• Clean Technology
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• v.24 no.3
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• pp.249-254
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• 2018

In order to improve the photo conversion efficiency (${\eta}$) of dye-sensitized solar cells (DSSCs), the electrospun $TiO_2$, $SiO_2$, $ZrO_2$ and $SnO_2$ nanofibers were added into the hydrothermally prepared $TiO_2$ nanoparticles for application to a photoelectrode for DSSCs. The $TiO_2$ nanofiber added photoelectrode exhibited a higher photo current density ($J_{sc}$) compared to the bare $TiO_2$ nanoparticles, which is caused from acceleration of the transfer of excited electron from dye molecule due to the nanofiber structure. The DSSCs with $SiO_2$ nanofibers shows a higher open circuit voltage ($V_{oc}$) of 0.67 V and the highest photo conversion efficiency was found to be 6.24%.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.04a
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• pp.24-24
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• 2006

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.398-402
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• 2000

Three kinds of $Al_3Ti-Cr$ alloys, namely, $Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{59}Ti_{26}Cr_{15}$, were prepared by induction melting followed by the thermomechanical treatment. The corrosion behavior in 3.5% NaCl solution and the high-temperature oxidation behavior at 1000, 1100 and $1200^{\circ}C$ for the prepared alloys were investigated. Electrochemical results indicated increased resistance to localized corrosion with increasing Cr content. Cr additions were found to prevent passive film from undergoing brittle fracture. XPS results revealed the passive films of $Al_3Ti-Cr$ alloys were composed mainly of $Al_2O_3$ that coexisted with $TiO_2$ and $Cr_2O_3$. The overall oxidation resistance of the prepared alloys were excellent. Specifically, the oxidation resistance increased in the order of $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{67}Ti_{25}Cr_8$. As the Al content in the base alloys increased, the $Al_2O_3$ formation was facilitated leading to the increased oxidation resistance.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.969-973
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• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.194-197
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• 1991

In this study, $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$, added $MnO_2$ (0-0.30[mol%]) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were $1250[^{\circ}C]$, 2[hr], respectively. In the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) specimens, relative dielectric constant and dielectric loss were minimum values 3.52, 0.003, respectively, and Curie temperature were highest values $256[^{\circ}C]$. Pyroelectric coefficient and voltage responsivity of the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$, and added $MnO_2$ (0.24[mol%]) specimen were good values, $6.73{\times}10^{-8}[C/cm^2K],\;125[v/W]$, respectively. Figure of merit of pyroelectric current, voltage and detectivity of the specimen, $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) were good values $2.714{\times}10^{-8}[Ccm/J],\;7.706{\times}10^{-11}[Ccm/J],\;2.640{\times}10^{-8}[Ccm/J]$, respectively. Voltage responsivity of the $(Pb_{0.99}La_{0.01})[(Sb_{1/2}Sn_{1/2})_{0.10}Ti_{0.25}Zr_{0.65}]O_3$ added $MnO_2$ (0.24[mol%]) specimens were decreased with increasing the chopper frequency.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.199-203
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• 1998

$Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1485-1487
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• 2002

The 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the 0.96Mg$TiO_3$-0.04Sr$TiO_3$ceramics with $V_2O_5$(5wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature, the grain size was increased and three types of grains were exhibited: larger circular grain, small square grain and lapth-shaped grain. In the case of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $15.24{\sim}18.55$, $22,890{\sim}42,100$GHz, -24.5${\sim}$+2.414ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.70-73
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• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.484-490
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• 1987

Diffusion coupling experiment was done to study expansion of body and soild reaction in BaCO3-TiO2 system. Specimen of BaCO3 and TiO2 was formed with Pt-mark's method. Each specimen was fired at interval of 25℃ from 900℃ to 1000℃ for 2hrs. After that, specimen was fixed with resin and polished. Product layers of specimen were observed with SEM and EDS. The result were following; 1. Diffusion component is Ba2+, which diffuse toward TiO2. 2. Large crack between layer of BaCO3 and Ba2TiO4 was generated because of difference of thermal expansion coefficient. 3. Ba2TiO4 is formed to TiO2 body by the reaction of BaTiO3 and BaO and its structure is very porous. 4. BaTiO3 changes immediately to Ba2TiO4 by the reaction of BaO. But BaTiO3 which formed by the reaction of TiO2 and Ba2TiO4 exsists as layer because the diffusion distance of Ba2+ is far.