• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.889-892
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• 2004

We developed a high performance bottom contact, organic thin-film transistor (OTFT) array on plastic using a self-organized process. The effect of OTS treatment on the PVP gate insulator for the performance of OTFT on plastic has been studied The OTFT without OTS exhibited a field-effect mobility of 0.1 $cm^2$/Vs on/off current ratio of > $10^7$. On the other hand, OTFT with OTS, exhibited a field-effect mobility of 1.3 $cm^2$/Vs and on/off current ratio of>$10^8$.

• International Journal of Automotive Technology
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• 제6권3호
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• pp.293-303
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• 2005

Bonded dissimilar materials are being increasingly used in automobiles, aircraft, rolling stocks, electronic devices and engineering structures. Bonded dissimilar materials have several material advantages over homogeneous materials such as high strength, high reliability, light weight and vibration reduction. Due to their increased use it is necessary to understand how these materials behave under stress conditions. One important area is the analysis of the stress intensity factors for interface cracks emanating from circular holes in bonded dissimilar materials. In this study, the bonded scarf joint is selected for analysis using a model which has comprehensive mixed-mode components. The stress intensity factors were determined by using the boundary element method (BEM) on the interface cracks. Variations of scarf angles and crack lengths emanating from a centered circular hole and an edged semicircular hole in the Al/Epoxy bonded scarf joints of dissimilar materials are computed. From these results, the stress intensity factor calculations are verified. In addition, the relationship between scarf angle variation and the effect by crack length and holes are discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.449-451
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• 2000

Crosstalk is the primary cause of image distortion in active matrix liquid crystal displays (AMLCD). Crosstalk produces voltage errors that limit gray scale fidelity and consequently, degrades display resolution, contrast ratio, color fidelity, and image quality. In this study, crosstalk phenomena of some methods to compensate level shift voltages has been simulated. This will be contributed to find the way to design the excellent image quality of the TFT-LCDs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1633-1635
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• 1997

For AMLCD pixel switching device, poly-Si TFT has the advantage of high field effect mobility over a-Si TFT. However, it also has some disadvantage such as large leakage current and more masking steps. We propose a new Inverse Staggered poly-Si TFT with a-Si offset. We have fabricated the new device and verified high ON/OFF current ratio. The device has lower leakage current level than the conventional Inverse Staggered poly-Si TFT and the same number of masking steps compared with conventional a-Si TFT's.

• 한국응용과학기술학회지
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• 제19권3호
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• pp.245-249
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• 2002

A (disk-like liquid crystal (DLC) monomer/liquid crystals(LCs)/chiral dopant/dichroic dye) composite was irradiated with ultraviolet (UV) light. The (DLC network/LCs/chiral dopant/dichroic dye) was formed in the homeotropically oriented smectic A(SA) phase by the surface orientation treatment and the electric field. A focal-conic texture exhibiting strong light scattering appeared in the heat-induced chiral nematic phase(N${\ast}$) of the composite upon heating. Thermo-recording in the composite system has been realized by using a He-Ne laser. The laser irradiation was induced the phase transitions from SA phase to chiral nematic(N${\ast}$) phase in the composite system.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1323-1326
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• 2007

A new driving method employing 2-dimensional spatial averaging is proposed. This method successfully eliminates the vertical line artifact caused by luminance difference from unbalanced charging voltage between polarities. This spatial averaging method can secure charging time, minimize driver heating, and achieve higher display quality.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.197-200
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• 2008

We propose a novel n-type a-Si:H TFT pixel circuit which is proper to AMOLED display for the large size and high resolution. Proposed pixel circuit will be suit to panel for the high resolution because of different threshold sampling method. Driving method of proposed pixel circuit is very simple like an AMLCD. Our simulation indicates that the proposed pixel circuit can compensate the Vth shift and IR rising of power line so that provide better quality image.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.451-458
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• 2006

The Chair of Display Technology at the University of Stuttgart develops various technologies for active matrix applications. Last year we presented an LTPS active matrix process without the need for ion implantation. This process is compared to other AM processes and the technological demands for different applications are discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1425-1428
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• 2006

We have proposed a novel cleaning technology with organic nanoparticles for high-performance TFT array. The surface of the TFT layer becomes more hydrophilic after cleaning by the nanoparticles. This is concluded from the comparison of contact angles for the samples cleaned by various methods. It is found that the drain currents in the subthreshold and off-state regions are less than those for the TFTs cleaned with conventional method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method