• Title/Summary/Keyword: AMLCD

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A Novel Air-Bridge Type Gate-Data Line Inter-Crossing to Reduce Signal Delay for Large Size AMLCD (대면적 AMLCD의 신호 지연 감소를 위해 Air-gap을 갖는 게이트-데이터 라인 교차 구조)

  • Park, Jin-Woo;Kang, Ji-Hoon;Lee, Min-Cheol;Han, Min-Koo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.12
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    • pp.768-772
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    • 1999
  • A new TFT-LCD panel with air-bridge type gate to data line inter-crossing has been proposed and its characteristics have been measured. The proposed structure has air-gap between gate and data line inter-crossing. This air-bridge TFT-LCD panel has very small capacitance between gate and data line. The new panes structure achieves 9 times fast signal propagation compared with conventional panel, which enables to have enough design margin for 20-inch diagonal and larger size UXGA panel. We have examined thermal and mechanical durability of new panel to verify applicability for commercial AMLCD production. After TEOS and polyimide passivation, this panel withstood a thermal stress at $250^{\circ}C$ and a mechanical stress during the rubbing process.

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14.1" XGA AMLCD with Integrated Black Data Insertion as an application of a-Si TFT Gate Driver

  • Choi, Woo-Seok;Kim, Hae-Yeol;Cho, Hyung-Nyuck;Ryu, Chang-Il;Yoon, Soo-Young;Jang, Yong-Ho;Park, Kwon-Shik;Kim, Binn;Choi, Seung-Chan;Cho, Nam-Wook;Moon, Tae-Woong;Kim, Chang-Dong;Kang, In-Byeong
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.583-586
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    • 2009
  • A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

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Development of a New Hybrid Silicon Thin-Film Transistor Fabrication Process

  • Cho, Sung-Haeng;Choi, Yong-Mo;Kim, Hyung-Jun;Jeong, Yu-Gwang;Jeong, Chang-Oh;Kim, Shi-Yul
    • Journal of Information Display
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    • v.10 no.1
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    • pp.33-36
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    • 2009
  • A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

Engineered Tunnel Barrier Ploy-TFT Memory for System on Panel

  • Yu, Hui-Uk;Lee, Yeong-Hui;Jeong, Hong-Bae;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.128-128
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    • 2011
  • Polysilicon thin-film transistors (poly-Si TFTs)는 능동행렬 액정 표시 소자(AMLCD : Active Matrix Liquid Crystal Display)와 DRAM과 같은 메모리 분야에 폭넓게 적용이 가능하기 때문에 많은 연구가 진행되고 있다. 최근 poly-Si TFTs의 우수한 특성으로 인하여 주변 driving circuits에 직접화가 가능하게 되었다. 또한 디스플레이 LCD 패널에 controller와 메모리와 같은 다 기능의 장치을 직접화 하여 비용의 절감과 소자의 소형화가 가능한 SOP (System on panels)에 연구 또한 진행 되고 있다. 이미 잘 알려진 바와 같이 비휘발성 메모리는 낮은 소비전력과 비휘발성이라는 특성 때문에 이동식 디바이스에 데이터 저장 장치로 많이 사용되고 있다. 하지만 플로팅 타입의 비휘발성 메모리는 제작공정의 문제로 인하여 SOP의 적용에 어려움을 가지고 있다. SONOS 타입의 메모리는 빠른 쓰기/지우기 효율과 긴 데이터 유지 특성을 가지고 있으나 소자의 스케일링 따른 누설전류의 증가와 10년의 데이터 보존 특성을 만족 시킬 수 가 없는 문제가 발생한다. 본 연구에서는 SOP 적용을 위하여 ELA 방법을 통하여 결정화한 poly-Si TFT memory를 SiO2/Si3N4/SiO2 Tunnel barrier와 High-k HfO2과 Al2O3을 Trapping layer와 Blocking layer로 적용, 비휘발성 메모리을 제작하여 전기적 특성을 알아보았다.

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2.22-inch qVGA a-Si TFT-LCD Using a 2.5 um Fine-Patterning Technology by Wet Etch Process

  • Lee, Jae-Bok;Park, Sun;Heo, Seong-Kweon;You, Chun-Ki;Min, Hoon-Kee;Kim, Chi-Woo
    • Journal of Information Display
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    • v.7 no.3
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    • pp.1-4
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    • 2006
  • 2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

Oxide Semiconductor TFTs for the Next Generation LCD-TV Applications

  • Lee, Je-Hun;Kim, Do-Hyun;Yang, Dong-Ju;Hong, Sun-Young;Yoon, Kap-Soo;Hong, Pil-Soon;Jeong, Chang-Oh;Lee, Woo-Geun;Song, Jin-Ho;Kim, Shi-Yul;Kim, Sang-Soo;Son, Kyoung-Seok;Kim, Tae-Sang;Kwon, Jang-Yeon;Lee, Sang-Yoon
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1203-1207
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    • 2008
  • For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage ($V_{th}$) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

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Technology Issues on Oxide and Organic TFTs for AMOLED Display

  • Jang, Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.75-75
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    • 2012
  • 박막 트랜지스터(TFT: Thin-Film-Transistor)는 미래 산업에 여러 가지로 사용 가능한 소자이기 때문에, 많은 연구가 진행되고 있고 그 성능이 계속 향상되고 있다. 특히, 평판 디스플레이인 AMLCD, AMOLED, 전자 종이 등이 모두 유리 혹은 플라스틱 기판에 향성된 TFT 어레이를 이용하고 있다. 현재 상업화에 응용되는 TFT는 비정질 실리콘과 저온 다결정 실리콘이며, 유기반도체 및 산화물 반도체 TFTs에 대한 연구가 매우 활발히 진행되고 있다. 본 발표에서는 산화물 반도체 TFT와 유기 반도체 TFT 기술 및 AMOLED에의 응용 기술 이슈에 대해 논의할 예정이다.

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Excimer-Laser Crystallization for Low-Temperature Polycrystalline Si TFTs

  • Kim, Hyun-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.151-152
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    • 2000
  • For excimer laser crystallization (ELC), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing the final microstructure and the performance of low-temperature polycrystalline Si TFTs. The process and equipment have been achieved a significant improvement, but still, environmental factors associated with initial amorphous Si (a-Si) films and process conditions need to be optimized.

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Scaleable, Cost Effective Display Manufacturing Technology Based on White OLED

  • Buntaine, James R.;Rajeswaran, G.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.327-331
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    • 2007
  • The AMOLED industry must compete with AMLCD displays by standardizing around scaleable technology platforms that deliver display-performance and manufacturing-cost goals. Kodak White OLED device rchitectures have the potential to achieve the best performance and cost tradeoffs. Here we describe the building blocks necessary for delivering effective AMOLED mass production technologies.

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Recent advances in excimer-laser-based crystallization for active-matrix displays

  • Turk, Brandon A.;Herbst, Ludolf;Simon, Frank;Paetzel, Rainer
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.12-15
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    • 2007
  • Excimer-laser-based crystallization is ideallysuited for forming crystalline Si films on glass substrates for use in active-matrix displays. In this paper, we will report on recent and significant technical advances in light sources and beam delivery systems targeted at enabling ultra-uniform mura-free low-temperature polycrystalline silicon active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

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