• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.939-943
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• 2011

In this paper, reliability of the two sandwiched MIM capacitors of $Al_2O_3-HfO_2-Al_2O_3$ (AHA) and $SiO_2-HfO_2-SiO_2$ (SHS) with hafnium-based dielectrics was analyzed using two kinds of voltage stress; DC and AC voltage stresses. Two MIM capacitors have high capacitance density (8.1 fF/${\mu}m^2$ and 5.2 fF/${\mu}m^2$) over the entire frequency range and low leakage current density of ~1 nA/$cm^2$ at room temperature and 1 V. The charge trapping in the dielectric shows that the relative variation of capacitance (${\Delta}C/C_0$) increases and the variation of voltage linearity (${\alpha}$/${\alpha}_0$) gradually decreases with stress-time under two types of voltage stress. It is also shown that DC voltage stress induced greater variation of capacitance density and voltage linearity than AC voltage stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.687-692
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• 2011

Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

• Economic and Environmental Geology
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• v.40 no.6
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• pp.727-738
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• 2007

The present study investigation the geochemical characteristics of the stream sediments in the Unbong area was conducted to enable a understanding the natural background and a prediction the prospects of geochemical disaster as a result of that bed rocks(mylonitic granites, Kim et al., 1992). We systematically collected seventy three stream sediments samples by wet sieving along the primary channels. Major, trace and rare earth element(REE) concentrations, combined with mineralogical characteristics, were determined by XRD, XRF, ICP-AES and NAA analysis methods. Major element concentrations for the stream sediments in the Unbong area were $SiO_2\;36.94{\sim}65.39wt.%,\;Al_2O_3\;10.15{\sim}21.77wt.%,\;Fe_2O_3\;3.17{\sim}10.90wt.%,\;CaO\;0.55{\sim}5.27wt.%,\;MgO\;0.52{\sim}4.94wt.%,\;K_2O\;1.38{\sim}4.54wt.%,\;Na_2O\;0.49{\sim}3.36wt.%,\;TiO_2\;0.39{\sim}1.27wt.%,\;MnO\;0.04{\sim}0.22wt.%,\;P_2O_5\;0.08{\sim}0.54wt.%$. Trace and REE concentrations for the stream sediments were $Cu\;4.8{\sim}134ppm,\;Pb\;24.2{\sim}82.5ppm,\;Sr\;95.9{\sim}739ppm,\;V\;19.9{\sim}124ppm,\;Zr\;52.9{\sim}145ppm,\;Li\;25.2{\sim}3.3ppm,\;Co\;3.87{\sim}50.0ppm,\;Cr\;17.4{\sim}234ppm,\;Hf\;3.93{\sim}25.2ppm,\;Sc\;4.60{\sim}20.6ppm,\;Th\;3.82{\sim}36.9ppm,\;Ce\;45.7{\sim}243ppm,\;Eu\;0.89{\sim}2.69ppm,\;Yb\;1.42{\sim}5.18ppm$. According to the comparison of average major element concentrations, CaO, $Na_2O\;and\;K_2O$ contents are higher in stream sediments than in bed rocks(mylonitic granites, Kim et al., 1992) $Al_2O_3\;and\;SiO_2$ contents show good correlation both stream sediments and bed rocks(mylonitic granites, Kim et al., 1992). Yb and Eu in the stream sediments show a positive correlation with $SiO_2$. In contrast, the stream sediments display a negative correlation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.364-365
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• 2005

This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

• Economic and Environmental Geology
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• v.39 no.3 s.178
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• pp.329-342
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• 2006

The purpose of this study is to determine the geochemical characteristics for the stream sediments in the Konyang area. So we can estimate the environment contamination and understand geochemical disaster. We collect the stream sediments samples by wet sieving along the primary channels and slowly dry the collected samples in the laboratory and grind to pass a 200mesh using an alumina mortar and pestle for chemical analysis. Mineralogy, major, trace and rare earth elements are determined by XRD, XRE, ICP-AES and NAA analysis methods. For geochemical characteristics on the geological groups of stream sediments, the studied area was grouped into quartz porphyry area, sedimentary rock area, anorthosite area and gneiss area. Contents of major elements for the stream sediments in the Konyang area were $SiO_2\;41.86{\sim}76.74\;wt.%,\;Al_{2}O_{3}\;9.92{\sim}30.00\;wt.%,\;Fe_{2}O_{3}\;2.74{\sim}12.68\;wt.%,\;CaO\;0.22{\sim}3.31\;wt.%,\;MgO\;0.34{\sim}3.97\;wt.%,\;K_{2}O\;0.75{\sim}0.93\;wt.%,\;Na_{2}O\;0.25{\sim}1.92\;wt.%,\;TiO_{2}\;0.40{\sim}3.00\;wt.%,\;MnO\;0.03{\sim}0.21\;wt.%,\;P_{2}O_{5}\;0.05{\sim}0.38\;wt.%$. The contents of trace and rare earth elements for the stream sediments were $Cu\;7{\sim}102\;ppm,\;Pb\;15{\sim}47\;ppm,\;Sr\;48{\sim}513\;ppm,\;V\;29{\sim}129\;ppm,\;Zr\;31{\sim}217\;ppm,\;Li\;14{\sim}94\;ppm,\;Co\;5.6{\sim}32.1\;ppm,\;Cr\;23{\sim}259\;ppm,\;Cs\;1.7{\sim}8.7\;ppm,\;Hf\;2.1{\sim}109.0\;ppm,\;Rb\;34{\sim}247\;ppm,\;Sc\;4.5{\sim}21.9\;ppm,\;Zn\;24{\sim}609\;ppm,\;Sb\;0.8{\sim}2.6\;ppm,\;Th\;3{\sim}213\;ppm,\;Ce\;22{\sim}1000\;ppm,\;Eu\;0.7{\sim}5.3\;ppm,\;Yb\;0.6{\sim}6.4\;ppm$. Generally, the contents of $Al_{2}O_{3}\;and\;SiO_2$ had a good relationships with each other in rocks but it had a bad relationships in stream sediments for this study area. The contents of $Fe_{2}O_3$, CaO, MnO and $P_{2}O_{5}$ had a good relationships with major and minor elements in stream sediments of this study area. The contents of Co and V in the stream sediments had a good relationships with other toxic elements.

• Economic and Environmental Geology
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• v.42 no.3
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• pp.195-206
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• 2009

We investigated natural background and enrichment characteristics and predicted geochemical disaster for stream sediments in the Hamyang-Sancheong area. Stream sediments samples were collected 95 ea in study area. The stream sediments were well known that had not possibility of contamination effect and represented drainage basins. We got the major and hazardous elements concentrations by XRF, ICP-AES and NAA analysis methods. Acid decomposition for the ICP-AES has been used $HClO_4$ and HF with $200^{\circ}C$ heating at 1st and after that $HClO_4$ HF and HCl with $200^{\circ}C$ heating at 2nd stage. We could know the characteristics that concentration of Cu and Co decreased when concentration of $SiO_2$ increased in correlation analysis. The enrichment factor of the stream sediments was below 2 in study area. This result indicated that study area belonged to moderate enrichment. The stream sediments of Hamyang area were enriched in order of Pb>Th>Cr>V>Co>Cu and those of Sancheong area were enriched in order of Pb>Th>Cr>Co>V>Cu. The enrichment factor(E.F.) of the Pb, Cr, Co and V was similar between Hamyang and Sancheong area. The enrichment factor of the Th was higher in Hamyang area and that of the Cu was higher in Sancheong area. The enrichment factor of the Pb was highly enriched in all study area than earth crust mean. But we could know that study area was not exposed to the pollution of the Pb through the tolerable level.

• Economic and Environmental Geology
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• v.30 no.1
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• pp.1-14
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• 1997

The shales from the Euiseong area are interbedded along the bedding in Cretaceous Gyeongsang Supergroup, which are composed mainly of quartz, plagioclase, K-feldspar and associated with trace amount of biotite, muscovite, chlorite, pyrite, hematite, carbonate and clay minerals. The ratio of $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ in shales from the Shindong Group are ranged from 9.16 to 24.32 and from 1.70 to 5.97, and the Hayang Group ranged from 2.76 to 8.89 and from 0.42 to 2.74, which are negative correlated between $K_2O/Na_2O$ and $Al_2O_3/Na_2O$ against $SiO_2/Al_2O_3$ respectively. Those are suggested that controlled of mineral compositions in shales due to substitution and migration of elements by sedimentation and diagenesis. These shale formation were deposited in basin of terrestrial environments originated from the igneous rocks, and the REE of these rocks are not influenced with diagenesis and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, Zr versus Yb, the ratios of La/Ce (0.43 to 0.62) and Th/U (1.11 to 10.71). The narrow range in trace and REE element characteristics as Co/Th (0.63 to 1.92), La/Sc (1.98 to 5.90), Sc/Th (0.58 to 1.30), V/Ni (0.90 to 3.25), Cr/V (0.45 to 1.78), Ni/Co (1.88 to 6.67) and Zr/Hf (30.04~60.87) of these shales argues for inefficient mixing of the simple source lithologies during sedimentation. These rocks also show much variation in $La_N/Yb_N$ (6.90 to 17.02), Th/Yb (4.17 to 13.68) and La/Th (1.98 to 5.90), and their origin is explained by derivation from a mixture of intermediate to acidic igneous rocks.