The high frequency and quasi-state C-V curves were measured to determine the interface state density in MNOS devices. Berglund method was appropriate for determination of energy distribution of interface state density all over the energy gap. Applying Vg vs Øs relation by Berlund method to comparison-analysis method of the high-frequency and quasi-static C-V curves, we were able to determine the energy distribution by only measured C-V curves without theoretical C-V curves. The interface state density near the conduction band was high at lower temperature than room temperature.

Effect of isothermal aging on the crystallization of $Fe_{78}B_{13}Si_{9}$ metallic glass has been investigated by electrical resistivity, X-ray measurements, bending test, thermal analysis and transmission electron microscopy. Amorphous $Fe_{78}B_{13}Si_{9}$ alloy was annealed isothermally for 5 to 1200 mon. between 300 C and 540 C. It has been found that close relation between relative resistivity and X-ray diffraction pattern showed. The crystalline peak of $\alpha$-(Fe, Si) and Fe$_2$B are detected by X-ray experiment. The crystalline phases observed by TEM show $\alpha$-(Fe, Si) and Fe$_3$B with dendritic and cylindrical morphology, respectively. It has been also found that the embrittleness of aged samples rapidly increased with the crystallization and was shown before the crystallization.th the crystallization and was shown before the crystallization.

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})0_3-BaTiO_3PbTiO_3(0.05{\leq}x{\leq}0.20, 0.05{\leq}y{\leq}0.15$) ternary compound ceramics were fabricated by the mixed oxide method. The dielectric properties with temperature and frequency of the specimens were investigated. Relative dielectric constants of the specimens were increased with $BaTiO_3$ contents. Increasing the $BaTiO_3$contents, the variation in the relative dielectric constant with frequency, the temperature coefficient of capacitance (TCC) and the dielectric loss were decreased.

Degradation effects observed in nonvolatile MNOS memory devices with in increasing W/E (Write/Erase) cycling were investigated using n-type MNOS capacitors. The results showed that the density of Si-SiO$_2$ interface states and the conductivity of nitride were increased with W/E cycles, therefore the memory retention characteristics of the MNOS memory devices were degraded. Also, annealing of the degraded devices restored the original Si-SiO$_2$ interface states density, but failed to restore the original nitride conductivity. Based on these experimental results, we found that the degradation of memory retention characteristic was affected by the nitride conductivity rather than by Si-SiO$_2$ interface states.

유기전하 이동착제 합성의 중요한 중간체인 LiTCNQ의 전기적 특성을 측정하였으며 온도 증가에 따른 전도도 변화로부터 LiTCNQ의 활성화 에너지를 구하였다.

Composition with O-3 connectivity were fabricated from PZT and phenolic resin powders. These composites were investigated for dielectric and pizoelectric properties with PZT-polymer interface porosity variation. The interface porosity dependence of dielectric and piezoelectric properties was especially discussed by porosity factors. The interface porosity dependence of piezoelectric constant was larger than that of dielectric constant. It was considered that the interface pore plays the role of a stress buffer. Thus the local stress applied on PZT particles in the composite was remarkably diminish.

Polycrystalline CdS films were prepared by coating a slurry, which consisted of Cds, 11w/o of CdCl$_2$ and various amounts of InCl$_3$on the glass substrate and by sintering in a nitrogen atmosphere. Measurements on the electrical and optical Properties and observation on the microstructure of the sintered films were made. It was observed that the carrier concentration in the films remains almost constant on the addition of InCl$_3$. Optical transmittance remains constant on the addition of InCl$_3$ up to 3w/o but it decreases with further increase in InCl$_3$.

From the study of mechanism of electrical conduction of film which is made from Polyethylene Terephthalate at very high temperature which is larger than low electric field and glass transition point, we find that there is a extraordinary non ohmic region (I∝V$^n$, 0

High TC Y-Ba-Cu-O Superconductors were fabricated by sintering, sinter+HIP encapsulation. Specimens were sintered at 920$^{\circ}C$∼960$^{\circ}C$. A part of sintered specimens were treated by HIP, and HIP conditions were 150 MPa, 880$^{\circ}C$, 30min under the Ar atmosphere. The relative density of HIP specimens was increased 5∼8% in comparison with sintered one(90∼93% relative density). X-ray analysis represented the orthorhobic-tetragonal phase transition with annealing condition. Tc measurements showed a sharp drp within 3$^{\circ}C$, 91K onset and 89K offset. Transport current density(Jc) of sintered specimens showed typically∼159A/㎤ but that of sinter+HIP encapsulation was decreased to∼89A/㎤ because of insufficient oxygen diffusion, Hardness(H) and Toughness(Kc) were increased to 38GPa; and 2.9 MPam$\^$$\frac{1}{2}$/, respectively.

This paper deals with the effect amino silane coupling agent for the composite insulating material (GFRP). Three kinds of coupling agent treatments are studied, that is treatment on glass fiber, epoxy resin and both glass fiber and epoxy resin. The result shows that the optimum electrical and mechanical properties is obtained for the sample treated on the glass fiber with 0.3% amino silane water solution.

Structural and magnetic properties of Co-Cr-Mo films were investigated in connection with sputtering conditions. Films were prepared using a convention RF sputtering system. X-ray diffractometry, scanning electron microscopy and transmission electron microscopy were employed to investigate structure properties. Vibrating sample magnetometry was used for coercivity and saturation magnetization measurements. Co-Cr-Mo films displayed reasonable values of perpendicular coercivity and saturation magnetization for perpendicular recording media and showed good perpendicular orientation of the hcp c-axis to the film surface. Perpendicular coercivity was strongly dependent upon substrate technique showed better c-axis orientation than hose using the stationary substrate. Co-Cr-Mo films of 2.9 at. % Mo content showed maximum perpendicular coercivity and saturation magnetization. The films deposited at lower Ar pressure showed good magnetic properties. There was no explicit relationship between the columnar structure and c-axis orientation. Co-Cr-Mo films was found to have suitable structural and magnetic properties for perpendicular recording media.

This paper discusses dynamic properties of bubble garnet thin films. The dynamic properties considered are Gilbert damping parameters, saturation velocity, and wall mobility. The parameters are evaluated to facilitate the search for desirable garnet thin film compositions. Given bubble diameter and Q-value, the computer prints out all compositions which meet the desired requirements. The computer model determines magnetization, anisotropy, damping, velocity, mobility among others from the film compositions. The computer modeling program is described by an algorithm detailing its operation.

Lead titanate powders were prepared by mixed-oxide and sol-gel method. O-3 composites were prepared with these powders using Eccogel polymer. According to the volume percent of the PbTiO$_3$ powders, dielectric, piezoelectric properties and poling conditions were investigated. Relative dielectric constants were exponentially increased with volume percent of PbTiO$_3$. Piezoelectric strain coefficients (d$_{33}$ ) were increased with volume percent of PbTiO$_3$. Figure of merit (d$_{h}$.g$_{h}$) for the O-3 composites prepared by the mixed-oxide and sol-gel method were 2728(x10$^{-15}$ $m^2$/N) and 3100(x10$^{-15}$ $m^2$/N) at 70 volume percent of PbTiO$_3$, respectively.ely.

A film is fabricated by depositing several slices ultra thin films on a slide glass. The UV-absorbance outcomed on a multi-layered bulky ultra thin film with (N-docosyl pyridinium)-TCNQ (1:2) complex results tat the quantity of UV-absorbances becomes more linearly according to the number of layer becomes higher. In addition, it is found that the capacitance of this film gets smaller as the number of layer gets higher. Finally, the conductivity of this film is measured by the direction of the long axis of the TCNQ radical anion, and is resulted in a remarkably low value (about 1.66∼3.78 x 10$\^$-14/S/cm).

The dielectric properties of glass ceramics with BaTiO$_3$ crystallites are described. In this study measurements were made over the frequency range 1kHz-10MHz and temperature range $25^{\circ}C$-15$0^{\circ}C$. There are several minor constituents in the glass which needed to obtain the desired properties. The fluorine ion substitutes for oxygen in glass-crystallized BaTiO$_3$. And additions of Mg ion is used to shift the Curie temperature. We show the addition of Mg ion lowers the Curie point to about 323。K.

The present investigation has been performed on the manufacturing process of Ni-P doped W-Cu electric contacts by infiltration techniques. The addition of small amount of Ni-P alloy aimed at forming a rigid and homogeneous skeleton structure of W-powders which favours subsequent infiltration process of Cu-melts. The experimental results revealed that the small addition of Ni-P alloy appreciably enhances the sintering process of W at low temperatures (even at 1000$^{\circ}C$), simultaneously causing a considerable change of skeleton Morphology and its related best infiltration behaviour of Cu-melts.

In this paper, thermally stimulated currents (TSC) of corona-charged PTFE film were studied. Corona electrets which were formed by applying high voltages ${\pm}$5∼${\pm}$8[kV], to PTFE film of 100[$\mu\textrm{m}$] thickness, were experimented to measure TSC in the temperature range from -100[$^{\circ}C$] to 200[$^{\circ}C$]. As the result, four peaks of ${\gamma}$, ${\beta}$$_2$, ${\beta}$$_1$ and ${\alpha}$ were obtained at the temperature of -40[$^{\circ}C$], 30[$^{\circ}C$], 90[$^{\circ}C$] and 170[$^{\circ}C$], respectively. Speaking of the origins of these peaks, first of all, ${\gamma}$ peak is believed to show up by virtue of CF$_2$groups. B$_2$ peak seems to turn up by detrapping of the electrons which are accelerated by the corona exposure. ${\beta}$$_1$ peak looks to be ascribed to detrapping of the dipole and the trapped electron. Finally, ${\alpha}$ peak appears to result from detrapping of the electrons which are trapped in the para-crystalline region.

The capacitance-voltage (C-V) characteristics of poly-Si gate MOS devices fabricated by Low-Pressure Chemical Vapor Deposition (LPCVD) system have been studied. In the case poly-Si gate, work function difference and surface state charge density was found lower than that of Al gate. This fact was identified from the C-V curves that flatband shift was shown small due to the hydrogen gas diffused into oxide in processing of alloy and the annealing effect in processing of poly-Si deposition.

In the present study, we have investigated a novel photothermal imaging technique in $80^{\circ}$ deposited Ge Se film which do not utilize silver and deposited a-$Ge_{25}Se_{75}$ films was measured with the exposure time and annealing time. The results showed that the maximum changing rate of thickness was 3% in exposured film and 14% in postexposure annealing film.

In this paper, the compositional and sintering time dependences of dielectric, electrooptic properties for X/55/45([Ca$.$La$.$Nb]/Zr/Ti)CLN-PZT ceramics, where X is ranged from 3.0 to 11.0 mol %, have been investigated. As CLN mol% is increased, density, curie-temperature and dielectric constant are decreased, and also grain size and transmittance are increased, With the increment of CLN mol %. longitudinal mode electromechanical coupling coefficient is decreased and P-E hysterisis loop became slim-loop slowly. The crystal structure of CLN-PZt ceramics is changed from rhombohedral to tetragonal and pseudo-cubic according to the increment of CLN mol%.

This paper is investigated on the diffraction grating formation of the amorphous As-Se-S-Ge films. AS$\_$40/Se$\_$15/S$\_$36/Ge$\_$10/ film of thickness 0.76 $\mu\textrm{m}$ has achieved a high diffraction efficiency of 4.6%. In this film, high diffraction efficiency is increased to 18% by chemical etching.

The instability of MOS devices is mainly caused by the oxide charges, and as the need to develop the gate metal grows researches for various new metal gate have been performed, and in these researches, the difference work function existing between the metal and the semiconductor should be considered. Here int his paper, the device is made by the sputtering and the LPCVD method using pure Al, compound metal. poly-si, as a gate metal, the result of the research was shown that the work function difference from using different gate metals effects on the flatband voltage shift. This means we can infer that the threshold voltage adjustment is possible by using different gate metals and this whole mechanism makes the devices behavior more stable.

The material system (Bi$\sub$0.7/Pb$\sub$0.3/)Sr$_1$Ca$_1$Cu$\sub$1.8/Ox forms, at 845$^{\circ}C$, two major phases having a high Tc(100K) and a low Tc(∼70K) both of which consists of platelets and a non-superconducting minor phase which has rod-like shape and isolated by the major phases. As the sintering period increases, the amount of high Tc phase increases accompanying the decrease in low Tc phase while the amount of the non-superconducting phase is sintering period independent, resulting in a superconductor with Tc of 100K. Changes in compositions of each phase also occur during sintering due to evaporation of bismuth and lead.

GdBa$_2$Cu$_3$Ox superconductors were prepared by ceramic powder compacting method. X-ray powder diffraction patterns and SEM microphotographs were taken to analyze phase and microstructure, and electrical properties were investigated by 4-point probe method. The results show that the $N_2$atmosphere enhances the formation of high Tc(critical temperature) phase, but the Tc is independent of sintering conditions.

The dielectric properties of complex perovskite compound Sr$(Mg_{1/3}Mb_{2/3})$$O_3$-Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$(BMN) system were investigated as a function of composition and sintering time. In the case of the specimens sintered at $1650^{\circ}C$ for same time, dielectric constant and dielectric loss were increased with increasing the mole ratio of BMN. The maximum temperature coefficient of resonant frequency was found in composition Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$. In the case of the specimens with same composition, dielectric constant and dielectric loss were slightly increased with increasing the sintering time. As the sintering time was increased, the temperature coefficient of resonant frequency for SMN was slightly increased, however, that of BMN and ($Sr_{1/2}Ba_{1/2}$) ($Mg_{1/3}Ta_{2/3}$)$O_3$ was largely depended on sintering time.

In this study, the electrical conduction properties of plasma-polymerized (MMA+Styrene) thin film have been investigated. The measurements of transient conduction currents were carried out in the temperature of 50 to 150$^{\circ}C$ at electric field of 10$^4$to 10$\^$6/V/cm. The electric field-current density characteristic curves were divided into three regions-ohmic region, child region, sudden-increasing region. It is shown that the conduction mechanism of this thin film is in good agreement with SCLC(space charge limited current) model by applying the high field conduction theories.

W/WC-Cu/Ag contacts of 60wt%-40wt% base and contacts with additives(Ni, Co, C) of 1wt% below were prepared by a press-sinter-infiltrate process to compare with their physical properties and arc erosion characteristics. In physical properties, electrical conductivity of contacts with additive is lower than that of base contacts but hardness is higher. The results of arc test show that the erosion rate of contact with -0.1wt% Ni is decreased.