• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.593-602
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• 1991

Al2O3 and NiO-doped Al2O3 powders were prepared from the ethanol solution of Al (NO3)3$.$9H2O and Ni(NO3)2$.$6H2O by spray pylolysis method using two-fluid nozzle. As a result of spraying test with 0.3 mol/{{{{ iota }} concentration starting solution, mean droplet sizes varied with 8.99∼9.69$\mu\textrm{m}$ and those standard deviation were 4.57∼5.12. As-prepared powders which were synthesized at 1000$^{\circ}C$ have spherical shape, sizes of 0.1∼3.0$\mu\textrm{m}$ and specific surface area of 22.34∼24.20㎡/g. Most powders consisted of {{{{ gamma }}-Al2O3 phase and transforned into ${\alpha}$-A;2O3 phase by calcination at 1100$^{\circ}C$ for 1 hr. NiO-doped Al2O3 sintered bodies had better sinterability than those of pure Al2O3 and 0.3 wt% NiO-doped Al2O3 had near theoretical density and dense microstructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.731-739
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• 2014

Aluminum and boron co-doped zinc-oxide(AZOB) powders as transparent conducting oxide(TCO) were prepared by spray pyrolysis at $900^{\circ}C$. The micron-sized AZOB particles were prepared by spray pyrolysis from aqueous precursor solutions for aluminium, boron, and zinc. The micron-sized AZOB particle after the spray pyrloysis underwent post-heat treatment at $700^{\circ}C$ for 2 hours and it was changed fully to nano-sized AZOB particle by ball milling for 24 hours. The size of primary AZOB particle by Debye-Scherrer Equation and surface resistance of AZOB pellet were measured.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.660-664
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• 2000

Effect of various kinds of additive such as AlOOH, Al(OH)3, Al2Si2O5(OH)4, Nb2O5, TiO2 and MgO on the properties and microstructures of UO2 pellet has been examined. All the tested dopants had played a role to reduce sintered density and open porosity. It was revealed that the addition of TiO2 made pellet more stable thermally. UO2 pellet doped with 0.2wt% TiO2 was swelled rather than densified after annealing for 24 hrs at 1$700^{\circ}C$. It was attributed to large pore with spherical shape. Titinia and silicon coexisted with Al element were more effective to increase grain size than other additives. It could be also revealed that the formation of liquid phase was the main cause of grain growth.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.424-432
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• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.822-826
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• 1992

SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{\circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.

• Journal of the Korean Applied Science and Technology
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• v.24 no.1
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• pp.74-78
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• 2007

A new blue phosphorescent material for organic light emitting diodes (OLEDs), Iridium(III)bis[2-(4-fIuoro-3-benzonitrile)-pyridinato-N,C2'] picolinate (Firpic-CN), was synthesized and studied. We compared characteristics of Firpic-CN and Bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) which has been used for blue dopant materials frequently. The devices structure were indium tin oxide (ITO) (1000 ${\AA}$)/N,N'-diphenyl-N,N'-(2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) (500 ${\AA}$)/4,4'-N,N'-dicarbazole-biphyenyl (CBP) : FIrpic and FIrpic-CN (X wt%)/4,7-diphenyl-1,10-phenanthroline (BPhen) (300 ${\AA}$)/lithum quinolate (Liq) (20 ${\AA}$)/Al (1000 ${\AA}$). 15 wt% FIrpic-CN doped device exhibits a luminance of $1450\;cd/m^2$ at 12.4 V, luminous efficiency of 1.31 cd/A at $3.58mA/cm^2$, and Commission Internationale d'Eclairage $(CIE_{x,y})$ coordinates of (0.15, 0.12) at 12 V which shows a very deep blue emission. We also measured lifetime of devices and was presented definite difference between devices of FIrpic and FIrpic-CN. Device with FIrpic-CN as a dopant presented lower longevity due to chemical effect of CN ligand.