• Journal of the Korean Ceramic Society
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• v.22 no.1
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• pp.19-24
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• 1985

The synthetic method was studied on the $SrTiO_3$ powder of pure and homogeneous ultra fine particle of $SrTiO_3$. Pure and ultra fine particle was synthesized from $Sr(OH)_2$.$8H_2O$ and Ti(OH) at 3$0^{\circ}C$~9$0^{\circ}C$ in the $N_2$ gas atmosphere.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1485-1487
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• 2002

The 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the 0.96Mg$TiO_3$-0.04Sr$TiO_3$ceramics with $V_2O_5$(5wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature, the grain size was increased and three types of grains were exhibited: larger circular grain, small square grain and lapth-shaped grain. In the case of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $15.24{\sim}18.55$, $22,890{\sim}42,100$GHz, -24.5${\sim}$+2.414ppm/$^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Clean Technology
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• v.23 no.1
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• pp.95-103
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• 2017

In this study, $ATiO_3$ (A = Ca, Sr, Ba) perovskite, which is the widely known for non $TiO_2$ photocatalysts, were synthesized using sol-gel method. And Ni was added at the A site of $ATiO_3$ by using that it is easy to incorporate. The physicochemical characteristics of the obtained $ATiO_3$ and Ni-$ATiO_3$ particles were confirmed using the X-ray diffraction (XRD) UV-visible spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), the $N_2$ adsorption-desorption isotherm measurement, and X-ray photoelectron spectroscopy (XPS). The $H_2$ was produced using the photolysis of MeOH. Using the Ni-$ATiO_3$ photocatalysts, $H_2$ production was higher than using the $ATiO_3$ photocatalysts. Especially, $273.84mmolg^{-1}$ $H_2$ was produced after 24 h reaction over the Ni-$SrTiO_3$. Also in the water (0.1 M KOH) with the Ni-$SrTiO_3$, $H_2$ production was $961.51mmolg^{-1}$ after 24 h reaction.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.19-24
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• 1985

The phtoelectrochemical porperties of $Nb_2O_5$, $Sb_2O_3$ and $V_2O_5$ doped and pure $SrTiO_3$ ceramic electodes were investigated. Shapes of I-V and I-λ characteristics of the pure $SrTiO_3$ ceramic electrode are similar to those of SrTiO3 single crystal electorde ; the anodic current strats at -0.9V (vs. Ag/AgCI) in 1 N-NaOH aqueous solution and the photoresponse appears at a wavelength of about 390nm and the quantum efficiency is about 3.5% at wavelength of 390nm under 0.5V vs. Ag/AgCl. Photocurrents of $Nb_2O_5$, $Sb_2O_3$ and $V_2O_5$ doped electrodes and $V_2O_5$ doped ceramic electrode appears at wavelength of 390nm and 500nm respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ thin films have attracted great interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2/Ar$ plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage=600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2 the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is $480{\AA}/min$ at 10 % $BCl_3$ to $Cl_2/Ar$. The change of Cl, B radical density measured by optical emission spectroscopy(OES) as a function of $BCl_3$ percentage in $Cl_2/Ar$. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2/Ar$. To study on the surface reaction of (Ba, Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion bombardment etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and $TiCl_4$ is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about 65~70$^{\circ}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.24-31
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• 2022

This study investigated microstructures, crystal structures, polarization, dielectric and electromechanical properties of 0.76Bi_1/2Na_1/2TiO₃-0.24SrTiO₃ (BNT-24ST)-based piezoceramcs by adding Li₂CO₃ and B₂O₃ (LB) as sintering aids for low-temperature sintering. All samples were successfully synthesized using conventional solid-state reaction method and sintered at 950, 1,000, 1,050, 1,100 and 1,175℃ for 2 hours. Without LB, specimens required sintering temperatures over 1,175℃ for sufficient densification, while the addition of 0.10-mol LB decreased the sintering temperatures down to 950℃. The average grain size and dielectric properties of BNT-24ST-10LB ceramics were enhanced with increasing sintering temperature. We found that the low-temperature sintered BNT-24ST piezoceramics by adding LB showed the d₃₃*value of 402 pm/V at 4 kV/mm after sintering at 1,050℃, which was better than that of high-temperature fired specimens sintered at 1,175℃ without LB (242 pm/V). We believe that the results of this study promise a candidate for low-cost multilayer ceramic actuator applications.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.652-656
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• 1998

$(Ba_{0.8-x}Sr_{0.2})Y_xTiO_3\;(BSYT)$ powders were prepared by the calcination of metal-oxalate precipitates, which were obtained by wet chemical method using Ba, Sr, Y and Ti-nitrates and oxalic acid. Yttrium content, sintering temperature and cooling rate were taken as experimental factors. Response surface method was applied to modelling of the room temperature resistivity of BSYT. The results indicated that the Yttrium content had larger effect on the room temperature resistivity and minimum room temperature resistivity was at Yttrium content of 0.24 mol%. The validity of a modelling equation was confirmed by comparing the measured room temperature resistivity with the calculated one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.24-29
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• 2002

In this paper, the microstructure and the dielectric properties of Sr$\_$1-x/CaxTiO$_3$(0$\leq$x$\leq$0.2)-based grain boundary layer ceramics were investigated. The sintering temperature and time were 1420∼152 0$\^{C}$ and 4 hours in N$_2$ gas, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca, but the average grain size was increased with increase of sintering temperature. The second phase foamed by the thermal diffusion of CuO from the surface leads to verb high apparent dielectric constant, $\xi$$\_$r/>50000 and low dielectric loss, tan$\delta$<0.05. X-ray diffraction patterns of Sr$\_$1-x/CaxTiO$_3$ exhibited cubic structure, and the peaks shifted upward and the peak intensity were decreased with x. This is due to the lattice contraction as Sr is replaced by Ca with a smaller ionic radius. The specimens treated thermal diffusion for 2hrs in 1150$\^{C}$ exhibited nonlinear current-voltage characteristic, and its nonlinear coefficient(a) was overt 7.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.689-695
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• 1991

Dielectric properties of Ba1-$\chi$Sr$\chi$Ti1-yCayO3-y ceramics, where Sr and Ca were doped to Ba-site and Ti-site within the range of 0 x 0.24 and 0 y 0.05, respectively, were investigated. The substitution of Ca for Ti, which maintained the high resistivity of these formulations after sintering in a reducing atmosphere, was confirmed. Ca addition decreased the tetragonality c/a, increased the unit cell volume, and lowered Curie temperature, which were attributed to the occupancy of Ca2+ ions on Ti-sites. The lowering of Curie temperature by Ca addition was affected by the substitution of Sr for Ba-site; within 2 mol% of Ca, Curie temperature was lowered at a rate of 2$0^{\circ}C$ and 16$^{\circ}C$ per mol% of Ca at x=0 and x=0.08, respectively. Whereas the resistivity of the formulations without Ca was reduced to 107 {{{{ OMEGA }}cm, when sintered at low oxygen partial pressure of 10-9 MPa, the resistivity value higher than 1011 {{{{ OMEGA }}cm was maintained for the formulations containing Ca more than 0.5 mol%. Dielectric loss factor, tan$\delta$, was about 1% for most formulations.