• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권12호
• /
• pp.768-772
• /
• 1999

A new TFT-LCD panel with air-bridge type gate to data line inter-crossing has been proposed and its characteristics have been measured. The proposed structure has air-gap between gate and data line inter-crossing. This air-bridge TFT-LCD panel has very small capacitance between gate and data line. The new panes structure achieves 9 times fast signal propagation compared with conventional panel, which enables to have enough design margin for 20-inch diagonal and larger size UXGA panel. We have examined thermal and mechanical durability of new panel to verify applicability for commercial AMLCD production. After TEOS and polyimide passivation, this panel withstood a thermal stress at $250^{\circ}C$ and a mechanical stress during the rubbing process.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.583-586
• /
• 2009

A 14.1" XGA (1024${\times}$768) LCD panel with Integrated Black Data Insertion (IBDI) has been world first developed successfully based on the integrated amorphous Silicon TFT gate driver which we previously introduced. The notable features compared with the conventional integrated a-Si TFT gate driver circuit are that the circuit consists of Dual buffer, Carry buffer structure, and Q-node cross charging for stable signal scanning characteristic and prevention of coupling between signal lines.

• Journal of Information Display
• /
• 제10권1호
• /
• pp.33-36
• /
• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.1203-1207
• /
• 2008

For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage ($V_{th}$) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.128-128
• /
• 2011

Polysilicon thin-film transistors (poly-Si TFTs)는 능동행렬 액정 표시 소자(AMLCD : Active Matrix Liquid Crystal Display)와 DRAM과 같은 메모리 분야에 폭넓게 적용이 가능하기 때문에 많은 연구가 진행되고 있다. 최근 poly-Si TFTs의 우수한 특성으로 인하여 주변 driving circuits에 직접화가 가능하게 되었다. 또한 디스플레이 LCD 패널에 controller와 메모리와 같은 다 기능의 장치을 직접화 하여 비용의 절감과 소자의 소형화가 가능한 SOP (System on panels)에 연구 또한 진행 되고 있다. 이미 잘 알려진 바와 같이 비휘발성 메모리는 낮은 소비전력과 비휘발성이라는 특성 때문에 이동식 디바이스에 데이터 저장 장치로 많이 사용되고 있다. 하지만 플로팅 타입의 비휘발성 메모리는 제작공정의 문제로 인하여 SOP의 적용에 어려움을 가지고 있다. SONOS 타입의 메모리는 빠른 쓰기/지우기 효율과 긴 데이터 유지 특성을 가지고 있으나 소자의 스케일링 따른 누설전류의 증가와 10년의 데이터 보존 특성을 만족 시킬 수 가 없는 문제가 발생한다. 본 연구에서는 SOP 적용을 위하여 ELA 방법을 통하여 결정화한 poly-Si TFT memory를 SiO2/Si3N4/SiO2 Tunnel barrier와 High-k HfO2과 Al2O3을 Trapping layer와 Blocking layer로 적용, 비휘발성 메모리을 제작하여 전기적 특성을 알아보았다.

• Journal of Information Display
• /
• 제7권3호
• /
• pp.1-4
• /
• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1223_1224
• /
• 2009

광센서가 내장된 새로운 수소화된 비정질 실리콘(a-Si:H) 터치 디스플레이를 제시하였다. 16 인치 AMLCD의 모델을 구현하여 터치 패널을 성공적으로 작동시켰다. 본 시스템은 입력된 이미지로부터 실시간으로 정보를 추출해야 하는 복잡한 기존의 방식을 사용하지 않으면서 터치 포인트의 위치를 제공한다. 이 시스템의 간단한 구조를 통하여 대면적 터치 패널 디스플레이를 구현할 수 있다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.507-510
• /
• 1998

Performance of AMLCD pixels depends on the electrical characteristics of thin film transistor switches. The high quality of LCD can be obtained by minimizing the process and device variations of TFT. The effect of process and device factors on poly-Si TFT characteristics are calculated by ATHENA and ATLAS, and the optimized design windows based on statistical design of experiment are suggested for high performance 20 inch LCD are suggested for high performance 20 inch LCD monitors.

• Journal of Information Display
• /
• 제4권4호
• /
• pp.1-3
• /
• 2003

For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final microstructure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.13-16
• /
• 2008

Mobile phones are evolving into a platform for internet access. In order to display web pages in handsets, WVGA and around 3-inch displays are strongly recommended. Low power consumption, compactness and narrow boarder area are essential. The general requirements for WVGA solution and the design factors to reduce the power consumption and boarder area discussed.