An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

RAINBOW(Reduced And Internally Biased Oxide Wafers) are a new class of high-displacement, piezoelectric actuator produced by selectively removing oxygen from one surface of ceramic using a high-temperature chemical reduction process. In this paper, RAINBOW composition of 0.4Pb$(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$ were prepared. Its dielectric and piezoelectric properties were investigated in the vicinity of MPB. The strain - electric field characteristics of RAINBOW actuator were significantly improved comparison with the conventional bulk actuator.

A coupler is a microwave passive component used for power coupling or dividing. Regarding the trend of current telecommunication systems it is highly desirable for monolithic integration of passive components as such LTCC(Low temperature cofired ceramics) technology offers potential advantage in size, cost and performance. Utilizing LTCC technology a 2012 size type dual band coupler for DCS and EGSM band was fabricated. Its characteristics such as coupling, insertion loss, isolation and directivity was measured and compared with simulation results

유전체가 삽입된 공동 공진기는 유전체에 대부분의 전자계가 집속되어 있기 때문에, 도체 손실이 매우 적고 높은 Q값과 온도 안정성이 뛰어나다. 동일한 주파수에서 동작하는 다른 필터에 비해 상대적으로 작기 때문에 소형화에도 적합하다. 본 논문에서는 유전체가 삽입된 공동 공진기의 전자기 분포와 특성을 수치해석과 HFSS(High Frequency Structure Simulator)를 이용하여 분석하였고 이 결과를 토대로 HFSS를 이용한 순차적 방법을 도입하여 4-pole 이중모드 대역통과 필터를 설계, 제작하였다.

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

Ni 내부전극을 적용한 X7R의 온도특성을 가지는 고압용 적층 칩 캐패시터를 설계, 제작하였으며 제작된 캐패시터 신뢰성을 검토하였다. 고압용 캐패시터 설계시 절연파괴전압과 유전체 두께간의 최적의 두께가 있음을 볼 수 있으며 그린시트 두께 24 um의 경우 weibull 계수는 13.38, 단위 절연파괴전압은 70 [V/um]을 얻을 수 있었다. X7R 3216, 100 [nF] 정격전압 250[V] 캐패시터를 설계하여 절연파괴전압은 최고 1.29 [KV]인 고압용 칩 캐패시터를 제작하였다. 적층 칩 캐패시터 절연파괴 모드는 유전체 층간의 절연파괴와 더불어 내부전극과 외부 전극 또는 세라믹 소체와의 절연파괴 모드가 나타남을 볼 수 있다.

In this study, lead-free piezoelectric ceramics were investigated for pressure sensor applications as a function of the amount of $CeO_2$ addition at Bi(Na,K)$TiO_3-SrTiO_3$ system. With increasing the amount of $CeO_2$ addition, the density and dielectric constant increased. Electromechanical coupling factor($k_p$) showed the maximum value(kp, 0.39) at 0.1wt% $CeO_2$ addition and decreased above 0.1wt% $CeO_2$ addition., Density, dielectric constant(${\varepsilon}_r$) increased but mechanical quality factor(Qm), piezoelectric constant(d33) decreased in $CeO_2$ addition, respectively.

We have explained Process and electrical characteristics of a step-down Rosen type piezoelectric transformer for AC-adapter. When the electric voltage is applied to the driving piezoelectric vibrator notarized in the thickness direction, then output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. Output voltage and current from a single-layered piezoelectric transformer were measured under the various condition of loads and frequencies It was shown from experiments that output voltage has increased and resonance frequency has changed according to various resistor loads. Output current has decreased inversely proportional to the loads

Nowadays, the study on the ceramic components and modules using LTCC is being peformed and on the passives included in modules is being done also. Especillay frequency dependent components like capacitor and inductor are studied by many groups, but the behavior of embedded resistor in MCM-C module are not studied vigorously. The characteristics of embedded resistor in modules is different from that of resistor alone. In our research, behavior of embedded resistor is examined in the variation of position and geometrical parameters.

ZnO varistor ceramics were fabricated with variation of addition of $Nd_2O_3$ amount and the sintering temperature was $l150^{/circ}C$. The average grain sizes were showed decreased from $13.8{\mu}m$ to $4.7{\mu}m$, and varistor voltages were increased from 398 V to 657 V by added amount of $Nd_2O_3$. Nonlinear coefficient a of all were with increasing the amount of $Nd_2O_3$ more than 60, in case of added on 0.1mol% $Nd_2O_3$ was 87. And leakage current were less than $1_{\mu}A$ with applied at 82% of varistor voltage. The clamping voltage ratio of the specimes added 0.1mol% $Nd_2O_3$ was 1.38 at applied 25A [$8/20{\mu}s$]. In the specimen added 0.1mol% $Nd_2O_3$, endurence of surge current and deviation of varistor voltage were 7000A/$cm^2$, $\Delta-2.08%$, respectively.

The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

[ $Ba(Zn_{1/3}Nb_{2/3})O_3$ ] (BZN) 세라믹스의 소결 온도는 약 $1350^{\circ}C$ 이다. 그러나 $B_2O_3$가 첨가된 경우, BZN 세라믹스는 $900^{\circ}C$에서 소결되었다. $BaB_4O_7$, $BaB_2O_4$ 그리고 $BaNb_2O_6$ 이차상이 $B_2O_3$가 첨가된 BZN 세라믹스에서 관찰되었다. $BaB_4O_7$과 $BaB_2O_4$ 이차상은 약 $900^{\circ}C$에서 공정 온도를 가지기 때문에 $B_2O_3$를 첨가한 BZN 세라믹스론 $900^{\circ}C$에서 소결하는 동안 액상으로 존재할 것으로 여겨지며, 그것이 BZN 세라믹스의 소결온도를 낮출 것으로 생각된다. 소결 온도의 증가에 따라 유전 상수 ($\varepsilon_r$)와 품질 계수 ($Q{\times}f$)의 값은 증가하였는데, 이는 밀도의 증가에 기인한다. 그러나 $B_2O_3$의 첨가량이 많은 경우 Q 값은 감소하는데, 이는 이차상의 존재가 품질계수의 저하를 초래한다고 생각된다. 2.0 mol% $B_2O_3$가 첨가된 BZN 세라믹스를 $950^{\circ}C$에서 2시간 동안 소결하는 경우, $Q{\times}f$=13.600 GHz, $\varepsilon_r$=37.6 그리고 공진 주파수 온도계수 ($\tau_f$) = 19 ppm/$^{\circ}C$의 유전특성을 얻을 수 있었다.

The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.

본 논문에서는 진화 전략 알고리즘(Evolution Strategy Algorithm)를 이용한 L1B4 선형 초음파 모터(L1B4-USM)의 최적 설계 기법을 제시하고자 한다. 유한요소법(Finite Element Method)을 정식화 하였고, 2차원 유한요소법을 L1B4-USM의 임피던스와 모드의 해석을 통해 검증 하였다. 검증된 2차원 유한 요소 해석을 통한 선형 초음파 모터의 임피던스 해석, mode 해석 및 최적 모드의 탐색 프로그램, 자동 요소분할 프로그램 그리고 진화 전략 알고리즘을 수행하였다. 이를 통해 선형 초음파 모터의 L1모드, B4 모드 각각이 발생하는 공진주파수를 일치시키며, 최대 속도를 얻기 위한 최적 설계기법을 완성 하였고, 최적화된 형상의 L1B4-USM를 설계하였다.

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

Transducer for linear ultrasonic motor with symmetric and anil anti-symmetric modes was studied. The transducer was composed of two Langevin-type vibrators that cross at right angles with each other at tip. In order to excite two vibration modes, two Langevin-type vibrators must have 90-degree phase difference with each other. As a result, tip of transducers moves in elliptical motion. Elliptical trajectoric of transducer was analyzed by employing the finite element method. From these results, the ultrasonic motor was fabricated and was measured for characteristics. In this paper compared an ANSYS analysis with an experiment results. The no-road maximum speed was 113.1[cm/s].

The method that exists in Photodynamic Therapy uses Photosensibility drug strongly Influencing tumour accumulation together with photochemical laser effect and makes the structure of tumour be localized and become extinct. The intracavity transformation of the Nd :YAP main radiation 1079 nm was Raman converted in barium nitrate crystal and the Stokes frequency (1216 nm) was doubled using KTP or RTA crystals. The LiF or Cr:YAG crystals are used for the Q-switch. The radiation Parameters were obtained at 100 Hz pump repetition frequency. The average power at 608 nm radiation with LiF and KTP was 700 mW at multi-mode generation. The 3-6 single 10-15 ns pulses were generated during one cycle of pumping. The doubling efficiency with RTA was two times more than with KTP. The cells of Ehrlich adenocarcinoma (0.1 ml) were i.m. implanted in hind thighs of ICR white non-imbred mice. The cells were preliminarily diluted in medium 199 in the ratio of 1 to 5. HpD was intravenous administered in a dose of 10 mg/kg. The left clean-shaven hind leg was irradiated with laser light 21-27 hours after the administration of the preparation. The right non-Irradiated leg of each animal served as a control. The animals with the transplanted tumor that were not injected with HpD sewed as a control to estimate the complex effect (HpD+ irradiation). Before the administration of HpD and on 3 and 4 days after irradiation the tumor size was measured and the percent of the tumor growth inhibition was calculated. The results of animal treatments has shown high efficiency of PDT method for cancer treatment by means 0.608 m high power pulse solid state laser.

페로브스카이트 구조를 가지는 $CaZrO_3$ 유전체 세라믹스에 $CaTiO_3$를 부피 비율로 첨가하여 첨가량 변동에 따른 마이크로파 유전 특성을 조사하였다. 또한 저온 동시소성 기능성 LTCC 기판용 유전체 소재로서 활용하기 위하여 저융점의 borosilicate계 유리 프리트를 첨가하여 $CaZrO_3-CaTiO_3$ 복합 유전체 세라믹스의 저온 소결 거동과 마이크로파 유전 특성을 평가하였다. 알칼리가 첨가된 저융점의 borosilicate계 유리 프리트를 $10\sim30$ wt% 범위로 첨가함으로서 $CaZrO_3-CaTiO_3$ 복합 유전체 세라믹스의 소결온도를 $1450^{\circ}C$에서 $900^{\circ}C$이하로 낮출 수 있었으며, 유리 프리트의 첨가량으로 공진 주파수 온도계수 특성을 조절할 수 있었다. 유리 프리트의 첨가량이 15 wt% 첨가시 $875^{\circ}C$에서 충분한 소결이 이루어졌으며, 이 경우 $CaZrO_3-CaTiO_3$ 복합 유전체 세라믹스는 유전율(k) 23, 품질계수(Qxf) 2500, 공진 주파수 온도계수 ($\tau_{cf}$) -3 ppm/$^{\circ}C$의 매우 양호한 마이크로파 유전 특성을 나타내었다. 유리 프리트의 첨가에 의하여 소결 과정에서 주상인 $CaZrO_3$가 $CaZr_4O_9$ 상으로의 변화가 뚜렷이 나타났는데, 이러한 상전이 현상과 함께 미세구조의 변화에 대해서도 고찰하였다.

[ $Ta_2O_5$ ]가 첨가된 $Ba(Zn_{1/3}Ta_{2/3})O_3$[BZT] 세라믹은 1:2 규칙화 정도가 증가하고 $Ba_3Ta_5O_{15}의 이차상이 새롭게 형성된다. $1580^{\circ}C$ 보다 높은 온도에서 소결된 BZT 세라믹은 $Ta_2O_5$를 첨가하면 입자의 성장이 일어나고 액상이 형성된다. 품질계수(Q) 값은 $1580^{\circ}C$ 보다 높은 온도에서 소결할 경우 미량의 $Ta_2O_5$ 첨가만으로도 상당히 증가한다. 상대밀도는 $Ta_2O_5$ 첨가량에 따라 감소하기 때문에 Q값의 증가는 상대밀도와는 무관하다. 반면에, $Ta_2O_5$의 첨가량에 따라 입자의 성장은 증가하였기 때문에 Q값의 향상은 입자크기와 관계가 있음을 알 수 있다. 많은 양의 $Ta_2O_5$ 첨가시 비록 입자 크기가 증가했음에도 불구하고 Q값이 매우 낮은 것을 볼 때, Q값의 감소는 $Ba_3Ta_5O_{15}$ 상의 영향과 낮은 밀도 값에 기인한 것이다.

RF 시스템에서 발룬(Balun)은 회로기판과 집적회로 사이의 임피던스 매칭에 사용되는 소자로서, 전력의 균등한 분배와 함께 180도 위상차를 만드는 역할을 하는 주요 회로부품이다. 시스템의 요구사양에 따라 balanced 임피던스가 $50\Omega$인 소자뿐만 아니라, 25 또는 100, $200\Omega$인 소자들도 많이 사용되는데, 대부분의 계측기가 $50\Omega$을 I/O 임피던스로 설정하고 있어, balanced 임피던스가 $50\Omega$이 아닌 경우 특성을 측정하기 위해서는 별도의 지그설계가 필요하다. 본 연구에서는 중심주파수가 900MHz이고, balanced 임피던스가 $100\Omega$이며, LTCC 모듈 내에 내장되는 임베디드 발룬의 최적 평가를 위한 PCB 측정지그의 구조에 대하여 설계 및 시뮬레이션을 실시하고, 이에 따라 제작된 지그를 시뮬레이션 결과와 비교하였다. 지그를 구성하는 마이크로스트림의 임피던스를 조절함으로써 유효한 측정주파수범위를 넓힐 수 있었으며, 제작된 지그는 설계치에 거의 근접한 전송특성을 나타내었다.

Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

RF MEMS is a miniature device or an array of integration devices and mechanical components and fabricated with If batch-processing techniques. RF MEMS application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF MEMS switches have been developed for the application to the milimeter wave system. RF MEMS switches offer a substantilly higher performance than PM diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool. And stress and distribution are simulated.

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively

The microwave dielectric properties of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics prepared by conventional mixed oxide method and sintered at $1400^{\circ}C-1450^{\circ}C$. According to X-ray diffraction patterns of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ phase were showed. Porosity of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics were reduced with increasing sintering temperature, but the bulk density was increased. In the case of $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics sintered at $1425^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF) were 13.69, 63,754GHz and -29.37 $ppm/^{\circ}C$, respectively.

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

The dielectric properties of PZT(4060)/(6040) multilayered thin films with substrate temperature were investigated. PZT(4060)/(6040) thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with different substrate temperature of $200{\sim}700^{\circ}C$. Increasing the substrate temperature, perovskite structure was increased, and PZT (001), (110), (002), (200) peaks were increased. The relative dielectric constant and dielectric loss of PZT(4060)/(6040) multilayered thin films at the substrate temperature of $700^{\circ}C$ were 843 and 2.45, respectively at 1000(Hz).

This paper presents design and analysis of multi-layered ring-dot type piezoelectric transformer. These transformers are useful for step up and step down. The transformers consist of disk type multi-layered piezoelectric ceramic plates. The finite element method(FEM) was used for analysis transformer. Vibration mode, electric field and equivalent elastic strain of piezoelectric transformer were simulated by changing frequency. As results, the strain was distributed in isolation part entirely. We can get the operated in step up transformer when the inner side electrode using by input parts. Also we can get the step down transformers using by input Part as outer side electrode. The step up ratio and step down ratio was increased by decreasing inner side electrode. The resonance frequency was increased by increasing inner side electrode when the transformer was operated in step down transformer. But the step up one was decreased. From these results, we can expect to multi-layered ring-dot type piezo transformers as step up and step down transformers.

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

[ $BaO-Sm_2O_3-4TiO_2$ ] 세라믹을 LTCC용 재료로 사용하기 위해 $B_2O_3$와 CuO를 소결조제로 첨가하여 소결온도를 낮추었다. 10.0 mol%의 $B_2O_3$만을 첨가하였을 경우 $1000^{\circ}C$에서 2시간 소결시 er=72.23, Qf=4,050GHz, ${\tau}f=-0.574ppm/^{\circ}C$의 우수한 유전 특성값을 얻을 수 있었지만, $960^{\circ}C$이하에서는 소결이 잘 이루어지지 않았다. $B_2O_3$와 CuO를 동시에 소결조제로 첨가하였을 경우에는 $900^{\circ}C$에서 2시간 소결시 10.0 mol% $B_2O_3$, 15.0 mol% CuO의 첨가조성에서 ${\varepsilon}r$=70.09, Qf=4,728GHz의 우수한 유전특성을 보여 고유전율을 가진 저온 동시 소결용 재료로서의 가능성을 보여주었다. 이처럼 BaO-$Sm_2O_3-4TiO_2$ 세라믹의 소결온도를 낮출 수 있었던 요인은 소결온도보다 용융점이 낮은 2차상들이 액상을 형성하여 액상소결이 진행되었기 때문이며 이때 소결에 기여한 이차상들은 결정화되지 못하고 비정질 상태로 남아있는 것으로 추정된다.

일반적으로 적층형 압전 액츄에이터의 변위는 액츄에이터의 내부 적층수와 압전정수($d_{33}$)에 비례적으로 증가한다. 그러나 압전현상을 이용한 액츄에이터는 전기적, 기계적 부하에 의한 dipole 거동을 보이기 때문에 domain wall에 의한 압전정수의 비선형 거동을 보인다. 본 논문에서는 PMN-PZ-PT 세라믹스를 이용하여 $2{\times}3{\times}10$ (mm)의 적층형 세라믹 액츄에이터를 제조 후 1kV/mm의 일정한 전계를 인가하고 $0\sim990N$의 기계적 부하 인가하에서 적층형 세라믹 액츄에이터의 비선형 특성을 조사하였다. 압전 액츄에이터의 비선형 거동은 기계적 응력에 의한 유전 및 전왜 특성에 영향주고, 액츄에이터의 변위 특성은 유전 및 전왜 특성의 영향에 크게 의존한다.

In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.

The SBT$(Sr_{0.8}Bi_{2.4}Ta_2O_9)$ thin films for semiconductor device were deposited on Pt-coated $Pt/TiO_2/SiO_2Si$ wafer by RF magnetron sputtering method at $400[^{\circ}C]$ and annealed at the temperature range from $600[^{\circ}C]$ to $850[^{\circ}C]$. The top electrodes(Pt) were deposited on SBT thin film by DC sputtering method. The crystallinity of SBT thin films were increased with increase of annealing temperature in the temperature range of $600[{\circ}C]\sim850[^{\circ}C]$. The annealing temperature properties were to be most excellent in the case of annealed SBT thin film at $750^{\circ}C]$. And, the maximum remanent polarization$(2P_r)$ and the coercive electric field$(E_c)$ at annealing temperature of $750[^{\circ}C]$ obtained about $11.60[{\mu}C/cm^2]$ and 48[kV/cm], respectively. Specially, it was seen that fatigue properties does not change in $10^{10}$ switching cycle.

압전 외팔보의 구조가 갈수록 복잡해짐에 따라 더 정확하고 효과적인 압전체의 해석이 요구되어지고 있다. 본 논문에서는 3차원 직육면체요소를 이용한 유한요소법을 통해 압전 변환기를 해석하고, 이것을 실험적으로 검증함으로써, 3차원 유한요소법을 이용한 해석 프로그램의 타당성을 확인하였다. 또한 3차원 유한요소법을 이용해서 압전 외팔보를 해석하고, 이것을 실험 결과를 통해서 검증하였다. 그리고 압전 외팔보를 팬으로 적용하기 위해서 끝단에서의 최대 변위와 EMCF(Electo-Mechanical Coupling Factor)를 목적함수로 한 진화 전략 알고리즘을 적용하였다. 이를 통해서 팬용 압전 외팔보의 최적 설계를 수행하였다.

In this study, the foot-spa driving circuit using ultrasonic vibrator was manufactured The used ultrasonic vibrator was PSN-PMN-PZT ceramic with the radius of $25{\Phi}$ and the thickness of 2, 2.5, 3, 3.5 and 4mm, respectively. Resonent frequency for driving ultrasonic vibrator at the fabricated circuit was generated using the self exciting and the external exciting methods. Fabricated foot-spa showed the best condition at the resonent frequency of 1.130MHz and the ceramic thickness of 2.0mm. That is, when the foot-spa was operated for 360 min. at $0.5\ell$ water, temperature increase of water was $14^{\circ}C$ at the self exciting method and $16^{\circ}C$ at the external exciting methods, respectively.

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

알루미노 보로실리케이트계 유리 기본조성 중 알칼리 토류 산화물의 종류 및 함량 변화에 따른 저유전율/저 LTCC 배선 기판의 저온 소성 거동 및 유전 특성을 조사하였다 알칼리 토류 산화물의 종류 및 함량 변화를 통해서 LTCC의 적정 소성온도인 $875^{\circ}C$ 부근을 포함하는 넓은 대역으로 소성수축이 시작되는 온도를 제어할 수 있었으며 유리 프리트와 알루미나 필러의 배합 비율의 변화에 따른 소성거동 및 유전특성의 변화 거동을 조사하였다. 알칼리 토류 산화물 중 유리 조성내의 CaO의 함량이 증가할수록 유리전이점 및 연화점을 증가하는 경향을 보였으며, 알루미나 필러의 첨가량이 증가할수록 소성수축이 시작되는 온도영역은 상향되고 유전율 및 품질계수는 증가하였다. 알칼리 토류 산화물의 조성과 필러인 알루미나의 함량을 제어함으로서 $875^{\circ}C$에서 18% 이상의 선수축율과 유전율 $5.1\sim5.5$ 및 유전손실 0.1% 이하의 우수한 특성을 갖는 저온소결용 LTCC 배선 기판을 얻을 수 있었다.

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

Voltage step-down characteristics in Ring/Dot type piezoelectric transformer were examined as a function of the area of input electrode when the area of output electrode is fixed. The effects of driving frequency and load resistance on the voltage step-down characteristics were also examined. Voltage gain was greatly dependent on the driving frequency and load resistance, and showed a maximum gain at resonance frequency of the step-down transformer. The frequency where the maximum output voltage appears increased about 0.2% as the load resistance increased from 10 to $150\Omega$. As the area of input electrode increased, the voltage gain and the efficiency of the transformer increased. Frequency dependence of efficiency of the step-down transformer revealed a similar tendency with the voltage gain curves. The maximum efficiency remarked 94% when the input voltage and the load resistance were 20 $V_{PP}$ and $120\Omega$, respectively.

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of hi content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562{\AA}/min$ and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was Proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

An ultrasonic linear motor was composed af a slider and a stator vibrator including piezoelectric material and elastic material. The ultrasonic linear motors mainly consist of an ultrasonic vibrator which generates elliptical oscillations. $L_1-B4$ ultrasonic linear motor use longitudinal and bending multi-vibration. In order to design stators which has high efficiency and diriving characteristics. The finite element method was used to optimize dimension of ultrasonic vibrator and direction of vibratory displacement. stator vibrator of respectively width 3, 5, 7[mm] was fabricated an experimented. as results When width was 5[mm], the driving characteristics was good

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

The microwave dielectric properties and their related structural characteristics in solid solutions of (1-x) $Ba(Mg_{1/3}Nb_{2/3})O_3$ -x $La(Mg_{2/3}Nb_{1/3})O_3$ (BLMN) have been investigated by measuring the dielectric constant${\varepsilon}r)$, Q value and temperature coefficient of resonant frequency$({\tau}f)$ and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant$({\varepsilon}r)$ showed maximum value at the composition which corresponds to the phase boundary between 1:2 ordered and 1:1 ordered structure. The increase in ${\varepsilon}_r$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency${{\tau}_f)$ was investigated in terms of oxygen octahedra tilting.

[ $0.96[Bio_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%MnO_2$ ], were studied in order to develope the superior dielectric and piezoelectric properties of Lead-free Piezoelectric ceramics. With increasing amount of $MnO_2$ addition, density showed the maximum value of $5.79[gcm^3$] at 0.1wt% $MnO_2$ addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 161 at 0.3wt% $MnO_2$ addition.

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

최근 전자 부품으로써 널리 사용되는 압전 변압기근 고전계 구동시 야기되는 압전체의 기계적인 진동 손실 및 유전 손실에 의해 높은 온도 상승이 초래된다. 이는 압전 변압기의 동작 특성 변화를 일으키며 결국 안전 변압기의 공진 주파수의 변화 및 효율의 감소 등 비선형성의 원인이 된다. 본 논문에서는 유한 요소법을 이용한 압전 변압기의 공진 특성을 해석하였으며 이를 이용하여 압전 변압기의 기계저인 진동 손실 및 유전 손실을 계산하였다. 또한 유한 요소법을 이용한 3차원 열전달 방정식의 해석을 이용하여 암전 변압기의 온도 분포를 해석하였으며 이를 실험적으로 검증하였다.

Shaking beam을 이용한 초음파 선형모터는 모터 구동부에서 발생하는 타원궤적이 선형 slider 와 마찰이 되어 선형운동을 발생시킨다. 이러한 초음파 선형모터에서 설계변수는 모터의 효율과 추력(thrust force) 등 동특성을 결정한다. 특히 초음파 모터 동작부의 tip 과 선형 slider 의 contact point와 압착은 모터의 속도, 추력 동작 주파수, 효율에 직접적인 영향을 주는 중요한 parameter 로 작용된다. 본 연구에서는 모터와 선형 slider 의 압착과 contact point둥의 설계변수가 초음파 선형 모터의 성능에 주는 영향을 고찰하였다. 모터으구동부와 선형 slider 사이의 압착력 ($10N{\sim}50N$)과 4가지 곡률을 갖는 tip을 설계변수로 취하였다. Tip 의 형태에 따른 곡률과 모터 구동부와 선형 slider 사이의 압착력 변화에 따른 모터의 동작특성이 변화되는 것을 확인할 수 있었다.

최근에 위성용 필터로서 유전체 공진기 내장 도파관 필터가 많이 연구되고 있다. 이 필터의 튜닝을 위하여 튜닝 스크류가 일반적으로 사용되어져 왔는데 튜닝 스크류의 사용은 복잡한 필터의 튜닝 시 너무 소모적인 작업을 야기시키고 미세한 튜닝에 어려움이 있어서 다른 해결책을 필요로 한다. 또한 제품의 사용 시에는 온도등의 외부환경의 변화에 대하여 대처를 하기 위하여 전기적인 튜닝을 이용한 튜닝의 자동화에 대한 필요성이 대두되었다. 이에 대한 해결책으로 BST($Ba_xSr_{1-x}TiO_3$)라는 강유전체를 이용하는 튜닝에 대하여 소개하고 한 경우에 대하여 FDTD 방시의 EM 시뮬레이션을 구하여 그 결과로서 전기저인 필터 튜닝의 가능성을 보여준다.

This study was to measure the minuteness structure, dielectric properties of (0.3-x)PMN - XPSS-0.7PZT+0.5wt%NiO+0.5wt%$MnO_2$(x=0.05, 0.10, 0.15, 0.20, 0.25)ceramics according to sintering temperature and PSS moi percentage after manufacturing the specimens with a general method. the results of this study were gotten such as follows. The crystal structure of ceramic has the rombohedral structure in XRD. it appeared that addition of Ni, Mn additive was helpful to the formation of stable structure. Dielectric constant at $20^{\circ}C$ showed its maximum value 890.001 in specimens sintered at $1000^{\circ}C$, x=0.15mol. and dielectric loss showed its minimum value 6.95[%] in specimens sintered at $1000^{\circ}$, x=0.05mol. The variation rate of dielectric constant according to the change of frequency was decreased by increasing frequency, The variation rate of dielectric constant according to the change of temperature was increased by increasing temperature.

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

본 논문에서는 $B_2O_3$ 첨가가 Ba$(Mg_{1/3}Ta_{2/3})O_3$ (BMT)의 유전특성 및 미세구조의 변화에 미치는 영향에 대해 연구하였다 $B_2O_3$가 소량 첨가되었을 때는 결정립의 성장을 야기하여 치밀한 미세구조를 보였지만, 다량이 첨가된 경우 비정상 결정립 성장을 야기하여 치밀화가 떨어지는 미세구조를 보임과 동시에 $Ba_3Ta_5O_{15}$의 2차상을 형성했다. 이는 소량의 $B_2O_3$ 첨가가 유전특성의 향상을 가져왔지만, 다량의 첨가는 오히려 특성의 악화를 가져온 결과의 원인이라 생각된다. 0.5mol%의 $B_2O_3$를 첨가하여 $1500^{\circ}C$에서 6시간 소결한 경우 ${{\varepsilon}_r}=24$, $Q{\times}f=210,000GHz$의 유전 특성 값과 $4.74ppm/^{\circ}C$의 $T_{cf}$ 값을 얻었다.

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

본 논문에서는 유한요소법과 등가회로법을 이용하여 윤곽 진동형 압전변압기의 특성을 해석하고 이를 통해 압전변압기의 매칭 임피던스와 기계 및 전기적 결합계수를 계산하였다. 실험적 결과를 통하여 수치해석의 타당성을 검증한 후, 진화 전략에 기초한 멀티 모드 함수의 최적 알고리즘을 이용하여 고효율 고전압 밀도 압전 변압기의 형상 최적화를 수행하였다. 최적화 과정에서의 계산 시간을 단축시키기 위하여 AWE(Asymptotic Waveform Evaluation)를 적용한 유한요소법을 사용하였다.

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

이중의 망간 perovskite 블록을 가진 Ruddlesden-Popper 상(R-P phase) $Sr_3Mn_2O_7$ 은 공기중에서 불안정하다. 본 연구에서는 망간 이온 자리에 철 이온을 소량 치환 함으로써 R-P 상을 안정화 시켰으며 이들의 결정구조는 X-선회절 데이터를 이용하여 Rietveld 법으로 정밀화하였다. 안정화에 필요한 Fe 이온의 양은 약 x=0.15로 나타났으며 Fe이온의 양이 증가함에 따라 쉽게 안정화 되었다. 자화율 측정결과 x=0.20 시료는 120K에서 paramgnetic-antiferromagnetic 전이를 나타내었고 이 전이 온도는 치환되는 Fe이온의 양이 증가함에 따라 감소하는 경향을 나타내었다.

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

In this study, in order to develop low temperature sintering ultrasonic vibrator, PCW-PMN-PZT ceramics with the amount of $Nb_2O_5$ addition were manufactured. All of the fabricated sample showed pure pervoskite structure of tetragonal phase. With increasing the amount of $Nb_2O_5$ addition, mechanical quality factor Qm were increased up to 0.2wt%$Nb_2O_5$ addition and then decreased. And also, with increasing the amount of $Nb_2O_5$ addition, grain size, kp, density and dielectric constant were linearly decreased. At the 0.2wt% $Nb_2O_5$ addition composition ceramic, kp of 0.48, Qm of 2186, ${\varepsilon}r$ of 1219 were shown, respectively. Their values were suitable for ultrasonic vibrator application.

압전 액츄에이터는 다른 종류의 액츄에이터와 비교할 때 높은 강성, 빠른 응답성의 우수한 특성을 가지고 있다. 벤더형 액츄에이터는 높은 변위의 장점을 가지나 높은 전기장과 기계적 부하인가시에는 내부 응력이 증가하므로서 신뢰성이 감소한다는 단점을 가지고 있다. 이러한 단점을 보완하기 위하여 여러 방법으로 내부 응력을 줄이려는 시도가 있으며 그중 하나는 경사기능 소재나 경사기능 구조를 가지는 액츄에이터의 개발이다. 본 연구에서는 경사기능 특성을 모사한 액츄에이터 구조를 제작하고 그 특성을 조사하였다. 두 가지의 압전상수 d31= - 220 pC/N, d31 =- 100 pC/N를 가지는 세라믹층을 적층하여 벤더형 액츄에이터의 특성을 관찰하였다. 그 결과 두 종류의 세라믹층으로 적층한 액츄에이터가 한가지 특성의 세라믹으로 제작한 액츄에이터 보다 전압인가시 20%이상의 우수한 변위 특성을 나타내었다. 이러한 변화는 내부 응력의 감소에 기인한 것으로 예상된다.

본 연구에서는 MEMS 공정에 의해 제작된 실리콘 멤브레인 위에 스크린 프린팅법을 이용하여 압전 후막을 제작, 그 특성을 관찰하였다. 실리콘 웨이퍼의 후면을 각각 다른 4가지의 크기로 식각하여 멤브레인을 제작하였다. 제작된 멤브레인 위에 하부전극 Ag-Pd를 스크린 프린팅법으로 형성하고, 그 위에 압전 후막을 스크린 프린팅하여 열처리 하였다. 제작된 압전 후막위에 MFM(Metal-Ferroelectric-Metal)구조의 액츄에이터를 제작하기위해 상부전극으로 Pt를 스퍼터링으로 증착하였다. 제작된 마이크로 액츄에이터는 SEM(Scanning Electron Microscope)으로 구조분석하고, RT66A와 MTI2000으로 동작특성을 해석 하였다.

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

Unipoled piezoelectric transformers were designed with different input and output area ratios. The voltage step-up ratio increased proportionally with increasing the input area. The piezoelectric transformers operated in each transformer's resonance vibration mode. In this paper, ANSYS(FEM program) was used for analysing piezoelectric transformers. We compared with analysis and experimental results. The voltage step-up ratio showed maximum value in output area of small size. Output characteristics of piezoelectric transformers with various size were simulated. The result of analysis showed $2\sim7$ times higher voltage step-up ratio than a experiment result.

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PMN-PZT ceramcis using $Li_2CO_3$ and $Bi_2O_3$ as sintering aids were manufactured, and their microstructural, dielectric and piezoelectric properties were investigated. The sintering aids were proved to lower the sintering temperature of piezoelectric ceramics due to the effect of $LiBiO_2$ liquid phase. At 0.1wt% $Li_2CO_3$ added specimen sintered at $970[^{\circ}C]$, electromechanical coupling factor(Kp), mechanical quality factor(Qm) and dielectric constant showed the optimum values of 0.50, 2,413 and 1,245, respectively, for multilayer piezoelectric transformer application.

휴대폰이나 PDA등의 카메라 렌즈구동용으로 탑재 가능한 소형 압전 초음파 리니어 모터를 개발하였다. 선형 동작을 위한 구동력은 압전 세라믹과 1개 또는 2개의 세라믹으로 이루어진 uni- 또는 bimorph 형태의 압전 엑츄에이터에서 얻을 수 있다. 즉 초음파 영역의 펄스형태의 전압을 인가함으로써 정 또는 역의선형 운동과 인가하는 전압의 주기에 따라 정밀한 위치조절이 가능하고 제조공정이 용이하고 구조가 간단한 것을 특징으로 하는 모터이다. 본 연구에서는 소형 압전 초음파 리니어 모터의 원리와 동작특성을 고찰하였다.

Voltage step-down characteristics of Ring/Dot type piezoelectric transformer were examined with increasing input voltage from $10\;V_{pp}$ to $140V_{pp}$. Then the output load resistance was fixed to $125\;\Omega$. The voltage gain showed constant value till the input voltage of $70\;V_{pp}$. And then it linearly decreased till the input voltage of $140V_{pp}$. The output voltage of fabricated piezoelectric transformer increased with increasing input voltage. And driving frequencies when the output voltage was maximum value were changed according to input voltage. Frequency shifts and temperature rise of fabricated sample showed 2 kHz, $13^{\circ}C$, respectively when input voltage was changed from $10\;V_{pp}$ to $140V_{pp}$. Because of the temperature rise of fabricated piezoelectric transformer, the step-down characteristics of it was deteriorated above the input voltage of $70\;V_{pp}$.

BST thin films were etched with inductively coupled $CF_4(C1_2+Ar)$ Plasmas. The maximum etch rate of the BST thin films was 53.6 nm/min for a 10 % $CF_4$ to the $Cl_2/Ar$ gas mixture at RF power of 700 W, DC bias of -150 V, and chamber pressure of 2 Pa. Small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. Consequently, the increased chemical effect caused the increase in the etch rate of the BST thin films. To clarify the etching mechanism, the surface reaction of the BST thin films was investigated by X-ray photoelectron spectroscopy.

[ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.

Ternary tellurite glassy systems $(CuO-V_2O_5-TeO_2)$ have been synthesised using tellurium oxide as a network former and copper oxide as network modifier. The addition of a transition-matal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $CuO-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity ( up to $6.03{\times}10^{-3}S/cm$) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

High throughput analysis using a DNA chip microarray is powerful tool in the post genome era. Less labor-intensive and lower cost-performance is required. Thus, this paper aims to develop the multi-channel type label-free DNA chip and detect SNP (Single nucleotide polymorphisms). At first, we fabricated a high integrated type DNA chip array by lithography technology. Various probe DNAs were immobilized on the microelectrode array. We succeeded to discriminate of DNA hybridization between target DNA and mismatched DNA on microarray after immobilization of a various probe DNA and hybridization of label-free target DNA on the electrodes simultaneously. This method is based on redox of an electrochemical ligand.

Indium tin oxide (ITO) thin films on polymeric substrates such as acryl (AC), Poly carbornate (PC), polypropylene (PP), and polyethlene terephthalate (PET) have been deposited by a do reactive magnetron sputtering without heat treatments. Sputtering parameters is an important factor for high Qualify of ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results the surface roughness of ITO films becomes rough as the oxygen partial pressure Increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 80%.

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current (MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

본 연구에서는 Ta이 도핑된 $TiO_2$와 $Au/TiO_2$ nanocomposite 박막을 co-sputtering법으로 제작하였다. Ta-doped $TiO_2$ 박막은 금흥석(rutile)에서 아나타제 상으로 변하는 구조를 유도하는 고용체를 형성했다. $Au/TiO_2$ nanocomposite film의 경우에는, 지름이 약 15 nm인 Au particles들이 $TiO_2$ matrix에 균질하게 분포되었다. Ta가 도핑된 $TiO_2$ 전극과 $Au/TiO_2$ 나노 콤포사이트 전극의 anodic photocurrents가 UV뿐만 아니라 가시광선 영역에서도 관찰되었다. Ta이 도핑된 $TiO_2$ 전극과 $Au/TiO_2$ 나노 콤포사이트 사이의 가시광선 영역에서 photoresponse는 계면 상태로 부터의 bandgap의 감소와 전자의 photoexcitation 때문이다.

열 진공 증착법(thermal vacuum evaporation)에 의해 p-형 열전박막을 $3{\times}10^{-4}{\sim}3{\times}10^{-6}$ Torr의 범위에서 유리 기판 위에 제조하였다. 제조된 박막의 전기저항은 고진공일수록 저항이 증가하였으며, $Bi_2Te_3$와 $Sb_2Te_3$상을 가지고 있었다. 박막의 조성은 기판의 위치에 따라 변화하였고, 원자 번호가 작을수록 위치의 영향이 크고, 반대로 원자번호가 큰 원소는 그 영향이 작았다. 또한 고진공에서 제조된 박막일수록 상대적으로 저진공에 비해 조성의 변화가 적게 나타났다.

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

We carried out this subject to observe electrochemical properties of 1,2-dioleoyl-sn- glycero-3-phosphocholine(DOPC) mixed with fatty acid containing azobenzene group by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode in $NaClO_4$ solution. We investigated the photoisomerization and electrochemical property of the organic ultra thin film of fatty acid containing azobenzene was prepared on the hydrophilic ITO(idium tin oxide) glass plate by LB method. As a result, the absorption spectra of BASH and DOPC of mixture LB films was induced to photoisomerization by alternating irradiation of ultraviolet and visible light. A measuring range was reduced from initial potential to -1350mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rate were 50, 100, 150 and 200 mV/s. As a results, LB films of BASH-DMPC appeared reversible process caused by the reduction-oxidation current from the cyclic voltammogram.

When it converted solar energy or light energy into chemical energy, it studied the electric charge transfer property of the viologen which is used widely as the electron acceptor for the electric charge delivery mediation of the devices. It was formed monolayer in QCM by self-assembled viologen. The absorbed quantities of viologen's electron through peak current and to analyze the electron transfer property of viologen in redox reaction made experiments in cyclic voltammetry among the electrochemical process. It studied the electron transfer relation of viologen from changing the anion in 0.1M NaCl and $NaClO_4$ electrolyte and the interrelation between scan rate and peak current when scan rate increased twice.

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

격자전극을 가진 질화탄소막을 이용하여 새로운 습도센서를 개발하였다. 결정성 질화탄소막의 감습 특성을 조사하고, 광범위한 상대습도($10%\sim90%$)에 대해 민감한 임피던스와 커패시턴스 의존도를 보였다. 특히 격자전극은 습기의 자유로운 흡 탈착을 용이 하게 하여 센서의 히스테리시스를 줄였다. 또한, 질화탄소막은 물리, 화학적으로 안정한 물질이므로 고온, 고습 및 화학적으로 열악한 환경 속에서도 뛰어난 특성 을 나타내었다.

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

Sodum bismuth titanate $(Na_{0.5}Bi_{0.5}TiO_3$ or NBT) thin films coated on the $LaNiO_3$ (LNO) electrode by sol-gel methode and rapid thermal annealing (RTA) technique. The NBT (NBT/LNO/Si) thin films examined by x-ray diffraction (XRD). The orientation of NBT was observed for films coated at $900^{\circ}C$, 5 min and $600^{\circ}C$, 60 min. Filed emission scanning electron microscopy (FE-SEM) showed uniform surface composed of grains. The grain size of NBT thin films increased with increasing annealing temperature.

[ $ZnCr_2O_4$ ]를 모물질로 하고 MgO, $TiO_2$를 몰비로 2:1, 4:1, 6:1, 및 8:1이 되게 정량적으로 조합한 후, 조사하였다. $ZnCr_2O_4$-MgO와 $ZnCr_2O_4-TiO_2$를 X-선 분석한 결과 Spinel 결정구조를 형성하였으며, 또한 SEM과 EDX 분석결과 각각 $Li_2CrO_4$와 $Li_3VO_4$의 형성으로 인하여 저항 특성이 나타나는 것을 알 수 있었다. $ZnCr_2O_4-MgO$, $ZnCr_2O_4-TiO_2$에서 MgO의 양이 증가할수록 저항값은 약간 감소하는 반면, $TiO_2$의 양이 증가할수록 저항값이 급격히 증가하는 특성을 나타내었고, 감습 특성에서도 M??보다 TiO2가 더 높게 나타내었다. 습에 따른 복원 특성의 경우 $700^{\circ}C$에서 소결한 ($ZnCr_2O_4:MgO=4:1$)과 ($ZnCr_2O_4:TiO_2=6:1$) 조성의 센서가 가장 양호하였다.

A heart diagnosis system adopts Superconducting Quantum Interface Device(SQUID) sensors for precision MCG signal acquisitions. Such system is composed of hundreds of sensors, requiring fast signal sampling and precise analog-digital conversions(ADC). Our development of hardware board, processing 64-channel 12-bit 1ks/s, is built by using 8-channel ADC chips, 8-bit microprocessors, SPI interfaces, and parallel data transfers between microprocessors to meet the 1ks/s, i.e. 1 ms speed. The test result shows that the signal acquisition is done in 168 usuc which is much shorter than the required 1 ms period. This hardware will be extended to 256 channel data acquisition to be used for the diagnosis system.

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

This paper studied about the (100) orientation of PZT thin films coated on the LNO electrode using a different thermal annealing. The thermal annealing method is divided into two things. The one is the method transferring heat to only the lower substrate and another is transferring heat to all directions. Orientation factor of PZT in the method of transferring heat to only the lower substrate was F=99% in the thermal annealing of the LNO. Orientation factor of PZT was F=67% in the method of transferring heat to all directions.

We have investgated on the monolayer LB film of BASH-DMPC mixture on an ITO for the photoisomerization by light irradiation. We measured electrochemical properties by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode in $NaClO_4$ solution at a variable concentration and monolayer LB films. A measuring range was reduced from initial potential to -1350mV, continuously oxidized to 1650 mV and measured to the initial point. The scan rate were 50, 100, 150 and 200 mV/s. As a results, LB films of 8A5H-DMPC appeared reversible process caused by the reduction-oxidation current from the cyclic voltammogram.

본 논문에서는 혈당측정기 제작에 있어 PDMS(Su-8)를 이용하였다. 이는 일종의 고분자로서 기계적 특성이 우수하고 제작이 간단하며, 가격이 저렴하고 다른 물질과의 접합이 용이하다. 혈액의 펌핑과 믹싱을 할 수 있도록 새로운 구조체를 설계하였으며 제안된 모델의 핵심 부분인 측정전극의 제작에 필요한 기초적인 실험을 수행하였다. 측정전극의 성능향상과 제작편의성, 저가격화를 위해 효소고정화방법으로 Electrospinning (전기방사)으로 제조된 PVA nanofiber web을 이용하였으며, 이는 중합도 Pn=1700, 비누화도 98%인 공업용으로 상용화된 값싼 제품이다. 따라서 이를 이용하면 측정용 전극의 효소고정화에 있어 저가격화를 이룰 수 있을 것으로 기대된다 고정화된 전극분석을 위해 SEM(주사전자현미경)과 NMR(핵자기공명분광계), FT-IR(적외선분광분석)장비를 사용하였다. 그리고 기존의 효소고정화법(전기중합법)과의 응답특성을 비교분석하였다.

Due to the increasing variety and capacity of information and communication media, systems of microwave band communication have branched out extensively. Surface acoustic wave (SAW) devices fabricated FeSiB thin films on quartz substrate were deposited by RF magnetron sputter and by photolithographic processes. This device is with a center frequency 146MHz and the insertion loss as low as -43dB was obtained.

In this work, carbon nanofibers have synthesized a low temperature using DC Ar Plasma and Fe-Phthalocyanine, and a characteristic difference of the synthesized CNF according to the location of the substrate was investigated. the density of CNFs synthesized on the position (a) were higher than that synthesized on the position (b) [See the Fig. 1]. Also, the length of CNFs was different. In the shape, CNFs with screw and straight line shape were synthesized in the position (a), but only CNFs with straight line shape were synthesized in the position (b). The difference have an important effect on the field emission characteristics.

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

We have investigated to observe the photoisomerization using the mixture solutions in chloroform and LB monolayers mixed with DPPA and BASH containing azobenzene group which has reversible to cis-trans by light irradiation.. Spreading solutions for the LB films were Prepared in chloroform($5.0{\times}10^{-5}mol/L$). We investigated the photoisomerization and property of the organic ultra thin film of fatty acid containing azobenzene was Prepared on the glass plate by LB method. As a result, the absorption spectra of 8A5H and DPPA mixture of LB films was induced to photoisomerization by alternating irradiation of ultraviolet and visible light, because the condensation of pure azobenzene monolayers was loosened by the introduction of phospholipid into the monolayers, and the molecular high aggregation in pure azobenzene monolayers is also weakened by the introduction of phospholipid. We found that it was reversibly induced to cis-trans photoisomerization in a various mixture molar ratio.

[ $ZnCr_2O_4$ ]에 $Li_2CO_3$를 $5{\sim}30wt%$ 범위에서 정량적으로 첨가한 감습재료에서 screen printing법으로 알루미나 기판 위에 후막으로 인쇄하고 $650\sim750^{\circ}C$에서 소결하여 후막 습도센서를 제작하였으며, $30\sim90%RH$ 범위에서 상대습도에 따른 저항 및 정전용량 특성을 조사하였다. $ZnCr_2O_4$에 $Li_2CO_3$가 5wt%가 첨가된 조성의 센서는 70%RH이상에서, 25wt%이상 첨가된 조성의 센서는 40%RH이하에서 저항 및 정전용량이 급격히 변화하는 switching 현상을 나타내었다. 반면, $ZnCr_2O_4$에 $Li_2CO_3$가 15wt%가 첨가된 조성의 센서는 선형적으로 저항은 감소하였고, 정전용량은 증가하였다.

본 논문에서는 DLC(Diamond-like Carbon) 박막과 기판 사이에 금속층을 포함하는 DLC 박막의 기계적 특성을 분석하였다. 금속층은 sputtering법을 사용하고, DLC 박막은 PECVD법을 사용하여 각각 중착하였다. 티타늄(Ti), 니켄(Ni), 크롬(Cr)을 각 중간 금속층으로 사용한 후 DLC 박막과 실리콘(Si) 기판 간의 기계적 특성을 분석하였다. 각 막의 두께는 FE-SEM으로 확인하였고, DLC 박막의 구조 평가는 Raman spectrometer를 사용하여 분석하였으며, 각 금속층과 DLC 박막의 표면 상태는 AFM을 이용하여 확인하였다. XRD 분석을 통하여 박막의 격자분석을 하였고, SIMS(secondary ion mass spectrometry) 분석을 통하여 DLC 박막의 depth Profile을 확인하였다.

The effects of conduction band offset on 2 dimensional electron gas (2DEG) in N-InAlAs(AlAsSb)/InGaAs/InAlAs (AlAsSb) metamorphic heterostructures (MMHS) are studied. A combination of the Shubnikov-deHaas oscillations and the Hall measurements is used to investigate the electron transport properties of these structures. The mobility in the second subband is higher than that in the first subband in all heterostructures. This is attributed to the fact that electrons in the first subband we, on average, closer to the interface and are therefore scattered more strongly by ionized impurities. The results suggest that intersubband scattering rate is more dominant in structures with higher conduction band offset whereas alloy scattering is found to be more dominant in the higher band offset system.

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. In this paper the effect of doping amounts of $Al_2O_3$ on the electrical, optical and morphological properties were investigated experimentally, The results show that the structural and electrical properties of the film are highly affected by the doping. The optimum growth conditions were obtained for films doped with 2 wt% of Al203 which exhibit a resistivity of $8.5{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 91.7 % for 840 nm in film thickness in the wavelength range of the visible spectrum.

The results of numerous studies in III-V semiconductors show that sulfur treatment improves the electrical parameters of III-V compound devices. In this article, we examine the effects of sulfidation of HgCdTe surface on the interfacial characteristics of metal-ZnS-HgCdTe structures. Different from sulfidation in III-V material, S can not be act as an impurity because II-S compounds (ZnS, CdS) generally used as passivant for HgCdTe. Our studies of sulfur-treatment on HgCdTe surface show that sulfur agent forms the S- S, II-S bonds at the surface layer. These bonds are very effective to improve the electrical properties of ZnS layer on HgCdTe by reducing the possibility of native oxides formation. After the sulfidation process, MIS capacitors of HgCdTe show great improvement in electrical properties, such as low density of fixed charge and reduced hystereisis width.

본 논문에서는 저가 고효율 태양전지를 제작하기 위하여 p형 다결정 실리콘 기판을 사용하여 수산화 칼륨(KOH)이 포함된 용액에 Saw damage 과정 후 불산이 함유된 용액에 전기화학적 양극산화 과정으로 실리콘 웨이퍼 표면에 요철을 형성하여 다공성 실리콘을 형성 하였다. 본 논문은 전기화학적 에칭방법으로 기존의 진공장비로 제작된 반사방지막의 반사율만큼 감소된 다공성 실리콘 반사방지막을 형성하였다. 전자빔 증착기(e-beam evaporator)로 단층으로 형성된 $TiO_2$의 반사방지막은 400-1000 nm의 파장 범위에서 4.1 %의 평균 반사율을 가졌으며, 양극산화과정으로 형성된 다공성 실리콘은 400-1000 nm의 파장의 범위에서 4.4 %의 평균 반사율을 가졌다. 본 연구는 태양전지의 반사방지막 형성을 기존의 제작 방법보다 간단하고 저렴한 방법으로 접근하여 태양전지의 변환효율을 상승하는데 목적을 두었다.

유기 발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)N,N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidineltris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 시간에 따른 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압의 시간에 따른 EL(electro luminance)을 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.

PEMBE(plasma enhanced molecular beam epitaxy)방법으로 성장된 GaN 박막의 초기 거동현상을 실시간 X-선 산란을 이용하여 관찰하였다. 표면이 원자 계단(atomic step)을 이루고 있는 사파이어 기판 위에 성장하는 GaN 박막은 layer-by-layer 모드로 성장 후 3D 모드로 성장을 하였다. 거친 표면을 가진 사파이어 기판 위에 성장하는 GaN 박막은 성장 초기는 표면을 평평하게 만든 후, 3D 모드로 성장하였다. 플라즈마로 생성된 이온화된 질소는 표면의 에너지를 변화시켜 GaN 박막의 증착을 증진시키고, 표면의 coverage를 증가시킨다.

파장다중분할 방식의 광통신소자는 단일파장 뿐만 아니라 이웃하는 여러 파장대에서도 동작 할 수 있는 유연성을 갖는 소자가 요구된다. 이를 해결하는 하나의 방법이 파장제어(다중채널)광자결정(Photonic crystal)소자이다. 본 연구에서는 결함층으로 광자결정체 배열구조를 가지는 다중주기 일차원광자결정을 이용하므로 투과광 파장제어가 가능한 가변형 다중채널 투과필터를 얻을 수 있는 이론적 모델과 그에 따라 제작된 $Si/SI_)2$의 광자결정체를 제작하고 그 특성을 고찰하였다. 반사밴드 갭내에 생성된 다중투과-dip의 파장 위치는 이론값과 정착하게 일치하였다. 특히, 결함층 수(N)에 따라 광자 에너지갭내에 2N개의 투과-dip 모드를 생성할 수 있으며, 이들은 주파수범위에 대해 대칭 분포됨을 알 수 있다. 여기에 제안하는 다중채널 투과필터는 외부 전원 없이 입사각도를 미세 조절하므로 파장을 tuning할 수 있다.

ZnO, $SnO_2$ 타겟 각각의 RF 파워를 50 W, 38 W로 고정시킨 후 combinatorial RF magnetron sputtering법을 사용하여 기판 위치에 따라서 조성 구배를 주어 여러 가지 조성의 Zn-Sn-O(ZTO) 박막을 제작하였다. 시편의 열처리에 따른 물성 변화를 분석하기 위해 Rapid Thermal Annealer(RTA)을 이용하여 450, $650{^\circ}C$의 온도 및 $10^{-2}$ Ton의 진공 분위기에서 각각 1 시간 동안 열처리하였다. XRD 분석 결과 상온에서 제작된 ZTO 박막은 Sn 18 at%의 조성을 갖는 시편을 제외하고 모두 비정질상으로 나타났다. $450^{\circ}C$에서 열처리 후 구조적인 변화는 보이지 않았으나, 캐리어 농도와 이동도는 증가하였으며 Sn 54 at%의 조성에서 최고 $25.4cm^2/Vsec$의 전자 이동도를 나타내었다. $26{\leq}Sn$ $at%{\leq}65$의 조성 범위를 갖는 박막은 가시광 영역에서 80 % 이상의 투과도를 가졌으며 $650^{\circ}C$에서 결정화가 되면서 투과도가 증가하였다.

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

We investigated the electro-optical(EO) performances of the super twisted nematic liquid crystal display(STN-LCD) on the polyimide(PI) surface with polymer film using rubbing and photoalignment method. Monodomain alignment of the plastic STN-LCD can be observed. A faster response time for the photoaligned plastic STN-LCD on the polyimide(PI) surfaces can be achieved than rubbingaligned plastic STN-LCD.

High quality GaN layer and $In_xGa_{1-x}N$ alloy were obtained on (0001)sapphire substrate using ammonia$(NH_3)$ and dimethylhydrazine$(DMH_y)$ as a nitrogen source by gas source molecular hem epitaxy(GSMBE) respectively. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN and $In_xGa_{1-x}N$. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from Plane of GaN has exhibitted as narrow as 8 arcmin. Photoluminescence measurement of GaN and $In_xGa_{1-x}N$ were investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. In content of $In_xGa_{1-x}N$ epitaxial layer according to growth condition was investigated.

We investigate the influence of the New Electron Injection Layers (EIL) on the performance of the Alkali Metal Complex vapor-deposited Organic Light Emitting Diodes(OLED). Two different Alkali Metal Complex were used; Lithium Quinolate (Liq), and Sodium Quinolate (Naq). In all cases, $Alq_3$ was the Electron Transporting Layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics. We concluded that the turn-on voltage, and luminance efficiency are controlled by the type of EIL material used. We show the longer life-time OLED with Alkali Metal Complex EIL than OLED with LiF EIL. And we show the Optimized Alkali Metal Complex thickness is 3nm. Existent LiF to because is inorganic material, there is trouble to do epitaxy into thin layers but regulates the thickness in case of Alkali Metal Complex matter characteristic that is easy be. Alkali Metal Complex also appeared by sensitive thing in thickness than LiF If utilize this material, It is thought much advantages may be at common use of OLED.

본 연구에서는 PERC(passivated emitter and rear cell) 구조를 갖는 고효율 단결정 실리콘 태양전지에 도금법을 적용하여 Ni/Cu 전극을 형성하였다. 고효율 태양전지는 제작 비용이 높고 공정이 복잡하기 때문에 실용화에 적용이 어려운 단점이 있다. 따라서 태양전지의 효율은 그대로 유지하고, 공정을 간단하게 줄이면서 저가격화 할 수 있는 방법에 대한 연구가 필요하다. 기존의 고효율 실리콘 태양전지에 가장 일반적으로 적용되고 있는 Ti/Pd/Ag 전극의 경우 고가의 증착 장비를 이용할 뿐만 아니라 재료 자체도 매우 고가의 물질이 사용되고 있다. 도금법으로 Ni/cu 전극을 형성하여 태양전지를 제작한 결과 공정을 간소화하고 비용을 절감 하면서, 20% 이상의 고효율 태양전지를 얻을 수 있었다.

RF magnetron sputtering을 이용하여 증착한 투명전도성 ZnO 박막의 F 도핑량에 따른 전기, 구조, 광학적 특성에 대해 고찰하였다. 순수 ZnO와 ZnO : $ZnF_2$(1.3 wt%) 그리고 ZnO : $ZnF_2$(10 wt%) 3개의 타겟들을 2개씩 조합 각각의 rf 파워를 조절하여 co-sputtering 방법으로 $ZnF_2$ wt%를 변화시켜 박막내의 F 도핑량을 조절하였다. 증착된 박막들은 열처리에 따른 물성 변화를 분석하기 위해 $5{\times}10^{-7}$ torr 이하의 진공 분위기에서 $300^{\circ}C$에서 2 시간 동안 열처리하였다. XRD 분석 결과 제작된 모든 ZnO 박막은 (002) 우선 방위 특성을 보였고 F 도핑량 증가에 따라 (101), (110), (100) 방향의 약한 피크들이 나타났으며, 이러한 구조적 특성 변화는 이동도의 변화와 밀접한 관계가 있는 것으로 나타났다. Auger로 박막 내의 F 량을 분석한 결과 최대 5.9 at%의 F이 포함되어 있었으며, 열처리 후 캐리어 농도와 이동도는 증가하였고 최고 $37cm^2/Vs$의 이동도를 나타내었으며, 모든 박막들은 가시광 영역에서 81 % 이상의 투과도를 가졌다.

This paper investigates that how diffraction efficiency is going to change according to amorphous As-Ge-Se-S. We made films such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8$ on the basis of 633nm, which is wavelength of recording laser(He-Ne). Among them, $\lambda/4$ has the highest diffraction efficiency value, while $\lambda/8$ has the lowest. The experiment shows that the highest diffraction efficiency value of $\lambda/4$ is about 0.09%, whereas diffraction efficiency of $\lambda/8$ is formed, which is merely close to 0%.

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

공액계 유기가교로서 butadiene을 사용한 이핵 유기금속착체를 합성하였고, 합성된 유기금속착체 화합물에 대한 구조적 특징과 두 금속간의 전기화학적 특성에 관한 연구를 수행하였다. $[Cp*Fe(CO)_2]_2-({\mu}-CH=CH-CH=CH)$ 착체는 $Cp*(CO)_2$FeK와 cis-3,4-dichlorocyclobutene과의 반응으로 합성하였고, 이 착체에 결합된 CO기는 UV 광반응하에서 $PPh_3$로 치환시켜 $[Cp*Fe(CO(PPh)_3]_2-({\mu}-CH=CH-CH=CH)$를 합성하였다. 합성된 착체에 대한 전기화학적 특성을 파악하기 위해 CV 실험결과, 전위차 ${\Delta}E^{\circ}=0.575{\sim}0.605$ V이고 $K_c$값은 $109{\sim}1010$으로 매우 큰 값을 얻음으로서 두 금속간의 상호작용이 탄화수소사슬을 통해 활발하게 이루어지고 있음을 알수가 있었다.

ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

The improvement in OLEDS performance is correlated with the surface chemical composition, hole injection and electron injection. In this study, a new hole injection material, HIL202(NPB derivatives), was synthesized and the devices with the structure of ITO/HIL202/NPB/$Alq_3$/Liq/Al were fabricated. The devices with a new hole injection material showed the improved current density, luminance and life time then the NPB or conventional hole injection material based OLEDs, due to the improved adhesion morphology between ITO surface and hole injection material.

Many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescence(EL) devices, since the first report of the light-emitting diodes based on Alq3. BECCP[bis(3-N-ethylcarbazolyl)cyanoterephthalidene] is a new luminescent material having cyano as an electron acceptor part and carbazole moiety as an electron donor part. The BECCP material shows blue PL and EL spectra of the device at about 480nm and in the ITO/BECCP/Al device shows typical rectifying diode characteristics. We have introduced Alq3 between the electrode and BECCP, and obtained more intensive rectifying diode characteristics in forward and reverse bias.

The nitrogenated diamond-like carbon (NDLC) exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) films. These diamond-like transparent properties in NDLC come in a material consisting of $sp^2$-bonded carbon versus the $sp^3$-carbon of DLC. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. Liquid crystal (LC) alignment capabilities with ion beam exposure on NDLC thin films and electro-optical (EO) performances of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) with oblique ion beam exposure on the NDLC thin film surface were studied. An excellent uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin films was observed. In addition, it can be achieved that the good EO properties of the ion-beam-aligned TN-LCD. Finally, we will present the residual DC property of the ion-beam-aligned TN-LCD on the NDLC thin film surface.

미세 소자를 관측, 가공 및 분석하기 위해 사용되는 기존 광학현미경은 빛으로 물체를 관측하므로 대물렌즈 (Object lens)에서의 회절한계 때문에 분해능의 있으므로 매우 뽀족한 탐침(Probe)을 시료의 표면에 근접시킨 후 표면을 주사하여 이미지를 얻는 방법이 개발되어 최근에는 Optical Fiber를 이용하여 fiber 끝단을 nano-scale 정도로 첨예화시키는 기술이 개발되었다. 이러한 광섬유 탐침은 구경의 직경이 작을수록 높은 분해능을 얻을 수 있으므로 광섬유 탐침의 제작 공정 확립은 매우 중요하다. 그 중에서 대표적인 방법이 $CO_2$ 레이저를 이용하여 가열한 후 인장 하는 방법 (Heating and Pulling)이 있다. 그래서 본 연구에서는 $CO_2$ 레이저를 이용하여 100nm 정도의 팁 반경을 갖는 뽀족한 탐침을 제작하고자 한다.

The importance of display is becoming increasingly important due to the development of information and industry where it leads to diverse and abundant information in today's society. The demand and application range for FPD(Flat Panel Display), specifically represented by LCD(Liquid Crystal Display) and PDP(Plasma Display Panel), have been rapidly growing for its outstanding performance and convenience amongst many other forms of display. The current focus has been on OLED(Organic Light Emitting Diode) in the mobile form, which has just entered into mass production amid the different types of FPD. Many studies are being conducted in regards to device, vacuum evaporation, encapsulation, and drive circuits with the development of device as a matter of the utmost concern. This study develops a new type of light-emitting materials by synthesizing medical polymer organic chitosan and phosphor material CuS. Chitosan itself satisfies the Pool-Frenkel Effect, an I-V specific curve, with a thin film under $20{mu}m$, and demonstrates production possibility for a living body sensors solely with the thin film. Furthermore, it enables production possibility for EML of organic EL device(Emitting Layer) with liquid Green light emitting and Blue light emitting as a result of synthesis with phosphor material.

This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.

In this study, Tri(1-phenylpyrazolato)iridium $(Ir(ppz)_3)$ was prepared for the pure blue phosphorescent dopant and various host materials were used for the appropriate energy alignment. Although the luminance was pure blue with the CIE coordinates of x = 0.158, y = 0.139, device efficiencies didn't improve yet. Instead of finding the proper host materials, the alteration of structure of OLEDs affected the improvement of electrical and optical characteristics of the devices. It was worthy that insertion the exciton formation zone with the host material between the emitting zone and the exciton blocking layer. The device with a structure of ITO/NPB/Ir(ppz)3 doped in CBP/CBP for the exciton formation zone/BCP/Liq/Al was fabricated and the characteristics were observed compared with the devices without the exciton formation zone. When CBP was used for the exciton formation zone, the device efficiency reached to over 0.25 cd/A. While the device used CBP only for the host showed the luminous efficiency of under 0.11 cd/A

열 중착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 박막은 열처리를 하지 않은 경우와 열처리 조건을 $150^{\circ}C$ 로 후열(annealing) 처리 하는 방식으로 하였으며 후열 처리한 경우 $150^{\circ}C$에서의 열처리 지속 시간을 각각 2시간, 3시간, 4시간으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로파의 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 HOMO(highest occupied molecular orbital), LUMO(lowest unoccupied molecular orbital) 준위의 밴드갭의 shift 현상과 관련지어 설명하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 지속 시간에 따른 CuPc 박막의 전기전도도 특성은 2시간으로 지속한 경우의 박막의 경우 가장 좋았으며 그 보다 더 오랜 시간 동안 열처리를 지속한 경우에는 전기 전도 특성이 오히려 나빠짐을 알 수 있었다.

CuPc와 ZnPc를 이용하여 이종 접합 구조에서의 광기전 특성을 연구하였다. $CuPc/C_{60}$, $XnPc/C_{60}$의 이종 접합 구조에서 $C_{60}$의 접합 두께 비율을 1:1 (20nm:20nm), 1:2 (20nm:40nm), 1:3 (20nm:60nm)로 가변하여 두께와 물질에 따른 광기전 특성 및 엑시톤 억제층의 효과를 분석하였다. 광원은 500W Xe lamp를 이용하였으며, 광원의 세기는 보정된 radiometer/photometer와 Si-photodiode로 dark, 10, 25, 60, 80 그리고 100mW/$cm^2$로 주사하였다.

Zinc air batteries obtain their energy density advantage over the other batteries by utilizing ambient oxygen as the cathode materials, and reusing cathode as recycled form. And specific capacity of zinc powder is as high as 820mAh/g. Our research team succeeded in producing 2.4 Ah class zinc air battery for cellular phone application. In this paper we had studied performance of cathode according to various factors and demonstrated the performance of 2.4 Ah class zinc air battery for cellular phone application.

본 연구에서는 fiexible 기판에 e-beam으로 sio2를 증착 한 후 R.F 스퍼터링으로 ito 박막을 증착한 경우와 polyimide를 스핀 코팅한 후 ito를 증착한 경우로 나누어서 실험 하였다. SIO2 박막은 ITO증착을 위해 증착온도 $100^{\circ}C$에서 증착 하였으며 ITO 박막은 투과율을 향상 시키기 위해서 Ar/O2 혼합가스를 이용하였다. SIO2 와 ITO 박막의 두께는 각각 500nm, 200nm로 증착하였다. Stress 분포는 bending test를 통해 발생하는 island의 crackt 수로 측정 하였다. 그 결과 crack 분포는 buffer layer의 young's modulus 크기와 island density 영향이 지배적임을 확인 하였다.

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3$-$V_2O_5$. DTA, and XRD were used to characterize BaO-ZnO-$B_2O_3$-$V_2O_5$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA softening point of $460^{\circ}C$, and firing condition of $520^{\circ}C$, 20min

The paper presents the results of using the fundamental and the low frequency harmonic components of leakage current to study aging of EPDM insulator for contaminated condition by kaolin. The largeer the leakage current during 200ms, the higher harmonic component at 60hz. The harmonic component at 60hz and the odd order harmonics is increase relation without Kaolin Conent. Arcing on the surface was always associated with distortion in the leakage current; hence the low frequency components of the leakage currnent can be used as a means to evaluate the surface degration. Both the fundamental and 3rd & 5th harmonics increase dry-band activity.

A Study has been made of surface modification of various polymers by ion implantation to change the optical transmittance property at ultraviolet ray (UV, $200\sim400nm$). The substrates were PC (Polycarbonate), PET(Polyethyleneteraphtalate) and PP (Polypropylene). The effects of ion implantation on the change of optical transmittance were investigated in relation to ion species, implantation energies and ion fluences. The N, Ar, Kr, Xe ion implantation performed at ion energies from 20 to 50keV. The fluences ranged from $5\times10^{15}$ to $7\times10^{16}ions/cm^2$. UV/Vis transmittance spectroscopy, FT-IR and XPS were used to investigate optical transmittance, chemical structure and surface chemical state of irradiated polymer. Surface color was changed from the yellow to the dark brown and the transmittance of UV ray in the range UV-A($320\sim400nm$) decreased more than 80% after ion implantation.

This study reports on the pressure relief design and braided composite of surge arrester. Surge arresters with porcelain housing must not have explosive breakage of the housing to minimize damage to other equipment when subjected to internal high short circuit current. As a solution, this study describes pressure relief design performance of arresters with braided composite module. In general, braided composite has Potential for improved impact and delamination resistance. Manufacturing processes of the braided composite could also be automated and could potentially lead to lower costs. Therefore, in consideration of characteristics of pressure relief for polymer arrester, the fabric pattern of braided composite was decided. And Polymer arrester module was manufactured with braid. The mechanisms of pressure occurrence and relief were investigated basically by analyzing arc energy and the correlation between thermal shock and indoor pressure in pressure relief test.

This paper presents the method for analyzing surface temperature of Electric incoming Apparatus. For the experiment, the surface temperature of electric power apparatus was measured and analyzed by using a infrared thermal imaging system. Surface Discharges(SD) have very complex characteristics of discharge patterns, therefore it requires the development of precise analysis methods. recently, studies on infrared thermal imaging system are carried out to analyze temperature distribution of power equipments through condition diagnosis and to diagnose the degradation of power equipments. The changes in suface temperature was measured by using the infrared thermal imaging system under hot line condition. The system was set up based on the diagnostic method of the electric incoming apparatus.

경제적인 공정분석과 최적화를 위해서는 컴퓨터를 이용한 플라즈마 예측모델이 요구되고 있다. 본 연구에서는 일반화된 회귀 신경망 (GRNN)을 이용하여 플라즈마 증착공정 모델을 개발한다. GRNN의 예측성능은 패턴층 뉴런의 가우시안 함수를 구성하는 학습인자, 즉 spread에 의존한다. 종래의 모델에서는 모든 가우시안 함수의 spread가 동일한 값에서 최적화되었으며, 이로 인해 모델의 예측성능을 향상시키는 데에는 한계가 있었다. 본 연구에서는 유전자 알고리즘 (GA)를 이용하여 다변수 spread를 최적화하는 기법을 개발하였으며, 그 성능을 PECVD 공정에 의해 증착된 SiN 박막의 증착률에 적용하여 평가하였다. $2^{6-1}$ 부분인자 실험계획법에 의해 수집된 데이터를 이용하여 신경망을 학습하였고, 모델적합성 점검을 위해 별도의 12번의 실험을 수행하였다. 가우시안 함수의 spread는 0.2에서 2.0까지 0.2간격으로 증가시켰으며, 최적화한 GA-GRNN모델의 예측성능은 6.6 ${\AA}/min$이었다. 이는 종래의 방식으로 최적화한 모델의 예측성능 (13.5 ${\AA}/min$)과 비교하여 50.7% 향상된 예측성능이며, 이러한 향상은 제안한 GA-GRNN 모델이 플라즈마 공정 모델의 예측성능을 증진하는데 매우 효과적임을 보여준다.

Aging test to estimate life property of polymer insulator is executed through several international standard such as IEC 61109 and CEA tracking wheel test, but is not getting clear conclusion yet. There are two methods in the diagnosis method of polymer insulator such as off-line and on-line. The diagnosis methods in off-line are external condition analysis by the eye, contaminant analysis on surface, surface analysis, pollution withstand voltage test, power frequency flashover voltage test, lightning impulse flashover test, tensile fracture load test and flexural load test. The diagnosis methods in off-line most are the method for virgin and last aged sample. However, the diagnosis method in on-line is method that can be evaluate sample state as progressing continuously aging test in beginning, The diagnosis method in on-line is arranged as following: leakage current measurement, electric field, surface state investigation, thermal image, emitting light measurement and then so. In this paper, the tracking performance of polymer insulator with salt solution which is added surface active agent. The diagnosis of insulator sample has been analyzed by leakage current and visual examination.

This paper presents the temperature characteristics with structure of 18 kV lightning arresters for distribution. Three types of polymer arresters were fabricated and ceramic type arrester was also ready to investigate. Below $100^{\circ}C$, three types of polymer arresters exhibited almost the same leakage current value, but above $100^{\circ}C$, polymer arrester that arrester module was injected into polymer housing with grease exhibited the highest leakage current and the arrester with the lowest leakage current was the arrester that silicon rubber was directly injected to arrester module. The rising of leakage current of polymer arrester with grease was because of existing grease between FRP winding and silicon housing, and reducing the insulation characteristics of the grease. All polymer arresters exhibited the same temperature characteristics but ceramic typr arrester was slower than polymer arrester in heat emission despite lowest leakage current. It was thought that the air layer between ZnO varistor blocks and ceramic housing prevented the heat emission. However, in spite of the difference of the structure, the variation of the surface temperature of all arresters exhibited the same result.

반도체공정 최적화에 소요되는 시간과 경비를 줄이기 위해 신경망 모델이 개발되고 있다. 주로 역전파 신경망을 이용하여 모델이 개발되고 있으며, 본 연구에서는 Radial Basis Function Network (RBFN)을 이용하여 플라즈마 식각공정 모델을 개발한다. 실험데이터는 유도결합형 플라즈마를 이용한 Silicon Carbide 박막의 식각공정으로부터 수집되었다. 모델개발을 위해 $2^4$ 전인자 (full factorial) 실험계획법이 적용되었으며, 모델에 이용된 식각응답은 식각률과 atomic force microscopy로 측정한 식각표면 거칠기이다. 모델검증을 위해 추가적으로 16번의 실험을 수행하였다. RBFN의 예측성능은 세 학습인자, 즉 뉴런수, width, 초기 웨이트 분포 (initial weight distribution-IWD) 크기에 의해 결정된다. 본 연구에서는 각 학습인자의 영향을 최적화하였으며, IWD의 불규칙성을 고려하여 주어진 학습인자에 대해서 100개의 모델을 발생하고, 이중 최소의 IWD를 갖는 모델을 선택하였다. 최적화한 식각률과 표면거칠기 모델의 RMSE는 각기 26 nm/min과 0.103 nm이었다. 통계적인 회귀모델과 비교하여, 식각률과 표면거칠기 모델은 각기 52%와 24%의 향상된 예측정확도를 보였다. 이로써 RBFN이 플라즈마 공정을 효과적으로 모델링 할 수 있음을 확인하였다.

The main function of surge counter is knowing the times of surge flowed in, which is installed under surge arrester. Two methods are presented in this paper to get the electric power for mechanical movement and detect the surge with surge counter. One is using ZnO varistor resister and the other is using the current transformer.

고분자 재료에 이온을 주입하면 표면전기저항이 이온주입조건에 따라 $10^{16}\Omega/sq$ 에서 $10^7\Omega/sq$ 까지 변하게 되며, 광학적 특성도 변하게 된다. 이는 산업적으로 대전방지 등에 적용이 가능하며 이러한 신소재 개발을 위하여 산업용 이온빔 표면처리 장치를 제작하고 인출광학을 기초로 이온빔을 제어하여 고분자 재료의 이온주입처리 양산기술을 개발하였다. 본 연구에서는 대면적, 대전류 이온빔 인출을 위한 이온원의 광학적 설계 및 빔라인에서의 솔레노이드 전자석을 이용한 빔프로파일 제어방법을 설명하였다. 사용된 고분자 소재는 PC(PolyCarbonate) 및 PET(PolyEthylene Teraphthalate)이며, 질소이온주입조건은 이온에너지 40-50 keV, 이온주입량 $5\times10^{15}$, $1\times10^{16}$, $7\times10^{16}ions/cm^2$의 조건으로 공정을 수행하였다. 또한 대전방지용 고분자 대량생산을 위한 연속 생산조건과 양산공정조건에 따른 표면전기저항변화를 관찰하였다.

ZnO surge arresters continuously endure the operating voltages during the operation course, and in the mean time, which need to withstand occasionally transient voltages of lightning and switching overvoltages. Under these voltages, the ZnO varistors inside arresters would have aging phenomena, one important result of aging phenomena is the increasing of resistive currents of varistors, which leads to the increasing of power losses of varistors. And the operating voltage is continuously applied on the ZnO varistors, there is a degradation phenomenon existing in ZnO varistors. When the degradation reaches a certain degree, then the arrester must stop operation. The degradation is related to the applied voltage ratio, the applied voltage ratio is high, the degradation is quickly. When the power loss is higher than the thermal dispersion ability of house of arrester, then the arrester will thermally breakdown. In this study the thermal stability characteristics of surge arresters for high power wil be discussed on the view point of watt losses and thermal breakdown.

A new developed impulse current test system(100kV, 250kJ)is presented, which can carry out all impulse current and performance tests on surge arrester sections with rated voltage up to 12kV according to IEC 60099-4(2001). The maximum achievable peak value is 200kA for the impulse current $4/10{\mu}s$ and 60kA for the $30/80{\mu}s$ and $8/20{\mu}s$. The long duration current impulse is realized from class 1 to class 5. The digital transient recorder(4 channels 60MS/S 10bit) is used for measuring AC voltage, impulse current, reference voltage and leakage current. The complex control, measuring, evaluation and data storage system is controlled by one industrial PC system.

Diffusion coefficients Of electrons in $SF_6$-Ar mixtures gas used by MCS- BEq algorithm has been analysed over the E/N range $30\sim300$(Td) by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

During normal machine operation, partial discharge(PD) measurements were performed with turbine generator analyzer(TGA) in imitation stator winding of high voltage motors. The motor was energized to 4.47kV, 6.67, respectively. Applied voltage to Imitation winding was used two voltage level, 4.47[KV]and 6.67[KV]. Motors having imitation stator winding were installed with 80pF capacitive couplers at the terminal box Case of PD Pattern regarding applied voltage phase angel, the PD patterns were displayed two dimensional and three dimensional. TGA summarizes each plot with two quantities such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). As the result, we could discrimidate using TGA the difference of internal and surface discharge for imitation stator winding. We have used the other technique, in order to feature extraction of faulty signals on stator winding, Daubechies Discrete wavelet transform and Harmonics analysis(FFT) about faulty signals.

This paper presents structural characteristics of station class lightning arresters and electrical characteristics of manufactured ZnO varistor blocks which are usable in those arresters. Three types of station class lightning arresters were investigated and those are a ceramic arrester, a FRP tube type polymer arrester, and a FRP rod type polymer arrester. Each arrester has merits and demerits with structural characteristics. In general, polymer arresters were made of silicon rubber for housing materials, FRP tube or rod for mechanical strength, ZnO blocks for electrical characteristics, and metal parts for electrical contact and the silicon rubber, the housing materials, was directly injected to the arrester module which was assembly composed of electrodes, ZnO blocks and FRP tube or rod, and to prevent the nonlinear electric fields distribution on upper parts of arresters, the grade ring was adopted to the upper electrodes. The reference voltage, nonlinear coefficient, residual voltage, and voltage ratio of manufactured ZnO varistors are 4.90kV, 50, 9.54kV, 1.94, respectively. Compared to designed electrical characteristics, the reference voltage was low for 600v and the voltage ratio was slightly high. However, the characteristics of discharge withstand was so excellent that the mechanical destruction does not occur at the impulse current of $8/20{\mu}s$ 10kA for 100 times.

In oil-filled enuipment such as transformers, partial discharge or local overheating will precede a final shutdown. Accompanied with such problems is a decomposition of insulating material into gases, which are dissolved into the transformer oil. The gases dissolved in oil can be separated with some membranes based on the differences in permeability of membranes to different gases. This paper discuss the permeability characteristics of several membranes for separation hydrogen gas in oil. With result of this paper, it may become possible to detect fault-related gases from transformer oil and predict incipient failures in the future.

The leakage currents of transmission insulator were investigated as a function of environmental conditions, such as temperature, humidity, and rainfall. The insulators were artificially contaminated with insoluble yellow soil and kaolin which helped salt to stick on the surface of insulator. The insulators contaminated with the grade of B, C, and D were installed in the KoChang Testing Center. The leakage currents were measured and compared with non-contaminated insulators. The results indicated that the most important factor affecting leakage current was humidity. After heavy rain, the artificially contaminated salt was dissolved, resulting in similar characteristics between with and without contamination

Leakage current of the polymer arrester(42kV, 10kA, Class3) for railroad line applied actually field was observed and electrical characteristics of arrester before and after applied actually field were investigated. During applied actually field, leakage current of arresters were $610{\sim}647{\mu}A$ in AN SAN line and $500{\mu}A$ in YUNG DONG line. After applied actually field, electrical characteristics of arrester, such as insulation test, reference voltage test, leakage current test and partial discharge current test, wasn't variation as before applied actually field.

On-line partial discharge(PD) monitoring system has been developed to monitor in operating large motor stator insulations. This system makes use of remote diagnosis techniques for the evaluation of PD activity in the control center of thermal power plant. This system can be remotely accessed via a modem to build database, analyze status and interpret the pattern of PD activity. A personnel computer is generally connected to ten motors to continuous measurement of the PD activity. The test data can be easily interpreted by a maintenance staff. For assessing the condition of stator winding in motors, this system ensures a reliable measurement and accurate estimation. Capacitive couplers used for on-line PD measurement have been 80pF. The maximum PD magnitude(Qmax), PD pattern and normalized quantity number(NQN) were performed by this system.

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.

Degradation and insulation failure of traction motor depend on the continuous stress imposed on it. And knowing on insulation condition is important thing for safety operation of EMU(electric multiple unit). In this paper, PD(partial discharge) characteristics for degradation analysis of stator coil is studied. For PD data acquisition, two models are made; one is normal condition coil, the other is aged condition coil. And PD data for discrimination were acquired from PD detector. And these data making use of a computer-aided discharge analyser, statistical and other discharge parameters is calculated to discrimination between different discharge sources. And also these parameter is applied to classify PD sources by neural networks. Neural Networks has good recognition rate for degradation of stator coil.

In this paper we analyze the reflection characteristics of a dielectric microstrip line with an open-end termination containing optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in the laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated the transmission line model. To estimate theoretically the characteristic response of same systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time response in microwave systems have been calculated.

최근 항공우주산업을 비롯한 자동차, 선박, 철강, 건설, 전기, 국방, 금속산업 등 산업의 현장에서 첨단소재들을 널리 사용하고 있으며, 특히 비자성 금속재료에 대한 도전율 특성의 정밀분석이 요구되고 있다. 따라서 본 연구는 비자성 재료의 전기 도전율에 대해 널리 사용되고 있는 3가지의 측정방법을 통하여 정확한 측정과 함께 비교 분석하였으며, 이 측정 방법에 따라 평가된 도전율 측정결과는 0.5 %이내의 정확도에서 일치하고 있는 것으로 나타났다.

본 논문에서는 레이더(Radar)나 소나(Sonar) 시스템 등에서 중요하게 여겨왔던 신호의 방위각 추정기법들은 신호원의 수를 정확히 알아야 한다는 문제점이 있었다. 이러한 문제점들을 최근에는 빠른 수렴속도를 가지는 칼만 필터를 사용하여 신호원의 정보 없이 잡음 부공간을 성공적으로 추정하는 방법을 제안하게 되었는데 이 방법은 중간대 이상의 신호대 잡음비(SNR)가 유지되는 경우 신호의 정보 얼이 DOA를 추정할 수 있는 것으로 평가되어왔다. 그러나 이러한 알고리즘은 임펄스성 잡음이 섞인다면 성능저하를 가져을 수 있다. 따라서 본 논문에서는 칼만 필터를 바탕으로 한 MUSIC 알고리즘에 시변메모리인자와 후버 영향 함수를 도입하여 임펄스 잡음에 강인한 DOA 추정알고리즘을 제안한다.

리튬이온전지 음극활질용으로 Hybrid of pitch based graphite impregnating natural graphite와 Hybrid of pitch based carbon impregnating natural graphite로 탄소전극을 제작하여 전기화학적인 특성을 연구하였다. Natural graphite에 pitch based graphite나 pitch based carbon의 혼합은 흑연의 이론용량인 372 mAh/g를 초과하는 고용량을 나타내었다. 이것은 극소공동에 리튬종의 삽입과 탈삽입에 의한 것으로 파악된다. 그러나 충 방전이 계속 진행되면서 방전용량이 급격히 저하되는 현상이 관찰되었다. X-선 회절분석 결과로부터 Hybrid of pitch based carbon impregnating natural graphite 탄소전극에는 amorphous carbon이 상대적으로 다량 존재한다는 것을 확인하였고, 이는 리튬의 삽입된 상태의 전위에 분포가 있어 충 방전시에 완만한 전압의 구배를 만들며, 비가역용량을 증가시키는 요인으로 파악되었다.

마이크로 컬럼은 차세대 리소그라피 기술의 하나로 마이크로 컬럼의 기능이 기존의 전자빔 컬럼을 능가하여 주목을 받는다. 초소형 전자빔 컬럼은 기존의 전자빔 컬럼과 비교하여 수차, 렌즈의 크기 및 원형에 성능이 보다 민감하게 반응하므로 정확한 정렬과 가공 기술은 초소형 전자빔 마이크로 컬럼의 성능에 매우 중요하다. 그러나, 기준치 piezoelectric transducer (PZT)나 scanning tunneling microscopy (STM)을 이용한 정렬 기술은 매우 복잡하고 어려운 단점이 있다. 본 연구에시는 레이저 회절 패턴방식과 레이저 정밀 가공으로 실리콘 렌즈와 파이렉스 spacer를 정확하게 교대로 조립하였으며, 이 방법으로 완성된 마이크로 컬럼의 STEM동작을 조사하였다.

Recently, because GIS equipment has problems on confidence according to long-time usage, development of diagnosis technique has been importantly recognized. Therefore. measurement and analysis of PD has been generally used much equipment of GIS. But, in case of measurement of PD at field, real trouble signals are difficult to classify noise. Accordingly, a variety of trouble conditions for DS were simulated, and detected signals were analyzed by the application of electrical and mechanical methods. For this analysis, detected signals were accumulated according to phase-magnitude with the application of Induction sensor, and then we analyzed the characteristics. For the simulation experiment, we made DS for 170kV GIS and analyzed the characteristics of detected singals with the application of neural network algorithm

In this paper, in other the study shift a degradation and electrical properties on ZnO based grain beurdry layer, we mearured thermally stmulated current. Also the TSC was investigated for understanding of GBL's interfacial carrier shift on bias voltage, bias time, bias temperature. as a result, the two peahs of $p_1$, $p_2$ was observed by conduction of the trapped carrier of border between the oxidation layer and the grains $P_3$ and $P_4$ Peaks observed to the ionization excition excitation in the grain.

현재 전기용량의 국가표준은 1 kHz, 1592 Hz에서만 유지 및 보급이 되고 있다. 그러나 전기용량 및 임피던스를 측정하는 브리지와 LCR meter들은 비교적 넓은 주파수 범위에서 측정이 가능하도록 생산이 되고 있다. 따라서 이러한 기기들의 교정은 실제적으로 사용되고 있는 주파수 전 영역이 아닌 1 kHz 만 되고 있어서 완전한 교정이라고 할 수 없다. 본 논문에서는 이를 해결하기위하여 임피던스 analyzer의 one-port 측정기술을 사용하여 4-terminal-pair(이하 4TP) 전기용량 표준기 각각의 terminal에서 임피던스를 필요 주파수에서 측정하고, 측정된 임피던스 matrix를 이용하여 4TP의 transfer 어드미턴스와 출력임피던스를 계산 하였다.

Bi2212 superconducting thin films fabricated by using the ion Beam Sputtering Method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

This paper presents multibit Sigma-Delta ADC using noise-shaped dynamic element matching(DEM). 5-bit flash ADC for multibit quantization in Sigma Delta modulator offers the following advantages such as lower quantization noise, more accurate white-noise level and more stability over single quantization. For the feedback paths consisting of DAC, the DAC element should have a high matching requirement in order to maintain the linearity performance which can be obtained by the modulator with a multibit quantizer. The DEM algorithm is implemented in such a way as to minimize additional delay within the feedback loop of the modulator Using this algorithm, distortion spectra from DAC linearity errors are shaped. Sigma Delta ADC achieves 82dB signal to noise ratio over 615H7z bandwidth, and 62mW power dissipation at a sampling frequency of 19.6MHz. This Sigma Delta ADC is designed to use 0.25um CMOS technology with 2.5V supply voltage and verified by HSPICE simulation.

Supercapacitors, also known as electrochemical capacitors, are being extensively studied due to an increasing demand for energy-storage systems. These devices offer many advantages over conventional secondary batteries, which include the ability of fast charge propagation, long cycle-life and better storage efficiency. That is to say supercapacitor bridges the gap between conventional capacitors and batteries. A new type electric double layer capacitor (EDLC) also called supercapacitors. Recently, supercapacitors concerns about their high power density and energy density. So we experiment with EDLC by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. The electrode for supercapacitor was prepared by synthesis of DAAQ covered CNFs. CNFs could be covered with very thin DAAQ oligomer from the results of CV, XRD, DSC, SEM images, and TEM images. Dissolved electrode active material in NMP solution has been drop-coated on carbon plate. Its electrochemical characteristics were investigated by cyclic voltammograms. And compared with different electrolyte of aqueous type. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors with respect to specific capacity and scan rate dependency.

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

A Controlled neural networks are proposed in order to measure nonlinear environments in adaptive and in realtime. The structure of it is similar to recurrent neural networks: a delayed output as the input and a delayed error between tile output of plant and neural networks as a bias input. In addition, we compute the desired value of hidden layer by an optimal method instead of transfering desired values by backpropagation and each weights are updated by RLS(Recursive Least Square). Consequently, this neural networks are not sensitive to initial weights and a learning rate, and have a faster convergence rate than conventional neural networks. This new neural networks is Error Estimated Neural Networks. We can estimate nonlinear models in realtime by the proposed networks and control nonlinear models. To show the performance of this one, we have various experiments. And this controller call prove effectively to be control in the environments of various systems.

A novel voltage-current reference circuit for stable voltage-current applications is Proposed. Circuits for a positive and for a negative voltage-current reference are presented and are designed with commercial CMOS technology. The voltage-current reference that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the HSPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage and output current each is $0.57mV/^{\circ}C$, $0.11{\mu}A/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

본 연구에서는 송전선용 내열 Al합금인 Al-Zr합금의 내열성과 도전율을 동시에 향상시키기 위해 제 3원소(Mm(misch metal), Ag, Be)를 첨가하고 이것에 의한 물성변화를 공정별로 추적분석 하였다. 본 연구에 의해 측정된 주요 물성은 공정에 따른 미세조직 변화와 경도 및 도전율 둥이 측정, 조사되었다. 연구결과, Mm첨가에 의해 주조조직은 미세화 되었으며 경도와 도전율은 향상되었다. Be첨가에 의해서는 급냉 후 주조조직이 조대화 하였고 주조상태에서 이미 60%IACS에 근접하는 우수한 도전율을 나타내었다. 또한 주조 후 열처리 과정에서 주조조직의 분해는 촉진되었으며 시효석출과정에서는 $Al_3Zr$상의 석출은 억제되었다. 그러나 Al-Zr합금에 대한 Ag의 첨가는 경도와 도전율 모두에서 큰 영향을 주지 않는 것으로 판단되었다.

This work describes the effect of electrode binder on the characteristics of electric double layer capacitor Among carboxymethylcellulose (CMC), Polyvinylpyrrolidone (PVP), Polyvinyl Alcohol (PVA), and Polyvinylidene Fluoride (PVDF), the unit cell using CMC showed good rate capability between $2.5mA/cm^2{\sim}100mA/cm^2$ current density. However, CMC as a binder is incongruent, because the electrode bound with CMC is rigid and easy to crack during a press and winding process for fabrication of capacitor. The unit cell capacitor using the electrode bound with binary binder composed of CMC and Polytetrafluoroethylene (PTFE), especially in composition CMC : PTFE : 60 : 40 wt.%, has exhibited the better mechanical properties than those of the unit cell with CMC. On the other hand, it was also noted that the mechanical properties of CMC+PTFE electrode, coated on underlayer composed of CMC and carbon black, were much improved the binding force.

This paper presents a built-in current sensor(BICS) that can detect defects in CMOS integrated circuits through current testing technique - Iddq test. Current test has recently been known to a complementary testing method because traditional voltage test cannot cover all kinds of bridging defects. So BICS is widely used for current testing. but there are some critical issues - a performance degradation, low speed test, area overhead, etc. The proposed BICS has a two operating mode- normal mode and test mode. Those methods minimize the performance degradation in normal mode. We also used a current-mode differential amplifier that has a input as a current, so we can realize higher speed current testing. Furthermore, only using 10 MOSFETS and 3 inverters, area overhead can be reduced by 6.9%. The circuit is verified by HSPICE simulation with 0.25 urn CMOS process parameter.

ACSR전력선의 송전용량 증가를 위해 개발된 증용량저이도 송전선인 STACBUAW(Super Thermal-resistant Aluminum alloy Conductors, aluminum-clad Invar-Reinforced)전선은 초내열 Al도체 및 인바강선의 사용으로 비교적 고온에서의 안정적 운전이 가능하다. 그러나 고온 환경에서 장시간 노출된 STACIR/AW전선의 안정적 관리를 위해서는, 열화 된 STACIR/AW 전선의 인장강도, 각 구성소재의 탄성 계수, 비틀림 계수 둥과 같은 기계적 물성이 장기 운전 모의를 위해 설정된 열화온도, 열화시간 등에 대해 종합적으로 평가될 필요가 있다. 또한 크립 등과 같이 고온응력 부하상태에서의 변형거동과 탄성계수 및 선 팽창계수의 온도의존성 등은 전선의 이도관리와 예측을 위해서도 명확히 규명되어야할 중요한 관리 인자이다. 그러나 현재까지는 이들에 대해 수행한 어떠한 연구결과들도 보고 되어 있지 않은 실정이다. 본 연구에서는 STACIR/AW $410mm^2$ 송전선을 장시간 운전의 모의를 위해 가속열화 시키고 가속열화에 따른 STACIR/AW전선 및 그 구성소재의 강도, 비틀림 특성의 변화를 조사하여 장시간 운전에 따른 STACIR/AW전선의 안정성을 평가하여 보고하고자 하였다.

송전용량 증가를 위해 개발되어 최근 본격적으로 사용되고 있는 STACIR/AW 송전선은 송전용량의 증가에 따라 그 운전환경도 변화하여 연속사용온도의 경우, 기존 ACSR 전선의 90t에 비해 높은 $210^{\circ}C$로 규정 되어 있을 만큼 고온에서 운전되고 있다. 따라서 STACIR/AW 송전선은 이도설계와 그 운용에 있어서 운전 온도 상승에 따른 각별한 주의관리가 필요하다 실제 STACIR/AW송전선은 그 설계단계에서도 이와 같은 고온운전 환경을 고려하여 고온에서도 소정강도를 유지하는 내열 Al도체와 이도제어를 위한 낮은 열팽창 특성의 INVAR합금(Fe-35Ni계 합금)을 강선으로 하는 특화된 재료로 구성되어 있다. 그러나 이와 같은 재료 설계적 보완책에도 불구하고 실제 송전선은 전선의 자중, 철탑 간에 형성된 가설장력과 같은 다양한 응력이 고온환경에서 부하되는 복합 열화 상태에 노출되어 있고, 이것은 재료학적인 관점에서 크릴 변형 발생의 가능성을 높이고 있으나 이것에 대한 연구 또는 실험결과는 크게 미미한 실정이다. 본 연구에서는 STACIR/AW $410mm^2$ 송전선과 그 구성소재를 대상으로 $200^{\circ}C$, $300^{\circ}C$에서 장시간 열화한 후, 구성소재의 탄성계수, 열팽창계수 및 STACIR/AW전선의 크림변형 거동을 조사하여 열화에 노출된 STACIR/AW 송전선의 이도변화 거동을 규명하고자 하였다.

The introduction of invasive marine species into new environments by ship's ballast water, attached to ships' hulls and via other vectors has been identified as one of the four greatest threats to the world's oceans by Global Environment Facility (GEF). EMO (International Maritime Organization) is carrying out the international restriction of the effluence suppression and treatment of Ship's ballast water by Ballast Water Management Convention. In this paper, to deal with this international restriction convention and to consider economic potential of ship's ballaster treatment market near future, the equipment and technology of ship's ballaster water treatment was studied.

The combination of methane-chemical activation and Self-propagating High-temperature synthesis (SHS) has widened the possibilities for both methods. For YBCO systems the investigation showed that a short-term mechano-chemical activation of initial powders before SHS leads to single-phase and ultra-fine products. A new technique for preparation ultra-fine high-temperature superconductors of YBCO composition with a grain size d < $1{\mu}m$ is developed. The specific feature of the technique is formation of the $YBa_2Cu_3O_{7-x}$ crystalline lattice directly from an X-ray amorphous state arising as a result of mechanical activation of the original oxide mixture. The technique allows the stage of formation of any intermediate reaction products to be ruled out. X-ray and magnetic studies of ultra-fine high temperature superconductors (HTS) are carried out. Dimension effects associated with the microstructure peculiarities are revealed. A considerable enhancement of inter-grain critical currents is found to take place in the ultra-fine samples investigated.

최근 에너지 소비구조의 선진화에 따라 전력수요는 매년 10%이상 증가하고 있지만 철탑부지확보 및 환경 문제 둥에 의해 신규 송전선의 건설은 점차 어려워지고 있다. 이에 대한 대책으로 철탑의 교체 없이 송전선의 전류용량간 증가시키는 방안이 우선적으로 고려되어 적용되고 있다. 이미 국내에서도 기존 송전선인 ACSR 전선을 중용량 저이도의 특성을 가진 STACIR/AW(Super Thermal-resistant Aluminum alloy Conductors, aluminum-clad Invar-Reinforced)송전선으로 교체하여 전력 수송량을 증가시키고 있다. STACIR/AW전선은 도체의 내열성을 향상시켜 연속허용온도$(210^{\circ}C)$를 높임으로 전류용량을 증가시키고, ACSR에 사용되는 강심재료인 고탄소강선을 선팽창계수가 낮은 인바강선(INVAR)으로 대체함으로 고온환경에 따른 이도증가를 방지하고 있다. 그러나 STACIR/AW 송전선은 ACSR 송전선에 비하여 연속허용온도가 높고 경간의 거리가 멀기 때문에 열화에 의한 피로특성의 변화 가능성이 높다. 따라서 본 연구에서는 증용량저이도전선의 강심소재인 INVAR/AW강선을 소정의 온도에서 경년 열화하고, 열화시간에 따른 강도와 피로특성의 변화를 조사하여, STACIR/AW전선의 안정적 운전을 위한 재료물성적 관리인자를 도출하고자 하였다.

수열처리법으로 nano-sized $CeO_2$ 입자를 $Al_3O_3$ 입자의 표면에 균일하게 코팅하여 $AL_2O_3/O_2$ composite 연마 입자를 제조하었다. 제조된 $Al_2O_3\CeO_2$ composite 입자의 뭍성을 TEM, XRD, zeta potential analyzer 및 particle size analyzer로 측징하였다. $Al_2O_3/CeO_2$ composite 입자와 구성된 슬러리와 비교 시료로서 $Al_2O_3$와 $CeO_2$ 입자를 혼합한 슬러리를 사용하여 thermal oxide film에 대한 연마특성을 평가하였다. 연마슬러리에 포함된 $A1_2O_3/CeO_2$ composite 입자와 $Al_2O_3$와 $CeO_2$ 혼합입자에서 나노 크기의 세리아 입자가 sub-micron 크기의 알루미나 입자의 표면에 균일하게 코팅되므로서 $Al_2O_3$ 단일 성분의 슬러리에 비해 removal rate(RR)는 106 nm/min, WIWNU는 $8\sim9%$, roughness는 $2.6{\AA}$의 향상된 연마 특성을 나타내었다. 알루미나 입자의 불규칙한 형상 때문에 $Al_2O3/CeO_2$ composite 슬러리와 $Al_2O_3$ 와 $CeO_2$ 혼합슬러리의 연마 특성이 비슷한 수준을 나타내었다.

The design rules are being more strict with requirement of operation speed and development of IC industry. For this reason, required minimum line-width has been narrowed under sub-micron region. As the length of minimum line-width is narrowed, local and global planarization are being prominent. CMP(Chemical-Mechanical Polishing), one of the planarizarion technology, is a process which polishes with the ascent of chemical reaction and relative velocity between pad and wafer without surface defects. CMP is performed with a complex interaction among many factors, how CMP has an interaction with such factors is not evident. Accordingly, the studies on this are still carrying out. Therefore, an examination of the CMP phenomena and an accurate understanding of compositive factors are urgently needed. In this paper, we will consider of the relations between the effects of temperature which influences many factors having an effect on polishing results and the characteristics of CMP in order to understand and estimate the influence of temperature. Then, through the interaction of shown temperature and polishing result, we could expect to boost fundamental understanding on complex CMP phenomena.

In this study, physical characteristics of alumina slurry on variation of pH value and the effect of non-ionic surfactants on alumina slurry for copper chemical mechanical planarization (CMP) slurry have been investigated. After pH value of the slurry with alumina abrasive was changed by adding various amount of $HNO^3$ or KOH, the differences of settling rate, particle size, and zeta-potential were estimated. Better settling rates were shown in slurries with alumina abrasive at near pH 1. Higher zeta-potential was shown at around pH 2 in alumina slurry and the point of zero charge (PZC) was measured at about pH $9\sim10$. Non-ionic surfactant was added in the slurry with 5wt% alumina abrasive to get its effect on slurry practically. Abrasive size was smaller increased when amount of surfactant increased in slurry with P-4 as abrasive; on the other side, it was smaller when amount of surfactant decreased with AES-12. Variation of zeta-potential has no tendency with adding surfactant; however, values of zeta-potential were between $35\sim50mV$. The proper amount of surfactant was $0.1\sim1.0wt%$ in slurry with P-4 and $0.5\sim1.0wt%$ in slurry with AES-12 respectively. Excellent dispersion stabilization was obtained by addition of non-ionic surfactant

본 연구는 Cu CMP공정 중 알루미나 연마입자의 wafer 표면에서의 점착과 오염을 AFM (Atomic Force Microscopy)을 사용하여 슬러리내에서 점착력 측정과 실제 연마 후 wafer 표면의 오염을 실험적으로 비교 평가하였다. 연마입자의 adhesionn force 측정에 있어서도 역시 wafer들의 zetapotential 결과와 잘 일치하였으며, 모든 wafer 종류에 관계없이, 산성 영역에서 염기성영역의 슬러리가 적용됨에 따라 adhesion force가 작아짐을 확인할 수 있었다. 특히 FSG wafer의 zetapotential 결과는 비록 산성 분위기에서는 양성 전하값을 나타내었으나, 염기성 분위기의 pH에서는 급격하게 음성 전하값을 나타내었고, 이는 adhesionn force결과와 FESEM 결과와 잘 일치하였다.

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

Copper는 낮은 저항률과 높은 Electromigration 저항 때문에 반도체 소자에 배선 재료로 사용된다. CMP 공정을 이용 하여 Cu wafer의 여러 가지 특성을 파악하기에는 wafer의 소모량이 많고 고가가의 비용이 예상 되므로, 본 논문에서는 비용절감을 위하여 wafer를 Disc로 대체 하고자 실험을 진행 하였고 Cu wafer와 Disc의 비료 방법은 우선 PM-5 (Genitech. co) 장비를 이용하여 removal rate의 차이점을 알 아 보았으며, 서로의 etch rate을 reomval rate과 비교하였다. EG&G 273A를 통하여 Cu wafer와 disc의 corrosion potential과 $R_p$ (Polarization resistance)값을 서로 비교 하였다. 이 논문에서는 이러한 것들을 서로 비교 하여, Cu wafer와 disc에서의 상관관계를 알고자 하였으며, 만약에 Cu wafer와 disc의 특성이 비슷하다면, Cu wafer 대신에 disc를 이용 하여 실험하여도 되는지에 관하여 조사 하였다.

실제 Cu CMP 공정이 진행되는 동안 연마입자의 응집현상을 관찰하긴 어렵다. 따라서 본 연구에서는 인위적으로 첨가한 large particle들이 공정 중에 발생하는 응집입자라 가정하고 각 공정에 따른 연마속도와 friction force를 측정하여 large particle을 첨가하지 않은 슬러리와 비교 평가해보았다. large particle을 첨가한 슬러리의 경우에 각 공정변수에 따라 연마속도와 friction force가 작아짐을 관찰하였다. 즉, 슬러리 내에 응집현상이 발생하게 된다면 large particle이 연마의 방해 인자로 나타남을 관찰 할 수 있었다.

It is very important that get polishing characteristic that to be stable that accomplish planarization of high efficiency in chemical mechanical polishing, and there is repeatability Groove of pad causes much effects in flow of slurry among various factors that influence in polishing characteristic, is expected to cause change of lubrication state and polishing characteristic in contact between wafer and pad. Therefore, divided factors of pad groove by groove pattern, groove profile, groove dimensions. This research wishes to study effect that dimension of pad groove gets in polishing performance. When changed dimension (width, depth, pitch of groove) of groove, measured change of removal rate and friction force. According as groove dimension changes, could confirm that removal rate and friction force change. While result of this experiment studies effect of pad groove in CMP, it is expected to become small help.

Chemical Mechanical Polishing is referred to as a three body tribological system, because it includes two solids in relative motion and the slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason of not only the friction force but also material removal during polishing. The friction force generated by the abrasives was inspected with the change of abrasive size and concentration in this paper. The variation of coefficient of friction with abrasive concentration and size could result from the condition of contact and load balance between wafer and abrasives carried by pad asperity. The simulation was performed in this paper and compared with the result of experiment. The material removal rate also estimated with abrasive concentration and size increasement.