• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.209-215
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• 1997

Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.173-176
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• 1997

The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6$0^{\circ}C$ . InN thin films deposited on the AIN(60min.)/Si(100) substrates arid AIN(120min.)/Si(100) substrates showed remarkably high crystal quality and electrical properties. It is known that AIN buffer layer is to decrease free energy at interface between InN film and Si substrate, and then promoting lateral growth of InN films.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.676-681
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• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

• Journal of the Korean institute of surface engineering
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• v.38 no.6
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• pp.207-211
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• 2005

In this work a multi-layered nanostructured TiAIN/CrN superlattice coatings was synthesized using closed-field unbalanced magnetron sputtering method and the relationships between their superlattice period (1), micro-structure, hardness and elastic modulus were investigated. In addition, wear test at $500^{\circ}C$ and oxidation resistance test at $900^{\circ}C$ were performed to investigate high temperature properties of these thin films. The coatings were characterized in terms of microstructure and mechanical properties by transmission electron microscopy (TEM) and nano-indentation test. Results from TEM analysis showed that superlattice periods was inversely proportional to the jig rotation speed. The maximum hardness and elastic modulus of 37 GPa and 375 GPa were observed at superalttice period of 6.1 nm and 4.4 nm, respectively. An higher value of microhardness from TiAIN/CrN thin films than either TiAIN (30 GPa) or CrN (26 GPa) was noted while the elastic modulus was approximately an average of TiAIN and CrN films. These enhancement effects in superlattice films could be attributed to the resistance to dislocation glide across interface between the CrN and TiAIN layers. Much improved plastic deformation resistance ($H^3/E^2$) of 0.36 from TiAIN/CrN coatings was observed, compared with 0.15 and 0.16 from TiAIN and CrN, respectively. Also the wear resistance at $500^{\circ}C$ was largely increased than those of single TiAIN and CrN coatings and TiAIN/CrN coatings showed much reduced weight gain after exposure at $900^{\circ}C$ for 20 hours.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.13-16
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• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.509-512
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• 2001

Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.464-466
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• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.183-187
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• 2005

The quaternary ZrCrAIN nanocomposite thin films are synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS). Microstructure and mechanical properties of ZrCrAIN nanocomposite thin films are studied. Grain refinement of ZrCrAIN nanocomposite thin film is occurred by controlling $N_{2}$ partial pressure. Maximum hardness value according to the various $N_{2}$ partial pressures is obtained at 45 GPa. It is also conformed that critical value of the grain size (d) needs to achieve the maximum hardness.