• Title/Summary/Keyword: AMLCD

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Reverse annealing of boron doped polycrystalline silicon

  • Lim, Jung-Yoon;Hong, Won-Eui;Kim, Deok-Hoi;Uemoto, Tstomu;Kim, Chi-Woo;Ro, Jae-Sang
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.264-267
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    • 2008
  • Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

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Quantum Chemical Studies for the Structure-Property Relationships of the Fluoro-isothiocyanated Nematic Liquid Crystal Materials

  • Joo, Young-Dae;No, K.T.;Seong, See-Yearl;Kim, Y.B.;Ban, Byeong-Seob;Lee, K.J.;Souk, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.486-488
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    • 2003
  • Some important properties of the liquid crystal molecules containing fluoro-isothiocyanated molecules have been studied using quantum chemical calculations and the results were correlated with respect to the structure of the molecules. Dielectric anisotropy, birefringence have been predicted for several unknown structures. The Maier-Meier, Vuks equation were used for the dielectric anisotropy and birefringence calculation. The results obtained by empirical approximation showed a good agreement with experiment ones.

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Numerical Analysis of One Drop Filling Process with Photo-definable Spacer

  • Lee, Woo-Shik;Yoo, Gi-Chun;Jeon, Baek-Kyun;Kim, Choong-Sik;Kim, Ki-Taek
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.500-503
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    • 2002
  • In this paper, we demonstrate the deformation of TFT-LCD panel using numerical analysis based on the finite element method. To make better uniform cell gap and less stress at a photo-definable spacer (spacer), we have investigated process and design factors such as amount of liquid crystal (LC), spacer density, area, height, and material property. Furthermore we optimized design factors and achieved the robust design through the simulation.

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Characteristics of Ag Etching using Inductively Coupled Halogen-based Plasmas

  • Park, Sang-Duk;Lee, Young-Joon;Kim, Sang-Gab;Choe, Hee-Hwan;Hong, Moon-Poe;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.860-863
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    • 2002
  • In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.

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Novel LUT Measurement Method for Response Time Compensation

  • Kim, Tae-Sung;Park, Bong-Im
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.331-334
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    • 2004
  • A new measurement scheme is proposed to generate an optimized boost table for video rate LCD response time compensation. This method, which closely follows basic theory, enables up to a 90% reduction in the lookup table creation time compared to conventional methods. Furthermore, while conventional approaches require all measurements to be repeated in order to load the entire LUT whenever key parameters such as refresh rate or boost intensity are modified, the method proposed in this paper allows the new table to be calculated by utilizing saved waveform data without the need for any repeated measurements.

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Next Generation AMLCD Production Technologies for Large Substrate

  • Ohta, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2001.08a
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    • pp.3-8
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    • 2001
  • This paper will review the state of the latest development of AMLCD manufacturing facilities for large Substrate and discuss the future technologies. The trend of the display size enlargement of Note book PC has hauled the enlargement of the mother glass substrate in past 10 years. The enlargement of a substrate size has brought about the productivity improvement of the TFT panel with process innovation as yet. Will this trend be continuing hereafter too? The issues of the processing and facilities related with the large square substrate and mask step reduction will be overviewed and the future processing and facilities will be discussed.

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A 2.4-in QVGA p-Si LTPS AMLCD for Mobile Application

  • Chen, Yu-Cheng;Lin, Tai-Ming;Hsu, Tien-Chu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1029-1032
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    • 2005
  • A 262K-color QVGA LTPS AMLCD was developed. This panel has integrated gate driver and data multiplexer (1:3) by p_Si LTPS TFT process. The commercialized driver IC was adopted to implement this display. Fine image quality, low powerconsumption and cost-efficiency feature make the panel be suitable for mobile application.

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'Warm-up' of a ${\pi}-cell$ Liquid Crystal Device

  • Lee, Gi-Dong;Bos, Philip J.;Ahn, Seon-Hong;Lee, Kun-Jong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1096-1100
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    • 2003
  • A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

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PVA Technology for High Performance LCD Monitors

  • Kim, Kyeong-Hyeon;Souk, Jun-Hyung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.1-4
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    • 2000
  • We have developed a high performance vertical alignment TFT-LCD, that shows a high light transmittance, and wide viewing angle characteristics with an unusually high contrast ratio. In order to optimize the electro-optical properties we have studied the effect of cell parameters, multi-domain structure and retardation film compensation. With the optimized cell parameters and process conditions, we have achieved a 24" wide UXGA TFT-LCD monitor (16:10 aspect ratio 1920X1200) showing a contrast ratio over 500:1, panel transmittance near 4.5%, response time near 27 ms, and viewing angle higher than 80 degree in all directions.

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Transparent Sol-Gel Hybrid Dielectric Material Coatings for Low k Passivation Layer

  • Yang, Seung-Cheol;Oh, Ji-Hoon;Kwak, Seung-Yeon;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1453-1456
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    • 2009
  • Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

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