• Title/Summary/Keyword: AMLCD

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Development of 2.32-inch $320{\times}350$ LTPS TFT-LCD for Advanced Mobile Phones Using SLS Technology

  • Zhang, Lintao;Kang, Myung-Koo;Lee, Joong-Sun;Park, Jong-Hwa;Joo, Seung-Yong;Moon, Kuk-Chul;Kim, Il-Kon;Kim, Sung-Ho;Park, Kyung-Soon;Yoo, Chun-Ki;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1035-1037
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    • 2005
  • 2.32-inch $320{\times}350$ TFT-LCD with high resolution (206PPI) for advanced mobile phones could be successfully developed. The compact pixel design based on PMOS SLS technique is used to achieve this high resolution. Gate driver and part of data driver are integrated onto the glass substrate. High brightness (170cd) and contrast ratio (400:1) were obtained with very low flickering and crosstalk levels.

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Development of World's Largest 21.3' LTPS LCD using Sequential Lateral Solidification(SLS) Technology

  • Kang, Myung-Koo;Kim, Hyun-Jae;Chung, Jin-Koo;Kim, Dong-Beom;Lee, Su-Kyung;Kim, Cheol-Ho;Chung, Woo-Seok;Hwang, Jang-Won;Joo, Seung-Yong;Meang, Ho-Seok;Song, Seok-Chun;Kim, Chi-Woo;Chung, Kyu-Ha
    • Journal of Information Display
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    • v.4 no.4
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    • pp.4-7
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    • 2003
  • The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT-LCD with half the number of data driver IC's that is typically used in a-Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/$cm^2$.

Development of World's Largest 21.3' LTPS LCD Using Sequential Lateral Solidification (SLS) Technology

  • Kang, Myung-Koo;Kim, H.J.;Chung, J.K.;Kim, D.B.;Lee, S.K.;Kim, C.H.;Chung, W.S.;Hwang, J.W.;Joo, S.Y.;Maeng, H.S.;Song, S.C.;Kim, C.W.;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.241-244
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    • 2003
  • The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Successful integration of gate circuit, transmission gate and level shifter was performed in a large area uniformly. Uniformity and high performance from high quality grains of SLS technology make it possible to come true a uniform large size LTPS TFT-LCD with half number of data driver IC's used in typical a-Si LCD. High aperture ratio of 65% was obtained using an organic inter insulating method, which lead a high brightness of 500cd/cm2.

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TFT-LCD Employing RGBW Color

  • Lee, Baek-Woon;Song, Keun-Kyu;Yang, Young-Chol;Park, Cheol-Woo;Oh, Joon-Hak;Chai, Chong-Chul;Choi, Jeon-Gye;Roh, Nam-Seok;Hong, Mun-Pyo;Chung, Kyu-Ha;Lee, Seong-Deok;Kim, Chang-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1103-1107
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    • 2004
  • Last year, we introduced a TFT-LCD with RGBW color system. The primary advantage of the RGBW system is that its optical efficiency is at least 50% higher than the RGB system. However, it is not a simple task to incorporate the new color system into the infrastructure of the RGB system: the driving circuitry, fabrication of color filter, and color conversion. In this report, the practical hurdles are discussed and the solutions are presented.

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Recent Trend of Low Temperature Poly Silicon Technologies in TFT-LCD

  • Kim, C.W.;Kim, H.J.;Lee, H.G.;Min, H.G.;Hwang, J.W.;Cho, S.W.;Ryu, C.K.;Lee, C.;Kang, M.K.;Chung, K.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.46-49
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    • 2002
  • Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.

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High Current Stress characteristics on Sequential Lateral Solidification (SLS) Poly-Si TFT

  • Jung, Kwan-Wook;Kim, Ung-Sik;Kang, Myoung-Ku;Choi, Pil-Mo;Lee, Su-Kyeong;Kim, Hyun-Jae;Kim, Chi-Woo;Jung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.673-674
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    • 2003
  • The reliability of TFT, crystallized by sequential lateral solidification (SLS) technology, has been studied High current damage is characterized by high gate bias (-20V) and drain bias (-10V). It is found that performance of SLS TFTs is enhanced by high current stress up to 300 sec of stress time for 20/8 (W/L) N-TFT. After that, TFT performance is degraded with the increase of the stress time. It is speculated from the experimental data that SLS TFTs initially contain a number of unstable defect states. Then, the defect states seem to be cured by high current stress.

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New Material Architecture and Its Process Integration for a-Si TFT Array Manufacturing

  • Song, Jean-Ho;Park, Hong-Sick;Kim, Sang-Gab;Cho, Hong-Je;Jeong, Chang-Oh;Kang, Sung-Chul;Kim, Chi-Woo;Chung, Kyu-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.552-555
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    • 2002
  • In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

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