Photonic crystal is a dielectric materials or a set of different dielectric materials with periodic structure of refractive index. Line defect obtained by leaving out a row of rod along the $\Gamma$-X direction. We showed the change of group velocity in waveguide mode and found a small group velocity. Characteristic of the small group velocity described by electric field distribution. As the phase variation, small group velocity confirmed from positive to negative.

A plane wave expansion method(PWEM) was applied for photonic band structure calculation. We examined zero group velocity modes in photonic crystals. The zero group velocity was obtained in second band along G-K direction. We expanded Brillouin zone, and investigated on zero group velocity.

A light guiding plate (LGP) with nanometer-sized patterns was fabricated by injection molding method which employed electrically healed mold and the transcription of injection-molded parts was investigated. A Ni stamper was fabricated using MEMS technology. The Ni stamper was then installed in a movable heated core which is a key part of the mold. Using this mold, injection-molded plastic LGP parts were manufactured at different mold temperatures and the effect of the temperature on the transcription of the parts was investigated.

The dynamics of nano or micro sized-particles in liquid crystal (LC) medium under an external electric field is of theoretical and technological interest. A fullerene of 10 wt% was doped into the LC medium and its electric field induced motion was controlled by both in-plane and vertical electric fields. In the proposed device, pixel electrode I and pixel electrode II were designed consecutively on the bottom substrate and common electrode on the top of the substrate. When the electric field was applied, the fullerenes start to move in direction of applied electric field. The dark, grey and white states in the proposed device can be obtained by suitable combination of the polarity of applied electric field at pixel electrode I, pixel electrode II and common electrode. The dynamical motions of fullerene particles in LC medium suggest that fullerene can be designed for electronic-paper like displays.

The conventional in-plane field driven-vertical alignment display (VA-IPS) shows fast response time but transmittance shows very low and operating voltage is very high. In this paper, we studies electro-optical properties of the novel in-plane field driven vertical alignment device which has two transistors on array part and common electrode on CF substrate with dielectric layer. The device shows fast response time and high transmittance.

Electro-optical properties of liquid crystal display (LCD) using fringe-field switching (FFS) devices depend on many parameters such as cell retardation, electrode structure, magnitude and sign of dielectric anisotropy, rubbing angle and cell gap. In this paper, the light efficiency of FFS device depending on magnitude of positive dielectric anisotropy with other cell parameters such as rubbing angle and angle and cell gap have been explored compared with FFS device using LC with negative dielectric anisotropy.

Optical bounce during switching in the fringe field switching (FFS) mode using a liquid crystal (LC) with positive dielectric anisotropy has been observed. According to the analysis, it occurs at two positions which are center and edge of the pixel electrode, which decreases decaying response time. The former is major and mainly associated with increase in twist angle instantaneously during switching off resulted from decrease in tilt angle near by LC molecules at center. This paper discusses the origin of such optical bounces.

Generally Lighting system consists of lamp and luminaire. When a fluorescent lamp is installed in luminaire, power and light output is changed by ambient temperature. Particularly electrodeless lamp depends on the changes that are mercury pressure with amalgam temperature and magnetic properties with ferrite temperature. It has finally influence on optical efficiency. In this study, the temperature change of ferrite and cold spot, vessel are measured at transitional state and then same characteristics are measured with increase of ambient temperature. At transitional state, luminous flux is related to temperature change of cold spot that compare with behavior of mercury pressure and light output. At increase of ambient temperature, we analyzed change that efficiency and electrical, optical characteristics of electrodeless lamp are related to ferrite core and cold spot temperature.

Photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) were obtained for the illumination from various backlight sources and the results were compared and analyzed in terms of the photon energy spectral characteristics of the backlights obtained from the integration of the multiplication of the photon energy and the spectral intensity at etch wavelength. It was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500nm.

In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulator OTFT showed a threshold voltage of -1.36V, an on/off current ratio of $1.9{\times}l0^3$ and field effect mobility $0.023\;cm^2/V_s$.

White light emitting device based on a red fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) has been fabricated. The white OLED consists of it and a blue phosphorescent material FIrPic (iridum-bis(4,6,-difluorophenylpyridinato-N,C2)-picolinate) The threshold voltage is 5.3V, and the brightness reaches $1000\;cd/m^2$ at 11V, $14.5\;mA/cm^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 1m/W at 6V, $0.1mA/cm^2$.

In this paper, We have studied Electron Transport Layer(ETL) in the New Organics applied to Red phosphorescent organic light-emitting devices. The structure of ITO/2-TNATA(15nm)/CBP;$Ir(piq)_3$/DPVBi(30nm)/New ETL(60nm)/LiF(0.5nm)/Al(100nm) has been used, measured changing doping concentration of EML. The results of OLED turn-on voltage at 2.2V, and Maximum Luminance at 2.8V was $1000cd/m^2$. This high luminance at low voltage results from a high electron. conduction of the new electron transport layer.

We have investigated low temperature sintering characteristics of organic Ag complex. Organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 30 to $80^{\circ}C$ and sintering time was varied from 1 to 228 hour. The sheet resistance was abruptly changed at $80^{\circ}C$-6h, $65^{\circ}C$-24h, $30^{\circ}C$-228 hour and the thickness of the coated film was significantly decreased. The sheet resistance of Ag films were about $0.53\;{\Omega}/{\square}$ at the $80^{\circ}C$ - 12hour.