• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.129-129
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• 2003

최근에 능동 영역 액정 표시 소자(Active Matrix Liquid Crystal Display, AMLCD)에서 고해상도와 빠른 응답속도를 요구하게 되면서부터 다결정 실리콘(poly-Si) 박막 트랜지스터(Thin Film Transistor, TFT)가 쓰이게 되었다. 그리고 일반적으로 디스플레이의 기판을 상대적으로 저가의 유리를 사용하기 때문에 저온 공정이 필수적이다. 따라서 새로운 저온 결정화 방법과 부가적으로 최근 디스플레이 개발 동향 중 하나인 대화면에 적용 가능한 공정인 금속유도 결정화 (Silicide Mediated Crystallization, SMC)가 연구되고 있다. 이 소자는 top-gated coplanar구조로 설계되었다. (그림 1)(100) 실리콘 웨이퍼위에 3000$\AA$의 열산화막을 올리고, LPCVD로 55$0^{\circ}C$에서 비정질 실리콘(a-Si:H) 박막을 550$\AA$ 증착 시켰다. 그리고 시편은 SMC 방법으로 결정화 시켜 TEM(Transmission Electron Microscopy)으로 SMC 다결정 실리콘을 분석하였다. 그 위에 TFT의 게이트 산화막을 열산화막 만큼 우수한 TEOS(Tetraethoxysilane)소스로 사용하여 실리콘 산화막을 1000$\AA$ 형성하였고 게이트는 3000$\AA$ 두께로 몰리브덴을 스퍼터링을 통하여 형성하였다. 이 다결정 실리콘은 3$\times$10^15 cm^-2의 보론(B)을 도핑시켰다. 채널, 소스, 드래인을 정의하기 위해 플라즈마 식각이 이루어 졌으며, 실리콘 산화막과 실리콘 질화막으로 passivation하고, 알루미늄으로 전극을 형성하였다 그리고 마지막에 TFT의 출력특성과 전이특성을 측정함으로써 threshold voltage, the subthreshold slope 와 the field effect mobility를 계산하였다.

• 한국응용과학기술학회지
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• 제17권2호
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• pp.105-112
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• 2000

Surface tension as a function of concentration and temperature was measured for aquous solution of sodium N-acyl sarcosinate, $RCON(CH_{3})CH_{2}$ COONa, From the intersection points in the (${\gamma}-logC$) curves, the critical micelle concentration (cmc) was determined at 20, 30, 40, and $50^{\circ}C$. Structural effects on the cmc maximum and the minimum area per molecule at the aquous solution/air interface were discussed. The free energy, enthalpy, and entropy of micellization and adsorption of surfactant solution also were investigated. Numberous investigators have dealt with sodium N-acyl sarcosinates and their applications as wettings, flooding and reducing agents and as corrosion inhibitors.

• 한국응용과학기술학회지
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• 제17권3호
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• pp.149-157
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• 2000

The synthesis of N-methyl glucamine was performed in two step reaction. The first step involves the amination between methylamine and glucose in methane. The N-methyl glucamine was obtained by the reduction of using Ni catalyst under the high pressure. The second step was glucamide anionic derivatives synthesis from N-methyl glucamine, maleic anhydride, lauryl alcohol and laurylamine by Schotten Banmann reaction respectively. Their molecular structures of N-methyl glucamine and glucamide (EG-MAS and AC-MAS) were investigated by IR and $^{1}H-NMR$. Basic physical properties and biodegradability of there glucamide anionic surfactant was investigated. The range of cmc values determined by measurements of surface tention was $10^{-5}{\sim}10^{-4}mol/l$ and the surface tension of the aqueous solution revealed in the range $28{\sim}30$ dyne/cm and their biodegradability was very good in the pH $5{\sim}10$.

• Journal of the Optical Society of Korea
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• 제12권1호
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• pp.25-30
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• 2008

The optical performances of 15-inch edge-lit backlight were simulated by using a Monte Carlo ray-tracing technique. The backlight model was built by combining a wedge-type light guide plate, a diffuser sheet, a tubular fluorescent lamp with a lamp reflector, and two crossed prism sheets. Angular distributions of the luminance on each optical component obtained from simulation were consistent with those obtained from experiments on a real 15-inch backlight. The constructed backlight model was used to evaluate the optical performances of a micro-pyramid film. It was found that the on-axis luminance gain on the pyramid film is higher than that on one prism film but much lower than that on the two crossed prism films. These results suggest that a reliable simulation model can be used to develop new hybrid films and to optimize the optical structure of edge-lit backlight in order to reduce the developmental period.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.553-556
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• 2008

We hereby report novel driving scheme to eliminate effect of "residual" image sticking (RRI) problem which arises due to hysteresis problem in Thin Film Transistor (TFT) in AMOLED Displays. The driving scheme applies "black" voltage after every data voltage period in order to drive AMOLED in uni-direction. The system can be easily implemented with 120 Hz driving scheme which is well matured in AMLCD industries. Our analyses show systematic evaluation of the problem and thereby solving it by simple methods which will be significantly effective of driving OLED towards mass manufacturing stage.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1649-1652
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.419-422
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• 2002

We have studied dielectric properties in the smectic phases of 4-(6-ethoxy-1-trifluoromethyl-hexyloxycarbonyl)-phenyl-4-Nonyloxybiphenyl-4-carboxylat ( TFMEOHPNBC ) having fluorine attached to one of its benzene rings. Homogeneous and homeotropic 1.5 and 5${\mu}m$ thick test cells were prepared to analyze molecular dynamic property. We measured capacitance as a function of temperature in the frequency range between 20 Hz and 100 kHz by using HP4284A LCR meter. We observed that the homogeneous cell has high dielectric constant causing dipole moment in smectic $C^{\ast}$ phase, but we can see the dipole moments are canceled out in antiferroelectric phase. It is found that there are two kind of the relaxation director fluctuation below 100 kHz. The first is ionic or space charge contribution below 10 Hz, and the second is Goldstone mode near 1-2 kHz. We will discuss molecular dynamics in smectic phase from extra information such as x-ray and electrooptic data.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.415-418
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• 2002

We have studied electro-optic properties and layer deformations in the smectic phases of 4-(6ethoxy-l-trifluoromethyl-hexyloxycarbonyl)-phenyl-4-Nonyloxybiphenyl-4-carboxylat ( TFMEOHPNBC ) having fluorine attached to one of its benzene rings by electro-optical and small angle x-ray scattering techniques. 3 and 5${\mu}m$ thick test cells were prepared using beryllium plates to minimize x-ray beam absorption. Layer structure and orientation was studied while changing the amplitude and frequency of the applied electric field as a function of cell temperature. We observed that the chevron layer tilt angle is reduced and layer spacing is increased as stabilizing in antiferroelectric phase. This result is extraordinary that there is dimerization in antiferroelectric phase. We also found that there is a threshold electric field that changes the chevron structure to bookshelf structure. This threshold electric field depends on the frequency and temperature as shown in Fig.1. We will discuss the dynamics of layer orientation as determined from the x-ray, electro-optic and dielectric spectroscopy.