Static electricity is an everyday phenomenon. There can be few of us who have not experienced a static shock after sliding across a car seat. Other static nuisance effects include the cling of some fabrics to the body, the sticking of a plastic document cover, or the attraction of dust to a TV or computer screen. However, static electricity has been a serious industrial problem. The age of electronics brought with it new problems associated with static electricity and electrostatic discharge. And, as electronic devices became faster and smaller, their sensitivity to ESD increased. In this work, We are study on the control technique of electo-static discharges using semiconductor circuits. Our circuits are prevented well to electrostatic shock or damages from triboelectric charging in cars everyday life.

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}:Co$ single crystals were monoclinic structure. The temperature dependence of optical energy gap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

Ground connection began by experimenting lightning with the use of a kite and it means electric appliances, communication equipments, measuring instruments and so on connecting the Earth in order to flow away overcharged electricity. There are two kinds of earth connection: Power Ground and Signal Ground. Power Ground is for preventing an electric shock and in general there's no current in the connector. However in an accident, there's a quick flow of electricity out to the Earth. Signal Ground is not only for the safety of appliances but also for the safety of equipment operation. This paper is about connection for noise and interference reduce in order to prevent wrong operation and distortion of signal in the electrical appliances which can take place in cable TV.

본 논문은 냉, 난방 디지털 온도 조절계(SPC 50)의 Etl의 편차 정 동작에 관한 구현장치 제작과 비례 미.적분기가 At 및 비 At기능에서 설정온도를 $100^{\circ}C$를 유지하는데 기인된 전압전류 및 전력데이터 획득의 요인과 비례미적분 정수 및 노 개선점을 연구하였다. 설정온도를 유지하는 온도변화는 At기능에서 $96.7^{\circ}C\sim102^{\circ}C$ 이며, 비At 기능에서는 $97.6^{\circ}C\sim100.2^{\circ}C$이었다. 온도유지 전압변동은 At기능에서 2V~217V이며, 비 At기능에서 20V~217V 이었다. At와 비 At 기능에서 설정온도 $100^{\circ}C$을 유지하는데 온도를 냉각시키는 환풍기가 온. 오프 되는 시간차는 20초 정도 발생하였다. 온도차 및 전압차는 두 기능간에 비례 미. 적분값 설정이 자동 및 수동이냐에 따라서 차이를 보여주었다. 두 기능에서 설정된 온도값 유지에 따른 전압전류의 승압과 하강의 변동된 변환 데이터는 설정된 온도가 성취되어지는 시간차 및 설정값 유지의 특성을 요인으로 한 PID값과 노의 개선점에 길잡이가 된다.

ECT(eddy currentign testing) is very effective technique to detect a flaw within a conductor. Co-based amorphous wire was used as a sensor head. The wire has almost 0 magneto-striction and high permeability. An uniform magnetic field was applied to 1mm thick copper plate and $25{\mu}m$ thick aluminum sheet conductor using spiral typed coil The size of the coil has $40mm{\times}40mm$ outer width and $8mm{\times}8mm$ inner width. The copper plate and aluminum sheet has 0.5mm and 0.1mm wide gap, respectively. The frequency range of applied field was 100kHz-600kHz. The induced voltage difference of 2.5mV was obtained in the maximum voltage and minimum one measured across the gap of the 1mm thick conductor. In the case of aluminum sheet, 0.4mV was obtained. From this results, the effectiveness of Co-based amorphous wire was confirmed in the ECT technique.

High temperature superconductors can only be applied against an engineering specification that has to be determined for each particular application form the design requirements for economic viability and for operation margins in service. However, in order to realize the HTS transformer, it is necessary to establish the high voltage insulation technique in cryogenic temperature. Therefore, the composite insulation of double pancake coil type transformer are described and ac breakdown voltage characteristics of liquid nitrogen($LN_{2}$) under HITS pancake coil electrode made by Bi-2223/Ag are studied. Breakdown in $LN_{2}$ is dominated electrode shape and distance. And we investigated AC breakdown properties of $LN_{2}$ and complex conition of cryogenic gaseous nitrogen($CGN_{2}$) obove a $LN_{2}$ surface. Also, the surface voltage of GFRP was measured as a function of thickness and electrode distance in $LN_{2}$ and complex condition of $CGN_{2}$ above a $LN_{2}$ surface. This research presented information of electrical insulation design for double pancake coil type HTS transformer.

For the experiment the four types of spacer were distinguished by arrangement. The flashover characteristic on each types of spacer was investigated and the flashover phenomena were observed to understand breakdown mechanism in liquid nitrogen($LN_{2}$). The spacer should be placed interior coil as an insulator, a cooling channel and s supporter of structures. The simulated electrode used in the experiment was made from five turns of HTS tape. Experimental results revealed that multi-layer and barrier effects did work well in Air but did not in $LN_{2}$. These result suggested that the flashover in LN2 caused by the bubbles due to partial discharge at micro gap, g. The flashover characteristics decreased to 70% when g is 0.2 mm. The degradation was improved by even treatment on surface of coil electrode.

According to the increasing power demand for the future construction of many underground cables will be required. However, construction of new ducts for power cables will be more difficult. Therefore, research work for realizing the high temperature superconducting(HTS) cable has advanced, where the development of electrical insulating system at cryogenic temperature is one of the major researches. For an electrical insulation design of HTS cable, it is important to understand not only breakdown but also partial discharge and dielectric loss($tan{\delta}$) in liquid nitrogen/paper composite insulation system. In this paper, we investigated breakdown characteristics in liquid nitrogen/paper composite insulation system for the application to HTS cable. And, we studied the breakdown characteristics of the multi-layer and butt gap of the insulation papers in liquid nitrogen. Also, we measured dielectric loss($tan{\delta}$) of the mini-model Cable made of TERLAM IPP.

The conventional thermal insulator and power transformer testing is widely used in surface aging measurement of outside insulator because those testing can carry out very short time in Lab testing. Also thermal testing is able to offer the standard judgement of relative degradation level of outside HV machine. There it is very useful method compare to previous conventional thermal testing method and effective Lab testing method. But surface discharges(SD) have very complex characteristics of discharge pattern so it is required estimation research to development of precise analysis method. In recent, the study of IRR-camera is carrying out discover of temperature of power equipment through condition diagnosis and system development of degradation diagnosis. In this study, thermal testing of power transformer is measured with partial temperature distribution in real time.

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

In this study, a single phase driven piezoelectric motor design is presented for linear motion-metal/ ceramics composite structure. Using ANSYS finite element analysis software, mode shape of free motor was obtained to clarify the working principle of this motor. And characteristics of the motor was measured. The motor is composed of a piezoelectric ceramic, a metal ring which has 4 arms, and a guider. The motor with 25.0[mm] diameter was studied by finite element analysis and experimentation too. As a result, the motor was expressed the best speed in resonance frequency. And according as voltage of the motor increase, the speed increased by ratio.

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

Hot wall epitaxy 방법을 이용하여 chalcopyrite 구조를 가진 고품질의 $AgInS_{2}$ 박막을 성장 하였다. 광전류 스펙트럼을 측정한 결과， 30K에서 300K까지는 단지 A 와 B 두개의 봉우리가 관측되었고 반면에 10K에서는 A,B,C 세 개의 봉우리가 관측되었다. 이때 이들 봉우리들은 band-to-band 전이에 기인하는 것으로 관측되었다. 광전류 측정으로부터 $AgInS_{2}$의 가전자대 갈라짐이 측정되었고 이로부터 10k에서 결정장에 의한 갈라짐 $D_{cr}$과 스핀궤도에 의한 갈라짐 $D_{so}$은 각각 0.150eV와 0.009eV로 관측되었다. 또한 에너지 밴드갭의 온도 의존성 $E_{g}(T)$에 대하여 연구하였고 성장된 $AgInS_{2}$ 박막의 에너지 밴드갭은 1.868eV 임을 알았다.

$CdGaInS_{4}:Er^{3+}$ single crystal crystallized in the rhombohedral. with lattice constants a = 3.899 $\AA$ and c = 36.970 $\AA$ for $CdGaInS_{4}:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of this compound had a direct and indirect band gaps. the direct and indirect energy gaps are found to be 2.665 and 2.479eV for $CdGaInS_{4}:Er^{3+}$ at 10 K. The photoluminescence spectra of $CdGaInS_{4}:Er^{3+}$ measured in the wavelength ranges of 500 nm~900 nm and 1500~1600 nm at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of 549.5~560.0nm. 661.3~676.5nm. 811.1~ 834.1 nm and 1528.2~1556.0 nm in $CdGaInS_{4}:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$ symmetry of the $CdGaInS_4$ single crystals host lattice.

Abstract We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

In this paper, we investigated the fault current limiting characteristic of flux-lock type High-Tc superconducting fault current limiter(HTSC-FCL), which is comprised of a flux-lock reactor and an external magnetic field coil covering the HTSC element In this HTSC-FCL, the initial limiting current level can be controlled by adjusting the inductance of the each coil. Furthermore, the fault current limiting characteristics of HTSC-FCL can be improved by applying 'the external magnetic field into the HTSC element We performed the computer simulation by numerical analysis about the flux-lock type HTSC-FCL and compared the results of experiment with simulation ones. We can obtain the same results from both the computer simulation and the experiment except for the time immediately after fault occurs.

The standard capacitor must have not only precise value of the capacitance but also the basic properties of low dielectric loss tangent. In the reforming process of capacitors, the dielectric loss tangent must be also reformed. In this paper, the development of standard capacitors of 10 and 100pF for the dielectric loss tangent standard using $Al_{2}O_{3}$ Crystal and the measurement of dielectric loss tangent are discussed. The dielectric loss tangent depends upon the surface between electrode and dielectric in capacitor. With using the Electric Field Simulator, precise design values of electrode are simulated. For the purpose of measuring capacitance effect just in the dielectric, 3-Terminal and 4-Terminal Pair configuration are applied respectively at the electrode and the connector for the measuring equipment. As stated above method, the standard capacitors of 10 and l00pF for the establishment of the dielectric loss tangent standard using the $Al_{2}O_{3}$ Crystal are made with low dielectric loss tangent less than 10-4.

This paper presented the results of evaluation of artificially contaminated suspension insulators for transmission lines. The suspension insulators were contaminated with kaolin and clay which were included various amount of natural salt. The degree of contamination were evaluated by measuring equivalent salt deposit density(ESDD). Then, the leakage currents were measured as a function of applied voltage, degree of contamination, humidity.

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

In this paper, the $CF_{4}$ decomposition rate are investigated for a simulated three plasma reactors which are metal particle reactor, spiral wire reactor and reactor with porous dielectric as applied voltage. The $CF_{4}$ decomposition rate by plasma reactor with porous dielectric had a gain of 20~25[%] over that by plasma reactor with spiral wire or metal particle electrode. The $CF_{4}$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_{4}$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. However, decomposition efficiency is more than 90% in case of the reactor with porous dielectric. we think, the reactor with porous dielectric should be much better than other reactors for $CF_{4}$ decomposition.

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : $Cl_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained $r_m$ values were smaller than $0.1\Omega$ at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below $0.2\Omega$.

This paper describes an influence of system voltage harmonics on arrester deterioration diagnostic techniques based on leakage current measurement because the resistive current is composed of two components caused by nonlinear characteristics of arrester and by system voltage harmonics. Resistive leakage currents of arresters, which can be evaluated by the third harmonic component of total leakage currents, increase with its deterioration progress. In this paper, we developed a PSpice model for ZnO arrester to simulate the harmonics' effect described above. In simulation, pure sinusoidal voltage and the $3^{rd}$ harmonic voltage are applied to the model, and the leakage current changes are compared. The simulation results showed that the magnitudes of resistive leakage current depend not only on the phase of system voltage harmonics but also on the magnitude of it.

In this study, 2-2 type piezocomposites were made and characteristics as volume fraction of PZT were investigated. The accoustic impedance of 2-2 piezoelectric composites was linearly decreased with decreasing PZT volume fraction. when the volume fraction of PZT was 0.2 the acoustic impedance was 3.2 Mrayl. The electromechanical coupling factor was favourable in comparison with the single phase PZT, and that was about uniformed about 0.68 in the 0.2 to 0.6 of PZT volume fraction.