• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Environmental Engineering Research
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• v.24 no.4
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• pp.646-653
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• 2019

Recovery of valuable metals in the industrial wastewater and sludge has attracted an attention owing to limited metallic resources in the earth. In this study, we firstly fabricated Ti/Ir-Ru electrodes by spin coating technique for effective recovery of Cu in electrowinning process. Two different Ti/Ir-Ru electrodes were fabricated using 100 and 500 mM of precursors (i.e., Ir-Ru). SEM-EDX and AFM revealed that Ir and Ru were homogenously distributed on the surface of Ti plate by the spin coating, in particular the electrode prepared by 500 mM showed distinct boundary line between Ir-Ru layer and Ti substrate. XRD, XPS, and cyclic voltammetry also revealed that characteristics of IrO₂, RuO₂, and TiO₂ and its electrocatalytic property increased as the concentration of coating precursor increased. Finally, we carried out Cu recovery experiments using two Ti/Ir-Ru as anodes in electrowinning process, showing that both anodes showed a complete removal of Cu (1 and 10 g/L) within 6 h reaction, but much higher kinetic rate constant was obtained by the anode prepared by 500 mM. The findings in this study can provide a fundamental knowledge for surface characteristics of Ti/Ir-Ru electrode prepared by spin coating method and its potential feasibility for effective electrowinning process.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.974-978
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• 1993

Glass viscosity effects on the electrical properties and microstructure of RuO2 based thick film resistors (TFR) using alumina modified lead borosilicate glasses were studied. AT 85$0^{\circ}C$, the glass viscosities were increased from 4.24Pa.s to 51.5Pa.s when the alumina was added from none to 14 weight percent to the standard glass of 63% PbO, 25% B2O3 and 12% SiO2. The resistivities of resistors were generally decreased and the microstructure development was retarded as the viscosity of the glass increased. This is contrary to the generally accepted thought that the low resistivity is due to fast microstructure development kinetics in TFR. Even though the glass viscosity retards the microstructure development kinetics, the overall network formations are favored for higher viscosity of glass, such that the sheet resistivities were decreased as the glass viscosity increased.

• 한국전자현미경학회:학술대회논문집
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• 1996.11a
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• pp.24-27
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• 1996

• Journal of Energy Engineering
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• v.24 no.2
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• pp.34-39
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• 2015

This study confirmed the characteristics of hydrogen production according to electrode materials by producing non-diaphragm alkaline water electroanalyzer that can be controlled at medium temperature to produce hydrogen. As a result of the electrochemical characteristics by electrode material ($IrO_2/Ti$, $RuO_2/Ti$, Ti), the highest efficiency was found in $RuO_2/Ti$, as a result of hydrogen production experiment by electrolyte concentration, electrolyte concentration has a tendency to be proportional to hydrogen production and the condition of 30% KOH showed the highest hydrogen production as $118.9m^3/m^3/day$. In the experiment that confirmed hydrogen production according to electrode materials, in case of combination of anode ($IrO^2/Ti$) and cathode ($RuO^2/Ti$), it was $157.55m^3/m^3/day$ that showed a higher hydrogen production by around 6.97% than that of $IrO^2/Ti$ and cathode. It is presumed that the improvement of electrochemical activation of DSA electrode increases hydrogen production and influences the improvement of durability compared to the former electrode so that it enables stable alkaline water electrolysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.357.2-357.2
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• 2014

Ruthenium (Ru) 박막은 우수한 화학적 열적 안정성 및 높은 일함수(4.7eV) 특성으로 인해 20 nm급 이하의 차세대 DRAM capacitor의 전극 물질 및 Cu metalization을 위한 seed layer로 각광을 받고 있다. Ru박막의 나노스케일 정보전자소자로의 적용을 위해서는 두께제어가 용이하고 3D 구조에서 우수한 단차 피복 특성을 갖는 atomic layer deposition (ALD)을 이용한 박막 형성이 필수적이다. 이에 본 연구에서는 ALD 방법을 이용하여 0가의(cymene) (1,5-hexadiene) Ru (0) (C16H24Ru) 전구체를 합성, ALD 방법을 이용하여 우수한 초기성장거동을 갖는 Ru 박막을 증착 하였다. 형성된 Ru 박막의 표면 형상, 두께, 밀도를 주사전자현미경(Scanning electron microscopy)과 X-선 반사율 측정(X-ray reflectometer)으로 조사하였다. 또한 전기적 특성을 4침법(four-point-probe)으로 측정하였고, 박막의 화학적 조성과 결정성의 정보를 X-선 광전자분광법(X-ray photoelectron spectroscopy)과 X-선 회절(X-ray diffraction)을 이용하여 확인하였다.

• Journal of Korea Society of Digital Industry and Information Management
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• v.18 no.1
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• pp.11-24
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• 2022

Open Radio Access Network (O-RAN) standard has been proposed to separate the baseband signal processing unit from the Radio Frequency (RF) unit at base station system mainly for reducing the cost of base station systems through open-source interfaces between the two units. To satisfy the performance metrics in various scenarios, several fronthaul functional split options were presented by O-RAN. Amongst these options, the split option 7-2x is widely adopted in practical applications due to its excellent trade-off between the required bandwidth and RU overhead. In this paper, we present a hardware implementation of a base station system that is compliant with the Category B of O-RAN split option 7-2x. It consists of O-DU and O-RU implemented with a commercial off-the-shelf Digital Signal Processor and RF transceiver, respectively. The performance of the proposed base station system is evaluated in terms of Bit Error Rate and received signal power as well as the required fronthaul bandwidth. Through various experimental tests, we have observed that the proposed system reduces the fronthaul bandwidth nearly by 89.7% compared to the conventional system that dose not employ the O-RAN standard.

• Journal of Radiation Protection and Research
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• v.8 no.2
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• pp.15-35
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• 1983

High voltage paper-electrophoresis of fission products from 24 hour neutron-irradiated and 150 days-decayed 90% highly enriched uranyl nitrate solution has been carried out by using the specially designed migration apparatus. The separation of Zr-95 and Nb-95 from the other fission products is possible under the migration condition of 0.1 $M-HClO_4$ (pH=0.85), 0.05 M-HCl+0.09M-KCl (pH=0.9), 0.1M-HCl (pH=1.1) and 0.01 M-HCl (pH=2.0). Zr-95 and Nb-95 are separated out at+1cm from the fiducial point. The separation of Zr-95 and Nb-95 from each other is possible under the migration condition of 0.1 $M-HClO_4$, 0.05 M-HCl+0.09 M-KCl, 0.1 M-HCl and 0.1 M-HAc+0.1 M-NaAc (pH=4.68) together with 2% ammonium oxalate. Nb-95 is separated out at $-6{\sim}-7cm$ from the fiducial point and Zr-95 at $+1{\sim}-lcm$. The separation of Ru-103 from the other fission products is possible under the migration condition of 0.025 $M-Na_2CO_3+0.025\;M-NaHCO_3$ (pH=10.0), 0.01M-$Na_3PO_4$ (pH=11.7) and 0.1 M-NaOH (pH=13.2). Ru-103 migrates towards the anode -6cm, -4cm and -3cm, respectively.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.130-135
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• 2016

To alloy high melting point elements such as boron, ruthenium, and iridium with copper, heat treatment was performed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ at the temperature of $1200^{\circ}C$ in vacuum for 30 minutes. The microstructure analysis of the alloyed sample was confirmed using an optical microscope and FE-SEM. Hardness and trace element analyses were performed using Vickers hardness and WD-XRF, respectively. Diffusion profile analysis was performed using D-SIMS. From the microstructure analysis results, crystal grains were found to have formed with sizes of 2.97 mm. For the copper alloys formed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ the sizes of the crystal grains were 1.24, 1.77, and 2.23 mm, respectively, while these sizes were smaller than pure copper. From the Vickers hardness results, the hardness of the Ir-copper alloy was found to have increased by a maximum of 2.2 times compared to pure copper. From the trace element analysis, the copper alloy was fabricated with the expected composition. From the diffusion profile analysis results, it can be seen that 0.059 wt%, 0.030 wt%, and 0.114 wt% of B, Ru, and Ir, respectively, were alloyed in the copper, and it led to change the hardness. Therefore, we verified that alloying of high melting point elements is possible at the low temperature of $1200^{\circ}C$.