• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1442-1444
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• 2001

A new low-temperature poly-Si TFT employing a counter-doped lateral body terminal is proposed and fabricated, in order to enhance the stability of poly-Si TFT driving circuits. The LBT structure effectively suppresses the kink effect by collecting the counter-polarity carriers and suppresses the hot carrier effect by reducing the peak lateral field at the drain junction. The proposed device is immune to dynamic stress, so that it is suitable for low voltage and high speed driving circuits of AMLCD.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1462-1464
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• 1998

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.163-166
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• 2002

We studied the growth of large-grain pentacene film by organic vapour phase deposition. The optimizations of the growth of pentacene are carried out by varying the gas pressure in the reactor and substrate temperature. We found that the grain size depends strongly on the gas pressure in the reactor. The grain size of $20{\mu}m$ has been obtained at the gas pressure of 200 Torr. The film was found to be strongly (001) oriented and its grain size decreases with decreasing the gas pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.260-260
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• 2010

현대 사회가 고도의 정보화 사회로 변화하는 가운데 능동행렬 액정 표시 소자(AMLCD : Active Matrix Liquid Crystal Display)는 정보 디스플레이 분야에서 없어서는 안될 중요한 위치를 차지하게 됐다. AMOLED는 자체발광형이므로 LCD에 비해 시야각, contrast, 시인성이 우수하며, 화소를 낮은 전류 밀도로 구동시킨다는 장점이 있다. OLED 소자는 각 화소를 구동할 수 있는 박막 트랜지스타가 필요하며, OLED 소자와 결합된 TFT의 연구도 진행되고 있다. 더욱이 모바일 소자에서 낮은 구동 전압과 비용의 절감을 위해 System On Panels (SOP)에 대한 연구가 또한 진행되고 있다. LCD 패널위에 콘트롤러와 메모리와 같은 소자를 직접화시킴으로써 액정 표시 장치를 소형화시킬 수 있으며 신뢰성을 향상시킬 수가 있다. 본 연구에서는 SOP를 위한 ELA 방법을 통하여 결정화한 poly-Si TFT memory를 제작하여 전기적 특성을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.223-224
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• 2000

As technology level of TFT-LCD advances, application to TV becomes an emerging important area for LCD makers. In this paper, we review current LCD technology level to be used in TV such as liquid crystal response behavior, color accuracy, contrast ratio, brightness and panel size. Based on the understanding of current limitations in LCD compared with CRT, the improvement plan to render 'near perfect motion picture' reproduction with LCD is proposed. Digital TV is a great opportunity for digital LCD panels, but we have to solve remaining technical and cost issue in order to be competitive with other large size TV technologies such as PDP, CRT or projection type. In preparing the upcoming digital TV era with advanced TFT-LCD, the hurdles and prospect of larger size LCD-TV panels will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.693-696
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• 2009

The ray-tracing technique was used to optimize the light guide plate for the purpose of improving the on-axis luminance on the edge-lit backlights. One-dimensional prisms and engraved V-shaped patterns were applied to the upper and the lower surfaces of the light guide plate, respectively. By optimizing the apex angles of these micro-structures, as well as the shape of the reverseprism film put over the light guide plate, highly-collimated light-output distribution could be obtained on the backlight, which may contribute to the development of mobile LCD's with low power consumption.

• Ceramist
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• v.21 no.1
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• pp.44-54
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• 2018

Oxide semiconductor has been spotlighted as a channel material of TFTs in AMLCD as an alternative to Si, due to high mobility ( > $5cm^2/Vs$). It is also one of the strong candidates for TFTs in AMOLED because of high bias stability at amorphous phase. Beyond the advantages mentioned above, oxide semiconductor has many strengths such as transparency, low fabrication temperature and relatively low fabrication cost. For those reasons, the application of oxide semiconductor is not limited to display but can be extended to new types of electronics, for example, transient electronics for human implantable devices. From this context, oxide materials that have been used as semiconductor and insulator at transient electronics are investigated respectively, and conductor and substrate candidates are also explained, since transient electronics require systematic consideration beyond individual oxide films.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.86-96
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• 2002

Oligomer type anionic surfactants(RmM-Na or RmD-Na} were synthesized from $C_{8}{\sim}C_{16}$ long chain alkylvinylether and maleic anhydride (or maleic diethylether). And also their fluorescent anionic surfactants (RmF- Na) were obtained from alkali neutralization which opens the lactone ring of the condensing materials produced by maleic anhydride alkylvinylether copolymer and 3-aminophenol. The measurement results for the surface active properties of water soluble oligomer type anionic surfactants with fluorescent structure (RmF-Na) exhibited a remarkable surface tension lowing property, foam breaking property, and a ernulsing power.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.59-63
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• 2007

The CNTs are the most extensively studied material which are characterized by the complete property of matter, structure, and the large thermal conductivity (thermal conductivity of CNTs ~>2000W/mK vs. thermal conductivity of Aluminum ~> 204W/mK). Thus, they are successfully applied to the various fields. However, due to the strong agglomeration caused by the van der waal's force, their applications are limited. In the present study, a new method for CNTs dispersion was developed by using the mechanical dispersion, acid treatment, and then Cu was coated. This process produces CNTs/Cu nanocomposite powders, whereby the CNTs are homogeneously located within the Cu powders. The electrical properties of the CNTs/Cu nanocomposite were investigated.