Laser-irradiation-induced crystallization of as-deposited amorphous precursor films constitutes an integral step in fabricating LTPS TFTs. Consideration of various factors leads one to conclude that, for display manufacturers, choosing how to crystallize the films can be identified as being tactically and strategically significant. This paper will begin by reviewing the fundamental aspects of laser crystallization, and then present noteworthy advances and progress, which have recently been accomplished in the field. In particular, we will focus on communicating the evolving status associated with the sequential lateral solidification (SLS) method, which can be presently identified as the most strategically enabling crystallization method.

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

Excimer-laser-based crystallization is ideallysuited for forming crystalline Si films on glass substrates for use in active-matrix displays. In this paper, we will report on recent and significant technical advances in light sources and beam delivery systems targeted at enabling ultra-uniform mura-free low-temperature polycrystalline silicon active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analyzed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

This article discusses physical processes affecting the speed of addressing discharge, and ways to both significantly increase the speed, and lower the cost of addressing.

We analyzed the effect of cell resolution on the luminous efficacy through three-dimensional numerical simulation to understand the inherent discharge mechanism change in the plasma display panel. As the resolution increases from VGA to Full HD, the luminous efficacy decreases. With higher Xe content, VUV generation efficacy of Full HD becomes much lower than those of VGA or XGA cells, due to the increased plasma loss and lower electron heating. However a long electrode gap $140{\mu}m$ in Full HD cell with Ne-Xe [20%] results in the high luminous efficacy comparable to that of the XGA cell with $60{\mu}m$ gap. When comparing the effects of Xe content variation on the luminous efficacy of two different subpixel types, i. e., SDE (Segmented electrode in Delta color arrayed, Enclosed subpixel) [1] and conventional stripe barrier type in the XGA and Full HD cells, the luminous efficacy of SDE structure shows higher improvement in Full HD resolution compared with that of conventional type XGA cell, whose cause is identified as the reduced plasma loss.

We performed a discharge analysis on ac plasma display panel through the numerical simulation of the EF (Energy Fluid) model using the electron's energy equation. When it is compared to the results of commonly used LFA (Local Field Approximation) model, there is a clear difference in the spatiotemporal distribution of Xe excited species. In particular, the experimentally observed striation phenomena in the anode region could be observed in EF model and the occurrence of the striation was attributed to the ionization and excitation instability due to the streaming electrons in the anode region plasma.

Since the scalability of OLED process is crucial factor for large-sized TV manufacturing, various technologies are reviewed based on the published information. Despite of recent technology advancement enabling high color purity, large-sized AMOLED, a lot of problems to solve still exist to enter the large-sized display market. Here, Samsung will discuss what has to be concerned for large panel and how far the OLED technologies need to go more for the large-sized AMOLED TV marketplace.

Though bottom emission AM-OLED has advantages in respect of mass production, the bottom emission type is underrated due to its low aperture ratio and low color gamut, compared with top emission type. In this paper, we demonstrate that the color gamut up to 89 % can be simply achieved by depositing dielectric multilayers, whose thicknesses are determined using an optical simulation program, prior to formation of Si layer.

The maximum current level in organic light emitting diodes (OLED) panel influences the maximum pixel luminance, the width of $V_{DD}$ lines, the maximum power consumption and the lifetime. We propose an algorithm that limits the overall current without any palpable image artifacts, and therefore, improve panel parameters by program.

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

We present simulations and results to demonstrate the viability of stainless steel foil as a substrate for low power consumption, flexible AMOLED displays. Using organic planarization layers, we achieve very smooth surface properties, resulting in excellent TFT performance, that can be repetitively flexed without significantly affecting device performance. The use of phosphorescent OLEDs enables the design of low power consumption 40" AMOLED displays.

Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

We have investigated printing techniques for processing organic light-emitting diodes (OLEDs). We succeeded to gravure print uniform organic thin films as well as screen print low work function cathode for OLED structure. Furthermore, by using roll-to-roll manufacturing methods, we have been able to fabricate all-printed flexible OLED demonstrator.

Micro-cell LC film and polymer network liquid crystal (PNLC) film by using continuous compatible process have been developed . A high-contrast micro-cell LC film has a strong potential as a high-performance flexible device. PNLC film has the low driving voltage. Both films show the characteristics of lightness, thinness and mechanical stability.

Optical compensation films are widely used to enlarge viewing angle characteristics for LCDs. A new surface film with an inner light scattering layer was newly developed to improve gray scale inversion. This paper describes technologies regarding these films that enhance the viewing angle characteristics for LCDs.

We have developed a series of fluorinated dimethacrylate copolymers. Our work has covered the synthesized derivatives of alignment materials, characterized the pretilt angle and uniformity of liquid crystal alignment layer. The pretilt angle can be tailored by using the fluorinated copolymer. Excellent uniformity was achieved as shown in experimental results.

As the manufacturing capacity needs for large size LCD TV shifts very fast into next generation, equipment manufactures face more challenges in development of the systems which can accommodate productivity, reliability and high process quality requirements from the panel makers. AKT committed to continue its contribution to the growth of the LCD market by providing excellent PECVD products. The cost containment and performance improvement are key challenges for large size processing equipment development and this presentation discusses various challenges and AKT's solutions in developing large size PECVD equipment beyond Gen. 8.

VIATRON TECHNOLOGIES has developed an $\underline{A}$tmospheric $\underline{M}$etal $\underline{D}$oping (AMD) system which uniformly dopes metal species onto a substrate. The AMD system injects metal-organic vapor over substrate using an injection head with a scan motion. One of important application of this system is a metalinduced crystallization of amorphous Si for manufacturing AMOLED poly-Si panels. The AMD system with a use of Ni vapor source produces doping of trace amount of Ni onto amorphous Si, enabling uniform MIC crystallization. Also, the operation without vacuum condition offers advantages such as easy maintenance, low cost production, and large glass processes.

We introduce the inline type mass production tool for the large size lighting OLEDs and flexible OLEDs. The manufacturing tool includes the linear belt source what is new concept for the organic deposition processes and the deposition operation combines directly to the encapsulation operation in a tool. The linear belt source evaporation in deposition processes is performed during the substrate transferring to innovatively improve the productivity in manufacturing.

Large area flicker is one of the most annoying image defects, and it is an inherent characteristic of impulsively driven displays such as CRTs. Recently, LCDs have also adopted impulsive driving methods for improved motion picture quality, therefore LCDs can also show large area flicker. Existing metrics do not account for the non-linearity of human brightness perception. This paper presents an improved large area flicker metric to more accurately quantify large area display flicker performance.

We propose a novel optical configuration for transmissive and reflective mode in the IPS LC cell to improve the viewing angle characteristics in a diagonal direction. The optical design was performed on a Poincar$\dot{e}$ sphere. From the calculation, we confirmed that the proposed configuration provides excellent viewing angle characteristics.

Chiral liquid crystals exhibit band-gap structures responsive to electrical and optical fields, providing wide-ranging opportunities for photonics applications. We discuss three aspects of this technology: optics of chiral nematic devices and removal of pitch jumps; optical switching of chiral nematic materials; and using novel phases in photonic devices.

A new concept of the microlens array is fabricated using a birefringent layer on the concave microlens array. The stacked layers of liquid crystalline polymer (LCP) and the UV epoxy focus an incident light due to the surface relief structure. The ferroelectric liquid crystal layer was added to control the focusing intensity with a fast switching time.

Luminous efficacy of 6.0 lm/W has been realized by introducing a spatial positive column discharge together with delayed D pulses, shared sustain pulse voltage, and low sustain frequency drive. Also a high speed addressing of $0.25{\mu}s$ was achieved. The luminance was $157cd/m^2$, which is high enough for a 260-in. FHD display.

Dual auxiliary pulses are adopted in an AC PDP with an auxiliary electrode. The secondary auxiliary pulse of dual auxiliary pulses efficiently utilizes priming particles and contributes to improved luminous efficacy. A shorter time interval between the two auxiliary pulses resulted in better efficacy. The maximum luminous efficacy was approximately 12 lm/W according to measurement of the discharge in a Ne+20%Xe gas-mixture and green cells.

In this study, a high luminous efficacy AC-PDP panel with long discharge gap and grooved dielectric layer has been studied. By applying this high efficacy concept and optimized driving waveform featuring negative biased sustain, ${\sim}2.6lm/W$ of luminous efficacy was achieved in 42- inch HD panel. Modified fabricating process and new discharge cell structure were investigated to obtain improved uniformity and operating characteristics.

A new front plate structure of ac-PDP was explored using fence-type aluminum electrode coated with anodic aluminum oxide.[1] In this structure, ITO and glass dielectric layer were eliminated and expensive Ag BUS electrode was replaced with aluminum. Test panels were prepared using the new structure and their luminance and discharge characteristics were examined. These results indicate that the new structure provide a new way of cost reduction and enhancement of performance of ac-PDPs

IGZO TFTs were fabricated by conventional photolithography and wet-etching processes on metal substrates for the flexible display. The characteristics of TFTs on metal substrates were comparable to those of TFTs on glass substrates. Moreover, AM-OLED panels based on IGZO TFT arrays on metal substrates were successfully driven, for the first time.

We prepared ambipolar organic field-effect transistors and observed blue emission when both hole and electron accumulation layers were in the channel. We found that the reduction of carrier traps and controlling devices' preparation and measurement conditions were crucial for ambipolar operation.

We demonstrated 4 inch QVGA AMOLED display driven by GaInZnO TFT. The structure of GaInZnO TFT is back channel etch (BCE) which is conventional structure for a-Si TFT. The electron mobility of GaInZnO TFT is $2.6\;cm^2/Vs$ and Vt is 3.8V. It is thought that GaInZnO TFT could be backplane for AMOLED TV.

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

We demonstrate a novel selective patterning process of a semiconducting polymer for channel regions to fabricate an array of organic thin-film transistors (OTFTs). This process is applicable for various organic films over large area. A reflective liquid crystal display based on the OTFT array was produced using the selective patterning through a wettability control.

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

We fabricated flexible OTFT-backplanes for the electrophoretic display(EPD). The OTFTs employed bottom contact structure on PEN substrate and used the cross-linked polyvinylphenol for gate insulator, pentacene for active layer. Especially, we used PVA/Acryl double layers for passivation of backplane as well as for pixel dielectric layer between backplane and EPD panel. The OTFT-EPD panel worked successfully anddemonstrated to display some patterns.

The performance of polymer light emitting diode can be improved significantly by interfacial engineering on anode and/or cathode through adjusting the charge injection barriers for holes and electrons. Studies involve CFx and SAM modifications on ITO, thickness and delay time to baking of PEDOT:PSS, and electron injection/hole blocking layer.

Organic transistors are promising in the future development of active devices for flexible, low-cost and large-area photoelectric devices. However, conventional organic field-effect transistors have lowspeed, low-power, and relatively high operational voltage. Vertical type transistors show high-speed and high-current characteristics and are suitable for driver elements of flexible displays.

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

A series of new oligomers were synthesized by Grignard reaction, the Suzuki coupling reaction, etc. The oligomers showed excellent TFT performance with mobilities higher than $0.5\;cm^2V^{-1}S^{-1}$ and on/off ratios higher than 5 $x10^5$. Their electronic and optical properties were investigated using many analysis methods, such as X-ray diffraction (XRD), UV-vis and photoluminescence spectroscopies.

We report on our material and process research on ZnO:Al films and on our investigations on wet chemical etching using a variety of etching solutions. We achieve resistivity as low as $750{\mu}{\Omega}cm$ for ZnO:Al films with film thickness of 140 nm. Etching with phosphorous acid allows for accurate fine patterning of the ZnO:Al films on glass substrates.

The organic deposition chamber has been developed using belt source evaporation techniques for the first time. The deposition chamber is consisted of the belt source, organic vapor source, and the mask alignment assembly. The rollers operate for the thin metal belt to continuously move with the automatic tension control. It has been proved for the belt source evaporation easy to operate and the alignment of the substrate/shadow mask becomes so simple to use in AMOLED manufacturing industry.

A neutral beam system has been developed to produce hyperthermal neutral beams composed of indium, tin, and oxygen atoms. Using these hyper thermal neutral beams with energies in the range of tens of eV, high quality indium-tin oxide (ITO) thin films have been obtained on glass substrates at room temperature. The optical transmittance of the films is higher than 85% at a wavelength of 550 nm and the electrical resistivity is lower than $1{\times}10^{-3}{\Omega}cm$.

In this paper we present work done by Kodak Graphic-Communications-Group and our partners demonstrating applications where laser direct imaging could replace photolithography in display manufacturing. Such applications range from direct manufacturing (e.g. LCD color-filters) to producing “masters” where manufacturing is done by traditional printing methods (e.g. flexography, Gravure-printing).

Four banana-shaped compounds have beene synthesized introducing ester linking group into mesogenic unit, varying the central core with 1,6-, 1,7-, 2,3-, and 2,7-naphthylene units, and introducing the dodecyloxy group as the terminal flexible unit. All obtained compounds except one with 1,7-naphthylene unit were reversibly thermotropically liquid crystalline. The compound with 1,7-naphthylene unit could not form the mesophase due to its asymmetrical and sharp substitution angle. The compounds with 1,6- and 2,3-naphthylene units showed an antiferroelectric switchable smectic phase, which has been designated B2 phase. Interestingly, the compound with the 2,3-naphthylene unit showed the two mesophases of B2 and nematic phase.

Improvement of LC mixtures can be realized by the development of new molecules in combination with the identification of advanced mixture concepts. By new high-polar single materials rotational viscosity has recently been improved significantly. Now, a new LC mixture concept for IPS and FFS technology has been identified which additionally improves switching time by up to 10%. This advanced concept is based on a more efficient usage of high-polar materials and Super Low Viscous (SLV) compounds and simultaneous reduction of less efficient materials.

The FLEXMatters initiative is building a collaboration of companies and universities to develop and produce flexible devices. Kent Displays leads the production of flexible displays using their bistable cholesteric technology. The FLEXMatters members are collaborating to develop the flexible manufacturing process that will are common to a wide variety of devices.

We fabricated an optically compensated bend cell with pixel-isolating polymer wall. The polymer wall was formed by phase separation of LCs and UVcurable polymer. The fabricated cell had initially ${\pi}-twist$ state. It showed low driving voltage, wide viewing angle and fast response properties. Also, polymer wall provided the mechanical stability preventing distortion of a display image from pressure.

To clarify processes responsible for improved characteristics of protective layers (e.g. SrCaO) the ion-induced electron emission and photoemission from these layers were analyzed. Additionally, a study of ternary Mg-, Ca-, Ba-based compounds as candidate materials for a protective layer of Plasma Display Panels has been performed as well.

Effects of aging treatment of doped-MgO electron emission layer on luminance efficiency of ac-PDP were investigated in this study. Morphological and luminance efficiency with aging treatment were examined, especially with emphasis on the effects of doping elements. The results indicate that the luminance efficiency of test panels depends on the type of doping elements used for MgO and that may be due to the redeposition of MgO during glow discharge.

The key role of MgO is well recognized in PDP's technology. During manufacturing, significant contamination of the oxide occurs. Getters can compete against the impurities sorption speed of the oxide layer. The analysis of the impact of a suitable getter configuration on the operational parameters of PDP's is the final goal of this study.

The reconstruction characteristics of MgO (111) textured protective layer by over-frequency accelerated discharge in AC-PDP were investigated and correlated to the variations of electronic structures. The reconstruction process and exaggerated grain growth (EGG) were explained by defect-assisted 2-D nucleation and growth mechanism combined with charged cluster model.

Advances in white OLED tandem architecture are discussed.With these structures, stable and low-power full color AMOLED displays can be fabricated that are anticipated to be suitable for large area applications such as TVs. With a tandem architecture, efficient (24 cd/A) OLED structures with exceptional stability (${\sim}100,000\;h$ at $1000\;cd/m^2$) are described. In addition, excellent color gamut (>100% NTSC) can be attained by incorporating advanced color filters into the AMOLED backplane in a typical bottom-emitting configuration.

eMagin's unique OLED-on-silicon microdisplay technology is unique and is based on small molecule white OLED with color filters using a top emitter structure. This paper will present results of recent improvements in the technology including improved lifetimes and uniformity and will feature an SVGA resolution full color microdisplay that is 0.44 inches diagonal.

Highly efficient and stable white PIN OLED structures have been developed with a focus on possible AM display applications. Due to the use of the novel air-stable Novaled n-dopant material NDN26, the mass production compatibility of the PIN approach is improved. With both a conventional n-dopant, NDN1, and a novel air-stable n-dopant, NDN26, similar performance in efficiency and lifetime are reached. Based on highly a stable red fluorescent emitter system, the Novaled PIN approach allows for reaching ultra-long lifetimes of 1,000,000 hours at a brightness of $1,000\;cd/m^2$, both for top and for bottom emission layouts. Furthermore, inverted PIN structures for a possible use in a-Si backplane applications for AM displays are shown. With a phosphorescent green emitter system it could be demonstrated that for bottom and inverted as well as non-inverted top emission, a brightness of $1,000\;cd/m^2$ can be reached at below 3 V. In addition to low operating voltages and long lifetimes, PIN OLEDs also enable for device structures with extremely low operating voltage drifts, a feature of increasing importance for future AM display developments.

We report a novel optical structure for bottomemitting white OLEDs. The structure includes, reformulated color filter, dielectric mirror to enforce cavity resonance, and micro-scatterer to extract more light and diffuse the viewing angle dependency. With the new structure, the color gamut was 104% of that of NTSC, the combined transmission efficiency of the color filter was 83%/3 and the color shift at $45^{\circ}$ was maintained below 0.02 in the 1976 CIE color space. The color performance of White OLED + color filter system can match comparably that of RGB OLED + microcavity system.

Principal challenges to $\underline{direct\;fabrication}$ of high performance a-Si:H transistor arrays on flexible substrates include automated handling through bonding-debonding processes, substrate-compatible low temperature fabrication processes, management of dimensional instability of plastic substrates, and planarization and management of CTE mismatch for stainless steel foils. Viable solutions to address these challenges are described.

A A4 size black and white reflective plastic display was developed for out door application. For document readability, high resolution of 180ppi plastic TFT backplane and high reflectance electrophoretic front panel sheet was used. Preparation of display was held near $100^{\circ}C$ process on PEN substrate.

Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si-wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Si-wafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed.

Organic thin-film transistors (OTFTs) using organic semiconductors as an active layer are of interest for their use in low-cost, lightweight and flexible electronic products. Although the field-effect mobility of OTFTs is still lower than those of inorganic thin-film transistor, the advantages of easy manufacturing and processing make them suitable for selected applications. In this paper, we report the syntheses and characterization of new p-type OTFT materials.

Displacement current $(I_{dis})$ and drain-to-source current $(I_{DS})$ are evaluated using the simultaneous measurements of source $(I_S)$ and drain $(I_D)$ currents during the application of a constant drain voltage and a triangular-wave gate voltage $(V_{GS})$ to top-contact pentacene thin-film transistors.

A natural graphite heat spreader increased the upper operating temperature limit of a CCFL backlit LCD television. A 0-80W heat source was used to simulate additional electronics. Without the heat spreader, internal circuitry shut-down at ${\sim}30;$ no shut-down occurred above 80W with a heat spreader. Additionally, brightness, temperature uniformity, and operating ranges were improved, verified by environmental chamber performance testing at various ambient conditions.

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

This paper will discuss the latest results from an advanced array test system, using newly developed sensor technology. A comparison of detection results between old and new generation products will be shown along with a discussion of the advantages of the new, higher signal to noise ratio detector.

We have developed an automated circuit defect inspection and repair method that can be used to improve the yield ratio of TFT-LCD. The method focuses on correcting resist patterns after the development process to ensure shape regularity. We built a prototype system and confirmed that the method is valid.

A twisted nematic type liquid crystal electro-optic modulator (TN-LC modulator) was developed. The modulator used single polarizer and the reflection on-off ratio was maximized by optimization of twist angle and retardation of liquid crystal cell. The TNLC modulator shows better sensitivity and response time than conventional liquid crystal modulator.

Gamma curve is one of the most important optical performance characteristics of a liquid crystal display. we present investigations on the relationship between gamma and polarizer. The gamma curve is affected by the angle of the polarizer absorption axis. When the crossed angle between the two polarizers turns larger, gamma values will decrease. The gamma variation caused from each polarizer variation could be improved by monitoring and controlling the axial direction of the polarizers.

We propose a soft-lithographic patterning method for producing a multi-domain liquid crystal (LC) alignment. The LC alignment polyimide layers are periodically patterned in the pixel boundaries by a micromolding-in-capillaries method. In our structure, the initially homeotropic LC orientations in the pixel areas are changed to axially symmetric LC domains due to the symmetric pretilt of LC molecules on the pixel boundaries.

Recent studies in the literature have shown that it is possible to overcome the limitations of the physical properties of liquid crystals by the doping of carbon nanotubes. Although still in its infancy, the potential of such a new approach for opportunities in display applications should not go unnoticed.

We describe effects of ionic and neutral additives on phase and structural behavior of the lyotropic chromonic liquid crystals used in preparation of optical elements such as polarizers and compensators.

3M has developed a Precision Replication Process for the production of PDP Barrier Ribs and other display devices. This process, is fast, clean and capable of producing very high resolution (FHD and beyond), high aperture ratio and fine cell structures. Recent advances in materials and process features will be discussed.

In this paper, high precision molding process was developed using a soft mold to fabricate fine closed-types of the barrier ribs for PDP. A green sheet was employed to fabricate the barrier ribs in this process. The soft mold with good demolding characteristics was replicated from a master mold. An optimal forming load which would not fracture the soft mold was also determined. The barrier ribs of rectangular type with upper width of $30\;{\mu}m$ would be fabricated by this process.

The vacuum sealing method is adopted to minimize the residual impurity gas by enhancing a base vacuum level, and the resultant changes in the reset, address, and sustain discharge characteristics, such as a firing voltage, IR emission, and ICCD image, were examined in comparison with the conventional sealing method in the 42-in. AC-PDP. In the PDP cells fabricated by the vacuum sealing method, the ICCD observation illustrates that the discharge is initiated and extinguished very fast and its IR emission intensity is high.

The AMOLED industry must compete with AMLCD displays by standardizing around scaleable technology platforms that deliver display-performance and manufacturing-cost goals. Kodak White OLED device rchitectures have the potential to achieve the best performance and cost tradeoffs. Here we describe the building blocks necessary for delivering effective AMOLED mass production technologies.

Electron injection improvement in OLED organic layers can be obtained by their doping or using alkaline-earth or alkali metals as electron injection layers (EIL). Common handling problems can be solved by an innovative metal dispensing technology to ensure controlled and reliable metal layers for OLED. Thickness and deposition rate of EIL during the process have been explored to optimize device performances.

The enhanced control of OLED deposition processes by Organic Vapor Phase Deposition $(OVPD^{(R)})$ is discussed. $OVPD^{(R)}$ opens a wide space of process control parameters. It allows the accurate and individual control of deposition layer properties like morphology and precise mixing of multi component layers (co-deposition) in comparison to conventional deposition manufacturing processes like e. g. VTE (vacuum thermal evaporation).

We describe the DuPont Displays full color OLED printing and materials technologies. The process is more cost-effective and scalable than thermal evaporation through shadow masks. The materials lifetime is sufficient for most portable applications and is nearing that required for stationary displays. Recently, 4.3" WQVGA displays were demonstrated.

A pure polyimide substrate and polyimide substrate with nano-silica additive have been formed on glass by coating. The a-Si:H TFT arrays have been formed on such polyimide substrate for driving TNLCD.

We have developed tight bonding of plastic LCD with new rigid spacer. For tight bonding of two plastic substrates, we designed structures to collect UV or thermal epoxy placed on the top of rigid spacer spontaneously by capillary effect. We confirmed that tight bonded plastic LCD has a good adhesion without induced defects and a high mechanical stability against the various external deformations. This method can be applicable to the fabrication of large plastic LCDs using stamping process.

Writable Cholesteric Liquid Crystal Display and the algorithm used to detect its image were developed. We could use any hard tip, ex: the tip of a forefinger, to directly write an image on the surface of Cholesteric Liquid Crystal Display (CHLCD). By measuring the capacitance of one pixel of test cell (12mm x 15mm/1x1), F-state or P-state could be detected. By measuring the capacitance of one pixel of 4.1" CHLCD (241um x 241um/ 320x320), F-state or Pstate could not be detected, due to the effect of parasitic capacitance. Therefore, high frequency measurement and the algorithm were developed to detect the image on CHLCD.

A new current control technique called Amplitude Shift Modulation (ASM) for cold cathode fluorescent lamps (CCFL) has been developed. This new technique sets and continuously controls the current of each individual CCFL in an LCD backlight lamp array.

An EEFL with the sodium free alumino-silicate glass of high K and low $tan{\delta}$, has been investigated. As compared with borosilicate and the soda-lime EEFLs, the luminous efficiency as well as the pinhole stability of new EEFLs improves remarkably without blackening of $NaHg_2$.

Through Flow Technology offers unparalleled advantages for the manufacturing of flat panel displays using inkjet technology, including: outstanding reliability, self-maintenance, selfpriming and simple set up. The Xaar 1001 GS6 is the first product incorporating this technology. The concept and test results will be presented.

Although years of trials for the fabrication of TFT LCD color filters with the piezo Drop-On-Demand (DOD) inkjet printing technology have been made, the underlying physics of jetting and wetting has not been fully understood. In this study, the key engineering issues, jetting and wetting, are investigated with mathematical models.

In this research, we present color filter which is patterned by screen printing method. Analysis of screen printing process, screen printing system, experiment for uniform printing in large area, characteristics of screen printed CF are investigated .In spite of limitation of precision, screen printed color filter is very cost- effective in respect of manufacturing facility and ink usage.

Advanced-MVA(A-MVA) for LCD-TV application was proposed to yield high performance LCD-TV. By utilizing Additional Refresh Technology(ART), which has 2-TFTs but with single source and gate line only. The A-MVA can yield low color washout, fast response, and optimized brightness. AMVA has become the promising solution of advanced LCDTV panels for mass-production.

A tristate liquid crystal display characterized by two distinct dark states and one bright state has been presented. These two dark states contribute to two different viewing angles. We demonstrate a single panel of vertically aligned cell whose viewing angles can be directly selected from two sets of driving voltage.

Two new cell structures for optical compensated bend were proposed. There are two groups of slit electrodes, which are driven by two different signals corresponding to the entire electrode as common electrode. The transmittance was enhanced without increasing the response time and light leakage. Compared with the traditional OCB mode, the increment of the transmittance of each kind is about 90% and 30%.

We propose a method to achieve both wide viewing angle (WVA) and narrow viewing angle (NVA) characteristics with a single liquid crystal (LC) panel and a single backlight system by using 3-terminal electrode structure. We could control the viewing angle of a single LC cell by using the horizontal or vertical alignment of LC for the dark state at the front.

A New S-PVA which is named as charge-shared super PVA (CS S-PVA) LCD mode is proposed. CS SPVA controls the voltage ratio of low pixel by sharing system between low pixel and control cap, resulting in improved off-axis image quality and transmittance increase without any side effects. Moreover, the new S-PVA LCD mode is free of image-sticking. Operating schemes and display performance of CS S-PVA are presented.

A lot of research for system-on-panel(SOP) have been done to integrate display systems including data driver, gate driver, timing controller, DC-DC converter, and smart functions such as embedded touch screen, ambient brightness sensing and luminance control, finger printing on the glass. Recently, the cost of an one-chip driver IC with various functions has decreased rapidly, and new mobile display interface technologies have been introduced. So it is necessary to examine the feasibility of SOP for practical mobile applications. In this paper, we will re-examine LTPS technologies for mobile displays in terms of various aspects and discuss the practical limitations on SOP technology and future technology trend of mobile displays.

Motion-estimation/motion-compensation (ME/MC) provides superior motion picture quality but its huge computation load results in high cost. Impulsive driving is a cost-effective solution but it suffers from large flicker and brightness loss. Motion compensated impulsive driving technology has been developed to achieve high motion picture quality in a cost-effective implementation by combining ME/MC and impulsive driving. The key idea is to apply ME/MC or impulsive driving selectively according to the motion vector distribution of the incoming image sequence. In this paper, the description of the algorithm and the experimental results are provided.

A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with lowtemperature poly-silicon (LTPS) thin film transistor (TFT). For accurate sensing even with the large variation and mismatches in the characteristics of LTPS TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns read access time with 7V supply voltage while dissipating 4.05mW and 1.75mW for write and read operation, respectively

We have succeeded in designing a PHUND (portable head up navigation display), which has a compact system with a MD panel and full color display device using RGB LED sources. The PHUND has been developed as an alternative to conventional built-in type HUD system targeting the high volume aftermarket with an affordable price.

Phosphorescent OLED technology is a core technology driver for OLED display and lighting products due to the inherent and demonstrated efficiency advantages. Here we present recent results in our continued advancements of PHOLED power efficiency and operational stability with focus on narrowing emission line-width, reducing voltage, and overall design for maximizing device lifetime.

Rapid progress has been made in the development of commercially viable Light Emitting Polymer (LEP) materials for display and lighting applications. This presentation will focus on: ${\bullet}$ Degradation studies that have led to the design of new and improved materials ${\bullet}$ Recent lifetime and efficiency results for red, green, blue, and white polymers ${\bullet}$ Challenges of formulating inks that can be used in a production environment

$V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

Novel blue materials based on anthracene derivatives were synthesized by Grignard reaction, the Suziki coupling reaction, etc. They showed excellent thermal stability and emitted bright blue light, which will been used for OLED and expected to obtain high efficiency and good color purity.

The use of plastic substrates enables new applications, such as flexible display devices, and other flexible electronic devices, using low cost, rollto-roll (R2R) fabrication technologies. One of the limitations of polymeric substrate in these applications is that oxygen and moisture rapidly diffuse through the material and subsequently degrade the electro-optical devices. GE Global Research (GEGR) has developed a plastic substrate technology comprised of a superior high-heat polycarbonate (LEXAN(R)) substrate film and a unique transparent coating package that provides the ultrahigh barrier (UHB) to moisture and oxygen, chemical resistance to solvents used in device fabrications, and a high performance transparent conductor. This article describes the coating solutions for polycarbonate (LEXAN(R)) films and its compatibility with OLED device fabrication processes.

DuPont Teijin $Films^{TM}$ (DTF) have developed engineered substrates specifically for the flexible electronics market. $Teonex^{(R)}$ Q65, $Melinex^{(R)}$ ST506 and ST504 are biaxially oriented crystalline polyesters with the option of planarised surfaces. These films are emerging as competitive materials for the base substrate in OLED displays and active matrix backplanes. Given the demanding dimensional reproducibility requirements in the display applications, it is critical to control the several factors that can influence the film distortion in order to achieve the ultimate performance. This paper will discuss the impact of thermal stress, mechanical stress and the processing environment on dimensional reproducibility of polyester film and give examples of how this impacts on the film in device manufacture.

This paper provides an overview on the characteristics of a-SiC:H barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data.

An electric field was applied to a conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced through a solid state transformation within the range of a millisecond. Uniformly distributed grains were obtained due to enormously high heating rate.

It is a revolutionary technology of making color filters by ink-jet printing. The difficult reason of this method is that it is a merger technology of many fields. There must be perfect orientation systems, designed capacity and production equipment of automatically controlled printing head. Moreover, accurate ink with modification is also needed.

Ultrafine Indium tin oxide (ITO) nanoparticle was successfully fabricated by low temperature synthetic method (LTSM). Mean size of ITO nanoparticle is 5 nm, and uniformly dispersed with (222) orientated cubic structure. Using the nanoparticle, ITO thin film with good optical and electrical properties was fabricated by inkjet printing.

We have demonstrated that the light extraction efficiency of GaN based light emitting diodes (LEDs) can be significantly enhanced by using photonic crystal and microcavity (PCMC) effects. It was found that the extraction efficiency of the PCMC-LEDs is 9.5 times larger than that of the normal LEDs.

A solution for carbon nanotube based field emission displays has been designed and built. The solution makes use of structure layout to control electron beam trajectories, uniformity by use of ballasting, emission anomalies eliminated by selective carbon nanotube growth and invisible spacers to maintain the vacuum gap.

For high performance driving carbon nanotube backlight units, their phosphor must be well studied. This paper experimentally evaluates their activating speed and persisting duration properties. They are proven to be the most efficiency related factors. High performance driving schemes are derived from them and implemented in this paper.

The active-matrix field emission display (AMFED) was fabricated by integrating carbon nanotube emitters on a-Si thin-film transistors. Also, the tapered macro-gate was adopted for high immunity to a high anode voltage and strong electron beam focusing. The fabricated AMFED was successfully driven with a low voltage of below 15 V.

Carbon nanotube (CNT) cathodes having a trench structure similar to the structure of the gated triodetype cathode were successfully fabricated by a screenprinting method with multi-walled carbon nanotubes. We observed that a liquid method not only readily removes the organic residues on the CNT films, but also satisfactorily protrudes the CNTs out of the electrode surface. The CNT cathodes prepared by the liquid method showed a turned-on field of $1.4\;V/{\mu}m$. The emission current density of them was about $3.1\;mA/cm^2$ at the electric field of $3\; V/{\mu}m$. The liquid method appears to be a promising surface treatment of CNT cathode for gated triode-type FEDs applications.

Cinnamate groups are well-known for a dimerization reaction upon exposure to ultraviolet irradiation and a thermal reaction after being heated. In this study, to verify the thermal reaction of the cinnamate group in detail, we investigated the thermal crosslinking of cinnamate oligomers. The thermal reaction of cinnamate oligomers of low molecular weight is induced more readily by thermal energy compared with that of cinnamate polymers. The orientation of the liquid crystal depended on the length of the spacers in the cinnamate oligomers.

This paper reports our observation that the addition of nanoparticles in the negative dielectric anisotropic liquid crystal (LC) cell can exhibit the properties of vertical alignment without using alignment layers. The electro-optical properties of this nanoparticles-induced vertical alignment in the LC cell are very similar to the conventional homeotropic LC cell with alignment layers. This technique can be used to fabricate a flexible LC display demanding low temperature process

We propose a vertical-alignment liquid crystal display with patterned electrodes using a positive dielectric anisotropic liquid crystal. In this structure, the threshold and on-state voltages are reduced compared with previous vertical-alignment configuration with positive liquid crystal.

In this paper we propose a novel electrode structure for high transmittance in the Patterned Vertical Alignment (PVA) LC cell. Normally, the transmittance of PVA LC cell is depended on the shape of the electrode and cell gap. We studied the area decreasing the transmittance through the electrode structure for wide viewing angle and proposed new electrode design to change LC director configuration in the area. We use the 'TechWiz LCD' for calculation of the director configuration and optical characteristics. We show the comparison of the calculated optical transmittance between the conventional PVA mode and the proposed PVA mode. From the results, we confirm that the optical transmittance of the proposed structure of the PVA cell becomes higher.

We studied the nematic liquid crystal (NLC) alignment capability with a new alignment method utilizing an inkjet printed polyimide (PI) layer. A good, uniform LC alignment was achieved by the good PI printing using a new alignment method. The pretilt angle generated on the printed PI layer using the alignment method was almost the same as that on printed PI layer using rubbing alignment method. In addition, the good electro-optical performances of the new aligned twisted nematic (TN) cell with printed PI surface was obtained

In this paper, we report our successful implementation of Q tensor model in threedimensional finite element method (FEM) simulator. The 3D-FEM Q tensor-model-based simulation revealed that the spaly-to-bend transition occurs only at 4 V while the vector-model based FEM solver provides an erroneous transition voltage of 8 V.

We introduce a new copolymer alignment film made by bridge-building structure. It is a better film to decrease the image-sticking level in LCD displays. It is noted that the image-sticking was decreased by preventing ion mixing between inter-layers through high hardness. We have investigated the electrical characteristics such as pretilt angle, Residual DC, VHR by changing cure temperature and process delay time conditions of the new alignment film. In this paper, we have investigated the solution for the deep-rooted image defect and incidentally got a contrast ratio improvement by high anchoring force and hardness elevation through the new copolymer alignment film.

We report our study on the implementation of Q tensor approach into three-dimensional finite element method (FEM) numerical solver. The comparative simulation results demonstrated the possibility of a different director configuration in between Q tensor method and vector method. The comparative study confirmed that Q Tensor implementation is more appropriate for OCB analysis than the vector method.

In this paper, we present a novel method to minimize flicker and gray scale errors automatically across the entire panel by using a compensation of the gray levels of image. It was realized by image simulation with feedback structure. As a result of simulation, we observed flickers from the simulated image. And we compensated the gray scale levels for original image. The compensated gray scale levels correspond to flickers which are generated by difference of pixel voltage in odd and even frame. And we simulated repetitively the compensated image by our block diagram for reduction flicker. Consequently, we confirmed flickers have been decreased more than 87%. Furthermore, our method provides visualization and valid prediction for improvement of TFT-LCD panel

Polymer dispersed liquid crystal (PDLC) films consist of micro-droplets of liquid crystals dispersed in a polymer matrix. To make wide area PDLC filled devices, it is necessary to develop reliable method of vacuum injection of PDLC solution instead of the capillary injection. However, well-known 2-ethylhexylacrylate (EHA), main element of a prepolymer, exhibits the volatility problems, when the PDLC solution is placed under the low pressure. In this study, we developed the vacuum injection process to fill a wide area cell. Experimental results indicate that the $V_{90}$(turn-on voltage) of the PDLC cell made by a vacuum injection method are lower than that of the PDLC cell made by a capillary injection method.

Film compensation to suppress a light leakage in the dark state of fringe-field switching (FFS) at off normal direction was performed by optimizing retardation value of discotic (negative A) and TAC films including in-plane switching (IPS). The normal FFS mode shows wide viewing angle characteristics that region of CR 10:1 is over $70^{\circ}$ of polar angle in all directions. The optimized FFS cell exhibits much better performances than other methods do in terms of CR and color uniformity.

A new method is developed for the measurement of twist angles of LC molecules in an LC panel with angular resolution of 0.01degree, which allows measurement of LC panels with small twist angles. The method is based on the analysis of the change in polarization state of a light beam as it passes through the LC panel in test is rotated in-plane. Compared to other traditional method, including the analysis of transmittance change, our method is more sensitive and more precise. This method allows accurate determination of anchoring energy and close analysis of the rubbing process in the fabrication of IPS mode LC panels.

To promote liquid crystal application of nanoimprint lithography, a polymer with new concept is proposed. The material consists of a polyamic acid for good LC alignment and an epoxy resin for good imprinting. The result of sum-frequency generation (SFG) vibrational spectroscopy proves that this material is a functionally gradient material. This material shows excellent capability as a nanoimprinting material as well as an LC alignment layer.

In this paper, with a bistable curve of the bistable chiral splay nematic liquid crystal (BCSN LC) device, we clarify how the twist-to-splay transition is achieved under a horizontal field. By a sufficiently high horizontal electric field, the bistable property becomes monostable. The transition can be achieved.

New liquid crystalline Y-shaped molecules containing 1,3,4-oxadizoles have been synthesized with variation of terminal groups (R = H, $OCH_3$ or $OC_8H_{17}$). The structures of obtained compounds were identified by FT/IR and NMR spectrometry, and their thermal and liquid crystalline properties were investigated by DSC and polarizing optical microscope.

This Viewing angle control of fringe-field switching (FFS)-LCD using only one panel has been investigated. Viewing angle switching cell is composed of main- and sub-pixel, in which the former has a role of image expression and the latter has a role of viewing angle switching.

Patterned vertical alignment (PVA) mode requires multi-domain to exhibit wide viewing angle whereas the transmittance is sacrificed. To overcome the demerit, a fine pattern was formed at folded region in PVA Z-shape electrode structure. In the present work fine patterns were formed near domain boundary regions where the unwanted field direction which causes the LC to tilt down in unwanted direction exists. Thereby transmittance is improved near those fine patterns. This method is very simple and more cost-effective process than the other methods. In this article, we show the method of fine pattern formation and its influence on LC molecule in PVA mode with Z-shape electrode structure.

Six azomethine polymers containing bent-core mesogen were synthesized with variation of a bent structure of central core (1,2-dioxyphenylene or 2,3-dioxynaphthylene), and a lateral halogen substituent (X = H, F or Cl ). The properties of the polymers were characterized by FT-IR, NMR spectroscopy, DSC, polarizing optical microscopy, and X-ray diffractometry.

Effects of carbon nanotube (CNT) on the in-plain switching (IPS) and fringe-field switching (FFS) modes were investigated. The studies show that the CNT-doped LC cells exhibit lower transmittance but faster response time than those in the pure LC cell. Interestingly, the CNT-doped IPS and FFS modes show different characteristic in effects of operating voltage.

The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltagedependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC.

Synthesis of two photoactive compounds containing core imide moiety was carried out for an application to interdielectric layer in TFTLCD array. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A positive photoresist formulation was developed utilizing synthesized UV monomers, photoactive compound, binder polymer, sulfactant and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the new positive interdielectric material with high thermal stability.

Cell gap dependence on anisotropic phase separation was studied. The results showed that the morphology of phase separation depended on cell gap and material parameters. With numerical simulation and experiments, the optimal range of cell gap in the formation of polymer layer and liquid crystal was suggested for given material parameters.

It is known that the main source of the area image sticking is the ion charge adsorption on the alignment layer. We found out that the adsorption of the ion charge of the liquid crystal in the cell was physisorption, which takes place between all molecules on any surface providing the adsorption force is small.

We have measured the excited Xe atoms density in the $1s_5$ metastable states by laser absorption spectroscopy in counter discharged type AC-PDP. This experiment has shown the characteristic of the excited Xe atoms density which is relation to the visible light efficiency of PDP. The density of counter discharged AC-PDP have measured to be $9.47\;{\times}\;10^{13}\;cm{-3}$. The result has been shown to higher value than $1.45\;{\times}\;10^{13}\;cm^{-3}$ of conventional AC-PDP.

Microplasma modes generated in a display cell with an auxiliary electrode were investigated in accordance with various coplanar-gaps and plategaps. At plate-gaps shorter than the coplanar-gap, the mode transition voltage of the auxiliary pulse increased with an increase in the coplanar-gap. At longer plate-gaps, the mode transition voltage of the auxiliary pulse decreased with an increase in the coplanar-gap.

In order to improve the accuracy of simulated results, new UV source was designed. Previously the optical simulation was performed with the symmetric planar UV source. To design new UV source, UV distribution from the plasma fluid code was implanted to the 3-dimensional optical code to generate the visible light distribution. The results from planar UV source and new UV source were compared with the ICCD (Intensified CCD) image in real PDP cell and analyzed the variation of geometries and optical properties.

We studied the effect of self-erase discharge on the luminous efficacy of ac PDPs. We observed through discharge current analysis to confirm that the selferase discharge occurred mainly between sustain cathode and address electrode, which have an influence on the luminous efficacy. The amount and timing of the self-erase discharge was varied to observe its effect on the luminous efficacy. It has been found that the luminous efficacy could be improved by the self-erase discharge when it is adjusted to occur right before the main discharge in the small gap structure. In the long gap structure, on the contrary, the luminous efficacy could be increased when the self-erase discharge is suppressed. Also, various waveforms to control self-erase discharge are suggested and tested in the panel experiments.

In this paper, we propose IBS(ITO-BUS Separated) electrode structure. BUS electrode lines are placed apart from the ITO electrode lines, and they are electrically connected with vertical auxiliary electrodes. We varied the lengths of the vertical electrodes as 70, 120, 320um. The highest luminous efficiency and the largest IR emission peak were obtained for 70um length.

A possibility of manufacturing bendable ac-PDP using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-PDPs using those material system and are expected to expand the applications of plasma display panels.

The address and sustain discharge characteristics in plasma display panels (PDPs) are investigated and compared by the optical emission spectroscopy using the ICCD and Vt close-curve analysis. The observations on the xenon (Xe) emission show that the spatial and temporal evolutions in the first sustain discharge are quite different from those in the address and the other sustain discharges. The striation found in the conventional sustain discharge doesn't occur in the first sustain discharge. These different discharge behaviors are explained by employing the Vt close-curve.

In this paper, we report the wall voltage transfer characteristic between sustain electrodes according to the address bias voltage in a 3-electrodes surface discharge type ac PDP by the VT close curve measurement technique. The result shows the change of wall voltage according to the gap voltage variation depends on the address bias voltage.

The discharge characteristics of the face-to-face sustain electrode structure employing auxiliary address pulse are investigated under a sustain driving frequency of 20 kHz and various auxiliary address pulse widths (500 ns, $1{\mu}s$, $2\;{\mu}s$) in the 6-in. test panel (42-in. Full HD grade) with a pressure of 450 Torr and a 4 % Xe-content. The luminance and the luminous efficiency at the auxiliary address pulse width of 500 ns are improved more than these of $1\;{\mu}s$ and $2\;{\mu}s$. At the auxiliary address pulse width of 500 ns, the luminous efficiency shows about 0.96 lm/W at the auxiliary pulse of 90 V and the sustain voltage of 260 V.

This paper describes a new method to predict the load current of a dc-dc converter. The load current is calculated using the video information of the PDP. The output capacitance of the dc-dc converter can be reduced by utilizing the predicted load current, which results in a cost reduction of the power system in the PDP.

Characteristics of dark image retention and address discharge time lag were investigated simultaneously. It was found that reset waveforms with low black luminance did not guarantee lower image retention. Improved address discharge time lag due to modified reset waveforms similarly did not show improved image retention. The address discharge time lag and the image retention are in a trade-off relation.

The temporal dark image sticking phenomena for both the face-to-face and coplanar sustain electrode structures were compared. For both structures, the temporal dark image sticking phenomena were examined by measuring the difference in the IR emission, display luminance, perceived luminance, and temperature between the image sticking and the no image sticking cells. For the face-to-face structure, the 10-min sustain discharge causes a small increment of the panel temperature thanks to the ITO-less electrode structure, thereby resulting in mitigating the temporal dark image sticking phenomenon.

As a new fluoranthene derivative, a synthesis of benzo[k]fluoranthene was suggested, so new blue emitting materials, 7,12-diphenylbenzo[k] fluoranthene [DPBF] and 7,8,10- triphenylfluoranthene [TPF] were synthesized. $EL_{max}$ wavelength of the device using DPBF as an emitting layer was 436 and 454nm in the deepblue region, which are similar values with PL. The device that used DPBF as an emitting layer showed high efficiency of 2.11cd/A and the excellent color coordinate value of (0.161, 0.131) in deep-blue region.

We demonstrated high power efficiency and long lifetime in organic light-emitting diode (OLED) using new electron transport materials (ETMs). Electroluminescent device with these ETMs showed lower driving voltage than that with $Alq_3$. The device lifetime with a new ETM was 2 times longer than that with $Alq_3$.

We developed new green emitting materials based on the spiro moieties. The introduction of a spiro linkage into the structure of DJGH series lead to a reduction in crystallization tendency and an increase in glass transition temperature. they showed much better emitting efficiency and color purity than commercial host material $Alq_3$.

We have synthesized 4'-nitrobiphenyl-4-carboxylic acid (NBCA) and fabricated the hole-only device consisting of ITO/NBCA SAM/TPD (1500 ${\AA}$)/Al (500 ${\AA}$) and the organic light emitting diodes (OLEDs) consisting of ITO/NBCA SAM/TPD (600 ${\AA}$)/Alq3 (600 ${\AA}$)/Al (600 ${\AA}$). The prepared hole-only device with NBCA exhibited lower driving voltage than the device with 4-nitrobenzoic acid (NBA). OLEDs using NBCA also show high external quantum efficiency.

We have developed novel bipolar host materials, designed to have both electron transporting and hole transporting abilities, which show significant increase in luminance efficiency and decrease in driving voltage of green phosphorescent OLEDs. In case of the best host material, CheilGH-3, the driving voltage was decreased 27 % at a given constant luminance of $1000cd/m^2$. Also the luminance efficiency was enhanced 44 % and the power efficiency was almost doubled compared to the reference device using CBP as a host.

The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.

We have fabricated vertical type organic thin film transistor using tris-8-hydroxyquinoline aluminum $(Alq_3)$. The effects of the growth control of $Alq_3$ thin layer on the grain structure and the flatness of film surface have been investigated. In addition, we have fabricated light emitting transistor and then investigated electroluminescent properties.

We demonstrate highly efficient White Polymer Electrophosphorescent Light-emitting Diode using newly developed green and red light emitting heteroleptic iridium complex, Ir-(pq)2tpy, and blue light emitting fluorescent dopant, BczVBi. The best luminous efficiency reached 28cd/A with maximum luminance of 87000cd/m2. The scheme for determining optimum device architecture and dopant concentrations were constructed.

Anthracene derivatives, 9,10trimethylsilylanthr - acene(SA) and bis(2-phenylethynyl)trimethylsilyl anthracene(Si-BPEA) were synthesized and their emission properties were studied with UV and PL spectrometers. The PL maxima of anthracene, SA, bis(2-phenylethynyl)anthracene (BPEA), Si-BPEA were obtained at 401, 438, 475, 478nm, respectively. The electro-optical properties OLED devices made with these anthracene derivatives were discussed.

Characteristics of Al cathode films deposited by using specially designed twin target sputter (TTS) system were investigated. It was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature and OLEDs fabricated using TTS system have low leakage current density at reverse bias because of effective confinement of energetic particles during sputtering process.

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.

High-efficiency red phosphorescent OLEDs employing a novel red emitter and a multifunctional oligofluorene host are reported. With qazIr(acac) as the red phosphorescent dopant, a maximum external quantum efficiency of 19% and maximum power efficiency of 11 lm/W are achieved. In addition, single layer devices using such host and dopant materials have efficiencies up to 13%.

A new series of highly bright and efficient poly(pphenylenevinylene) s (PPV)s based on polyhedral oligomeric silsesquioxanes (POSSs) was synthesized via the Gilch polymerization method. The three POSScontaining PPVs are as follows: POSS05- PPV(containing 5 mol % POSS-appended PPV units), POSS25-PPV(containing 25 mol % POSS-appended PPV units), and POSS100-PPV(containing 100 mol % POSS-appended PPV units; this is the first ${\pi}-conjugated$ polymer composed of 100 mol % POSSsappended repeating units). The POSS-containing PPVs exhibit higher glass transition temperatures $(64-77^{\circ}C)$ than that of MEH-PPV $(58^{\circ}C)$, indicating that electroluminescence (EL) devices fabricated with these polymers should have good thermal stabilities. Light-emitting diodes (LEDs) with the configuration of ITO/PEDOT:PSS/polymer/Ca/Al were fabricated using the novel POSS-containing PPVs. Surprisingly, the luminescence efficiency (0.48 cd/A at $10540\;cd/m^2$) of the binary blend consisting 5 wt % of POSS25-PPV and 95 wt % of MEH-PPV was found to be enhanced by a factor of 6.4 with a maximum brightness of $11010cd/m^2$ (at 14.3 V).

We report on the fabrication and characterization of an OLED with an anode completed using screenprintable conducting polymer containing PEDOT: PSS. The demonstration of this organic transparent anode for OLEDs shows a good possibility for flexible displays using this polymeric electrode.

In organic light emitting diodes (OLEDs), the electrons and holes need to be injected efficiently to obtain the best device performance. This means that a small injection barrier height at the ITO/organic interface is required. In this study, the surface of the ITO anode was treated with an Aluminum oxynitride (AlON).

We have developed low voltage operating OLEDs with new electron transport layer. The device having a structure of ITO/2TNATA/HTL:Rubrene(1%)/HTL /new ETL/LiF/Al have been used. The voltage for achieving $1,000\;cd/m^2$ was 4.1 V, whereas the turn on voltage for the brightness of $1\;cd/m^2$ was 2.8 V. This high luminance at low operating voltage is caused by the high current density, resulting from high electron conduction property of the new electron transport layer.

We have developed the transparent passivation layer for transparent organic light-emitting devices (TOLEDs) using CsCl layer. The CsCl passivation layer improves the optical transmittance of Ca/Ag double layer which have used as a semitransparent cathode, resulting in substantial increase of the luminance by the enhanced light extraction out of the cathode surface of the TOLEDs.

OLED devices with a multilayer structure were fabricated using newly synthesized hole transport materials. We confirmed that ELM229 and ELM339, hole transport materials did not affect the electroluminescence color, and that by adopting this novel hole transport materials, OLEDs with a lower driving voltage but a higher efficiency were developed.

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

We demonstrate the use of screen printing in the fabrication of highly efficient phosphorescent polymer organic-light-emitting devices (OLEDs) based on a green-emitting $Ir(ppy)_3$ and a host polymer PVK. We incorporate PBD in the polymer host as an electron-transporting dopant and ${\alpha}-NPD$ as a hole transporting dopant. The best screen printed single-layer device exhibits very high peak luminous efficiency of 63 cd/A at a relatively high operating voltage of 17.1 V at the luminance of $650\;cd/m^2$. We observed the highest luminance of $21,000\;Cd/m^2$ at 35V. Due to the high operating voltage, despite of the high peak luminous efficiency the peak power efficiency was found to be 12.2 lm/W at the luminance of $470\;cd/m^2$ (15.9 V).

A top emission organic light emitting diode comprising of a triple anode on polycarbonate $film/TNATA/NPB/Alq_3:C545T/cathodes$ has been fabricated. The triple layer structure of Cr/Al/Cr allowed for fabrication of a crack-free anode and provided better higher work function than ITO anode.The anode showed compatibility with flexible plastic substrate and no crack was formed during bending test while ITO anode showed crack.

New heteroleptic tris-cyclometalated iridium complex, $Ir(ppy)_2(dpq-5CH_3)$, was prepared, where ppy and $dpq-5CH_3$ represent phenylpyridine and 2(5'-methyl)- 4-diphenylquinoline, respectively. The heteroleptic iridium complex shows high luminescence efficiency by the intramolecular energy transfer from the energy absorbing ppy ligands to the luminescent $dpq-5CH_3$ ligand leading to a decrease on quenching or energy deactivation.

Different from the LCD that have two glass substrates on the top and the bottom, EPD have an advantage that is using the bottom glass substrate and the top e-ink sheet. So, it is impossible to apply R or C type TSP that need bottom and top glass plane. We successfully implemented the TSP (Touch Screen Panel) based on the light over the EPD (Electro Phoretic Display).

The effects of stress on the IZO/PC substrate and the electro-optical properties of a flexible LCD with microstructure in bending were investigated. It showed that the IZO/PC substrate and the periodic cross spacers are good enough to be employed in the application of the ECB or polarization rotation LC mode.

This paper presents the fabrication of an electro-luminescence display, which is whollyprinted on a flexible paper substrate. We expect that the printed EL display can be a powerful alternative for general advertisement which is printed only with media ink.

We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

Commercial conductive metal inks are available, but metals used in these have unsuitable work function for efficient OLED device performance. Metals with low work function tend to oxidize easily, which makes it challenging to develop low work function metal inks. In this research we describe printed low work function Al cathode.

We have developed the synthesis method to reduce the surface oxide layer in Cu nanoparticle, which is based on controlling the molecular weight of capping polymer. In addition, we demonstrated how the variation of oxide layer thickness influences the resistivity of conductive Cu film.

Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

We fabricated a coplanar type organic thin-film transistors using ink-jet printed silver source/drain electrodes and ${\alpha},{\omega}-dihexylquaterthiophene$ (DH4T) which is an active layer. Use of ink-jet printed silver nanoparticle-based metal electrode assists the energetic mismatch with p-type organic semiconductor via modification of their interfacial properties to enable ohmic contact formation.

We have proposed novel bonding technique of substrates for developing the flexible LCD with high quality. The gel type mixture of agarose and UV curable epoxy developed to obtain tight bonding ability and enhanced electro-optical characteristic simultaneously. This technique can be used to roll-to-roll process for fabricating the flexible LCDs.

The buffer layer was spin-coated on the dielectric layer of OTFTs to introduce the hydrophobicity for enhancing the device performance. this functional layer contains the water-proof ingredient to reduce the surface energy and more importantly, does not harm the dielectric property of the dielectric layer. With the help of proposed hydrophobic layer, the transistor showed dramatic improvement at electrical performance which was almost 20 times higher mobility compared to the non-treated case. And on/off ratio was also guaranteed as $10^{5{\sim}6}$.

The research applied the processes of spin-coating and thermal-evaporating in proper order to deposit the hole transport material N,N'-Bis(naphthalen-1-yl)- N,N'-bis(phenyl)-benzidine (NPB) on the ITO substrate to make flexible organic light emitting diodes (FOLED) with double hole transport layer.

Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were fabricated on a flexible metal substrate at $150\;^{\circ}C$. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at $230\;^{\circ}C$. The field effect mobility was reduced because of the strain in a- Si:H TFT under thermal annealing.

A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.

In this paper, to compare thermal and chemical stabilities of poly-ethylene-terephtalate (PET) and polyether- surphone (PES), we fabricated Polymer Light Emitting Diode (PLED) on each substrate and analyzed these characteristics. Moreover, we analyzed the characteristics of the device deposited LiF (1 nm) before cathode deposition.

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

We investigated the field emission of single carbon nanotube including the anode effect by calculating the tunneling probability of an electron. The experimental results from this study were in agreement with our theoretical calculations. The constant enhancement factor was calculated using an approximation of the potential barrier.

Carbon nanotubes (CNTs) were synthesized by inductively coupled plasma CVD at $450^{\circ}C$. CNTs were grown on the 1-nm-thick Fe-Ni-Co with $C_2H_2$ and $H_2$ at different pressures and plasma powers. CNTs were grown longer in height as the $H_{\alpha}/CH$ ratios became lower by decreasing plasma powers and increasing growth pressures.

The improvement in the field emission parameters, luminescent uniformity, degradation rate and half life has been observed for the thin-multi wall carbon nanotube (t-MWCNT) composite, after incorporating the Zn nanoparticles. The Zn nanoparticles $(diameter\;{\sim}\;100\;{\pm}15\;nm)$ has been incorporated to synthesize the Zn-t-MWCNT composite.

Field emission properties of expanded graphite composite have been studied. Composite has been synthesized via shear mixing expanded graphite in ${\alpha}-terpineol$ and ethyl cellulose. Field emission properties, of screen printed composite has been measured at a static applied electric field. The details of the analysis have been presented.

The dispersion of carbon nanotubes in composite and their field emission superiority have been discussed. Four synthesis methods have been studied. The CNT-composite, synthesized by the combination of the chemical and mechanical dispersion routes shows superior dispersion as well as field emission characteristics as compared to other syntheses methods.

We studied the effect of current-aging on field emission from carbon nanotubes field emitter arrays (CNT-FEAs) selectively patterned by the resist-assistan tpatterning(RAP) process. After sustaining the electric field when starting emission current density $(J_s)$ is $0.1\;mA/cm^2$ during 40 hrs, it was observed that the field emission property and uniformity were remarkably improved due to the elimination of oxygen atom and thus the reconstruction of carbon bonding at the tip of CNTs during field emission.

Fabrication of dot-patterned carbon nanotube (CNT) emitters with excellent field emission properties using photo-sensitive CNT paste is described. The photosensitive CNT paste showed good photopatternability, which led us to easily form $10-{\mu}m-diameter$ dot arrays. We presented a parametric study on formulating the photo-sensitive paste and their resultant field emission characteristics.

This study investigated the effect of $H_2$ upon the growth of CNTs by changing the ratios of H2 to Ar during the growth using $C_2H_2$. With higher contents of $H_2$ in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios.

We have developed the adaptive contrast ratio enhancement algorithm for mobile LCD. This algorithm aims at effective contrast ratio enhancement with minimizing degeneration of color and white balance. It also is very simple to fit mobile LCD system.

For lower power and smaller size with higher image quality, it is desirable to have more units integrated on a display panel. It needs careful design considerations in selecting CMOS, SOP or PCB. An experimental display system is designed and power and delay considering chip area, data rates and bus width are analyzed for all technology combinations to obtain optimum design methodologies.

A hardware architecture is presented of a wavelet based multiple line addressing driving scheme for passive matrix displays using the FPGA (Field Programmable Gate Arrays), which will be integrated in the scalable video coding $architecture^{[1]}$. The incoming compressed video data stream will then directly be transformed to the required column voltages by the hardware architecture without the need of employing the video decompression.

SRAM cell array and peripheral circuits on display panel are designed using LTPS process. To overcome low yield of SOP, high speed parallel fault detection circuitry for memory cells is designed at local I/O lines with minimal overhead for efficient memory cell redundancy replacement. Normal read/write and parallel test read/write are simulated and verified.

Recently, mobile video communication is getting more and more popular. Visual quality and computational complexity are primary factors affecting performance of video communication. Frame rate up-conversion (FRC) is necessary for achieving high visual quality in mobile projection displays. In this paper, a FRC method using motion compensation based on block matching algorithm (BMA) with adaptive block size is proposed. In order to improve the accuracy of the estimated motion vectors, the motion vector refinement technique is proposed. Experiment results indicate that the proposed technique exhibits better performance with lower hardware complexity compared to the conventional methods.

We present a hybrid hardware architecture capable of encoding and decoding a full HD resolution video with 60 fps. A number of technical modifications are applied to an existing image compression algorithm not only to accommodate large videos at a high frame rate but to enhance the quality of synthetic images, such as characters and video game images. Image quality of the proposed algorithm at a 1/6 compression ratio was comparable to that of the BTC based 1/3 compression algorithm.

Two new impulsive driving technologies for use in 120Hz LCD panels are proposed to improve moving picture quality. One technology generates the dark frame using an adder and a shifter simply without using any LUTs. The other is a backlight flashing method designed to avoid ghost images. Using the PBET metric, measured MPRT values were 10.8ms and 4.4ms, respectively.

This paper investigated a gate driver circuit with amorphous silicon for mobile TFT-LCD. In the conventional circuit, the fluctuation of the off-state voltage causes the fluctuation of gate line voltages in the panel and then image quality becomes worse. Newly designed gate driver circuit with dynamic switching inverter and carry out signal reduce the fluctuation of the off-state voltage because dynamic switching inverter is holding the off-state voltage and the delay of carry signal is reduced. The simulation results show that the proposed a-Si:H gate driver has low noise and high stability compared with the conventional one.

This paper presents a thermally adaptive driving (TAD) technology for response time compensation of LCD with integrated sensor. The TAD is comprised of analog sensor signal conditioning and a digital feedback algorithm. Utilizing with a digital feedback system, TAD reduces response time of nearly 50% over the temperature range $0^{\circ}C-60^{\circ}C$.

A high-speed and accurate analog buffer is proposed for mobile display using LTPS TFTs. The proposed analog buffer is common source type with sampling and negative feedback mode. Therefore, driving speed of the proposed buffer is faster than previously reported one. In addition, the accuracy is very high because of high negative feedback gain. The simulation results show that maximum mischarging voltage of the proposed buffer is 8mV and previously reported one is 37mV. And Power consumption of the proposed buffer is $43.1{\mu}W$, which is 73% of previously reported one.

A low power and small area source driver using LTPS TFTs is proposed for mobile applications. This source driver adopts level shifter with holding latch function and new R-to-R type digital-to-analog converter (DAC). The power consumption and layout area of the proposed source driver are reduced by 23% and 25% for 16M colors and qVGA AM-OLED panel, respectively.

We propose a novel digital driving method for AM-OLED (Active Matrix-Organic Light Emitting Diode) display. Proposed method modulates $V_{DD}$ so that luminance may be weighted in accordance with the bit significance. We can increase the minimum emission time or slower scan circuits are applicable by using proposed method.

In this paper, a vertical block mura, which massively occurred in the LCD products, was investigated extensively by various methods, source drain (SD) line shift is found out to be one of the key reasons. This work to some extent, establishes theoretic hypothesis for further research and solutions similar issues.

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.

We report on the alignment properties of new cellulose based photopolymer. The LC alignment quality and image sticking property of the TN and IPS cells made by using the photopolymer were investigated. Thermal and UV stability of those properties were also investigated. Excellent LC alignment quality and stability were obtained particularly in IPS mode.

Durability of LCD glass, OA-10 and OA-21, to $SiCl_4$ and $SF_6$ gases was investigated. Reaction products are generated on the glass surface. The reaction products are reduced by changing the etching conditions. the durability of OA-10 and OA-21 to the dry etching gases is comparable.

ZnO nano film for transparent thin film transistors is prepared by injection type source delivery system of atomic layer deposition. By using this delivery system the source delivery pulse time can dramatically be reduced to 0.005s in ALD system. ZnO nanofilms obtained at $150^{\circ}C$ are characterized.

In PDP, bus electrode should have low resistance for high efficiency. The transparent dielectric affects the shape change of bus electrode during the firing. These are related with the electrical property of the electrode. In this study, the shape of electrode was controlled by firing schedules of the transparent dielectric and the bus electrode.

In order to solve image sticking phenomena, the gas-phase and liquid-phase interfacial reactions of photosensitive polyimide can annihilate photoreactive carbon-carbon double bonds, which remain after photo-alignment process. The annihilation processes dramatically affect residual DC and photochemical reorientation of photoactive functional groups.

We have synthesized a novel fully soluble and low-temperature processable polyimide gate insulator (KSPI) through one-step condensation polymerization. For the preparation of KSPI, 5- (2,5-dioxytetrahydrofuryl)-3-methly-3-cyclohexene- 1,2-dicarboxylic anhydride (DOCDA) and 4,4- diaminodiphenylmethane (MDA) were used as monomers and fully imidized KSPI was completely soluble in organic solvents like ${\gamma}-butyrolactone$ and 2-butoxyethanol, etc.

Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the $mobility\;{\sim}\;0.01\;cm^2V^{-1}s^{-1}$. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication.

Refractive index of glasses is important to develop a photosensitive paste for barrier rips in PDP. We investigated the refractive index and dielectric constant of glasses by contents of silica in $B_2O_3-Al_2O_3-SiO_2$ glasses. It is confirmed that the refractive index of the glass system is changed by the composition of glasses

This study discussed the effect of ink adhesion on color filter glass after different kinds of plasma treatment. From contact angle analysis, we could get different ink adhesion results after HMDSZ, $O_2$, IPA, and $CF_4$ plasma treatment. Substrates after PFMCH plasma treatment have good surface hydrophobic property, and contact angle raise from $<10^{\circ}\;to\;50^{\circ}$.

Photopolymerization and phase separation behavior during the PDLC formation process were investigated by simultaneous resistivity and turbidity measurement. Using this experimental method, we investigated the effect of liquid crystal structure on photopolymerization and phase separation behavior.

We report the syntheses and characterizations of a novel TTF derivative. To extend the mesogenic core, alkoxy naphthalenic group and short alkyl chains were introduced on either side of TTF unit, which results in asymmetric planar structure. TTF molecule is expected to show many interesting properties.

A series of new photosensitive polyimides having long alkoxy cinnamate chains were synthesized for liquid crystal (LC) photoalignment material. The polymer after irradiating linearly polarized UV light induced homogeneous and stable LC alignment. The chemical structure of the polymeric material was characterized and their photochemical LC alignment behavior was evaluated.

Transparent electrodes for a flexible display based on the liquid crystal (LC) were formed by carbon nanotubes (CNTs) on polyethylene terephthalate (PET) substrates. The thin multi wall carbon nanotubes (t-MWNTs) networks for electrodes were obtained by filtration- transfer method from welldispersed CNTs solution.

We introduce non-contact surface modification using trimethylchlorosilane (TMCS) for thin film transistor application. The surface is not contacted to the TMCS solution because it is vaporized at room temperature. The hydrophobic surface with contact angle $of\;{\sim}\;70^{\circ}$ can be achieved by the transfer of TMCS using a PDMS mold.

We reported a simplified circuit model to investigate the interface states and the quality of a-Si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thin-film transistor and to obtain the important parameters.

Thin Film Transistor (TFT) manufacturing process is complicated. Electrostatic discharge (ESD) occurs during every process step. This paper describes ESD phenomena in terms of TFT design and processing flow. The abnormal contact between equipment and glass is found out to be the key reason causing ESD.

We developed the laser annealing system using green laser of 261W(5kHz) and 75.5mJ/pulse(2kHz). We confirmed that this system makes it possible to form two kinds(large or uniformed grain) of poly-Si by changing its polarized directions. By using ${\mu}-crystal-Si$ as irradiated films, grain size uniformity is better than that using a-Si.

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

A laser thermal printing system was developed to fabricate OLED. A single mode fiber laser beam was diffracted by an acousto-optic modulator. The diffracted beam was sent to a galvanometer to print organic film on ITO glass with resolution of $30\;{\mu}m$.

In the usual dry etching process for the TFT-LCD fabrication, it is hard to monitor the basic plasma parameters such as density and temperature. However, the basic parameters are easily monitored during the dry etching process. We have simultaneously measured the electric characteristics and basic plasma parameters of the dry etching chamber during the process, analyzed them to interpret plasma parameters. For the Ar plasma discharge case, we could obtain the density and temperature from the electric characteristics using a simple simple sheath model.

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

In order to understand the doping control for the belt source evaporation, the Alq3 and NPB were codeposited on the Ta plate to re-sublimate. The very slow heating $(0.1^{\circ}C/s)$ of the Ta plate shows the separated rate signals of Alq3 and NPB sublimated from the Alq3-mixed NPB organic film on Ta plate. The ratio of the vapor rates of Alq3 and NPB was measured as same as that of each sublimation rates. Therefore, the doping control of the belt source evaporation is of the ratio of the vaporization rates of host and dopants.

An inductively coupled plasma source with internaltype linear inductive antennas named as "multiple Utype antenna" was developed for the substrate size of $2,300mm\;{\times}\;2,000mm$. High density plasmas on the order of $1.18\;{\times}\;10^{11}\;cm^{-3}$ could be obtained and the RF power of 8kW with good plasma stability.

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the $TiO_2$ coated CNT as a field emitter. $TiO_2$ nanoparticles can coated on CNT surface by chemical solution method. $TiO_2$ nanoparticles had uniform size with the average size of about 2.4 nm to 3.1 nm. Field emission performance of CNT coated with $TiO_2$ nanoparticles was evaluated and discussed.

The objective of the research presented in this paper is to design a highly efficient LCD-TV backlight unit (BLU) which minimizes lamp count without light leakage from the BLU. A new optical plate helps to successfully distribute spatial luminance in a 46inch LCD-BLU consisting of only 20 CCFLs.

The electrooptic characteristics of 32-inch multichannel-structured, mercury-type flat fluorescent lamps have been investigated in detail. The luminance and the lamp current/voltage have been monitored by changing the driving conditions such as duty ratio, backlight conditions. It was found that the efficiency became the maximum at the duty ratio of 50 % with a nearby metal plate.

In order to improve the performance of LCD, chiral dopant is added to liquid crystal mixture. When we decide the rubbing direction, we must consider the rotation direction of liquid crystal molecules by chiral dopant. When the rotation direction of liquid crystal molecules caused by dielectric torque decided by rubbing direction and that decided by chiral dopant are coincided, the performance of LCD would be improved along to our initial cell design intentions.

In the present study, we propose MC simulation that takes interface phenomena between liquid crystal and substrate into consideration. We use rigid model molecules of liquid crystal and substrate. Interface is generated using potential field that induces decomposition of molecules.

We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage and a very low curing intensity are effective in fabricating the cell with a high bright state, a low dark state and therefore a steep T-V curve. However, the response time of the cell is slow. Finally, a dual-frequency PSLC pi cell with fast response time is developed. The obtained result reveals that the dual-frequency PSLC pi cell has a fast response of under 1ms.

The electrical characteristics of organic thin-filmtransistor (OTFTs) can be improved by inserting adhesion layer on gate dielectrics. Adhesion layer was used as polymeric adhesion layer deposited on inorganic gate insulators such as silicon dioxide $(SiO_2)$ and it was formed by vapor deposition polymerization (VDP) instead of spin-coating process. The OTFTs obtained the on/off ratio $of{\sim}10^4$, threshold voltage of 1.8V, subthreshold slop of 2.9 V/decade and field effect mobility about $0.01\;cm^2/Vs$.

A 14.1-inch reflective type Thin Film Transistor-Electric Phoretic Display was developed at the esolution of 1280 x 900 lines on plastic substrate. All of the processes of TFT were carried out below $100\;^{\circ}C$ on PES plastic films. The process conditions of TFT were optimized for large area TFT-LCD on plastic substrate. At $60^{\circ}C$ high temperature during 160hours, TFT does not delaminate and IV characteristic is also satisfied.

The effect of the modification of the front surfaces of flat fluorescent lamps (FFLs) on the light-output distribution has been investigated by using a ray tracing method and several kinds of microlenses. It was found that microlenses have substantial effects on the light-output distribution, which might be used to reduce the number of optical films in the FFL-backlight unit for LCD applications.

The black/white electronic ink containing high mobility white nano particles and the organic black pigment particles dispersed in dielectric fluid were prepared. A charge control agent affects the electrophoretic zeta potentials of white particle, which show the maximum value in zeta potential. The electronic ink panel fabricated with the charged white particles and the black particles exhibits more than 15:1 contrast ratio at 10V.

Relationships between field effect mobility and grain size on pentacene thin-film transistors with $polyimide/SiO_2$ gate dielectrics have been studied. 6 kinds of polyimide were used as surface treatment gate dielectric layer. Grain size of the pentacene thin film were between 5 and $30\;{\mu}m$ and depended on the polyimide. The field effect mobility were also depended on the polyimide and the those values were from 0.027 to $0.69\;cm^2/(Vs)$. The field effect mobility tends to increase with increasing the grain size. Precursor type polyimide containing polyamic acid show better mobility of $0.69\;cm^2/(Vs)$ than soluble type polyimide. Bias stress characteristics in air are discussed in the basis of the grain size.

We demonstrate a hybrid device with high ambien t-contrast-ratio (>133.8:1) under any ambient co nditions by vertically integrating a reflective LCD and a transparent OLED. The twisted nematic LC cell is placed beneath the OLED to improve dev ice transmittance by 53.8% due to the asymmet ric emission from both-sides of the transparent OLED.

Liquid crystal (LC) devices can be operated as amplitude modulators and phase modulators. They usually require two polarizers; therefore the optical efficiency is limited. We introduce two general principles of polarization-free liquid crystal devices and also show several LC devices by applying the principles.

The authors report methods of fabrication singlelayer color cholesteric liquid crystal displays (CLCDs). A single-layer CLCD has been prepared from a polymerstabilized cholesteric liquid crystal. The unique feature of the polymer stabilization is in that the electrically switched colors preserve high reflectivity. A bistable single-layer CLCD has been prepared by the formation of polymer barrier walls and light-tuned cholesteric pitches to reflect blue, green and red color sub-pixels.

In this review, several aspects for improving the quality of materials parameters of Nematic Liquid Crystals (NLCs) and Ferroelectric Liquid Crystals (FLCs) will be discussed. In particular the decrease of the response time is a need. It will be demonstrated that the materials parameters of NLCs and FLCs can be improved among other ways due to optimization of chemical structures of the NLCs and /or FLCs mixtures, due to doping them with nanomaterials and by using fast elastic relaxation processes.

Depending on applications where transmission bandwidth, wire distance, power consumption and EMI environments vary, design trade-offs must be made to optimize the display interface. After introducing the digital display interface architecture, topics such as cost, EMI, signal integrity, scalability and content protection are discussed with available techniques. Implementation issues are discussed regarding their cost and design complexity. Existing standards are reviewed and comparison on their strengths and shortcomings are discussed.

Achieving white balance is one of the key issues for LCD image quality enhancement. A well-known color correction algorithm is Accurate Color Capture (ACC). Determination of ACC correction values has been time consuming as past methods have required trial-and-error analysis of differences between predicted and measured values. We propose a new ACC value determination method that uses spatially emulated patterns and measured values on patterns.

This paper proposes a novel RGB-LED (light emitting diode) backlight system, for 32" LCD TVs, accompanied by a new X-Y Channel driving method in which its row and column switches control the individual division screen. This proposed driving method is able to produce division driving effects such as image improvement and reduced power consumption. Not only that, the number of driver needed in this method, that is 3 power supplies with 3*(m+n) switches, is much fewer than that of cluster driving method, that is 3*(m*n) driver.

In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

We report the fabrication of a new inverted OLED devices having potential to be used for both AMOLED and lighting applications.

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL

High efficiency in Phosphorescent Organic lightemitting diodes using carbazole type exciton blocking layer were investigated and detailed mechanism for light emission process was studied. Efficiency of green PHOLEDs was enhanced by a factor 3.7.

Highly efficient inverted bottom emission organic light emitting device (IBOLED) with a structure of ITO/EIL/Alq3/NPB/WO3/Al was investigated. To enhance electron injection from ITO cathode to Alq3 EML layer, we introduced ultra thin Al layer and Liq layer between ITO and Alq3. The device characteristics showed tune on voltage of 4.5V, the maximum luminance of 21100 Cd/m2 and current efficiencies of 3.56 Cd/A.

I introduce two experiments that investigate temporal factors of stereopsis: one is for depth perception and the other is for perception of motion in depth. Both studies show that there are multiple mechanisms to process depth information with different temporal characteristics.

The interactions between two-dimensional and three-dimensional stimulus configurations on visually induced self-motion perception (vection) were examined. The experiment revealed that there is no 2D-3D interaction, and vection strength is determined solely by the size of the moving background stimulus, which should be a primary factor in inducing vection.

In this paper, we propose a color image improvement method. The proposed algorithms are classified with the adaptive contrast stretching method for contrast enhancement and the adaptive saturation enhancement method for saturation enhancement. The adaptive contrast stretching method is to compensate a significant change of brightness while luminance is processed. The adaptive saturation enhancement method inhibits its saturation from de-saturation and oversaturation while chrominance is processed. The proposed algorithms are focused on a preference color processing in order to generate better image quality than the algorithms focused on a uniform color processing for human vision.

Motion blur of LCD displays has been measured subjectively by using Gabor patch radiusese. Gabor radiuses at a normalized scroll speed, Scroll speed times Fc, to be unity, indicate motion blur strengths, which are named a perceived motion blur strength measured by a Gabor patch. The results are compared with eye perception, PBET and EBET.

We mainly report recent progress in backlight unit (BLU) for liquid crystal display (LCD) using printed carbon nanotubes (CNTs) including top-gate and lateral gate structures. Lighting performances of CNTBLU and longevity of printed CNT emitters are intensively discussed. Selected issues related with field emission display (FED) using the same emitters also are presented.

Extremely sharp and uniform Transfer Mold FEAs with thin film low work function TiN emitter material have been fabricated by controlling the thickness of the coated emitter materials to realize high efficient, high reliable and low-cost vacuum nanoelectronic devices..Their tip radii are 8.3-13.8 nm. Turn-on electric fields of the Ni FEAs and TiN-FEAs resulted in the low electric field values of $31.6\;V/{\mu}m$ and $44.2V/{\mu}m$,respectively, at the short emitter/anode distance: less than $30\;{\mu}m$, which are lower than those of conventional FE As such as Spindt type FEAs and carbon nan otube FEAs The Transfer Metal Mold fabrication method is one of the best methods of changing emit ter materials with sharp and uniform emit ter shapes.

One of the important roles of glass is safety guarantee in CRTs. It is working under high vacuum and has to be maintained continuously for the atmosphere pressure, humidity, and excitation etc,. This paper propose to CRTs glass design method via the stress positioning control for slim CRTs using FEM to ensure the national safety standard and newly demanded safety standard by CRTs set makers.