• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.93-98
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• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.43-47
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• 2014

NiO-doped hibonite pigments were synthesized by the solid state method to get stabilized blue color pigment in both oxidation and reduction atmospheres. Optimum substitution condition with NiO for hibonite blue pigment was investigated. Experimental results were comparable to those of previous cobalt-minimization studies performed with other phosphate- or oxide-based cobalt-containing ceramic pigments (having olivine ($Co_2SiO_4$), spinel ($CoAl_2O_4$), or with co-doped willemite ($(Co,Zn)_2SiO_4$) structures). Composition was designed varying the NiO molar ratio increasing with $SnO_2$. The optimum substitution content is 0.93 mole NiO with 0.75mole $SnO_2$. The characteristics of the synthesized pigment were analyzed by XRD, Raman spectroscopy, SEM, and UV-vis. Synthesized pigment was applied to a lime-barium glaze with 10 wt% each and fired at an oxidation atmosphere of $1250^{\circ}C/1h$ and a reducing atmosphere $1240^{\circ}C/1h$. Blue color was obtained with $L^*a^*b^*$ values at 43.39, -6.78, -18.20 under a reducing atmosphere and 41.66, -6.36, -14.7 under and oxidation atmosphere, respectively.

• Journal of the Korean Society for Marine Environment & Energy
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• v.12 no.4
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• pp.302-306
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• 2009

9 kinds of nanoparticle used for this study was a particle with the size of less than 100 nm of diameter, and Artemia sp. cyst examined what kind of influence to have upon the process hatched out in nauplius. 82% hatched in nauplius at the opposition ward where a nanoparticle wasn't added after 24 time course. AGZ020, Nano silver, P-25, Sb and SnO nanoparticle showed hatching rate of 18%, 20%, 13%, 50% and 0% respectively by the 20mg/L density, and it became clear that a harmful effect is big, but I had a harmful effect compared with the opposition ward by 75%, 60%, 73% and 73% respectively by Ag-$TiO_2$, In, Sn and Zn nanoparticle, but a feeble thing was known relatively compared with AGZ020, Nano silver, P-25, Sb and SnO nanoparticle. The difference has caused this with the ingredient a nanoparticle has. Ag is included 2 % and AGZ020, Nano silver and P-25 nanoparticle are used widely as anti-fungus agent, and the SnO nanoparticle which became combination is a light catalyst pill, and oxygen is used for a Sn particle. This and others, a possibility that use is generalized and flows into aquatic environment in sequence the home electronics, functionality cosmetics, anti-fungus agent and a light catalyst pill at present becomes high for nanoparticles and others. The anxiety which has an influence on the ecology world in the water with this can be generated, so I'd have to study the potential danger a nanoparticle has continuously.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.330-332
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• 2009

Highly stable bottom gate thin film transistors(TFTs) with a zinc indium tin oxide(Zn-In-Sn-O:ZITO) channel layer have been fabricated by rf-magnetron co-sputtering using a indium tin oxide(ITO:90/10), a tin oxide and a zinc oxide targets. The ZITO TFT (W/L=$40{\mu}m/20{\mu}m$) has a mobility of 24.6 $cm^2$/V.s, a subthreshold swing of 0.12V/dec., a turn-on voltage of -0.4V and an on/off ratio of >$10^9$. When gate field of $1.8{\times}10^5$ V/cm was applied with source-drain current of $3{\mu}A$ at $60^{\circ}C$, the threshold voltage shift was ~0.18 V after 135 hours. We fabricated AM-OLED driven by highly stable bottom gate Zn-In-Sn-O TFT array.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Journal of the Korean Applied Science and Technology
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• v.33 no.4
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• pp.734-740
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• 2016

The micron-sized indium zinc tin oxide (IZTO) particles were prepared by spray pyrolysis from aqueous precursor solution for indium, zinc, and tin and organic additives such as citric acid (CA) and ethylene glycol (EG) were added to aqueous precursor solution for indium, zinc, and tin. The obtained IZTO particles prepared by spray pyrolysis from the aqueous solution without organic additives had spherical and filled morphologies, whereas the IZTO particles obtained with organic additives had more hollow and porous morphologies. The micron-sized IZTO particles with organic additives were changed fully to nano-sized IZTO particles, whereas the micron-sized IZTO particles without organic additives were not changed fully to nano-sized IZTO particle after post-treatment at $700^{\circ}C$ for 2 hours and wet-ball milling for 24 hours. Surface resistances of micron-sized IZTO's before post-heat treatment and wet-ball milling were much higher than those of nano-sized IZTO's after post-heat treatment and wet-ball milling. From IZTO with composition of 80 wt. % $In_2O_3$, 10 wt. % ZnO, and 10 wt. % $SnO_2$ which showed a smallest surface resistance IZTO after post-heat treatment and wet-ball milling, thin films were deposited on glass substrates by pulsed DC magnetron sputtering, and the electrical and optical properties were investigated.