• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.227-232
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• 2000

$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.4
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• pp.451-463
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• 2004

The performance of disk-type catalytic filters impregnated by TiO$_2$ or TiO$_2$-3Al$_2$O$_3$ㆍ 2SiO$_2$ supports and V$_2$O$_{5}$ catalyst was evaluated for selective catalytic reduction (SCR) of NO with ammonia as a reductant. XRD, FT -IR, BET and SEM were used to characterize the catalytic filters prepared in this work. Optimal V$_2$O$_{5}$ loading and reaction temperature for V$_2$O$_{5}$/TiO$_2$ catalytic filters were 3-6 wt.% and 350-40$0^{\circ}C$ at GHSV 14,300 $hr^{-1}$ in the presence of oxygen, respectively. With increasing the V$_2$O$_{5}$ loading from 0.5 to 6 wt%, NO conversion increased from 24 to 96% at 40$0^{\circ}C$ and 14.300$hr^{-1}$, and maintained at 80% over in the V$_2$O$_{5}$ loading range of 3-6 wt.% and then dropped at V$_2$O$_{5}$ loading of 7wt.% over. In comparing V$_2$O$_{5}$/ TiO$_2$ and V$_2$O$_{5}$/ TiO$_2$-3Al$_2$O$_3$ㆍ2SiO$_2$ catalytic fillers, which have same 3wt.% V$_2$O$_{5}$ loading, the V$_2$O$_{5}$/ TiO$_2$-3A1$_2$O$_3$ㆍ2SiO$_2$ catalytic filter showed higher activity than V$_2$O$_{5}$/ TiO$_2$ catalytic filter, but higher differential pressure drops owing to its low air permeability. low air permeability.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.710-714
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• 2014

The effect of titanium dioxide ($TiO_2$) on the properties of color conversion glasses was examined for glasses based on $BaO-ZnO-B_2O_3-SiO_2$. One glass sample, containing 25 mol% of each component, was used as a reference; the other three glass samples contained 1, 3, and 5 mol% $TiO_2$, respectively. The four color conversion glass samples were prepared by sintering a mixture of glass frits and a $YAG:Ce^+$ phosphor. The characteristics of the color conversion glass samples, such as luminous efficacy, luminance, CIE (Commission International de I'Eclairage) chromaticity, CCT (Correlated Color Temperature), and CRI (Color Rendering Index) were analyzed according to the PL spectrum. The refractive index of the glass samples was found to increase with the titanium dioxide content. In conclusion, luminous efficacy of color conversion glasses increased as the content of $TiO_2$ was raised in the glass matrix.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.406-414
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• 1991

The composition of base glass was selected as MgO 8, Al2O3 24, SiO2 68 in weight percent. TiO2 and ZrO2 were added to the base glass to investigate their effects as nucleating agents. In the case of ZrO2 addition, the optimum temperature for nucleation, which was related to the precipitation of tetragonal ZrO2, was 80$0^{\circ}C$. The optimum growth condition for the crystal was 87$0^{\circ}C$ for 8 hrs, and the major crystal phases precipitated in the samples were $\beta$-quartz ss. and mullite. The light transmissivity turned out to be around 80 per cent. On the other hand, when the TiO2 was added, it was difficult to determine the nucleating temperature, because the samples turned easily into translucency during the heat treatment. Therefore, it was almost impossible to retain transparency in the samples. The light transmissivity was below 30 per cent.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Transactions of Materials Processing
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• v.15 no.3 s.84
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• pp.213-219
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• 2006

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5\;and\;70SiO_2-10CaO-24Na_2O-10TiO_2$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. XRD, Nano-indenter and SEM etc., irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value($4.4{\sim}4.56^*10-3Pa$) of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2{\sim}1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.479-481
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• 2000

The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.143-150
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• 2000

Ferroelectric SrxBi2+yTa2O9+$\alpha$ thin films with various compositions(x=0.7, 0.8, 1, y=0.3, 0.4) were prepared by sol-gel method. The film with moled ratio of 0.8:2.3:2.0 in Sr/Bi/Ta, which was deposited on Pt/SiO2/Si (100), showed better ferroelectric properties than other films. To investigate substrate effects, the same compositions were spin coated on Pt/Ti/SiO2/Si (100) substrates. At an applied voltage of 5V, the dielectric constant($\varepsilon$r), remanent polarization (2Pr) and coercive field (Ec) of the Sr0.8Bi2.3Ta2O9+$\alpha$ thin film prepared on Pt/Ti/SiO2/Si (100) were about 296, 24$\mu$C/$\textrm{cm}^2$ and Ec of 49kV/cm respectively. Both SBT films firred at 80$0^{\circ}C$ revealed no fatigue up to 1010 cycles. Retention characteristics of these capacitors showed no degradation up to 104 sec.