated.

We proposed a soft-lithographic method for aligning a liquid crystal (LC) in patterned azimuthal orientations. It is demonstrated that a thermoplastic polystyrene layer is patterned from a thermally stable polyimide layer via pressure-assisted capillary force lithography, which provides multidirectional LC alignment condition simply followed by a unidirectional rubbing process.

Flat fluorescent lamp(FFL) is used as a light source for LCD TV backlight and is composed of many discharge channels but each channel may not be turned on simultatneouly especially at cold temperature. The simultaneous start of each lamp channels of FFL was accomplished by driving FFL with specially designed voltage and currnet waveforms without sacrificing the inverter efficency.

We proposed a new Mercury-free Flat Fluorescent Lamp (MFFL) for LCD backlight which shows a wide, stable operating voltage margin, high luminance and efficiency. In this paper, we expanded the single cell with 4 inch diagonal size into the multi-cell for the large size LCD-TV backlight application, examined its operating characteristics and proposed a driving scheme for 2-bit areal selective dimming control.

Nanosilver has intrinsic problem to adhesion on the surface of silica. To improve interfacial properties between nanosilver and silica substrate, a thin titanium film is introduced in this study. The titaniumcoated silica substrates are prepared by sputter technique. The commercial silver nanopaste with size around 3-7nm is used in this study. The results indicate thin layer of titanium can improve the bonding properties of nanosilver and expect to be used in fabrication of TFT display panel.

Recent advances in the microstructural modification of metal films using excimer laser projection irradiation and lateral resolidification are discussed. Pure copper films have been directionally resolidified into large sheet-like grains when properly encapsulated for suppression of liquid-phase dewetting. A survey and quantitative assessment of the defects found in these icrostructures, typical for rapidly solidified metals, is presented.

Line-scan SLS of thin Si films permits the attainment of low-defect-density Si films with a directionally solidified microstructure. This paper deals with: (1) identifying and examining the structural defects that are found in the resultant material, (2) how the spatial variations in the type and density of the observed defects may potentially affect the overall uniformity of the resulting devices, and (3) some technical options that may be applied in order to potentially alleviate the situation.

Nonoptimal placement of short-channel-length TFTs in large-grained polycrystalline Si films with a periodic microstructure, as for instance obtained via 2-shot SLS, can potentially lead to degradation in the overall uniformity of the resultant devices. In this paper, we explain and demonstrate that by simply introducing a well-defined misorientation between the devices and the periodic microstructure, it is possible to significantly reduce (and potentially entirely eliminate) the device nonuniformity problem that can arise from such a cause.

LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

Low work function alkali metals and alkaline earths successfully lower the electron injection barrier and increase electron injection into the organic layer in OLED displays, but their implementation is not easy. AlkaMax technology can ensure the required metal evaporation rate in a fast, homogeneous and easily controllable way.

A fully integrated inline OLED production system is presented. The performance of PLED devices that are encapsulated with a thin film multilayer stack are compared to conventionally encapsulated devices with glas/dessicant protection. The observed luminance decay is the same in both cases. The lifetime performance of the thin film encapsulation is measured and critical parameters are discussed. The first smOLED devices produced on the OTB equipment are presented and comparison with other smOLED devices shows very good results.

Through baking process on an interlayer, known as hole transporting layer, varying baking temperature up to 300 degree, which is considered as extremely high for polymer light emitting device (PLED) system, we found interesting relationship between packing density and morphology affecting device performance. Granular morphology shows that as temperature increases, grain size is getting smaller to pack closely and make interlayer harden. Such denser interlayer has temperature dependency of its own mobility, even without clear evidence of degradation of material itself. Its fact proven in a single film also reflects on multilayered PLED's performance like IVL, efficiency, lifetime. It's found that, especially, to enhance lifetime is related with thermal stability of interlayer and its mobility dependency to meet better charge balance. Therefore, it gives us understanding not only baking effect of interlayer, but also material & device designing guide to enhance lifetime.

The hybrid thin-film (HTF) passivation layer composed of the UV curable acrylate layer and MS-31 (MgO:SiO2=3:1wt%) layer was adopted in organic light emitting diode (OLED) to protect organic light emitting materials from penetrations of oxygen and water vapors. The moisture resistance of the deposited HTF layer was measured by the water vapor transmission rate (WVTR). The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007g/m^2$ per day at $37.8^{\circ}C$ and 100% RH. Therefore, the HTF on the OLED was found to be very effective in protect what from the penetrations of oxygen and moisture.

An artificial retina using thin-film photodiodes (TFPDs) and thin-film transistors (TFTs) is proposed. The characteristics of a TFPD and TFTs are measured, and the circuits of the retina pixel and retina array are designed. It is confirmed that the artificial retina can achieve edge enhancement and control photo-sensitivity.

For system-on-glass (SoG) with low-temperature poly-silicon (LTPS) thin film transistor (TFT), a new system interface architecture and timing controller are developed. With the newly developed system interface architecture, line memory can be eliminated which would take large area of SoG display panel. The system interface and timing controller are targeted for the application for 6-bit gray scale, 60-frames/s qVGA format.

HDTV will be the future TV system. LCD TV, accompanying with the progress of HDTV, rapidly grows up these years. Beside, several technologies and fabricating techniques have greatly enhanced resulting high quality display is easy to achieve. This paper will discuss video decoder, color filter, and backlight which is to know their functions, operating methods, and the chromatic and optical characteristics.

In this paper, device performances of organic lightemitting diodes (OLEDs) will be presented for AMOLED and general illumination applications. Various types of advanced devices were developed to enhance the power efficacy and luminous efficiency. Here we also demonstrated longer lifetime AM-OLED structures, which lifetime is about 100 hours until $L/L_0$ reaches 0.99.

In this paper, we describe a versatile use of fullerene(C60) as a charge transporting material for organic light-emitting diodes. The use of fullerene as a buffer layer for an anode, a doping material for hole transport layer, and an electron transport layer was investigated. Fullerene improved the hole injection from an anode to a hole transport layer by lowering the interfacial energy barrier and enhanced the lifetime of the device as a doping material for a hole transport layer. In addition, it was also effective as an electron transporting material to get low driving voltage in the device.

In this paper, the thermally evaporated molybdenum oxide $(MoO_x)$ is investigated as the effective hole-injection material for organic lightemitting devices (OLEDs). The use of $MoO_x$ significantly lowers the operating voltage of OLEDs, insensitive to the anode materials used.

We demonstrate a new approach to form gradient hole injection layer (HIL) in organic light-emitting diodes (OLEDs). Single spincoating of hole-injecting conducting polymer compositions with a perfluorinated ionomer results in gradient workfunction through the layer by self-organization, which lead to remarkably efficient single layer polymer light-emitting diodes (PLEDs) (${\sim}21$ cd/A). The device lifetime was significantly improved (${\sim50$ times) compared with the conventional hole injection layer, poly(3,4-ethylenedioxy-thiophene)/polystyrene sulfonate. This solution processed HIL also produced dramatically enhanced luminous efficiency (${\sim}34$ cd/A) in vacuum- deposited green fluorescent OLEDs while the vacuum deposited HIL gave the luminous efficiency of ${\sim}23$ cd/A in the same device structure.

A microlens arrays formed by thermal reflow method is attached to an OLED device and the light extraction efficiency which includes luminance and power information is determined by adjusting the area ratio and the height ratio.