• 제목/요약/키워드: AMLCD

검색결과 103건 처리시간 0.023초

Al-doped ZnO 투명 전도성 박막(TCO)의 전기적 광학적 특성 (Electrical and Optical Properties of Al-doped ZnO Thin Films)

  • 홍윤정;이규만;김인우
    • 반도체디스플레이기술학회지
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    • 제6권3호
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    • pp.35-39
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    • 2007
  • ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

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용액공정 기반의 Zinc Oxide 박막 트랜지스터의 제작 및 특성 평가

  • 황영환;서석준;전준혁;배병수
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.25.2-25.2
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    • 2009
  • 최근 아연산화물과 같은 무기산화물 박막 트랜지스터를 디스플레이의 구동 소자, RFID, 스마트 창으로 활용하기 위한 연구가 많이 이루어지고 있다. 특히, 산화아연 박막 트랜지스터는 기존의 비정질 실리콘이나 저온 제작된 다결정 실리콘을 active layer로 사용해 제작된 소자에 비하여 AMOLED나 AMLCD를 구동하기 충분한 전자 이동도, 환경적으로 안정한 특성을 보이고 비교적 저렴한 가격으로 제작 가능하며 넓은 밴드갭으로 인하여 가시광선 영역에서 투명한 특성을 보인다. 본 연구에서는 Zinc acetate dehydrate를 전구체로 사용하고 ethanolamine 을 솔 안정화제로 사용하여 간단하고 경제적인 솔-젤 방법을 통하여 Zinc Oixde (ZnO)를 active layer로 사용한 박막 트랜지스터를 제작하였다. ZnO 박막 트랜지스터는 전구체 용액을 기판 위에 스핀 코팅한 후 열처리 과정을 통하여 제작되었고 제작된 ZnO 박막 트랜지스터는 가시광선 영역에서 높은 투과도 (>90%) 를 보였다. 산화 아연 박막 트랜지스터의 특성을 향상 시키기 위하여 전구체 용액의 농도 조절, ZnO 박막의 두께 조절, 열처리 온도의 조절 등과 같은 연구를 수행하였다. 여러 공정 조건의 변화를 통하여 최적화된 ZnO 박막 트랜지스터는 전하 이동도가 9.4 cm^2/Vs, sub-threshold slope이 3.3 V/dec 그리고 on-to-off current ratio가 5.5${\times}$10^5로 디스플레이 소자를 구동하기 충분한 특성을 보였다.

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Joul-heating induced crystallization (JIC) for LTPS TFT-Backplanes

  • 홍원의;노재상
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.244-244
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    • 2010
  • 최근 활발히 연구되고 있는 AMOLED는 평판 디스플레이 분야를 이끌어 갈 차세대 선두 주자로 크게 주목 받고 있다. AMOLED는 전압 구동 방식인 AMLCD와 다르게 전류 구동 방식으로 a-Si TFT 보다 LTPS-TFT 사용이 요구되며, 대면적 기판으로 갈수록 결정립의 균일도가 매우 중요한 인자로 작용한다. 현재 양산이 가능한 AMOLED는 핸드폰이나 15인치 TV정도로 크기가 소형이며 대형 TV나 컴퓨터 모니터 등을 양산하기 위해 많은 방법이 시도되고 있다. 양산체제에서 사용되는 결정화 방법으로는 ELC가 가장 많은 부분을 차지하고 있다. 그러나 레이저를 사용하는 ELC 방법은 대면적으로 갈수록 레이저 빔 자체의 불균일성, shot to shot 불균일성, 레이저빔 중첩의 부정확도 등으로 인한 균일도의 부정확성이 커짐으로 인한 mura 현상이 나타나고 레이저 장비의 사용에 대한 비용 부담을 피할 수 없다. 따라서 non-laser 방식에 결정화 방법이 요구되나 SPC 경우는 상대적으로 고온에서 장시간이 걸리고, MIC 뿐만 아니라 MIC 응용 방법들은 금속 오염에 대한 문제가 발생하고 있는 실정이다. 이러한 문제로 인하여 결정립 크기의 균일도가 우수한 다결정 실리콘 박막을 제조하는 신기술에 대한 필요성이 매우 높은 실정이다. 본 연구에서는 비정질 실리콘 박막 상부 혹은 하부에 도전층을 개재하고, 상기 도전층에 전계를 인가하여 그것의 주울 가열에 의해 발생한 고열로 비정질 실리콘 박막을 급속 고온 고상 결정화하는 방법에 관한 기술인 JIC (Joule-heating Induced Crystallization) 결정화 공정을 개발하였다. 본 공정은 상온에서 수 micro-second 내에 결정화를 수행하는 것이 가능하며 도전층과 실리콘 박막 사이에 barrier층 삽입를 통하여 금속 오염을 막을 수 있으며 공정적인 측면에서도 별도의 chamber가 필요하지 않는 장점을 가지고 있다. 본 논문에서는 JIC 결정화 공정 조건에 따른 결정화 기구 및 JIC poly-Si의 미세구조 및 물리적 특성에 관한 논의가 이루어질 것이다.

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수용성 블록공중합물에서 산화티탄 분말의 흡착 안정화 (Adsorption Stabilization of $TiC_{2}$ Particles in Water Soluble Block Copolymers)

  • 권순일;정환경;최성옥;남기대
    • 한국응용과학기술학회지
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    • 제18권2호
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    • pp.118-126
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    • 2001
  • Micelle formation and adsorption at the $Ti0_{2}$ interface of a series of polystyrene-polythylene oxide(PS-PEO) block copolymer in aqueous solution was studied using fluorescence probing and small-angle X-ray methods. Further, the stability of aqueous $Ti0_{2}$ dispersion in the presence of copolymer was investigated by microelectrophoresis, optical density and sedimentation measurements. The dissolution of pyrene as fluorescent probe in aqueous surfactant solution leads to a slow decrease of the $I_{1}/I_{3}$ ratio, as the copolymer concentration increase; $I_{1}$ and $I_{3}$ are respectively the intensities of the first and third vibrionic peaks in the pyrene fluorescence emission. The behaviour was due to the characteristics of the copolymers and/or to the copolymer association efficiency in water. Moreover, the adsorption at the plateau level increases with decreasing PEO until chain length. The zeta potential of $TiO_{2}$ particles decreases with increasing copolymer concentration and reaches a plateau value. Finally, stabilization using block copolymers was more effective with samples having higher weight fractions of PS block.

술폰화된 호박산 알킬에스테르류의 계면성 (Surface-Active Properties of Sodium bis-Alkyl Sulfonatosuccinate)

  • 김명수;정환경;윤인영;남기대
    • 한국응용과학기술학회지
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    • 제18권2호
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    • pp.95-102
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    • 2001
  • Recently, there has been considerably interested in the development to new functional gemini type anionic surfactant, sodium bis-n-alkyl sulfonatosuccinate, had been synthesized through the addition reaction of sodium bisulfite to bis-n-alkyl maleate, in which water was azeotropically distilled by adding benzene to the reaction system, gave a good yield. All the surface activities including krafft point, surface tension, emulsion power and foaming were measure and cmc was evaluated in dilute solution. This results showed a lower ability in $27{\sim}30dyne/cm$ than single-chain surfactant with $32{\sim}35dyne/cm$ to surface tension. Also its cmc value much smaller in $(6.5{\sim}10){\times}10^{-4}mca{\ell}/{\ell}$ than single-chain surfactant with $(40{\sim}45){\times}10^{-4}mca{\ell}/{\ell}$ concentration. In foaming ability and foam stability of gemini surfactant had especially a good ability in approximately $100{\sim}150ml$, and in emulsing power they exhibited a good emulsing phase and stability, and Krafft points were $0{\sim}10^{\circ}C$.

천연 밀단백질/계면활성제 복합체의 세정에 있어 피부보호 (The Cutaneous Protection for Detergent Formulation of Nature Wheat Protein Surfactant Complexes)

  • 정환경;박흥조;김명수;남기대
    • 한국응용과학기술학회지
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    • 제19권2호
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    • pp.79-85
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    • 2002
  • The cutaneous tolerability of detergent formulations can be improved by means of suitable additives. They complex the surfactant molecules lowering the concentration of their free monomeric species. Proteins derivatives used as additives for detergency are usually prepared by partial hydrolysis of plant reserve proteins. The main purpose of the hydrolytic cleavage is to make them water soluble and suitable for liquid products. Water solubility and stability are obtained by means of complexation with surfactants which also increase their actual hydrophobicity, an important parameter affecting cosmetic properties of proteins. Transepidermal water loss (TEWL) and electric capacitance (EC) have been adopted as investigation technigues to evaluate the skin integrity/damage in vitro tests, The performance of native wheat protein / surfactant complexes has been compared with traditional protein hydrolysates as detergent additives. The results show a noticeable reduction of skin irritation in surfactant formulations with addition of native wheat protein.

Molybdenum 게이트를 적용한 저온 SLS 다결정 TFT′s 소자 제작과 특성분석에 관한 연구 (A Study on Low Temperature Sequential Lateral Solidification(SLS) Poly-Si Thin Film Transistors(TFT′s) with Molybdenum Gate)

  • 고영운;박정호;김동환;박원규
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권6호
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    • pp.235-240
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    • 2003
  • In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

Buried Channel 4단자 Poly-Si TFTs 제작 (The Fabrication of Four-Terminal Poly-Si TFTs with Buried Channel)

  • 정상훈;박철민;유준석;최형배;한민구
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권12호
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    • pp.761-767
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    • 1999
  • Poly-Si TFTs(polycrystalline silicon thin film transistors) fabricated on a low cost glass substrate have attracted a considerable amount of attention for pixel elements and peripheral driving circuits in AMLCS(active matrix liquid crystal display). In order to apply poly-Si TFTs for high resolution AMLCD, a high operating frequency and reliable circuit performances are desired. A new poly-Si TFT with CLBT(counter doped lateral body terminal) is proposed and fabricated to suppress kink effects and to improve the device stability. And this proposed device with BC(buried channel) is fabricated to increase ON-current and operating frequency. Although the troublesome LDD structure is not used in the proposed device, a low OFF-current is successfully obtained by removing the minority carrier through the CLBT. We have measured the dynamic properties of the poly-Si TFT device and its circuit. The reliability of the TFTs and their circuits after AC stress are also discussed in our paper. Our experimental results show that the BC enables the device to have high mobility and switching frequency (33MHz at $V_{DD}$ = 15 V). The minority carrier elimination of the CLBT suppresses kink effects and makes for superb dynamic reliability of the CMOS circuit. We have analyzed the mechanism in order to see why the ring oscillators do not operate by analyzing AC stressed device characteristics.

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Optical Simulation Study on the Effect of Reflecting Properties of Reflection Films on the Performances of Collimating Films for the LCD Backlight Applications

  • Lee, Jeong-Ho;Ju, Young-Hyun;Park, Ji-Hee;Lee, Ji-Young;Nahm, Kie-Bong;Ko, Jae-Hyeon;Kim, Joong-Hyun
    • Journal of Information Display
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    • 제9권1호
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    • pp.26-32
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    • 2008
  • The dependence of optical performances of collimating films such as prism films and pyramid films on the reflecting properties of reflection films were investigated by using a ray tracing technique. The angular distribution of the luminance and the on-axis luminance gain were obtained by using a simple backlight model composed of a reflection film, a virtual flat light source, and a collimating film. Three kinds of reflecting properties were used, which were a perfect Lambertian reflector, a perfect mirror reflector, and a reflector having both diffuse and specular properties. It was found that the on-axis luminance gain was the highest in the simulation where a mirror reflector was used, while the viewing angle was the widest where the Lambertian reflector was used. This result indicates that it is necessary to optimize the simulation condition such as the reflecting properties in order to predict the optical performances of collimating films accurately. Quantitative correlation between the optical characteristics of collimating films and the reflecting properties of reflection films can be used to improve simulation technique for the development and the optimization of collimating films for LCD backlight applications.

분위기 가스에 따른 ITO 박막의 전기적 및 구조적 특성 (Electrical and Structural characteristics of ITO thin films deposited under different ambient gases)

  • 허주희;한대섭;이유림;이규만;김인우
    • 반도체디스플레이기술학회지
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    • 제7권4호
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    • pp.7-11
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    • 2008
  • ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.

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